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Gary W. Wicks - Publications

Affiliations: 
1987- Institute of Optics University of Rochester, Rochester, NY 
Area:
Molecular Beam Epitaxy; Semiconductor Optoelectronics
Website:
http://www2.optics.rochester.edu/workgroups/wicks/index.htm
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136 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Hughes WD, Savich GR, Shayan K, Vamivakas AN, Wicks GW. Large barrier InAs quantum dots with efficient room temperature photon emission at telecom wavelengths Applied Physics Letters. 116: 204001. DOI: 10.1063/5.0005785  0.357
2019 Craig AP, Al-Saymari F, Jain M, Bainbridge A, Savich GR, Golding T, Krier A, Wicks GW, Marshall AR. Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared Applied Physics Letters. 114: 151107. DOI: 10.1063/1.5082895  0.343
2018 Marozas BT, Hughes WD, Du X, Sidor DE, Savich GR, Wicks GW. Surface dark current mechanisms in III-V infrared photodetectors [Invited] Optical Materials Express. 8: 1419-1424. DOI: 10.1364/Ome.8.001419  0.348
2017 Akbas Y, Plecenik T, Ďurina P, Plecenik A, Jukna A, Wicks G, Sobolewski R. Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection Proceedings of Spie. 10229. DOI: 10.1117/12.2270908  0.413
2017 O'Loughlin TA, Savich GR, Sidor DE, Marozas BT, Golding TD, Jamison KD, Fredin L, Fowler B, Priyantha W, Wicks GW. Mid-IR resonant cavity detectors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 4. DOI: 10.1116/1.4977780  0.375
2016 Hossain K, Höglund L, Phinney LC, Golding TD, Wicks G, Khoshakhlagh A, Ting DZY, Soibel A, Gunapala SD. Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices Journal of Electronic Materials. 45: 5626-5629. DOI: 10.1007/S11664-016-4617-Z  0.31
2016 Sidor DE, Savich GR, Wicks GW. Surface Leakage Mechanisms in III–V Infrared Barrier Detectors Journal of Electronic Materials. 45: 4663-4667. DOI: 10.1007/S11664-016-4451-3  0.381
2015 Sidor DE, Savich GR, Wicks GW. Surface conduction in InAs and GaSb Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2188878  0.372
2015 Craig AP, Jain M, Wicks G, Golding T, Hossain K, McEwan K, Howle C, Percy B, Marshall ARJ. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb Applied Physics Letters. 106. DOI: 10.1063/1.4921468  0.399
2014 Jain M, Wicks G, Marshall A, Craig A, Golding T, Hossain K, McEwan K, Howle C. Development of an ultrahigh-performance infrared detector platform for advanced spectroscopic sensing systems Proceedings of Spie - the International Society For Optical Engineering. 9073. DOI: 10.1117/12.2054328  0.342
2013 Jain M, Pedrazzani JR, Golding TG, Cottier R, Holland OW, Hellmer R, Wicks GW. NBn dark current reduction by UV hydrogenation Infrared Physics and Technology. 59: 156-157. DOI: 10.1016/J.Infrared.2012.12.032  0.728
2013 Savich GR, Pedrazzani JR, Sidor DE, Wicks GW. Benefits and limitations of unipolar barriers in infrared photodetectors Infrared Physics and Technology. 59: 152-155. DOI: 10.1016/J.Infrared.2012.12.031  0.721
2012 Ciftcioglu B, Berman R, Wang S, Hu J, Savidis I, Jain M, Moore D, Huang M, Friedman EG, Wicks G, Wu H. 3-D integrated heterogeneous intra-chip free-space optical interconnect. Optics Express. 20: 4331-45. PMID 22418191 DOI: 10.1364/Oe.20.004331  0.476
2012 Wu H, Ciftcioglu B, Berman R, Hu J, Wang S, Savidis I, Jain M, Moore D, Huang M, Friedman EG, Wicks G. Chip-scale demonstration of 3-D integrated intra-chip free-space optical interconnect Proceedings of Spie - the International Society For Optical Engineering. 8265. DOI: 10.1117/12.913314  0.479
2011 Savich GR, Pedrazzani JR, Maimon S, Wicks GW. Application of epitaxial unipolar barriers to reduce noise currents in photodetectors International Journal of High Speed Electronics and Systems. 20: 557-564. DOI: 10.1142/S0129156411006854  0.75
2011 Savich GR, Pedrazzani JR, Sidor DE, Maimon S, Wicks GW. Use of unipolar barriers to block dark currents in infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.884075  0.751
2011 Ciftcioglu B, Berman R, Zhang J, Darling Z, Wang S, Hu J, Xue J, Garg A, Jain M, Savidis I, Moore D, Huang M, Friedman EG, Wicks G, Wu H. A 3-D integrated intrachip free-space optical interconnect for many-core chips Ieee Photonics Technology Letters. 23: 164-166. DOI: 10.1109/Lpt.2010.2093876  0.465
2011 Savich GR, Pedrazzani JR, Sidor DE, Maimon S, Wicks GW. Dark current filtering in unipolar barrier infrared detectors Applied Physics Letters. 99. DOI: 10.1063/1.3643515  0.74
2010 Wicks GW, Savich GR, Pedrazzani JR, Maimon S. Infrared detector epitaxial designs for suppression of surface leakage current Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.842427  0.724
2010 Savich GR, Pedrazzani JR, Maimon S, Wicks GW. Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3276513  0.755
2010 Savich GR, Pedrazzani JR, Maimon S, Wicks GW. Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2540-2543. DOI: 10.1002/Pssc.200983911  0.748
2009 Tiedje T, Tu CW, Cheng NK, Wicks G. Fifteenth International Conference on molecular beam epitaxy Journal of Crystal Growth. 311: 1623-1624. DOI: 10.1016/J.Jcrysgro.2009.01.120  0.313
2008 Pedrazzani JR, Maimon S, Wicks GW. Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors Electronics Letters. 44: 1487-1488. DOI: 10.1049/El:20082925  0.744
2006 Kuznetsov VV, Wicks GW. Molecular beam epitaxy growth of midinfrared "w" light emitting diodes on InAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1548-1552. DOI: 10.1116/1.2200379  0.433
2006 Maimon S, Wicks GW. nBn detector, an infrared detector with reduced dark current and higher operating temperature Applied Physics Letters. 89. DOI: 10.1063/1.2360235  0.337
2005 Wicks GW, Koch MW, Pedrazzani JR. Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1186-1189. DOI: 10.1116/1.1878972  0.74
2004 Wu X, Averett KL, Maimon S, Koch MW, Wicks GW. Physical processes of current gain in InAs bipolar junction transistors Physica E: Low-Dimensional Systems and Nanostructures. 20: 511-514. DOI: 10.1016/J.Physe.2003.08.069  0.768
2003 Wu X, Maimon S, Averett KL, Koch MW, Wicks GW. Emitter injection efficiency and base transport factor in InAs bipolar transistors Journal of Applied Physics. 94: 5423-5425. DOI: 10.1063/1.1606851  0.743
2003 Averett KL, Wu X, Koch MW, Wicks GW. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy Journal of Crystal Growth. 251: 852-857. DOI: 10.1016/S0022-0248(02)02366-7  0.78
2002 Averett KL, Maimon S, Wu X, Koch MW, Wicks GW. InAs-based bipolar transistors grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1213-1216. DOI: 10.1116/1.1459461  0.767
2002 Averett KL, Wu X, Maimon S, Koch MW, El-Naggar A, Wicks GW. Device and materials characteristics of MBE-grown InAs bipolar transistors Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 101-102. DOI: 10.1109/MBE.2002.1037779  0.736
2002 Maimon S, Averett KL, Wu X, Koch MW, Wicks GW. InAs-based heterojunction bipolar transistors Electronics Letters. 38: 344-346. DOI: 10.1049/El:20020214  0.765
2001 Hayduk MJ, Bussjager RJ, Johns ST, Gerhardstein CM, Wicks GW. Development of semiconductor saturable absorbers for use in photonic analog to digital converters Proceedings of Spie - the International Society For Optical Engineering. 4386: 22-28. DOI: 10.1117/12.434222  0.314
2001 Ye H, Wicks GW, Fauchet PM. Electron and hole dynamics in GaN Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 82: 131-133. DOI: 10.1016/S0921-5107(00)00768-6  0.336
2001 Jothilingam R, Koch MW, Posthill JB, Wicks GW. A study of cracking in GaN grown on compliant silicon by molecular beam epitaxy Journal of Electronic Materials. 30: 821-824. DOI: 10.1007/S11664-001-0064-5  0.315
2000 Ye H, Wicks GW, Fauchet PM. Hot hole relaxation dynamics in p-GaN Applied Physics Letters. 77: 1185-1187. DOI: 10.1063/1.1289651  0.319
2000 Gupta VK, Koch MW, Watkins NJ, Gao Y, Wicks GW. Molecular beam epitaxial growth of BGaAs ternary compounds Journal of Electronic Materials. 29: 1387-1391. DOI: 10.1007/S11664-000-0123-3  0.385
2000 Gupta VK, Averett KL, Koch MW, Mcintyre BL, Wicks GW. Selective area growth of GaN using gas source molecular beam epitaxy Journal of Electronic Materials. 29: 322-324. DOI: 10.1007/S11664-000-0071-Y  0.757
1999 Gupta VK, Wamsley CC, Koch MW, Wicks GW. Native oxides and regrowth on III–N surfaces Journal of Vacuum Science & Technology B. 17: 1249-1251. DOI: 10.1116/1.590732  0.328
1999 Gupta VK, Wamsley CC, Koch MW, Wicks GW. Molecular beam epitaxy growth of boron-containing nitrides Journal of Vacuum Science & Technology B. 17: 1246-1248. DOI: 10.1116/1.590731  0.383
1999 Ye H, Wicks GW, Fauchet PM. Hot electron relaxation time in GaN Applied Physics Letters. 74: 711-713. DOI: 10.1063/1.122995  0.325
1997 Jordan RH, Hall DG, King O, Wicks G, Rishton S. Lasing behavior of circular grating surface-emitting semiconductor lasers Journal of the Optical Society of America B-Optical Physics. 14: 449-453. DOI: 10.1364/Josab.14.000449  0.339
1997 Wamsley CC, Koch MW, Wicks GW. Low threshold 1.3 μm InAsP/GaInAsP lasers grown by solid-source molecular beam epitaxy Journal of Crystal Growth. 175: 42-45. DOI: 10.1016/S0022-0248(96)00949-9  0.381
1996 Krol MF, Hayduk MJ, Johns ST, Teegarden KJ, Wicks GW. Nonlinear optical properties of semiconductor quantum well structures near 1.55 μm Proceedings of Spie. 2749: 47-53. DOI: 10.1117/12.243113  0.324
1996 Wamsley CC, Koch MW, Wicks GW. Solid source molecular beam epitaxy of GaInAsP/lnP: Growth mechanisms and machine operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2322-2324. DOI: 10.1116/1.588850  0.37
1996 Wamsley CC, Koch MW, Wicks GW. Solid source molecular beam epitaxy of low threshold strained layer 1.3 /spl mu/m InAsP/GaInAsP lasers Electronics Letters. 32: 1674-1675. DOI: 10.1049/El:19961090  0.372
1995 Xu Z, Fauchet PM, Rella CW, Richman BA, Schwettman HA, Wicks GW. Hole relaxation in p-type InxGa1-xAs/AlyGa1-yAs quantum wells observed by ultrafast midinfrared spectroscopy. Physical Review. B, Condensed Matter. 51: 10631-10634. PMID 9977759 DOI: 10.1103/Physrevb.51.10631  0.356
1995 Fauchet PM, Wicks GW, Kostoulas Y, Lobad AI, Ucer KB. The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects Mrs Proceedings. 378. DOI: 10.1557/Proc-378-171  0.376
1995 Kohnke GE, Wicks GW. Second Quantized State Lasing and Gain Spectra Measurements in n-Type Modulation Doped GaAs-AlGaAs Quantum-Well Lasers Ieee Journal of Quantum Electronics. 31: 1941-1946. DOI: 10.1109/3.469274  0.382
1995 Huang ZC, Wie CR, Varriano JA, Koch MW, Wicks GW. Phosphorus-vacancy-related deep levels in GaInP layers Journal of Applied Physics. 77: 1587-1590. DOI: 10.1063/1.358911  0.382
1995 Kostoulas Y, Ucer KB, Wicks GW, Fauchet PM. Femtosecond carrier dynamics in low-temperature grown Ga 0.51In0.49P Applied Physics Letters. 67: 3756. DOI: 10.1063/1.115373  0.331
1995 Kohnke GE, Koch MW, Wood CEC, Wicks GW. Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser active regions Applied Physics Letters. 66: 3447. DOI: 10.1063/1.113475  0.386
1995 Xu Z, Fauchet PM, Rella CW, Richman BA, Schwettman HA, Wicks GW. Second harmonic generation near 4 μm in p-type asymmetric GaAs/AlGaAs/AlAs quantum wells Solid State Communications. 93: 903-907. DOI: 10.1016/0038-1098(94)00822-1  0.363
1994 Johnson FG, Kohnke GE, Wicks GW. Optical characterization of AlInP/GaAs heterostructures Materials Research Society Symposium Proceedings. 324: 279-284. DOI: 10.1557/Proc-324-279  0.382
1994 Gong T, Young JF, Wicks GW, Kelly PJ, Fauchet PM. Hot carrier dynamics near the Fermi edge of n-doped GaAs Semiconductor Science and Technology. 9: 459-461. DOI: 10.1088/0268-1242/9/5S/015  0.321
1994 Xie K, Wie CR, Varriano JA, Wicks GW. Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing Journal of Electronic Materials. 23: 1-6. DOI: 10.1007/Bf02651259  0.402
1993 Viturro RE, Varriano JD, Wicks GW. Cathodoluminescence Spectroscopy Studies of Growth Induced Deep Levels at GaInP. Mrs Proceedings. 325. DOI: 10.1557/Proc-325-513  0.373
1993 Viturro RE, Wicks GW. Identification of Diffusion Associated Defects at III-V Semiconductor Heterostructures Mrs Proceedings. 325. DOI: 10.1557/Proc-325-31  0.33
1993 Huang ZC, Wie CR, Varriano JA, Koch MW, Wicks GW. Phosphorus-Vacancy-Related Deep Levels in Gainp Layers Grown by Molecular Beam Epitaxy Mrs Proceedings. 325: 137. DOI: 10.1557/Proc-325-137  0.353
1993 Xu Z, Zheng LX, Vandyshev JV, Wicks GW, Fauchet PM, Richman BA, Rella CW. Picosecond nonlinear optics in semiconductor quantum wells with SCA free-electron laser Proceedings of Spie. 1854: 69-76. DOI: 10.1117/12.148047  0.331
1993 Varriano JA, Koch MW, Kohnke GE, Johnson FG, Wicks GW. AlGaInP materials grown by elemental-source molecular beam epitaxy Fibers. 1788: 21-30. DOI: 10.1117/12.141111  0.382
1993 Johnson FG, Wicks GW, Viturro RE, LaForce R. Molecular‐beam epitaxial growth of arsenide/phosphide heterostructures using valved, solid group V sources Journal of Vacuum Science & Technology B. 11: 823-825. DOI: 10.1116/1.586755  0.366
1993 Shank SM, Varriano JA, Koch MW, Wicks GW. Characteristics of modulation-doped quantum well lasers grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B. 11: 952-954. DOI: 10.1116/1.586749  0.382
1993 Sweetser JN, Dunn TJ, Waxer L, Walmsley IA, Shank SM, Wicks GW. Effects of n-type modulation doping of quantum wells on the dynamics of photoluminescence Applied Physics Letters. 63: 3461-3463. DOI: 10.1063/1.110120  0.357
1993 Johnson FG, Olmsted BL, Chen S, Wicks GW. Tilted superlattice composition profile measured by photoluminescence and Raman Journal of Crystal Growth. 127: 812-815. DOI: 10.1016/0022-0248(93)90738-I  0.351
1993 Johnson FG, Olmsted BL, Chen S, Wicks GW. Tilted superlattice composition profile determined by photoluminescence and thermal disordering Journal of Electronic Materials. 22: 331-334. DOI: 10.1007/Bf02661386  0.341
1992 Johnson FG, Wicks GW, Viturro RE, Laforce R. Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy Mrs Proceedings. 281. DOI: 10.1557/Proc-281-49  0.364
1992 Erdogan T, King O, Wicks GW, Hall DG, Anderson EH, Rooks MJ. Concentric-Circle-Grating, Surface-Emitting Semiconductor Lasers Optics & Photonics News. 3: 41-41. DOI: 10.1364/Opn.3.12.000041  0.303
1992 King O, Erdogan T, Wicks GW, Hall DG, Anderson EH, Costello D, Rooks MJ. Curved grating fabrication techniques for surface‐emitting distributed feedback lasers Journal of Vacuum Science & Technology B. 10: 2974-2978. DOI: 10.1116/1.585955  0.301
1992 Shank SM, Varriano JA, Wicks GW. Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with n-type modulation doped cores Applied Physics Letters. 61: 2851-2853. DOI: 10.1063/1.108054  0.388
1992 Erdogan T, King O, Wicks GW, Hall DG, Dennis CL, Rooks MJ. Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser Applied Physics Letters. 60: 1773-1775. DOI: 10.1063/1.107211  0.368
1992 Erdogan T, King O, Wicks GW, Hall DG, Anderson EH, Rooks MJ. Circularly symmetric operation of a concentric-circle-grating, surface- emitting, AlGaAs/GaAs quantum-well semiconductor laser Applied Physics Letters. 60: 1921-1923. DOI: 10.1063/1.107151  0.347
1992 Xie K, Wie CR, Varriano JA, Wicks GW. Interface traps and interface recombination in AlGaAs/GaAs quantum well laser diodes Applied Physics Letters. 60: 428-430. DOI: 10.1063/1.106624  0.304
1992 Varriano JA, Koch MW, Johnson FG, Wicks GW. GaInP and AlInP grown by elemental source molecular beam epitaxy Journal of Electronic Materials. 21: 195-198. DOI: 10.1007/Bf02655836  0.342
1991 Xie K, Wie CR, Wicks GW. InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature Mrs Proceedings. 241. DOI: 10.1557/Proc-241-265  0.39
1991 Viturro RE, Olmsted BL, Houde-Walter SN, Wicks GW. Low-energy cathodoluminescence spectroscopy studies of III-V superlattice interdiffusion: Optical emission properties of diffusion associated defects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2244-2250. DOI: 10.1116/1.585728  0.342
1991 Tiberio RC, Porkolab GA, Rooks MJ, Wolf ED, Lang RJ, Larsson A, Forouhar S, Cody J, Wicks GW, Erdogan T, King O, Hall DG. Facetless Bragg reflector surface‐emitting AlGaAs/GaAs lasers fabricated by electron‐beam lithography and chemically assisted ion‐beam etching Journal of Vacuum Science & Technology B. 9: 2842-2845. DOI: 10.1116/1.585653  0.341
1991 Wicks GW, Koch MW, Varriano JA, Johnson FG, Wie CR, Kim HM, Colombo P. Use of a valved, solid phosphorus source for the growth of Ga 0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy Applied Physics Letters. 59: 342-344. DOI: 10.1063/1.105590  0.353
1991 O'Brien S, Shealy JR, Wicks GW. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion Applied Physics Letters. 58: 1363-1365. DOI: 10.1063/1.104309  0.537
1990 Shank SM, Wicks GW. Enhanced electro-optic polarisation rotation in AlGaAs/GaAs (111) quantum wells Electronics Letters. 26: 1769-1770. DOI: 10.1049/El:19901136  0.323
1989 Norris TB, Song XJ, Schaff WJ, Eastman LF, Wicks G, Mourou GA. Tunneling escape time of electrons from a quantum well under the influence of an electric field Applied Physics Letters. 54: 60-62. DOI: 10.1063/1.100835  0.49
1989 De Cooman BC, Carter CB, Wicks GW, Tanoue T, Eastman LF. The structure of InAs/GaSb superlattices Thin Solid Films. 170: 49-62. DOI: 10.1016/0040-6090(89)90621-4  0.391
1988 Radulescu DC, Wicks GW, Schaff WJ, Calawa AR, Eastman LF. Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 6: 615-616. DOI: 10.1116/1.584413  0.53
1988 Ralston JD, O'Brien S, Wicks GW, Eastman LF. Room-temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices Applied Physics Letters. 52: 1511-1513. DOI: 10.1063/1.99115  0.502
1988 Radulescu DC, Wicks GW, Schaff WJ, Calawa AR, Eastman LF. Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy Journal of Applied Physics. 63: 5115-5120. DOI: 10.1063/1.340412  0.548
1987 Ksendzov A, Parayanthal P, Pollak FH, Welch D, Wicks GW, Eastman LF. Raman spectroscopy study of Al0.48In Physical Review. B, Condensed Matter. 36: 7646-7649. PMID 9942542 DOI: 10.1103/Physrevb.36.7646  0.422
1987 De Cooman BC, McKernan S, Carter CB, Ralston JR, Wicks GW, Eastman LF. The Observation of Stacking-Fault Tetrahedra in III-V Compounds Philosophical Magazine Letters. 56: 85-90. DOI: 10.1080/09500838708205254  0.331
1987 Radulescu DC, Schaff WJ, Wicks GW, Calawa AR, Eastman LF. Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy Applied Physics Letters. 51: 2248-2250. DOI: 10.1063/1.98926  0.554
1987 Bour DP, Shealy JR, Wicks GW, Schaff WJ. Optical properties of AlxIn1-xP grown by organometallic vapor phase epitaxy Applied Physics Letters. 50: 615-617. DOI: 10.1063/1.98098  0.509
1987 Shealy JR, Wicks GW. Investigation by Raman scattering of the properties of III-V compound semiconductors at high temperature Applied Physics Letters. 50: 1173-1175. DOI: 10.1063/1.97953  0.54
1987 Najjar FE, Radulescu DC, Chen YK, Wicks GW, Tasker PJ, Eastman LF. Dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor Applied Physics Letters. 50: 1915-1917. DOI: 10.1063/1.97685  0.584
1987 Radulescu DC, Wicks GW, Schaff WJ, Calawa AR, Eastman LF. Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial-grown GaAs/AlGaAs modulation-doped quantum-well structures Journal of Applied Physics. 62: 954-960. DOI: 10.1063/1.339707  0.554
1987 Radulescu DC, Wicks GW, Schaff WJ, Calawa AR, Eastman LF. Anisotropic transport in modulation-doped quantum-well structures Journal of Applied Physics. 61: 2301-2306. DOI: 10.1063/1.337940  0.542
1987 Palmateer L, Tasker P, Itoh T, Brown A, Wicks G, Eastman L. Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs Electronics Letters. 23: 53-55. DOI: 10.1049/El:19870039  0.579
1987 Griem HT, Hsieh KH, D'Haenens IJ, Delaney MJ, Henige JA, Wicks GW, Brown AS. Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy Journal of Crystal Growth. 81: 383-390. DOI: 10.1016/0022-0248(87)90421-0  0.536
1987 Enquist PM, Ramberg LP, Najjar FE, Schaff WJ, Kavanagh KL, Wicks GW, Eastman LF. Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors Journal of Crystal Growth. 81: 378-382. DOI: 10.1016/0022-0248(87)90420-9  0.429
1987 Radulescu DC, Wicks GW, Schaff WJ, Calawa AR, Eastman LF. Anisotropic transport in modulation doped quantum well structures Journal of Crystal Growth. 81: 106-108. DOI: 10.1016/0022-0248(87)90374-5  0.48
1987 Najjar FE, Radulescu DC, Chen YK, Wicks GW, Tasker PJ, Eastman LF. CHARACTERIZATION OF THE AlGaAs/GaAs TUNNELING EMITTER BIPOLAR TRANSISTOR . 284-292.  0.339
1986 Ohashi T, Bour DP, Itoh T, Berry JD, Jost SR, Wicks GW, Eastman LF. Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal‐insulator‐semiconductor field‐effect transistors Journal of Vacuum Science & Technology B. 4: 622-624. DOI: 10.1116/1.583393  0.454
1986 Ralston J, Wicks GW, Eastman LF. Reflection high‐energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs Journal of Vacuum Science & Technology B. 4: 594-597. DOI: 10.1116/1.583383  0.548
1986 Shum K, Ho PP, Alfano RR, Welch DF, Wicks GW, Eastman LF. Dependence of Electron Temperature on Well Width in the Al<inf>0.48</inf>In<inf>0.52</inf>As/Ga<inf>0.47</inf>In<inf>0.53</inf>As Single-Quantum Well Ieee Journal of Quantum Electronics. 22: 1811-1815. DOI: 10.1109/Jqe.1986.1073177  0.487
1986 Brown AS, Itoh T, Wicks G, Eastman LF. Si diffusion in GaInAs‐AlInAs high‐electron‐mobility transistor structures Journal of Applied Physics. 60: 3495-3498. DOI: 10.1063/1.337600  0.585
1986 Ralston J, Wicks GW, Eastman LF, De Cooman BC, Carter CB. Defect structure and intermixing of ion-implanted AlxGa 1-xAs/GaAs superlattices Journal of Applied Physics. 59: 120-123. DOI: 10.1063/1.336852  0.49
1986 Tsui RK, Curless JA, Kramer GD, Peffley MS, Wicks GW. Properties of AlxGa1-xAs (xAl≅0.3) grown by molecular-beam epitaxy on misoriented substrates Journal of Applied Physics. 59: 1508-1512. DOI: 10.1063/1.336456  0.347
1986 Capani PM, Mukherjee SD, Zwicknagl P, Berry JD, Griem HT, Wicks GW, Rathbun L, Eastman LF. A study of alloyed AuGeNi/Ag/Au based ohmic contacts on the Al0.48In0.52As/Ga0.47In0.53As system Journal of Electronic Materials. 15: 185-191. DOI: 10.1007/BF02655335  0.414
1985 Shum K, Ho PP, Alfano RR, Welch DF, Wicks GW, Eastman LF. Photoluminescence determination of well depth of Ga Physical Review. B, Condensed Matter. 32: 3806-3810. PMID 9937530 DOI: 10.1103/Physrevb.32.3806  0.373
1985 Cooman BCD, Carter CB, Ralston J, Wicks GW, Eastman LF. THE DEFECT STRUCTURE OF ION-IMPLANTED Al x Ga 1−x As/GaAs SUPERLATFICES Mrs Proceedings. 56: 333. DOI: 10.1557/Proc-56-333  0.376
1985 Ralston J, Wicks GW, Eastman LF, Rathbun L, DeCooman BC, Carter CB. INTERMIXING OF ION-IMLANTED AlGaAs/GaAs SUPERLATTICES Mrs Proceedings. 56: 327. DOI: 10.1557/Proc-56-327  0.39
1985 Capani PM, Mukerjee SD, Rathbun L, Griem HT, Wicks GW, Eastman LF, Hunt J. The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis Mrs Proceedings. 48: 203. DOI: 10.1557/Proc-48-203  0.354
1985 Hsieh KH, Wicks G, Calawa AR, Eastman LF. Summary Abstract: Internal photoemission studies of (GaIn)As, (AlIn)As Schottky diodes and (GaIn)As/(AlIn)As heterojunction grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. 3: 700-702. DOI: 10.1116/1.583222  0.494
1985 Griem T, Nathan M, Wicks GW, Huang J, Capani PM, Eastman LF. Summary Abstract: High conductance and low persistent photoconductivity in Ga0.47In0.53As/Al0.48In0.52As modulation‐doped structures with Pinchoff capabilities Journal of Vacuum Science & Technology B. 3: 655-656. DOI: 10.1116/1.583164  0.391
1985 Enquist P, Lunardi LM, Wicks GW, Eastman LF, Hitzman C. Summary Abstract: Effects of high levels of Be in GaAs by MBE Journal of Vacuum Science & Technology B. 3: 634-635. DOI: 10.1116/1.583156  0.473
1985 Shealy JR, Schaus CF, Wicks GW. Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering Applied Physics Letters. 47: 125-127. DOI: 10.1063/1.96236  0.546
1985 Welch DF, Wicks GW, Eastman LF. Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells Applied Physics Letters. 46: 991-993. DOI: 10.1063/1.95791  0.511
1985 Welch DF, Wicks GW, Eastman LF, Parayanthal P, Pollak FH. IMPROVEMENT OF OPTICAL CHARACTERISTICS OF Al//0//. //4//8In//0//. //5//2As GROWN BY MOLECULAR BEAM EPITAXY Applied Physics Letters. 46: 169-171. DOI: 10.1063/1.95672  0.51
1985 Enquist P, Wicks GW, Eastman LF, Hitzman C. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy Journal of Applied Physics. 58: 4130-4134. DOI: 10.1063/1.335543  0.525
1985 Huang JC, Wicks GW, Calawa AR, Eastman LF. Optimised HEMT structure with an Al0.45 Ga0.55As spacer and an Al0.20Ga0.80As doped region Electronics Letters. 21: 925-926. DOI: 10.1049/El:19850654  0.421
1985 Itoh T, Griem T, Wicks GW, Eastman LF. Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures Electronics Letters. 21: 373-374. DOI: 10.1049/El:19850266  0.431
1985 Brown AS, Palmateer SC, Wicks GW, Eastman LF, Calawa AR. The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE Journal of Electronic Materials. 14: 367-378. DOI: 10.1007/Bf02661228  0.612
1985 Ohashi T, Wicks GW, Mukherjee S, Eastman LF, Calawa AR. Sb induced nucleation of InSb on (III) InSb substrates by molecular beam epitaxy Journal of Electronic Materials. 14: 419-432. DOI: 10.1007/Bf02654016  0.453
1985 Enquist P, Lunardi LM, Welch DF, Wicks GW, Shealy JR, Eastman LF, Calawa AR. OPTIMIZATION OF THE INJECTION EFFICIENCY ( gamma ) OF THE HBT BY STUDYING ELECTROLUMINESCENCE (EL) OF MBE HETEROJUNCTION DIODES Institute of Physics Conference Series. 599-604.  0.56
1984 Welch DF, Wicks GW, Eastman LF. Calculation of the conduction band discontinuity for Ga 0.47In0.53As/Al0.48In0.52As heterojunction Journal of Applied Physics. 55: 3176-3179. DOI: 10.1063/1.333348  0.497
1983 Shealy JR, Wicks GW, Ohno H, Eastman LF. Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy Japanese Journal of Applied Physics. 22. DOI: 10.1143/Jjap.22.L639  0.647
1983 Brown AS, Wicks GW, Eastman LF, Palmateer SC. DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena. 2: 194-196. DOI: 10.1116/1.582777  0.627
1983 Welch DF, Wicks GW, Eastman LF. Optical properties of GaInAs/AlInAs single quantum wells Applied Physics Letters. 43: 762-764. DOI: 10.1063/1.94497  0.523
1983 Parayanthal P, Ro CS, Pollak FH, Stanley CR, Wicks GW, Eastman LF. Electroreflectance investigation of (Ga1-xAl x)0.47In0.53As lattice matched to InP Applied Physics Letters. 43: 109-111. DOI: 10.1063/1.94146  0.37
1983 Hsieh KH, Ohno H, Wicks G, Eastman LF. Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions Electronics Letters. 19: 160-162. DOI: 10.1049/El:19830112  0.462
1983 Maki PA, Palmateer SC, Wicks GW, Eastman LF, Calawa AR. Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells Journal of Electronic Materials. 12: 1051-1063. DOI: 10.1007/Bf02654974  0.535
1983 Shealy JR, Wicks GW, Ohno H, Eastman LF. INFLUENCE OF SUBSTRATE TEMPERATURE ON THE GROWTH OF AlGaAs/GaAs QUANTUM WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR PHASE EPITAXY Japanese Journal of Applied Physics, Part 2: Letters. 22: 639-641.  0.568
1983 Shealy JR, Kreismanis VG, Wagner DK, Wicks GW, Schaff WJ, Xu ZY, Ballantyne JM, Eastman LF, Griffiths R. CHARACTERIZATION OF HIGH-PURITY GaAs GROWN BY LOW-PRESSURE OMVPE Institute of Physics Conference Series. 109-116.  0.499
1982 Welch DF, Wicks GW, Woodard DW, Eastman LF. GaInAs-AlInAs HETEROSTRUCTURES FOR OPTICAL DEVICES GROWN BY MBE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 202-204. DOI: 10.1116/1.582488  0.531
1982 Wood CEC, Desimone D, Singer K, Wicks GW. Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds Journal of Applied Physics. 53: 4230-4235. DOI: 10.1063/1.331248  0.384
1982 Wicks G, Wood CEC, Ohno H, Eastman LF. Optical quality GaInAs grown by molecular beam epitaxy Journal of Electronic Materials. 11: 435-440. DOI: 10.1007/Bf02654681  0.492
1981 Woodall JM, Rupprecht H, Chicotka RJ, Wicks G. Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source Applied Physics Letters. 38: 639-641. DOI: 10.1063/1.92462  0.495
1981 Wicks G, Wang WI, Wood CEC, Eastman LF, Rathbun L. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy Journal of Applied Physics. 52: 5792-5796. DOI: 10.1063/1.329470  0.519
1981 Ohno H, Wood CEC, Rathbun L, Morgan DV, Wicks GW, Eastman LF. GaInAs-AlInAs structures grown by molecular beam epitaxy Journal of Applied Physics. 52: 4033-4037. DOI: 10.1063/1.329212  0.572
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