Michael J. Canonico, Ph.D.
Affiliations: | Arizona State University, Tempe, AZ, United States |
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semiconductorsGoogle:
"Michael Canonico"Mean distance: 17.53
Parents
Sign in to add mentorJosé Menéndez | grad student | 2009 | Arizona State | |
(Anharmonic effects on Raman -active phonons.) |
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Publications
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Chléirigh CN, Wang X, Rimple G, et al. (2008) Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing Journal of Applied Physics. 103: 104501 |
Roucka R, D'Costa VR, An YJ, et al. (2008) Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442 |
Gomez L, Canonico M, Kim M, et al. (2008) Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator Journal of Electronic Materials. 37: 240-244 |
Park K, Canonico M, Celler GK, et al. (2007) Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator Journal of Applied Physics. 102 |
Hashemi P, Gomez L, Hoyt JL, et al. (2007) Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained- Si heterostructures on insulator Applied Physics Letters. 91 |
Xia G(, Hoyt JL, Canonico M. (2007) Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 101: 44901 |
D'Costa VR, Cook CS, Birdwell AG, et al. (2006) Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73 |
Xia G, Olubuyide OO, Hoyt JL, et al. (2006) Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates Applied Physics Letters. 88: 13507 |
Cook CS, Daly T, Liu R, et al. (2004) Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films. 455: 794-797 |
Liu R, Canonico M. (2004) Applications of UV-Raman spectroscopy and high-resolution X-ray diffraction to microelectronic materials and devices Microelectronic Engineering. 75: 243-251 |