Year |
Citation |
Score |
2016 |
Ju B, Li D, Ji X, Liu J, Peng H, Wang S, Liu Y, Hao Y, Yee C, Liang H, Shao Y. Interleukin-21 administration leads to enhanced antigen-specific T cell responses and natural killer cells in HIV-1 vaccinated mice. Cellular Immunology. PMID 27062692 DOI: 10.1016/j.cellimm.2016.03.006 |
0.32 |
|
2016 |
Bi C, Jiang Y, Fu T, Hao Y, Zhu X, Lu Y. Naringin inhibits lipopolysaccharide-induced damage in human umbilical vein endothelial cells via attenuation of inflammation, apoptosis and MAPK pathways. Cytotechnology. PMID 27006302 DOI: 10.1007/s10616-015-9908-3 |
0.32 |
|
2016 |
Vlachopoulos N, Hao Y, Zhang J, Holcombe T, Johansson E, Boschloo G, Hagfeldt A, Grätzel M. Efficient Blue-Colored Solid-State Dye Sensitized Solar Cells: Enhanced Charge Collection By Using In-situ Photo-electrochemically Generated Conducting Polymer Hole Conductor. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. PMID 26919196 DOI: 10.1002/cphc.201600064 |
0.32 |
|
2016 |
Lv XJ, Du YW, Hao YQ, Su ZZ, Zhang L, Zhao LJ, Zhang J. RNA-binding motif protein 5 inhibits the proliferation of cigarette smoke-transformed BEAS-2B cells through cell cycle arrest and apoptosis. Oncology Reports. PMID 26782095 DOI: 10.3892/or.2016.4551 |
0.32 |
|
2016 |
Hao Y, Wang Y, Hu X, Liu X, Liu E, Fan J, Miao H, Sun Q. YBO3: Ce3+, Yb3+ based near-infrared quantum cutting phosphors: Synthesis and application to solar cells Ceramics International. DOI: 10.1016/j.ceramint.2016.02.158 |
0.32 |
|
2016 |
Wang Y, Yang LA, Wang ZZ, Ao JP, Hao Y. The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode Physica Status Solidi (a) Applications and Materials Science. 213: 1252-1258. DOI: 10.1002/pssa.201532703 |
0.32 |
|
2015 |
Li D, Wang Z, Ren L, Zhang J, Feng G, Hong K, Hao Y, Qi Z, Liang H, Shao Y. Study of antibody repertoires to the CD4 binding site of gp120 of a Chinese HIV-1-infected elite neutralizer, using 454 sequencing and single-cell sorting. Archives of Virology. PMID 26671829 DOI: 10.1007/s00705-015-2710-x |
0.32 |
|
2015 |
Huang S, Jiang Q, Wei K, Liu G, Zhang J, Wang X, Zheng Y, Sun B, Zhao C, Liu H, Jin Z, Liu X, Wang H, Liu S, Lu Y, ... ... Hao Y, et al. High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs Technical Digest - International Electron Devices Meeting, Iedm. 2015: 17.4.1-17.4.4. DOI: 10.1109/IEDM.2014.7047071 |
0.32 |
|
2015 |
Huang S, Zhang H, Chen Z, Zhu S, Yu Z, Qian H, Hao Y. A 10-bit 250 MSPS charge-domain pipelined ADC with replica controlled PVT insensitive BCT circuit Journal of Semiconductors. 36. DOI: 10.1088/1674-4926/36/5/055012 |
0.32 |
|
2015 |
Cao YR, Yang Y, Cao C, He WL, Zheng XF, Ma XH, Hao Y. Recovery of PMOSFET NBTI under different conditions Chinese Physics B. 24. DOI: 10.1088/1674-1056/24/9/097304 |
0.32 |
|
2015 |
Zhang J, Yan R, Liu G, Liu H, An B, Nie Y, Hao Y. Impact of charged basal stacking faults on the mobility of two-dimensional electron gas in nonpolar a-plane AlGaN/GaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085007 |
0.32 |
|
2015 |
Jiang RY, Xu SR, Zhang JC, Jiang T, Jiang HQ, Wang ZZ, Fan YX, Hao Y. Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates Chinese Physics Letters. 32. DOI: 10.1088/0256-307X/32/9/098102 |
0.32 |
|
2015 |
Jiang T, Xu SR, Zhang JC, Lin ZY, Jiang RY, Hao Y. Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy Chinese Physics Letters. 32. DOI: 10.1088/0256-307X/32/8/088103 |
0.32 |
|
2015 |
Han G, Zhao B, Liu Y, Wang H, Liu M, Zhang C, Hu S, Hao Y. Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor Superlattices and Microstructures. 88: 90-98. DOI: 10.1016/j.spmi.2015.08.027 |
0.32 |
|
2001 |
Liu H, Hao Y. A unified oxide breakdown model for thin gate MOS devices 2001 6th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2001 - Proceedings. 2: 1002-1005. DOI: 10.1109/ICSICT.2001.982065 |
0.32 |
|
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