Barbaros Aslan, Ph.D.
Affiliations: | 2010 | Cornell University, Ithaca, NY, United States |
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistorsGoogle:
"Barbaros Aslan"Mean distance: 16.2
Parents
Sign in to add mentor| Lester F. Eastman | grad student | 2010 | Cornell | |
| (Development of gallium nitride based ballistic electron acceleration negative differential conductivity diodes for terahertz power generation: Thermal and electrical modeling, simulation, processing and characterization.) | ||||
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Publications
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| Aslan B, Eastman LF. (2011) A THz-range planar NDR device utilizing ballistic electron acceleration in GaN Solid-State Electronics. 64: 57-62 |
| Aslan B, Eastman LF, Diduck Q. (2009) Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation International Journal of High Speed Electronics and Systems. 19: 1-6 |
| Aslan B, Eastman LF, Schaff WJ, et al. (2007) Ballistic electron acceleration negative-differantial-conductivity devices International Journal of High Speed Electronics and Systems. 17: 173-176 |
| Dyson A, Ridley BK, Aslan B, et al. (2007) GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530 |
| Dyson A, Ridley BK, Aslan B, et al. (2007) GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530 |