Marek Skowronski
Affiliations: | Carnegie Mellon University, Pittsburgh, PA |
Area:
Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Marek Skowronski"Mean distance: (not calculated yet)
Children
Sign in to add traineeEdward K. Sanchez | grad student | 2001 | Carnegie Mellon |
Seoyong Ha | grad student | 2002 | Carnegie Mellon |
Thomas A. Kuhr | grad student | 2003 | Carnegie Mellon |
SungWook Huh | grad student | 2006 | Carnegie Mellon |
Saurav Nigam | grad student | 2008 | Carnegie Mellon |
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Publications
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Ma Y, Cullen DA, Goodwill JM, et al. (2020) Exchange of ions across TiN/TaOx interface during electro-formation of TaOx-based resistive switching devices. Acs Applied Materials & Interfaces |
Xu Q, Ma Y, Skowronski M. (2020) Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices Journal of Applied Physics. 127: 55107 |
Ma Y, Li D, Herzing AA, et al. (2018) Formation of the Conducting Filament in TaOx Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation. Acs Applied Materials & Interfaces |
Yan W, Sitaputra W, Skowronski M, et al. (2017) Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces Journal of Applied Physics. 122: 124305 |
Kwon J, Sharma AA, Chen CM, et al. (2016) Transient thermometry and HRTEM analysis of filamentary resistive switches. Acs Applied Materials & Interfaces |
Kamaladasa RJ, Sharma AA, Lai YT, et al. (2015) In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO₂. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 21: 140-53 |
Sitaputra W, Skowronski M, Feenstra RM. (2015) Topographic and electronic structure of cleaved SrTiO3(001) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33 |
Sitaputra W, Sivadas N, Skowronski M, et al. (2015) Oxygen vacancies on SrO-terminated SrTi O3(001) surfaces studied by scanning tunneling spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91 |
Abadier M, Song H, Sudarshan TS, et al. (2015) Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth Journal of Crystal Growth. 418: 7-14 |
Kwon J, Sharma AA, Bain JA, et al. (2015) Oxygen vacancy creation, drift, and aggregation in TiO |