Xuebin Li, Ph.D.
Affiliations: | 2008 | Georgia Institute of Technology, Atlanta, GA |
Area:
Nanoscience and NanotechnologyGoogle:
"Xuebin Li"Mean distance: 13.91 | S | N | B | C | P |
Parents
Sign in to add mentorWalter A. de Heer | grad student | 2008 | Georgia Tech | |
(Epitaxial graphene films on silicon carbide: Growth, characterization, and devices.) |
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Publications
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Weinrich ZN, Li X, Sharma S, et al. (2019) Dopant-defect interactions in highly doped epitaxial Si:P thin films Thin Solid Films. 685: 1-7 |
de Heer WA, Berger C, Ruan M, et al. (2011) Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide. Proceedings of the National Academy of Sciences of the United States of America. 108: 16900-5 |
Li X, Wu X, Sprinkle M, et al. (2010) Top- and side-gated epitaxial graphene field effect transistors Physica Status Solidi (a) Applications and Materials Science. 207: 286-290 |
Sun D, Wu ZK, Divin C, et al. (2009) Ultrafast dynamics and interlayer thermal coupling of hot carriers in epitaxial graphene Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 470-473 |
Sun D, Wu ZK, Divin C, et al. (2008) Ultrafast relaxation of excited Dirac fermions in epitaxial graphene using optical differential transmission spectroscopy. Physical Review Letters. 101: 157402 |
Wu X, Sprinkle M, Li X, et al. (2008) Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics. Physical Review Letters. 101: 026801 |
Berger C, Wu X, First PN, et al. (2008) Dirac particles in epitaxial graphene films grown on SiC Advances in Solid State Physics. 47: 145-157 |
Varchon F, Feng R, Hass J, et al. (2007) Electronic structure of epitaxial graphene layers on SiC: effect of the substrate. Physical Review Letters. 99: 126805 |
Wu X, Li X, Song Z, et al. (2007) Weak antilocalization in epitaxial graphene: evidence for chiral electrons. Physical Review Letters. 98: 136801 |
Berger C, Wu X, Li X, et al. (2007) Nanopatterned epitaxial graphene for nanoelectronics The Japan Society of Applied Physics. 2007: 214-215 |