Gary Evans

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1975 California Institute of Technology, Pasadena, CA 
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"Gary Evans"
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Children

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Sandra Selmic grad student 2002 SMU (E-Tree)
Gokhan Ozgur grad student 2006 SMU
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Publications

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Huang J, Evans G, Butler J, et al. (2017) Broadened waveguide laser structures at 780 nm Proceedings of Spie. 10086
Ye J, Liu T, Stroynowski R, et al. (2006) Radiation resistance of single-frequency 1310-nm AlGaInAs-InP grating-outcoupled surface-emitting lasers Ieee Photonics Technology Letters. 18: 148-150
Selmic SR, Wilson SL, Evans G, et al. (2001) High-power single-frequency semiconductor lasers 2001 Ieee Emerging Technologies Symposium On Broadband Communications For the Internet Era, Ets 2001 - Symposium Digest. 48-52
Goldstein B, Evans G, Connolly J, et al. (1988) Efficient AlGaAs channeled‐substrate‐planar distributed feedback laser Applied Physics Letters. 53: 550-552
Evans G, Goldstein B, Butler J. (1987) Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers Ieee Journal of Quantum Electronics. 23: 1900-1908
Butler J, Evans G, Goldstein B. (1987) Analysis and performance of channeled-substrate-planar double-heterojunction lasers with geometrical asymmetries Ieee Journal of Quantum Electronics. 23: 1890-1899
Figueroa L, Holcomb T, Burghard K, et al. (1986) Modeling of the optical characteristics for twin-channel laser (TCL) structures Ieee Journal of Quantum Electronics. 22: 2141-2149
Evans G, Leary J, Wilcox J. (1983) Applications Of Semiconductor Lasers In Space Communications Optical Engineering. 22: 222247
Heflinger D, Kirk J, Cordero R, et al. (1982) Submicron Grating Fabrication On Gaas By Holographic Exposure Optical Engineering. 21: 213537
Garmire E, Evans G, Niesen J. (1981) Longitudinal-mode control in GaAs lasers using a three-mirror active-passive cavity Ieee Journal of Quantum Electronics. 17: 2508-2508
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