Lester F. Eastman, Ph.D.

1953-1957 Electrical and Computer Engineering Cornell University, Ithaca, NY, United States 
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
"Lester Eastman"

( 1928 - 2013)

Mean distance: 14.62


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G. Conrad Dalman grad student 1957 Cornell
 (An analysis of the effects of radial electron motions in linear beam tubes.)


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Donald MacLean Kerr grad student 1966 Cornell
Hadis Morkoç grad student 1973-1976 Cornell (E-Tree)
James D. Oliver grad student 1980 Cornell
Michael G Spencer grad student 1980 Cornell
Sandip Tiwari grad student 1980 Cornell
Gary W. Wicks grad student 1981 Cornell (E-Tree)
Wen I. Wang grad student 1982 Cornell (E-Tree)
Jerry M. Woodall grad student 1982 Cornell (E-Tree)
James R. Shealy grad student 1983 Cornell (E-Tree)
Umesh Mishra grad student 1984 Cornell (E-Tree)
April Brown grad student 1985 Cornell (E-Tree)
Leda Lunardi grad student 1985 Cornell (E-Tree)
Jane Guizhen Zhu grad student 1991 Cornell
Luke F. Lester grad student 1992 Cornell
Kenneth K. Chu grad student 2000 Cornell
Joseph Greenberg grad student 2000 Cornell
Michael J. Murphy grad student 2000 Cornell
Bruce M. Green grad student 2001 Cornell
Hock H. Yeo grad student 2001 Cornell
Vinayak Tilak grad student 2002 Cornell
Hyungtak Kim grad student 2003 Cornell
Hai Lu grad student 2003 Cornell
Hong Wu grad student 2003 Cornell
Jeonghyun Hwang grad student 2004 Cornell
Choudhury J. Praharaj grad student 2004 Cornell
Alexei V. Vertiatchikh grad student 2004 Cornell
Yunju Sun grad student 2006 Cornell
Amit Pharkya grad student 2008 Cornell
Barbaros Aslan grad student 2010 Cornell
Jonathan G. Felbinger grad student 2010 Cornell
Junxia Shi grad student 2010 Cornell
Kristopher D. Matthews grad student 2011 Cornell
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Ardaravi?ius L, Liberis J, Šermukšnis E, et al. (2013) High frequency noise of epitaxial graphene grown on sapphire Physica Status Solidi - Rapid Research Letters. 7: 348-351
Hadi WA, Shur M, Eastman LF, et al. (2011) Steady-state and transient electron transport in ZnO: Recent progress Materials Research Society Symposium Proceedings. 1327: 1-6
Diduck Q, Walsh I, Babi D, et al. (2011) Novel high temperature annealed Schottky metal for GaN devices International Journal of High Speed Electronics and Systems. 20: 417-422
Felbinger JG, Fagerlind M, Axelsson O, et al. (2011) Fabrication and characterization of thin-barrier Al0.5Ga 0.5N/AlN/GaN} HEMTs Ieee Electron Device Letters. 32: 889-891
Shi J, Eastman LF. (2011) Correlation between AlGaN/GaN MISHFET performance and HfO2 insulation layer quality Ieee Electron Device Letters. 32: 312-314
Schöche S, Shi J, Boosalis A, et al. (2011) Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 98
Aslan B, Eastman LF. (2011) A THz-range planar NDR device utilizing ballistic electron acceleration in GaN Solid-State Electronics. 64: 57-62
Matthews KD, Chen X, Hao D, et al. (2010) GaN photovoltaic leakage current and correlation to grain size Journal of Applied Physics. 108
O'Leary SK, Foutz BE, Shur MS, et al. (2010) Steady-state and transient electron transport within bulk wurtzite zinc oxide Solid State Communications. 150: 2182-2185
O'Leary SK, Foutz BE, Shur MS, et al. (2010) The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: An updated Monte Carlo analysis Journal of Materials Science: Materials in Electronics. 21: 218-230
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