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Jonathan G. Felbinger, Ph.D.

Affiliations: 
2010 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Jonathan Felbinger"
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Lester F. Eastman grad student 2010 Cornell
 (Design, fabrication and characterization of gallium nitride high -electron -mobility transistors.)

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Ejeckam F, Francis D, Faili F, et al. (2014) S2-T1: GaN-on-diamond: A brief history Lester Eastman Conference 2014 - High Performance Devices, Lec 2014
Via GD, Felbinger JG, Blevins J, et al. (2014) Wafer-scale GaN HEMT performance enhancement by diamond substrate integration Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 871-874
Felbinger JG, Fagerlind M, Axelsson O, et al. (2011) Fabrication and characterization of thin-barrier Al0.5Ga 0.5N/AlN/GaN} HEMTs Ieee Electron Device Letters. 32: 889-891
Zirath H, Szhau L, Kuylenstierna D, et al. (2011) An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic
Babi? DI, Diduck Q, Yenigalla P, et al. (2010) GaN-on-diamond field-effect transistors: From wafers to amplifier modules Mipro 2010 - 33rd International Convention On Information and Communication Technology, Electronics and Microelectronics, Proceedings. 60-66
Diduck Q, Felbinger J, Eastman LF, et al. (2009) Frequency performance enhancement of AlGaN/GaN HEMTs on diamond Electronics Letters. 45: 758-759
Felbinger JG, Chandra MVS, Sun Y, et al. (2007) Comparison of GaN HEMTs on diamond and SiC substrates Ieee Electron Device Letters. 28: 948-950
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