| Year |
Citation |
Score |
| 2018 |
Narayan SR, Day JM, Thinakaran HL, Herbots N, Bertram ME, Cornejo CE, Diaz TC, Kavanagh KL, Culbertson RJ, Ark FJ, Ram S, Mangus MW, Islam R. Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis Mrs Advances. 3: 3379-3390. DOI: 10.1557/Adv.2018.473 |
0.344 |
|
| 2017 |
Majumder S, Jarvis K, Banerjee SK, Kavanagh KL. Interfacial reactions at Fe/topological insulator spin contacts. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : Jvst B. 35: 04F105. PMID 28713648 DOI: 10.1116/1.4991331 |
0.301 |
|
| 2017 |
Kavanagh KL, Herrmann C, Notte JA. Camera for transmission He+ ion microscopy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 06G902. DOI: 10.1116/1.4991898 |
0.303 |
|
| 2017 |
Alagha S, Zhao S, Mi Z, Watkins SP, Kavanagh KL. Electrical characterization of Si/InN nanowire heterojunctions Semiconductor Science and Technology. 33: 015008. DOI: 10.1088/1361-6641/Aa9B57 |
0.412 |
|
| 2017 |
Alagha S, Heedt S, Vakulov D, Mohammadbeigi F, Kumar ES, Schäpers T, Isheim D, Watkins SP, Kavanagh KL. Electrical properties of lightly Ga-doped ZnO nanowires Semiconductor Science and Technology. 32: 125010. DOI: 10.1088/1361-6641/Aa91Ef |
0.393 |
|
| 2017 |
Alagha S, Shik A, Ruda HE, Saveliev I, Kavanagh KL, Watkins SP. Space-charge-limited current in nanowires Journal of Applied Physics. 121: 174301. DOI: 10.1063/1.4982222 |
0.317 |
|
| 2016 |
Darbandi A, McNeil J, Akhtari Zavareh A, Watkins S, Kavanagh KL. Direct Measurement of the Electrical Abruptness of a Nanowire p-n Junction. Nano Letters. PMID 27254390 DOI: 10.1021/Acs.Nanolett.6B00289 |
0.373 |
|
| 2016 |
Yang M, Darbandi A, Majumder S, Watkins S, Kavanagh K. Epitaxial Fe on free-standing GaAs nanowires Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/7/074003 |
0.423 |
|
| 2015 |
Darbandi A, Kavanagh KL, Watkins SP. Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes Nano Letters. 15: 5408-5413. DOI: 10.1021/Acs.Nanolett.5B01795 |
0.423 |
|
| 2014 |
Mi Z, Zhao S, Le BH, Salehzadeh O, Alagha S, Kavanagh KL, Watkins SP. Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2038663 |
0.436 |
|
| 2014 |
Mooney PM, Kavanagh KL, Owen D, Lackner D, Cawston-Grant B, Basile AF, Salehzadeh O, Watkins SP. Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/7/075009 |
0.407 |
|
| 2014 |
Akhtari-Zavareh A, Carignan LP, Yelon A, Ménard D, Kasama T, Herring R, Dunin-Borkowski RE, McCartney MR, Kavanagh KL. Off-axis electron holography of ferromagnetic multilayer nanowires Journal of Applied Physics. 116. DOI: 10.1063/1.4887488 |
0.327 |
|
| 2013 |
Chuo Y, Landrock C, Omrane B, Hohertz D, Grayli SV, Kavanagh K, Kaminska B. Rapid fabrication of nano-structured quartz stamps. Nanotechnology. 24: 055304. PMID 23324651 DOI: 10.1088/0957-4484/24/5/055304 |
0.345 |
|
| 2013 |
Dayeh SA, Tang W, Boioli F, Kavanagh KL, Zheng H, Wang J, Mack NH, Swadener G, Huang JY, Miglio L, Tu KN, Picraux ST. Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires. Nano Letters. 13: 1869-76. PMID 23030346 DOI: 10.1021/Nl3022434 |
0.425 |
|
| 2013 |
Chuo Y, Hohertz D, Landrock C, Omrane B, Kavanagh KL, Kaminska B. Large-area low-cost flexible plastic nanohole arrays for integrated bio-chemical sensing Ieee Sensors Journal. 13: 3982-3990. DOI: 10.1109/Jsen.2013.2262997 |
0.303 |
|
| 2013 |
Majumder S, Kardasz B, Kirczenow G, Thorpe AS, Kavanagh KL. Lateral spin injection and detection through electrodeposited Fe/GaAs contacts Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/3/035003 |
0.308 |
|
| 2013 |
Salehzadeh O, Kavanagh KL, Watkins SP. Geometric limits of coherent III-V core/shell nanowires Journal of Applied Physics. 114. DOI: 10.1063/1.4816460 |
0.379 |
|
| 2013 |
Salehzadeh O, Kavanagh KL, Watkins SP. Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells Journal of Applied Physics. 113. DOI: 10.1063/1.4799065 |
0.4 |
|
| 2013 |
Zhao S, Salehzadeh O, Alagha S, Kavanagh KL, Watkins SP, Mi Z. Probing the electrical transport properties of intrinsic InN nanowires Applied Physics Letters. 102. DOI: 10.1063/1.4792699 |
0.385 |
|
| 2013 |
Akhtari-Zavareh A, Li W, Maroun F, Allongue P, Kavanagh KL. Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition Journal of Applied Physics. 113. DOI: 10.1063/1.4792000 |
0.462 |
|
| 2012 |
Liu C, Salehzadeh O, Poole PJ, Watkins SP, Kavanagh KL. Insights into semiconductor nanowire conductivity using electrodeposition Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105020 |
0.361 |
|
| 2012 |
Kavanagh KL, Saveliev I, Blumin M, Swadener G, Ruda HE. Faster radial strain relaxation in InAs-GaAs core-shell heterowires Journal of Applied Physics. 111. DOI: 10.1063/1.3684964 |
0.443 |
|
| 2012 |
Popoff RTW, Zavareh AA, Kavanagh KL, Yu HZ. Reduction of gold penetration through phenyl-terminated alkyl monolayers on silicon Journal of Physical Chemistry C. 116: 17040-17047. DOI: 10.1021/Jp304351B |
0.382 |
|
| 2011 |
Popoff RT, Kavanagh KL, Yu HZ. Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon. Nanoscale. 3: 1434-45. PMID 21290075 DOI: 10.1039/C0Nr00677G |
0.349 |
|
| 2011 |
Salehzadeh O, Chen MX, Kavanagh KL, Watkins SP. Rectifying characteristics of Te-doped GaAs nanowires Applied Physics Letters. 99. DOI: 10.1063/1.3658633 |
0.389 |
|
| 2011 |
Kavanagh KL, Salfi J, Savelyev I, Blumin M, Ruda HE. Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires Applied Physics Letters. 98. DOI: 10.1063/1.3579251 |
0.429 |
|
| 2011 |
Esmaili S, Bahrololoom ME, Kavanagh KL. Electrodeposition, characterization and morphological investigations of NiFe/Cu multilayers prepared by pulsed galvanostatic, dual bath technique Materials Characterization. 62: 204-210. DOI: 10.1016/J.Matchar.2010.11.017 |
0.313 |
|
| 2010 |
Huang H, Deng ZW, Li DC, Barbir E, Jiang WY, Chen MX, Kavanagh KL, Mooney PM, Watkins SP. Effect of annealing on the structural and optical properties of heavily carbon-doped ZnO Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045023 |
0.339 |
|
| 2010 |
Kavanagh KL. Misfit dislocations in nanowire heterostructures Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024006 |
0.395 |
|
| 2010 |
Gordon R, Brolo AG, Sinton D, Kavanagh KL. Resonant optical transmission through hole-arrays in metal films: Physics and applications Laser and Photonics Reviews. 4: 311-335. DOI: 10.1002/Lpor.200810079 |
0.343 |
|
| 2009 |
Bao ZL, Grist S, Majumder S, Xu LB, Jensen E, Kavanagh KL. Residual stress, defects, and electrical properties of epitaxial copper growth on GaAs Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3073876 |
0.405 |
|
| 2009 |
Majumder S, Arrott AS, Kavanagh KL. Inhomogeneous magnetization processes in electrodeposited iron thin films on GaAs Journal of Applied Physics. 105. DOI: 10.1063/1.3086296 |
0.333 |
|
| 2009 |
Dayeh SA, Susac D, Kavanagh KL, Yu ET, Wang D. Structural and room-temperature transport properties of zinc blende and wurtzite inas nanowires Advanced Functional Materials. 19: 2102-2108. DOI: 10.1002/Adfm.200801307 |
0.432 |
|
| 2008 |
Philipose U, Saxena A, Ruda HE, Simpson PJ, Wang YQ, Kavanagh KL. Defect studies of ZnSe nanowires. Nanotechnology. 19: 215715. PMID 21730594 DOI: 10.1088/0957-4484/19/21/215715 |
0.342 |
|
| 2008 |
Bao XY, Soci C, Susac D, Bratvold J, Aplin DP, Wei W, Chen CY, Dayeh SA, Kavanagh KL, Wang D. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition. Nano Letters. 8: 3755-60. PMID 18954121 DOI: 10.1021/Nl802062Y |
0.395 |
|
| 2008 |
Dayeh SA, Susac D, Kavanagh KL, Yu ET, Wang D. Field dependent transport properties in InAs nanowire field effect transistors. Nano Letters. 8: 3114-9. PMID 18783282 DOI: 10.1021/Nl801256P |
0.345 |
|
| 2008 |
Gordon R, Sinton D, Kavanagh KL, Brolo AG. A new generation of sensors based on extraordinary optical transmission. Accounts of Chemical Research. 41: 1049-57. PMID 18605739 DOI: 10.1021/Ar800074D |
0.307 |
|
| 2008 |
Marthandam P, Brolo AG, Sinton D, Kavanagh KL, Moffitt MG, Gordon R. Nanoholes in metals with applications to sensors and spectroscopy International Journal of Nanotechnology. 5: 1058-1081. DOI: 10.1504/Ijnt.2008.019831 |
0.338 |
|
| 2008 |
Ahktari-Zavareh A, Li W, Kavanagh KL, Trionfi AJ, Jones JC, Reno JL, Hsu JWP, Talin AA. Au/Ag and Au/Pd molecular contacts to GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1597-1601. DOI: 10.1116/1.2919159 |
0.386 |
|
| 2008 |
Dayeh SA, Susac D, Chen P, Yi J, Kavanagh KL, Lau SS, Yu ET, Wang D. Optimal control over the InAs nanowire growth for system integration and their structural and transport properties 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 576-579. DOI: 10.1109/NANO.2008.170 |
0.326 |
|
| 2008 |
Kuikka MA, Li W, Kavanagh KL, Yu HZ. Nanoscale electrical and structural characterization of gold/alkyl monolayer/silicon diode junctions Journal of Physical Chemistry C. 112: 9081-9088. DOI: 10.1021/Jp802685J |
0.421 |
|
| 2007 |
Adachi MM, Taghibakhsh F, Kavanagh KL, Karim KS. Structural analysis of nanocrystalline silicon prepared by hot-wire chemical vapor deposition on polymer substrates Materials Research Society Symposium Proceedings. 989: 517-522. DOI: 10.1557/Proc-0989-A22-03 |
0.31 |
|
| 2007 |
Wang YQ, Philipose U, Xu T, Ruda HE, Kavanagh KL. Twinning modulation in ZnSe nanowires Semiconductor Science and Technology. 22: 175-178. DOI: 10.1088/0268-1242/22/3/001 |
0.421 |
|
| 2007 |
Li WJ, Kavanagh KL, Talin AA, Clift WM, Matzke CM, Hsu JWP. Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes Journal of Applied Physics. 102. DOI: 10.1063/1.2748865 |
0.408 |
|
| 2007 |
Philipose U, Sun P, Xu T, Ruda HE, Yang L, Kavanagh KL. Structure and photoluminescence of ZnSe nanostructures fabricated by vapor phase growth Journal of Applied Physics. 101. DOI: 10.1063/1.2424400 |
0.381 |
|
| 2007 |
Lesuffleur A, Kumar LKS, Brolo AG, Kavanagh KL, Gordon R. Apex-enhanced Raman spectroscopy using double-hole arrays in a gold film Journal of Physical Chemistry C. 111: 2347-2350. DOI: 10.1021/Jp067677E |
0.334 |
|
| 2006 |
Brolo AG, Kwok SC, Cooper MD, Moffitt MG, Wang CW, Gordon R, Riordon J, Kavanagh KL. Surface plasmon-quantum dot coupling from arrays of nanoholes. The Journal of Physical Chemistry. B. 110: 8307-13. PMID 16623513 DOI: 10.1021/Jp054129C |
0.303 |
|
| 2006 |
Bao ZL, Kavanagh KL. Epitaxial Bi/GaAs diodes via electrodeposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2138-2143. DOI: 10.1116/1.2218874 |
0.432 |
|
| 2006 |
Philipose U, Xu T, Yang S, Sun P, Ruda HE, Wang YQ, Kavanagh KL. Enhancement of band edge luminescence in ZnSe nanowires Journal of Applied Physics. 100. DOI: 10.1063/1.2362930 |
0.37 |
|
| 2006 |
Bao ZL, Kavanagh KL. Epitaxial Bi/GaAs(111) diodes via electrodeposition Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2161849 |
0.364 |
|
| 2006 |
Ruda HE, Polanyi JC, Yang J, Wu Z, Philipose U, Xu T, Yang S, Kavanagh KL, Liu JQ, Yang L, Wang Y, Robbie K, Kaminska K, Cooke DG, Hegmann FA, et al. Developing 1D nanostructure arrays for future nanophotonics Nanoscale Research Letters. 1: 99-119. DOI: 10.1007/S11671-006-9016-6 |
0.313 |
|
| 2006 |
Wang YQ, Philipose U, Ruda H, Kavanagh KL. Planar defects and phase transformation in ZnSe nanosaws Journal of Materials Science: Materials in Electronics. 17: 1065-1070. DOI: 10.1007/S10854-006-9006-6 |
0.373 |
|
| 2005 |
Li W, Kavanagh KL, Matzke CM, Talin AA, Léonard F, Faleev S, Hsu JW. Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes. The Journal of Physical Chemistry. B. 109: 6252-6. PMID 16851693 DOI: 10.1021/Jp0501648 |
0.398 |
|
| 2005 |
Brolo AG, Kwok SC, Moffitt MG, Gordon R, Riordon J, Kavanagh KL. Enhanced fluorescence from arrays of nanoholes in a gold film. Journal of the American Chemical Society. 127: 14936-41. PMID 16231950 DOI: 10.1021/Ja0548687 |
0.33 |
|
| 2005 |
Gordon R, Hughes M, Leathem B, Kavanagh KL, Brolo AG. Basis and lattice polarization mechanisms for light transmission through nanohole arrays in a metal film. Nano Letters. 5: 1243-6. PMID 16178218 DOI: 10.1021/Nl0509069 |
0.33 |
|
| 2005 |
Koveshnikov A, Woltersdorf G, Liu JQ, Kardasz B, Mosendz O, Heinrich B, Kavanagh KL, Bach P, Bader AS, Schumacher C, Rüster C, Gould C, Schmidt G, Molenkamp LW, Kumpf C. Structural and magnetic properties of NiMnSb/InGaAs/InP(001) Journal of Applied Physics. 97. DOI: 10.1063/1.1873036 |
0.388 |
|
| 2005 |
Young EC, Koveshnikov AN, Tixier S, Kavanagh KL, Tiedje T. Strain relaxation by (100) misfit dislocations in dilute nitride in xGa 1-xAs 1-yN y/GaAs quantum wells Physica Status Solidi (a) Applications and Materials Science. 202: 2849-2857. DOI: 10.1002/Pssa.200521092 |
0.335 |
|
| 2004 |
Brolo AG, Arctander E, Gordon R, Leathem B, Kavanagh KL. Nanohole-enhanced raman scattering Nano Letters. 4: 2015-2018. DOI: 10.1021/Nl048818W |
0.303 |
|
| 2003 |
Wu ZH, Mei X, Kim D, Blumin M, Ruda HE, Liu JQ, Kavanagh KL. Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires Applied Physics Letters. 83: 3368-3370. DOI: 10.1063/1.1618018 |
0.381 |
|
| 2002 |
Lu RP, Kavanagh KL, Dixon-Warren SJ, Spring Thorpe AJ, Streater R, Calder I. Scanning spreading resistance microscopy current transport studies on doped III-V semiconductors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1682-1686. DOI: 10.1116/1.1496512 |
0.693 |
|
| 2002 |
Chahboun A, Fink V, Fleischauer M, Kavanagh KL, Lu RP, Hansen L, Becker CR, Molenkamp LW. Ballistic electron emission microscopy studies of ZnSe-BeTe heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1781-1789. DOI: 10.1116/1.1491990 |
0.709 |
|
| 2002 |
Adamcyk M, Schmid JH, Tiedje T, Koveshnikov A, Chahboun A, Fink V, Kavanagh KL. Comparison of strain relaxation in InGaAsN and InGaAs thin films Applied Physics Letters. 80: 4357-4359. DOI: 10.1063/1.1485124 |
0.3 |
|
| 2001 |
Lu RP, Kavanagh KL, Dixon-Warren SJ, Kuhl A, SpringThorpe AJ, Griswold E, Hillier G, Calder I, Arés R, Streater R. Calibrated scanning spreading resistance microscopy profiling of carriers in III-V structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1662-1670. DOI: 10.1116/1.1387458 |
0.71 |
|
| 2000 |
Lu RP, Morgan BA, Kavanagh KL, Powell CJ, Chen PJ, Serpa FG, Egelhoff WF. Interfacial scattering of hot electrons in ultrathin Au/Co films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2047-2051. DOI: 10.1116/1.1306334 |
0.736 |
|
| 2000 |
Lu RP, Morgan BA, Kavanagh KL, Powell CJ, Chen PJ, Serpa FG, Egelhoff WF. Hot-electron attenuation lengths in ultrathin magnetic films Journal of Applied Physics. 87: 5164-5166. DOI: 10.1063/1.373417 |
0.708 |
|
| 1999 |
Shapiro AL, Rooney PW, Tran MQ, Hellman F, Ring KM, Kavanagh KL, Rellinghaus B, Weller D. Growth-induced magnetic anisotropy and clustering in vapor-deposited Co-Pt alloy films Physical Review B - Condensed Matter and Materials Physics. 60: 12826-12836. DOI: 10.1103/Physrevb.60.12826 |
0.326 |
|
| 1999 |
Shapiro AL, Vajk O, Hellman F, Ring KM, Kavanagh KL. Suppression of growth-induced perpendicular magnetic anisotropy in Co-Pt alloys by trace amounts of Si Applied Physics Letters. 75: 4177-4179. DOI: 10.1063/1.125574 |
0.364 |
|
| 1998 |
Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN, Feenstra RM. Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers Journal of Applied Physics. 83: 5137-5149. |
0.676 |
|
| 1997 |
Kavanagh KL, Goldman RS, Lavoie C, Leduc B, Pinnington T, Tiedje T, Klug D, Tse J. In situ detection of misfit dislocations by light scattering Journal of Crystal Growth. 174: 550-557. |
0.53 |
|
| 1996 |
Goldman RS, Kavanagh KL, Wieder HH, Bobbins VM, Ehrlich SN, Feenstra RM. Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases Journal of Applied Physics. 80: 6849-6854. DOI: 10.1063/1.363751 |
0.73 |
|
| 1995 |
Ring KM, Shapiro AL, Deng F, Goldman RS, Spada F, Hellman F, Cheeks TL, Kavanagh KL, Suzuki T. Structural and magnetic characterization of Bi-substituted garnet on Si and GaAs Materials Research Society Symposium - Proceedings. 384: 41-46. DOI: 10.1557/Proc-384-41 |
0.59 |
|
| 1995 |
Ring KM, Shapiro A, Deng F, Goldman R, Spada F, Hellman F, Cheeks T, Kavanagh K, Suzuki T. Structural and Magnetic Characterization of Bi-Substituted Garnet on Si and GaAs Mrs Proceedings. 384. DOI: 10.1557/PROC-384-41 |
0.302 |
|
| 1995 |
Rich DH, Rammohan K, Tang Y, Lin HT, Goldman RS, Wieder HH, Kavanagh KL. Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1766-1772. DOI: 10.1116/1.587810 |
0.667 |
|
| 1995 |
Goldman RS, Wieder HH, Kavanagh KL. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces Applied Physics Letters. 67: 344-346. DOI: 10.1063/1.115439 |
0.582 |
|
| 1994 |
Goldman RS, Wieder HH, Kavanagh KL, Rammohan K, Rich DH. Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates Applied Physics Letters. 65: 1424-1426. DOI: 10.1063/1.112071 |
0.713 |
|
| 1994 |
Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder HH. Optical detection of misfit dislocation-induced deep levels at InGaAs/GaAs heterojunctions Applied Physics Letters. 64: 3572-3574. DOI: 10.1063/1.111201 |
0.673 |
|
| 1993 |
Chin TP, Chang JCP, Kavanagh KL, Tu CW, Kirchner PD, Woodall JM. Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100) Applied Physics Letters. 62: 2369-2371. DOI: 10.1063/1.109367 |
0.433 |
|
| 1993 |
Talin AA, Ohlberg DAA, Williams RS, Sullivan P, Koutselas I, Williams B, Kavanagh KL. Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier Applied Physics Letters. 62: 2965-2967. DOI: 10.1063/1.109158 |
0.391 |
|
| 1992 |
Kavanagh KL, Cargill GS. Lattice strain from substitutional Ga and from holes in heavily doped Si:Ga. Physical Review. B, Condensed Matter. 45: 3323-3331. PMID 10001903 DOI: 10.1103/Physrevb.45.3323 |
0.341 |
|
| 1992 |
Chin TP, Chang JCP, Kavanagh KL, Tu CW, Kirchner PD, Woodall JM. Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy Mrs Proceedings. 281. DOI: 10.1557/Proc-281-227 |
0.336 |
|
| 1992 |
Chang J, Kavanagh K. The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction Mrs Proceedings. 263. DOI: 10.1557/PROC-263-457 |
0.312 |
|
| 1992 |
Kavanagh KL, Chang JCP, Chen J, Fernandez JM, Wieder HH. Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces Journal of Vacuum Science & Technology B. 10: 1820-1823. DOI: 10.1116/1.586205 |
0.459 |
|
| 1992 |
Jianhui Chen, Fernandez JM, Chang JCP, Kavanagh KL, Wieder HH. Modulation-doped In0.3Ga0.7As/In 0.29Al0.71As heterostructures grown on GaAs by step grading Semiconductor Science and Technology. 7: 601-603. DOI: 10.1088/0268-1242/7/4/028 |
0.62 |
|
| 1992 |
Chang JCP, Chen J, Fernandez JM, Wieder HH, Kavanagh KL. Strain relaxation of compositionally graded InxGa 1-xAs buffer layers for modulation-doped In0.3Ga 0.7As/In0.29Al0.71As heterostructures Applied Physics Letters. 60: 1129-1131. DOI: 10.1063/1.106429 |
0.604 |
|
| 1988 |
Cargill GS, Angilello J, Kavanagh KL. Lattice compression from conduction electrons in heavily doped Si:As. Physical Review Letters. 61: 1748-1751. PMID 10038886 DOI: 10.1103/Physrevlett.61.1748 |
0.311 |
|
| 1988 |
Kavanagh KL, Capano MA, Hobbs LW, Barbour JC, Marée PMJ, Schaff W, Mayer JW, Pettit D, Woodall JM, Stroscio JA, Feenstra RM. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers Journal of Applied Physics. 64: 4843-4852. DOI: 10.1063/1.341232 |
0.62 |
|
| 1987 |
Marée PMJ, Barbour JC, Van Der Veen JF, Kavanagh KL, Bulle-Lieuwma CWT, Viegers MPA. Generation of misfit dislocations in semiconductors Journal of Applied Physics. 62: 4413-4420. DOI: 10.1063/1.339078 |
0.421 |
|
| 1987 |
Ramberg LP, Enquist PM, Chen Y, Najjar FE, Eastman LF, Fitzgerald EA, Kavanagh KL. Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance Journal of Applied Physics. 61: 1234-1236. DOI: 10.1063/1.338179 |
0.382 |
|
| 1987 |
Marée P, Nakagawa K, Mulders F, van der Veen J, Kavanagh K. Thin epitaxial Ge−Si(111) films: Study and control of morphology Surface Science. 191: 305-328. DOI: 10.1016/S0039-6028(87)81180-9 |
0.386 |
|
| 1987 |
Batson PE, Kavanagh KL, Wong CY, Woodall JM. Local bonding and electronic structure obtained from electron energy loss scattering Ultramicroscopy. 22: 89-101. DOI: 10.1016/0304-3991(87)90053-2 |
0.409 |
|
| 1987 |
Enquist PM, Ramberg LP, Najjar FE, Schaff WJ, Kavanagh KL, Wicks GW, Eastman LF. Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors Journal of Crystal Growth. 81: 378-382. DOI: 10.1016/0022-0248(87)90420-9 |
0.309 |
|
| 1986 |
Batson PE, Kavanagh KL, Woodall JM, Mayer JW. Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface. Physical Review Letters. 57: 2729-2732. PMID 10033846 DOI: 10.1103/Physrevlett.57.2729 |
0.525 |
|
| 1986 |
Fitzgerald E, Kavanagh K, Ast D, Kirchner P, Pettit G, Woodall J. Cathodoluminescence of Ingaas-GaAs Single Heterostructures Mrs Proceedings. 82. DOI: 10.1557/Proc-82-367 |
0.451 |
|
| 1986 |
Kavanagh KL, Magee CW, Mayer JW. The Diffusion of Phosphorus and Indium into Gallium Arsenide from Polycrystalline-Silicon Mrs Proceedings. 77: 785. DOI: 10.1557/Proc-77-785 |
0.359 |
|
| 1986 |
Ramberg L, Chen Y, Enquist P, Najjar F, Eastman L, Kavanagh K. High-frequency performance of lattice-strained heterojunction GaInAs/GaAs bipolar transistors Electronics Letters. 22: 1123. DOI: 10.1049/El:19860770 |
0.33 |
|
| 1986 |
KAVANAGH KL, MAYER JW, MAGEE CW, SHEETS J, TONG J, KIRCHNER PD, WOODALL JM, HALLER I. ChemInform Abstract: The Polycrystalline-Si Contact to GaAs. Chemischer Informationsdienst. 17. DOI: 10.1002/Chin.198640331 |
0.461 |
|
| 1984 |
Palmrøm CJ, Kavanagh KL, Hollis MJ, Mukherjee SD, Mayer JW. Improved Uniformity of Reacted GaAs Contacts by Interface Mixing Mrs Proceedings. 37. DOI: 10.1557/Proc-37-473 |
0.461 |
|
| 1983 |
Woodall JM, Pettit GD, Jackson TN, Lanza C, Kavanagh KL, Mayer JW. Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces Physical Review Letters. 51: 1783-1786. DOI: 10.1103/Physrevlett.51.1783 |
0.527 |
|
| 1982 |
Gyulai J, Fastow R, Kavanagh K, Thompson MO, Palmstrom CJ, Hewett CA, Mayer JW. Crystallization of Amorphous Silicon Films by Pulsed Ion Beam Annealing Mrs Proceedings. 13. DOI: 10.1557/PROC-13-455 |
0.467 |
|
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