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Chu R. Wie - Publications

Affiliations: 
Electrical Engineering State University of New York, Buffalo, Buffalo, NY, United States 
Area:
Electronics and Electrical Engineering
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Year Citation  Score
2005 Park M, Na I, Wie CR. A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 97: 14503. DOI: 10.1063/1.1826213  0.577
2003 Wang Z, Park M, Gillberg JE, Wie CR. Cell structure and saturation effects of radiation-hardened power VDMOSFET devices under extreme dose X-ray irradiation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 211: 251-258. DOI: 10.1016/S0168-583X(03)01266-7  0.354
2001 Park MS, Wie CR. Study of radiation effects in γ-ray irradiated power VDMOSFET by DCIV technique Ieee Transactions On Nuclear Science. 48: 2285-2293. DOI: 10.1109/23.983208  0.406
1995 Huang ZC, Wie CR, Varriano JA, Koch MW, Wicks GW. Phosphorus-vacancy-related deep levels in GaInP layers Journal of Applied Physics. 77: 1587-1590. DOI: 10.1063/1.358911  0.357
1995 Huang ZC, Eissler E, Wie CR. Role of cadmium vacancy-related defects in CdTe nuclear detectors Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 100: 507-510. DOI: 10.1016/0168-583X(95)00366-5  0.319
1994 Wie CR. High resolution x-ray diffraction characterization of semiconductor structures Materials Science & Engineering R-Reports. 13: 1-56. DOI: 10.1016/0927-796X(94)90008-6  0.405
1994 Xie K, Wie CR, Varriano JA, Wicks GW. Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing Journal of Electronic Materials. 23: 1-6. DOI: 10.1007/Bf02651259  0.331
1993 Huang ZC, Wie CR. Contact-Related Deep States in AI-GaInP/GaAs Interface Mrs Proceedings. 325. DOI: 10.1557/Proc-325-209  0.416
1993 Huang ZC, Wie CR, Varriano JA, Koch MW, Wicks GW. Phosphorus-Vacancy-Related Deep Levels in Gainp Layers Grown by Molecular Beam Epitaxy Mrs Proceedings. 325: 137. DOI: 10.1557/Proc-325-137  0.335
1993 Huang ZC, Wie CR, Johnstone DK, Stutz CE, Evans KR. Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions Journal of Applied Physics. 73: 4362-4366. DOI: 10.1063/1.352821  0.402
1992 Xie K, Wie CR, Varriano JA, Wicks GW. Interface traps and interface recombination in AlGaAs/GaAs quantum well laser diodes Applied Physics Letters. 60: 428-430. DOI: 10.1063/1.106624  0.404
1991 Huang ZC, Wie CR. Study of Deep Levels in LT-GaAs Materials and SI-GaAs Wafers by an Improved Thermoelectric Effect Spectroscopy Mrs Proceedings. 241. DOI: 10.1557/Proc-241-63  0.435
1991 Huang ZC, Wie CR, Johnstone D, Stutz CE, Evans KR. Energy and Depth Distributions of Interface States and bulk Traps and their Electronic Effects in GalnAs/GaAs Heterojuntions Mrs Proceedings. 240: 633. DOI: 10.1557/Proc-240-633  0.424
1991 Choi YW, Kim HM, Wie CR. Simulation Design and Device Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Structures with a GalnAs Emitter Spacer Layer Mrs Proceedings. 240: 627. DOI: 10.1557/Proc-240-627  0.42
1991 Xie K, Kim HM, Wie CR, Varriano JA, Wicks GW. Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes Mrs Proceedings. 240: 591. DOI: 10.1557/Proc-240-591  0.363
1991 Wie CR, Kim HM. Kinematical x‐ray diffraction model with a new boundary condition for analysis of Bragg‐peak profiles of layered crystals Journal of Applied Physics. 69: 6406-6412. DOI: 10.1063/1.348844  0.31
1991 Huang ZC, Xie K, Wie CR. A simple and reliable method of thermoelectic effect spectroscopy for semi‐insulating III‐V semiconductors Review of Scientific Instruments. 62: 1951-1954. DOI: 10.1063/1.1142398  0.391
1991 Xie K, Wie CR. Annealing of damage-induced deep levels in MeV Si-implanted GaAs Nuclear Inst. and Methods in Physics Research, B. 53: 294-300. DOI: 10.1016/0168-583X(91)95617-M  0.413
1991 Xie K, Huang ZC, Wie CR. Deep level studies in MBE GaAs grown at low temperature Journal of Electronic Materials. 20: 553-558. DOI: 10.1007/Bf02666017  0.352
1991 Choi YW, Xie K, Kim HM, Wie CR. Interface trap and interface depletion in lattice-mismatched GaInAs/GaAs heterostructures Journal of Electronic Materials. 20: 545-551. DOI: 10.1007/Bf02666016  0.428
1990 Wie CR, Xie K, Bardin TT, Pronko JG, Look DC, Evans KR, Stutz CE. Characterization of MBE GaAs Layers Grown at 200°C–300°C Mrs Proceedings. 198: 383. DOI: 10.1557/Proc-198-383  0.368
1990 Evans KR, Stutz CE, Yu PW, Wie CR. Mass-spectrometric determination of antimony incorporation during III-V molecular beam epitaxy Journal of Vacuum Science & Technology B. 8: 271-275. DOI: 10.1116/1.584825  0.345
1990 Choi YW, Wie CR, Evans KR, Stutz CE. Electrical and structural study of partially relaxed Ga 0.92In0.08As(p+)/ GaAs(n) diodes Journal of Applied Physics. 68: 1303-1309. DOI: 10.1063/1.346699  0.398
1990 Chen JF, Chen J, Lee YS, Choi YW, Xie K, Liu PL, Anderson WA, Wie CR. Shallow levels, deep levels and electrical characteristics in Zn‐doped GaInP/InP Journal of Applied Physics. 67: 3711-3716. DOI: 10.1063/1.345011  0.347
1989 Choi YW, Wie CR, Evans KR, Stutz CE. Heterojuncion Study of Ga0.92In08as(P+)/GaAs(n) Diodes: Correlation of Electrical and Strucrural Characteristics Mrs Proceedings. 160. DOI: 10.1557/Proc-160-795  0.301
1989 Wie CR, Choi Y, Kim HM, Chen JF, Vreeland T, Tsai C-. Rocking-Curve Peak Shift in Thin Heterojunction Single Layers Mrs Proceedings. 145: 487. DOI: 10.1557/Proc-145-487  0.325
1989 Wie CR. X-Ray Interference Measurements of Ultrathin Semiconductor Layers Mrs Proceedings. 145. DOI: 10.1557/Proc-145-467  0.378
1989 Wie CR. Rocking curve peak shift in thin semiconductor layers Journal of Applied Physics. 66: 985-988. DOI: 10.1063/1.343482  0.359
1989 Wie CR. X-ray interference in quantum-well laser structures Journal of Applied Physics. 65: 1036-1038. DOI: 10.1063/1.343064  0.366
1989 Wie CR. Relaxation and rocking‐curve broadening of strained (Ga,In)As single layers on (001) GaAs Journal of Applied Physics. 65: 2267-2271. DOI: 10.1063/1.342840  0.373
1989 Wie CR, Chen J, Kim HM, Liu PL, Choi YW, Hwang DM. X‐ray interference measurement of ultrathin semiconductor layers Applied Physics Letters. 55: 1774-1776. DOI: 10.1063/1.102189  0.378
1989 Chen W, Chen JF, Chen J, Kim HM, Anthony L, Wie CR, Liu PL. Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow‐rate modulation epitaxy Applied Physics Letters. 55: 749-751. DOI: 10.1063/1.101795  0.369
1989 Bardin TT, Pronko JG, Mardinly AJ, Wie CR. MeV ion implantation studies on LPE films grown on InP Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 40: 533-536. DOI: 10.1016/0168-583X(89)91039-2  0.37
1989 Wie CR, Burns G, Dacol FH, Pettit GD, Woodall JM. X-ray and Raman studies of MeV ion-bombarded GaInAs/GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 43: 560-564. DOI: 10.1016/0168-583X(89)90406-0  0.401
1989 Wie CR. Effects of MeV ion bombardment and thermal annealing on Ga1−x InxAs/GaAs☆ Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 965-969. DOI: 10.1016/0168-583X(89)90335-2  0.383
1988 Kim HM, Choi Y, Vernon S, Moise PS, Wie CR. X-Ray Studies of GaAs/Si and ZnS/Si Mrs Proceedings. 144: 323. DOI: 10.1557/Proc-144-323  0.325
1987 Wie CR, Xie K, Burns G, Dacol FH, Pettit D, Woodall JM. X-Ray and Raman Studies of MeV Ion Implanted GaInAs/GaAs Mrs Proceedings. 104. DOI: 10.1557/Proc-104-499  0.363
1987 Burns G, Wie CR, Dacol FH, Pettit GD, Woodall JM. Phonon Shifts and Strains in Strained-Layer (Ga 1−x In x )As Mrs Proceedings. 102. DOI: 10.1557/Proc-102-553  0.33
1987 Burns G, Wie CR, Dacol FH, Pettit GD, Woodall JM. Phonon shifts and strains in strain‐layered (Ga1−xInx)As Applied Physics Letters. 51: 1919-1921. DOI: 10.1063/1.98300  0.319
1987 Burns G, Dacol FH, Wie CR, Burstein E, Cardona M. Phonon shifts in ion bombarded GaAs: Raman measurements Solid State Communications. 62: 449-454. DOI: 10.1016/0038-1098(87)91096-9  0.387
1986 Wie CR, Tombrello TA, Vreeland T. MeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect production. Physical Review. B, Condensed Matter. 33: 4083-4089. PMID 9938828 DOI: 10.1103/Physrevb.33.4083  0.387
1986 Burns G, Dacol FH, Baglin JEE, Wie CR, Burstein E, Cardona M. Annealing Effects in Ion Bombarded GaAs: Raman Measurements. Mrs Proceedings. 82. DOI: 10.1557/Proc-82-121  0.399
1986 Wie CR, Jones T, Tombrello TA, Vreeland T, Xiong F, Zhu Z, Burns G, Dacol FH. Radiation Defect-Induced Lattice Contraction of InP Mrs Proceedings. 74. DOI: 10.1557/Proc-74-517  0.312
1986 Wie CR, Tombrello TA, Vreeland T. Dynamical x‐ray diffraction from nonuniform crystalline films: Application to x‐ray rocking curve analysis Journal of Applied Physics. 59: 3743-3746. DOI: 10.1063/1.336759  0.397
1986 Wie CR, Vreeland T, Tombrello TA. MeV ion damage in III–V semiconductors: Saturation and thermal annealing of strain in GaAs and GaP crystals Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 16: 44-49. DOI: 10.1016/0168-583X(86)90225-9  0.385
1985 Wie CR, Vreeland T, Tombrello TA. Ion beam induced damage in CaF2 Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 9: 25-29. DOI: 10.1016/0168-583X(85)90772-4  0.345
1985 Wie CR, Shi CR, Mendenhall MH, Livi RP, Vreeland T, Tombrello TA. Two types of MeV ion beam enhanced adhesion for Au films in SiO2 Nuclear Inst. and Methods in Physics Research, B. 9: 20-24. DOI: 10.1016/0168-583X(85)90771-2  0.301
1984 Livi RP, Paine S, Wie CR, Mendenhall MH, Tang JY, Vreeland T, Tombrello TA. Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Films on GaAs Mrs Proceedings. 37. DOI: 10.1557/Proc-37-467  0.301
1984 Wie CR, Vreeland T, Tombrello TA. Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation Mrs Proceedings. 35: 305. DOI: 10.1557/Proc-35-305  0.419
1984 Tombrello TA, Wie CR, Itoh N, Nakayama T. Formation of ion damage tracks Physics Letters A. 100: 42-44. DOI: 10.1016/0375-9601(84)90351-7  0.307
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