| Year |
Citation |
Score |
| 2017 |
Chen X, Gabor A, Samudrala P, Meyers S, Hosler E, Johnson R, Felix N. Mix-and-match considerations for EUV insertion in N7 HVM Proceedings of Spie. 10143. DOI: 10.1117/12.2258674 |
0.435 |
|
| 2017 |
Chen X, Turley C, Rankin J, Brunner T, Gabor A. Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production Proceedings of Spie. 10143. DOI: 10.1117/12.2258642 |
0.391 |
|
| 2010 |
Gabor A, Liegl B, Pike M, Hwang E, Wiltshire T. The GridMapper challenge: How to integrate into manufacturing for reduced overlay error Proceedings of Spie - the International Society For Optical Engineering. 7640. DOI: 10.1117/12.849225 |
0.398 |
|
| 2008 |
Standaert T, Gabor A, Simon A, Lisi A, Peters C, Child C, Kioussis D, Engbrecht E, Chen F, Baumann F, Lembach G, Wendt H, Choi J, Linville J, Chanda K, et al. From Process Assumptions to Development to Manufacturing Mrs Proceedings. 1079. DOI: 10.1557/Proc-1079-N02-01 |
0.368 |
|
| 2008 |
Liegl B, Gabor A, Brodsky C, Cotte J, Krishnan M. Measuring layer-specific depth-of-focus requirements Proceedings of Spie - the International Society For Optical Engineering. 6924. DOI: 10.1117/12.773382 |
0.328 |
|
| 2008 |
Sarma C, Gabor A, Halle S, Haffner H, Herold K, Tsou L, Wang H, Zhuang H. Double exposure double etch for dense SRAM: A designer's dream Proceedings of Spie - the International Society For Optical Engineering. 6924. DOI: 10.1117/12.772985 |
0.362 |
|
| 2000 |
Croffie E, Yuan L, Cheng M, Neureuther A, Houlihan F, Cirelli R, Watson P, Nalamasu O, Gabor A. Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3340-3344. DOI: 10.1116/1.1324636 |
0.304 |
|
| 2000 |
Croffie E, Cheng M, Neureuther A, Cirelli R, Houlihan F, Sweeney J, Watson P, Nalamasu O, Rushkin I, Dimov O, Gabor A. Overview of the STORM program application to 193nm single layer resists Microelectronic Engineering. 53: 437-442. DOI: 10.1016/S0167-9317(00)00351-8 |
0.358 |
|
| 2000 |
Cirelli RA, Bude J, Houlihan F, Gabor A, Watson GP, Weber GR, Klemens FP, Sweeney J, Mansfield WM, Nalamasu O. Probing the limits of optical lithography: the fabrication of sub-100nm devices with 193nm wavelength lithography Microelectronic Engineering. 53: 87-90. DOI: 10.1016/S0167-9317(00)00270-7 |
0.31 |
|
| 1998 |
Goethals AM, Pollers I, Roey Fv, Sugihara T, Ronse K, Driessche Vv, Tzviatkov P, Medina A, Gabor A, Blakeney A, Steinhausler T, Biafore J, Slater S, Nalamasu O, Houlihan F, et al. Lithographic performance of 193nm single and bi-layer materials Journal of Photopolymer Science and Technology. 11: 513-523. DOI: 10.2494/Photopolymer.11.513 |
0.337 |
|
| 1998 |
Nalamasu O, Houlihan FM, Cirelli RA, Timko AG, Watson GP, Hutton RS, Kometani JM, Reichmanis E, Gabor A, Medina A, Slater S. 193 nm single layer resist strategies, concepts, and recent results Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3716-3721. DOI: 10.1116/1.590396 |
0.38 |
|
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