Noad A. Shapiro, Ph.D.

2002 University of California, Berkeley, Berkeley, CA, United States 
Materials Science Engineering
"Noad Shapiro"
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Eicke R. Weber grad student 2002 UC Berkeley
 (Radiative transitions in indium gallium nitride quantum-well structures.)
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Shapiro NA, Feick H, Hong W, et al. (2003) Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain Journal of Applied Physics. 94: 4520-4529
Shapiro NA, Feick H, Hong W, et al. (2002) Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures Mrs Proceedings. 722
Kim Y, Shapiro NA, Feick H, et al. (2001) Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Applied Physics Letters. 78: 895-897
Shapiro NA, Feick H, Gardner NF, et al. (2001) Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells Physica Status Solidi B-Basic Solid State Physics. 228: 147-151
Shapiro NA, Perlin P, Kisielowski C, et al. (2000) The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells Mrs Internet Journal of Nitride Semiconductor Research. 5
Kim Y, Subramanya SG, Krueger J, et al. (2000) Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer Mrs Proceedings. 622
Shapiro NA, Kim Y, Feick H, et al. (2000) Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Physical Review B. 62
Krüiger J, Shapiro N, Subramanya S, et al. (1999) The influence of the sapphire substrate on the temperature dependence of the GaN bandgap Mrs Proceedings. 572: 289
Perlin P, Mattos L, Shapiro NA, et al. (1999) Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate Journal of Applied Physics. 85: 2385-2389
Perlin P, Kisielowski C, Mattos L, et al. (1998) The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells Mrs Proceedings. 512: 187
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