Karen L. Kavanagh
Affiliations: | 2000 | University of California, San Diego, La Jolla, CA | |
| 2000- | Simon Fraser University, Burnaby, British Columbia, Canada |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Electricity and Magnetism PhysicsWebsite:
http://www.sfu.ca/physics/people/profiles/kavanagh.htmlGoogle:
"Karen Lynne Kavanagh" OR "Karen L Kavanagh"Bio:
https://scholar.google.ca/citations?user=Zd1U2IoAAAAJ&hl=en
https://books.google.com/books?id=JmlUAAAAYAAJ
Mean distance: (not calculated yet)
Parents
Sign in to add mentor| James W. Mayer | grad student | 1987 | Cornell | |
| (Atomic diffusion at polycrystalline-silicon/gallium arsenide interfaces.) | ||||
Children
Sign in to add trainee| Rachel S. Goldman | grad student | 1995 | UCSD (E-Tree) |
| Ryan P. Lu | grad student | 2002 | UCSD |
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Publications
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| Narayan SR, Day JM, Thinakaran HL, et al. (2018) Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis Mrs Advances. 3: 3379-3390 |
| Majumder S, Jarvis K, Banerjee SK, et al. (2017) Interfacial reactions at Fe/topological insulator spin contacts. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : Jvst B. 35: 04F105 |
| Kavanagh KL, Herrmann C, Notte JA. (2017) Camera for transmission He+ ion microscopy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 06G902 |
| Alagha S, Zhao S, Mi Z, et al. (2017) Electrical characterization of Si/InN nanowire heterojunctions Semiconductor Science and Technology. 33: 015008 |
| Alagha S, Heedt S, Vakulov D, et al. (2017) Electrical properties of lightly Ga-doped ZnO nanowires Semiconductor Science and Technology. 32: 125010 |
| Alagha S, Shik A, Ruda HE, et al. (2017) Space-charge-limited current in nanowires Journal of Applied Physics. 121: 174301 |
| Darbandi A, McNeil J, Akhtari Zavareh A, et al. (2016) Direct Measurement of the Electrical Abruptness of a Nanowire p-n Junction. Nano Letters |
| Yang M, Darbandi A, Majumder S, et al. (2016) Epitaxial Fe on free-standing GaAs nanowires Semiconductor Science and Technology. 31 |
| Darbandi A, Kavanagh KL, Watkins SP. (2015) Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes Nano Letters. 15: 5408-5413 |
| Mi Z, Zhao S, Le BH, et al. (2014) Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires Proceedings of Spie - the International Society For Optical Engineering. 8996 |