Yuriy V. Shusterman, Ph.D.
Affiliations: | 2001 | Rensselaer Polytechnic Institute, Troy, NY, United States |
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"Yuriy Shusterman"Mean distance: 15.43 | S | N | B | C | P |
Parents
Sign in to add mentor| Leo J. Schowalter | grad student | 2001 | RPI | |
| (Electron transport in epitaxial metal films studied by ballistic electron emission microscopy and the resisitivity measurements.) | ||||
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Publications
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| Shusterman YV, Yakovlev NL, Dovidenko K, et al. (2003) Growth and structure of epitaxial Al and Cu films on CaF2 Thin Solid Films. 443: 23-27 |
| Schujman SB, Vajtai R, Shusterman Y, et al. (2002) AFM-based surface potential measurements on carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 377-382 |
| Shusterman YV, Yakovlev NL, Dovidenko K, et al. (2001) Epitaxial Al and Cu films grown on CaF2/Si(111) Materials Research Society Symposium - Proceedings. 648: P11381-P11386 |
| Shusterman YV, Yakovlev NL, Schowalter LJ. (2001) Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1) Applied Surface Science. 175: 27-32 |
| Schowalter LJ, Rojo JC, Yakolev N, et al. (2000) Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676 |
| Schowalter LJ, Rojo JC, Slack GA, et al. (2000) Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates Journal of Crystal Growth. 211: 78-81 |
| Schowalter LJ, Rojo JC, Yakolev N, et al. (2000) Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676 |
| Schowalter LJ, Shusterman Y, Wang R, et al. (1999) Epitaxial growth of hi-nitride layers on aluminum nitride substrates Materials Research Society Symposium - Proceedings. 537: G3.76 |
| Kaveev AK, Kyutt RN, Moisseeva MM, et al. (1999) Molecular beam epitaxy and characterization of CdF2 layers on CaF2(1 1 1) Journal of Crystal Growth. 201: 1105-1108 |
| Schowalter LJ, Shusterman Y, Wang R, et al. (1999) Epitaxial growth of III-Nitride layers on aluminum nitride substrates Mrs Internet Journal of Nitride Semiconductor Research. 4: 6d |