Robert D. Armitage, Ph.D.

Affiliations: 
2003 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical Engineering
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Eicke R. Weber grad student 2003 UC Berkeley
 (Electrical, optical, and defect properties of carbon -doped gallium nitride grown by molecular -beam epitaxy.)
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Publications

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Specht P, Ho JC, Xu X, et al. (2006) Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229
Xu X, Specht P, Armitage R, et al. (2005) Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102
Xu X, Armitage R, Shinkai S, et al. (2005) Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Applied Physics Letters. 86: 182104
Specht P, Ho JC, Xu X, et al. (2005) Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications. 135: 340-344
Wu J, Walukiewicz W, Li SX, et al. (2004) Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807
Armitage R, Yang Q, Feick H, et al. (2004) Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN Journal of Crystal Growth. 263: 132-142
Armitage R, Yang Q, Weber ER. (2003) P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 8
Armitage R, Hong W, Yang Q, et al. (2003) Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459
Yang Q, Feick H, Armitage R, et al. (2003) Metastability in the excitonic luminescence of electron-irradiated GaN Physica Status Solidi (C). 2712-2715
Armitage R, Yang Q, Feick H, et al. (2002) Optical and electrical properties of semi-insulating GaN:C grown by MBE Mrs Proceedings. 743
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