Lester F. Eastman, Ph.D.
Affiliations: | 1953-1957 | Electrical and Computer Engineering | Cornell University, Ithaca, NY, United States |
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistorsWebsite:
http://people.ece.cornell.edu/eastman/Google:
"Lester Eastman"Bio:
( 1928 - 2013)
http://www.nap.edu/read/21785/chapter/21
http://www.news.cornell.edu/stories/2013/08/emeritus-professor-lester-eastman-dies-85
http://library.nd.edu/physics/resources/genealogy/physics/documents/EastmanLF.pdf
Mean distance: 14.62 | S | N | B | C | P |
Parents
Sign in to add mentorG. Conrad Dalman | grad student | 1957 | Cornell | |
(An analysis of the effects of radial electron motions in linear beam tubes.) |
Children
Sign in to add traineeDonald MacLean Kerr | grad student | 1966 | Cornell |
Hadis Morkoç | grad student | 1973-1976 | Cornell (E-Tree) |
James D. Oliver | grad student | 1980 | Cornell |
Michael G Spencer | grad student | 1980 | Cornell |
Sandip Tiwari | grad student | 1980 | Cornell |
Gary W. Wicks | grad student | 1981 | Cornell (E-Tree) |
Wen I. Wang | grad student | 1982 | Cornell (E-Tree) |
Jerry M. Woodall | grad student | 1982 | Cornell (E-Tree) |
James R. Shealy | grad student | 1983 | Cornell (E-Tree) |
Umesh Mishra | grad student | 1984 | Cornell (E-Tree) |
April Brown | grad student | 1985 | Cornell (E-Tree) |
Leda Lunardi | grad student | 1985 | Cornell (E-Tree) |
Jane Guizhen Zhu | grad student | 1991 | Cornell |
Luke F. Lester | grad student | 1992 | Cornell |
Kenneth K. Chu | grad student | 2000 | Cornell |
Joseph Greenberg | grad student | 2000 | Cornell |
Michael J. Murphy | grad student | 2000 | Cornell |
Bruce M. Green | grad student | 2001 | Cornell |
Hock H. Yeo | grad student | 2001 | Cornell |
Vinayak Tilak | grad student | 2002 | Cornell |
Hyungtak Kim | grad student | 2003 | Cornell |
Hai Lu | grad student | 2003 | Cornell |
Hong Wu | grad student | 2003 | Cornell |
Jeonghyun Hwang | grad student | 2004 | Cornell |
Choudhury J. Praharaj | grad student | 2004 | Cornell |
Alexei V. Vertiatchikh | grad student | 2004 | Cornell |
Yunju Sun | grad student | 2006 | Cornell |
Amit Pharkya | grad student | 2008 | Cornell |
Barbaros Aslan | grad student | 2010 | Cornell |
Jonathan G. Felbinger | grad student | 2010 | Cornell |
Junxia Shi | grad student | 2010 | Cornell |
Kristopher D. Matthews | grad student | 2011 | Cornell |
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Publications
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Ardaravi?ius L, Liberis J, Šermukšnis E, et al. (2013) High frequency noise of epitaxial graphene grown on sapphire Physica Status Solidi - Rapid Research Letters. 7: 348-351 |
Hadi WA, Shur M, Eastman LF, et al. (2011) Steady-state and transient electron transport in ZnO: Recent progress Materials Research Society Symposium Proceedings. 1327: 1-6 |
Diduck Q, Walsh I, Babi D, et al. (2011) Novel high temperature annealed Schottky metal for GaN devices International Journal of High Speed Electronics and Systems. 20: 417-422 |
Felbinger JG, Fagerlind M, Axelsson O, et al. (2011) Fabrication and characterization of thin-barrier Al0.5Ga 0.5N/AlN/GaN} HEMTs Ieee Electron Device Letters. 32: 889-891 |
Shi J, Eastman LF. (2011) Correlation between AlGaN/GaN MISHFET performance and HfO2 insulation layer quality Ieee Electron Device Letters. 32: 312-314 |
Schöche S, Shi J, Boosalis A, et al. (2011) Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 98 |
Aslan B, Eastman LF. (2011) A THz-range planar NDR device utilizing ballistic electron acceleration in GaN Solid-State Electronics. 64: 57-62 |
Matthews KD, Chen X, Hao D, et al. (2010) GaN photovoltaic leakage current and correlation to grain size Journal of Applied Physics. 108 |
O'Leary SK, Foutz BE, Shur MS, et al. (2010) Steady-state and transient electron transport within bulk wurtzite zinc oxide Solid State Communications. 150: 2182-2185 |
O'Leary SK, Foutz BE, Shur MS, et al. (2010) The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: An updated Monte Carlo analysis Journal of Materials Science: Materials in Electronics. 21: 218-230 |