Year |
Citation |
Score |
2012 |
Na K-, Park K-, Cristoloveanu S, Chroboczek JA, Ohata A, Xiong W, Lee J-, Bae Y. Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects Microelectronic Engineering. 98: 85-88. DOI: 10.1016/J.Mee.2012.05.027 |
0.438 |
|
2011 |
Chang SJ, Bawedin M, Xiong W, Jeon SC, Lee JH, Cristoloveanu S. A FinFET memory with remote carrier trapping in ONO buried insulator Microelectronic Engineering. 88: 1203-1206. DOI: 10.1016/J.Mee.2011.03.034 |
0.421 |
|
2010 |
Song J, Yuan Y, Yu B, Xiong W, Taur Y. Compact Modeling of Experimental n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 57: 1369-1374. DOI: 10.1109/Ted.2010.2047067 |
0.447 |
|
2010 |
Barrett C, Lederer D, Redmond G, Xiong W, Colinge JP, Quinn AJ. Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Solid-State Electronics. 54: 1273-1277. DOI: 10.1016/J.Sse.2010.05.035 |
0.633 |
|
2010 |
Lee CW, Afzalian A, Ferain I, Yan R, Akhavan ND, Xiong W, Colinge JP. Influence of gate misalignment on the electrical characteristics of MuGFETS Solid-State Electronics. 54: 226-230. DOI: 10.1016/J.Sse.2009.09.001 |
0.635 |
|
2009 |
Colinge JP, Lederer D, Afzalian A, Yan R, Lee CW, Akhavan ND, Xiong W. Properties of accumulation-mode multi-gate field-effect transistors Japanese Journal of Applied Physics. 48: 034502. DOI: 10.1143/Jjap.48.034502 |
0.673 |
|
2009 |
Esqueda IS, Barnaby HJ, McLain ML, Adell PC, Mamouni FE, Dixit SK, Schrimpf RD, Xiong W. Modeling the radiation response of fully-depleted SOI n-channel MOSFETs Ieee Transactions On Nuclear Science. 56: 2247-2250. DOI: 10.1109/Tns.2009.2012709 |
0.413 |
|
2009 |
Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850 |
0.357 |
|
2009 |
Song J, Yu B, Xiong W, Taur Y. Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 56: 533-536. DOI: 10.1109/Ted.2008.2011840 |
0.498 |
|
2009 |
Na K-, Cristoloveanu S, Bae Y-, Patruno P, Xiong W, Lee J-. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Solid-State Electronics. 53: 150-153. DOI: 10.1016/J.Sse.2008.10.016 |
0.524 |
|
2009 |
Lee CW, Afzalian A, Ferain I, Yan R, Dehdashti N, Byun KY, Colinge C, Xiong W, Colinge JP. Comparison of different surface orientation in narrow fin MuGFETs Microelectronic Engineering. 86: 2381-2384. DOI: 10.1016/J.Mee.2009.04.025 |
0.616 |
|
2008 |
Mamouni FE, Dixit SK, Schrimpf RD, Adell PC, Esqueda IS, McLain ML, Barnaby HJ, Cristoloveanu S, Xiong W. Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices Ieee Transactions On Nuclear Science. 55: 3259-3264. DOI: 10.1109/Tns.2008.2006500 |
0.545 |
|
2008 |
Lee CW, Afzalian A, Yan R, Akhavan ND, Xiong W, Colinge JP. Drain breakdown voltage in MuGFETs: Influence of physical parameters Ieee Transactions On Electron Devices. 55: 3503-3506. DOI: 10.1109/Ted.2008.2006546 |
0.592 |
|
2008 |
Nathanael R, Xiong W, Cleavelin CR, Liu TJK. Impact of gate-induced strain on MuGFET reliability Ieee Electron Device Letters. 29: 916-919. DOI: 10.1109/Led.2008.2000944 |
0.42 |
|
2008 |
Lee CW, Lederer D, Afzalian A, Yan R, Dehdashti N, Xiong W, Colinge JP. Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Solid-State Electronics. 52: 1815-1820. DOI: 10.1016/J.Sse.2008.09.006 |
0.539 |
|
2007 |
Russ C, Gossner H, Schulz T, Chaudhary N, Xiong W, Marshall A, Duvvury C, Schrufer K, Cleavelin CRR. ESD Evaluation of the Emerging MuGFET Technology Ieee Transactions On Device and Materials Reliability. 7: 152-161. DOI: 10.1109/Tdmr.2006.888288 |
0.471 |
|
2006 |
Colinge JP, Orozco A, Rudee J, Xiong W, Cleavelin CR, Schulz T, Schrüfer K, Knoblinger G, Patruno P. Radiation dose effects in trigate SOI MOS transistors Ieee Transactions On Nuclear Science. 53: 3237-3241. DOI: 10.1109/Tns.2006.885841 |
0.575 |
|
2006 |
Colinge JP, Alderman JC, Xiong W, Cleavelin CR. Quantum - Mechanical effects in trigate SOI MOSFETs Ieee Transactions On Electron Devices. 53: 1131-1136. DOI: 10.1109/Ted.2006.871872 |
0.614 |
|
2006 |
Colinge JP, Xiong W, Cleavelin CR, Schulz T, Schrüfer K, Matthews K, Patruno P. Room-temperature low-dimensional effects in Pi-Gate SOI MOSFETs Ieee Electron Device Letters. 27: 775-777. DOI: 10.1109/Led.2006.881086 |
0.588 |
|
2006 |
Shin K, Xiong W, Cho CY, Cleavelin CR, Schulz T, Schruefer K, Patruno P, Smith L, Liu TK. Study of bending-induced strain effects on MuGFET performance Ieee Electron Device Letters. 27: 671-673. DOI: 10.1109/Led.2006.878047 |
0.341 |
|
2006 |
Xiong W, Cleavelin CR, Kohli P, Huffman C, Schulz T, Schruefer K, Gebara G, Mathews K, Patruno P, Vaillant Y-L, Cayrefourcq I, Kennard M, Mazure C, Shin K, Liu T-K. Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility Ieee Electron Device Letters. 27: 612-614. DOI: 10.1109/Led.2006.877714 |
0.364 |
|
2006 |
Colinge JP, Floyd L, Quinn AJ, Redmond G, Alderman JC, Xiong W, Cleavelin CR, Schulz T, Schruefer K, Knoblinger G, Patruno P. Temperature effects on trigate SOI MOSFETs Ieee Electron Device Letters. 27: 172-174. DOI: 10.1109/Led.2006.869941 |
0.6 |
|
2006 |
Colinge JP, Quinn AJ, Floyd L, Redmond G, Alderman JC, Xiong W, Cleavelin CR, Schulz T, Schruefer K, Knoblinger G, Patruno P. Low-temperature electron mobility in trigate SOI MOSFETs Ieee Electron Device Letters. 27: 120-122. DOI: 10.1109/Led.2005.862691 |
0.567 |
|
2005 |
Xiong W, Rinn Cleavelin C, Wise R, Yu S, Pas M, Zaman RJ, Gostkowski M, Matthews K, Maleville C, Patruno P, King TJ, Colinge JP. Full/partial depletion effects in FinFETs Electronics Letters. 41: 504-506. DOI: 10.1049/El:20050281 |
0.633 |
|
2004 |
Frei J, Johns C, Vazquez A, Xiong W, Cleavelin CR, Schulz T, Chaudhary N, Gebara G, Zaman JR, Gostkowski M, Matthews K, Colinge JP. Body effect in tri- and pi-gate SOI MOSFETs Ieee Electron Device Letters. 25: 813-815. DOI: 10.1109/Led.2004.839223 |
0.643 |
|
2004 |
Xiong W, Gebara G, Zaman J, Gostkowski M, Nguyen B, Smith G, Lewis D, Cleavelin CR, Wise R, Yu S, Pas M, King TJ, Colinge JP. Improvement of FinFET electrical characteristics by hydrogen annealing Ieee Electron Device Letters. 25: 541-543. DOI: 10.1109/Led.2004.832787 |
0.568 |
|
1999 |
Xiong W, Colinge JP. Self-aligned implanted ground-plane fully depleted SOI MOSFET Electronics Letters. 35: 2059-2060. DOI: 10.1049/El:19991390 |
0.592 |
|
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