Robert D. Armitage, Ph.D.
Affiliations: | 2003 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical EngineeringGoogle:
"Robert Armitage"Mean distance: (not calculated yet)
Parents
Sign in to add mentorEicke R. Weber | grad student | 2003 | UC Berkeley | |
(Electrical, optical, and defect properties of carbon -doped gallium nitride grown by molecular -beam epitaxy.) |
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Publications
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Specht P, Ho JC, Xu X, et al. (2006) Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229 |
Xu X, Specht P, Armitage R, et al. (2005) Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102 |
Xu X, Armitage R, Shinkai S, et al. (2005) Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Applied Physics Letters. 86: 182104 |
Specht P, Ho JC, Xu X, et al. (2005) Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications. 135: 340-344 |
Wu J, Walukiewicz W, Li SX, et al. (2004) Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807 |
Armitage R, Yang Q, Feick H, et al. (2004) Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN Journal of Crystal Growth. 263: 132-142 |
Armitage R, Yang Q, Weber ER. (2003) P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 8 |
Armitage R, Hong W, Yang Q, et al. (2003) Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459 |
Yang Q, Feick H, Armitage R, et al. (2003) Metastability in the excitonic luminescence of electron-irradiated GaN Physica Status Solidi (C). 2712-2715 |
Armitage R, Yang Q, Feick H, et al. (2002) Optical and electrical properties of semi-insulating GaN:C grown by MBE Mrs Proceedings. 743 |