Marek Skowronski

Affiliations: 
Carnegie Mellon University, Pittsburgh, PA 
Area:
Materials Science Engineering, Condensed Matter Physics
Google:
"Marek Skowronski"
Mean distance: (not calculated yet)
 
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Ma Y, Cullen DA, Goodwill JM, et al. (2020) Exchange of ions across TiN/TaOx interface during electro-formation of TaOx-based resistive switching devices. Acs Applied Materials & Interfaces
Xu Q, Ma Y, Skowronski M. (2020) Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices Journal of Applied Physics. 127: 55107
Ma Y, Li D, Herzing AA, et al. (2018) Formation of the Conducting Filament in TaOx Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation. Acs Applied Materials & Interfaces
Yan W, Sitaputra W, Skowronski M, et al. (2017) Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces Journal of Applied Physics. 122: 124305
Kwon J, Sharma AA, Chen CM, et al. (2016) Transient thermometry and HRTEM analysis of filamentary resistive switches. Acs Applied Materials & Interfaces
Kamaladasa RJ, Sharma AA, Lai YT, et al. (2015) In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO₂. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 21: 140-53
Sitaputra W, Skowronski M, Feenstra RM. (2015) Topographic and electronic structure of cleaved SrTiO3(001) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33
Sitaputra W, Sivadas N, Skowronski M, et al. (2015) Oxygen vacancies on SrO-terminated SrTi O3(001) surfaces studied by scanning tunneling spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91
Abadier M, Song H, Sudarshan TS, et al. (2015) Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth Journal of Crystal Growth. 418: 7-14
Kwon J, Sharma AA, Bain JA, et al. (2015) Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage Advanced Functional Materials. 25: 2876-2883
See more...