☰

Maxime G. Lemaitre, Ph.D. - Publications

Affiliations: 
2013 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Condensed Matter Physics
Tree Info Similar researchers PubMed Report error

10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Petterson MK, Lemaitre MG, Shen Y, Wadhwa P, Hou J, Vasilyeva SV, Kravchenko II, Rinzler AG. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell. Acs Applied Materials & Interfaces. 7: 21182-7. PMID 26352052 DOI: 10.1021/Acsami.5B05010  0.343
2012 Lemaitre MG, Donoghue EP, McCarthy MA, Liu B, Tongay S, Gila B, Kumar P, Singh RK, Appleton BR, Rinzler AG. Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors. Acs Nano. 6: 9095-102. PMID 23002806 DOI: 10.1021/Nn303848K  0.443
2012 Appleton BR, Tongay S, Lemaitre M, Gila B, Hays D, Scheuermann A, Fridmann J. Multi-ion beam lithography and processing studies Materials Research Society Symposium Proceedings. 1354: 47-58. DOI: 10.1557/Opl.2011.1210  0.344
2012 Tongay S, Lemaitre M, Miao X, Gila B, Appleton BR, Hebard AF. Rectification at graphene-semiconductor interfaces: Zero-gap semiconductor-based diodes Physical Review X. 2: 1-10. DOI: 10.1103/Physrevx.2.011002  0.448
2012 Lemaitre MG, Tongay S, Wang X, Venkatachalam DK, Fridmann J, Gila BP, Hebard AF, Ren F, Elliman RG, Appleton BR. Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing Applied Physics Letters. 100. DOI: 10.1063/1.4707383  0.372
2012 Tongay S, Lemaitre M, Fridmann J, Hebard AF, Gila BP, Appleton BR. Drawing graphene nanoribbons on SiC by ion implantation Applied Physics Letters. 100. DOI: 10.1063/1.3682479  0.437
2012 Appleton BR, Tongay S, Lemaitre M, Gila B, Fridmann J, Mazarov P, Sanabia JE, Bauerdick S, Bruchhaus L, Mimura R, Jede R. Materials modifications using a multi-ion beam processing and lithography system Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 272: 153-157. DOI: 10.1016/J.Nimb.2011.01.054  0.358
2011 Tongay S, Berke K, Lemaitre M, Nasrollahi Z, Tanner DB, Hebard AF, Appleton BR. Stable hole doping of graphene for low electrical resistance and high optical transparency. Nanotechnology. 22: 425701. PMID 21934196 DOI: 10.1088/0957-4484/22/42/425701  0.43
2011 Tongay S, Lemaitre M, Schumann T, Berke K, Appleton BR, Gila B, Hebard AF. Graphene/GaN Schottky diodes: Stability at elevated temperatures Applied Physics Letters. 99. DOI: 10.1063/1.3628315  0.413
2006 Cao Q, Zhu ZT, Lemaitre MG, Xia MG, Shim M, Rogers JA. Transparent flexible organic thin-film transistors that use printed single-walled carbon nanotube electrodes Applied Physics Letters. 88. DOI: 10.1063/1.2181190  0.335
Show low-probability matches.