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Choudhury J. Praharaj, Ph.D.

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Choudhury Praharaj"
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Parents

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Lester F. Eastman grad student 2004 Cornell
 (A study of aluminium gallium nitride /gallium nitride polarization barriers, aluminium gallium nitride /silicon carbide heterojunction bipolar transistors and polarization-based ohmic contacts.)

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Publications

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Praharaj CJ, Eastman LF. (2009) Modeling of hole tunneling in polarization-based contacts to wurtzite p-type gallium nitride using thin indium gallium nitride caps Device Research Conference - Conference Digest, Drc. 63-64
Praharaj C. (2008) Spontaneous and piezoelectric polarization effects on the frequency response of wurtzite aluminium gallium nitride / silicon carbide heterojunction bipolar transistors Materials Research Society Symposium Proceedings. 1069: 263-268
Schaff WJ, Wu H, Praharaj CJ, et al. (2000) GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264
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