Anne S. Verhulst, Ph.D. - Publications

Affiliations: 
2005 Stanford University, Palo Alto, CA 
Area:
AMO Physics, Condensed Matter, Electrical Engineering, Information Sci/Tech, Laser Physics, Nano Sci/Eng, Photonics, Quantum Engineering, Quantum Information, Quantum Many-Body Physics, Quantum Optics, Statistical Physics

79 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Smets Q, Verhulst AS, El Kazzi S, Gundlach D, Richter CA, Mocuta A, Collaert N, Thean AVY, Heyns MM. Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2604860  0.4
2016 Verreck D, Verhulst AS, Van De Put ML, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G. Uniform strain in heterostructure tunnel field-effect transistors Ieee Electron Device Letters. 37: 337-340. DOI: 10.1109/Led.2016.2519681  0.4
2016 Alian A, Franco J, Vandooren A, Mols Y, Verhulst A, Kazzi SE, Rooyackers R, Verreck D, Smets Q, Mocuta A, Collaert N, Lin D, Thean A. Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 2016: 31.7.1-31.7.4. DOI: 10.1109/IEDM.2015.7409811  0.4
2016 Dehaene W, Verhulst AS. New devices for internet of things: A circuit level perspective Technical Digest - International Electron Devices Meeting, Iedm. 2016: 25.5.1-25.5.4. DOI: 10.1109/IEDM.2015.7409766  0.4
2015 Thean AVY, Collaert N, Radu I, Waldron N, Merckling C, Witters L, Loo R, Mitard J, Rooyackers R, Vandooren A, Verhulst A, Veloso A, Yakimets D, Bao TH, Chiappe D, et al. Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics Ecs Transactions. 66: 3-14. DOI: 10.1149/06604.0003ecst  0.4
2015 Verreck D, Van De Put ML, Verhulst AS, Soree B, Magnus W, Dabral A, Thean A, Groeseneken G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301988  0.4
2015 Verhulst AS, Verreck D, Smets Q, Kao KH, Van De Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AVY. Perspective of tunnel-FET for future low-power technology nodes Technical Digest - International Electron Devices Meeting, Iedm. 2015: 30.2.1-30.2.4. DOI: 10.1109/IEDM.2014.7047140  0.4
2015 Smets Q, Verhulst AS, El Kazzi S, Mocuta A, Thean VY, Heyns MM. Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes Device Research Conference - Conference Digest, Drc. 2015: 251-252. DOI: 10.1109/DRC.2015.7175664  0.4
2015 Verreck D, Verhulst AS, Van De Put M, Sorée B, Magnus W, Mocuta A, Collaert N, Thean A, Groeseneken G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors Journal of Applied Physics. 118. DOI: 10.1063/1.4931890  0.4
2015 Smets Q, Verhulst AS, El Kazzi S, Verreck D, Richard O, Bender H, Collaert N, Mocuta A, Thean A, Heyns MM. Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements Applied Physics Letters. 107. DOI: 10.1063/1.4928761  0.4
2015 Collaert N, Alian A, Arimura H, Boccardi G, Eneman G, Franco J, Ivanov T, Lin D, Loo R, Merckling C, Mitard J, Pourghaderi MA, Rooyackers R, Sioncke S, Sun JW, ... ... Verhulst A, et al. Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap Microelectronic Engineering. 132: 218-225. DOI: 10.1016/J.Mee.2014.08.005  0.4
2015 El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions Journal of Crystal Growth. 424: 62-67. DOI: 10.1016/J.Jcrysgro.2015.05.004  0.4
2014 Rooyackers R, Vandooren A, Verhulst AS, Walke AM, Simoen E, Devriendt K, Lo-Corotondo S, Demand M, Bryce G, Loo R, Hikavyy A, Vandeweyer T, Huyghebaert C, Collaert N, Thean AVY. Ge-source vertical tunnel FETs using a novel replacement-source integration scheme Ieee Transactions On Electron Devices. 61: 4032-4039. DOI: 10.1109/Ted.2014.2365142  0.4
2014 Walke AM, Vandooren A, Rooyackers R, Leonelli D, Hikavyy A, Loo R, Verhulst AS, Kao KH, Huyghebaert C, Groeseneken G, Rao VR, Bhuwalka KK, Heyns MM, Collaert N, Thean AVY. Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET Ieee Transactions On Electron Devices. 61: 707-715. DOI: 10.1109/Ted.2014.2299337  0.4
2014 Vandooren A, Walke AM, Verhulst AS, Rooyackers R, Collaert N, Thean AVY. Investigation of the subthreshold swing in vertical tunnel-FETs ysing H2 and D2 anneals Ieee Transactions On Electron Devices. 61: 359-364. DOI: 10.1109/Ted.2013.2294535  0.4
2014 Smets Q, Verhulst AS, Lin DHC, Verreck D, Merckling C, El Kazzi S, Martens K, Raskin JP, Thean VY, Heyns MM. Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization Device Research Conference - Conference Digest, Drc. 63-64. DOI: 10.1109/DRC.2014.6872298  0.4
2014 Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic Applied Physics Letters. 105. DOI: 10.1063/1.4904712  0.4
2014 Kao KH, Verhulst AS, Rooyackers R, Douhard B, Delmotte J, Bender H, Richard O, Vandervorst W, Simoen E, Hikavyy A, Loo R, Arstila K, Collaert N, Thean A, Heyns MM, et al. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors Journal of Applied Physics. 116. DOI: 10.1063/1.4903288  0.4
2014 Smets Q, Verhulst AS, Martens K, Lin HC, El Kazzi S, Verreck D, Simoen E, Collaert N, Thean A, Raskin JP, Heyns MM. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification Applied Physics Letters. 105. DOI: 10.1063/1.4902117  0.4
2014 Verhulst AS, Verreck D, Pourghaderi MA, Van De Put M, Sorée B, Groeseneken G, Collaert N, Thean AVY. Can p-channel tunnel field-effect transistors perform as good as n-channel? Applied Physics Letters. 105. DOI: 10.1063/1.4891348  0.4
2014 Smets Q, Verreck D, Verhulst AS, Rooyackers R, Merckling C, Van De Put M, Simoen E, Vandervorst W, Collaert N, Thean VY, Sorée B, Groeseneken G, Heyns MM. InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Journal of Applied Physics. 115. DOI: 10.1063/1.4875535  0.4
2014 Verreck D, Van De Put M, Sorée B, Verhulst AS, Magnus W, Vandenberghe WG, Collaert N, Thean A, Groeseneken G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4864128  0.4
2014 Kao KH, Verhulst AS, Van De Put M, Vandenberghe WG, Soree B, Magnus W, De Meyer K. Tensile strained Ge tunnel field-effect transistors: K · p material modeling and numerical device simulation Applied Physics Letters. 104. DOI: 10.1063/1.4862806  0.4
2014 Tsigkourakos M, Hantschel T, Simon DK, Nuytten T, Verhulst AS, Douhard B, Vandervorst W. On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films Carbon. 79: 103-112. DOI: 10.1016/J.Carbon.2014.07.048  0.4
2014 Thean AVY, Collaert N, Waldron N, Merckling C, Witters L, Loo R, Mitard J, Rooyackers R, Vandooren A, Verhulst A, Veloso A, Pourghaderi A, Eneman G, Yakimets D, Huynh Bao T, et al. Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality Technical Proceedings of the 2014 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2014. 3: 1-4.  0.4
2013 Kaczer B, Clima S, Tomida K, Govoreanu B, Popovici M, Kim MS, Swerts J, Belmonte A, Wang WC, Afanas'Ev VV, Verhulst AS, Pourtois G, Groeseneken G, Jurczak M. Considerations for further scaling of metal-insulator-metal DRAM capacitors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4767125  0.4
2013 Verreck D, Verhulst AS, Groeseneken G. Split pocket p-n-i-n tunnel field-effect transistors Ulis 2013: the 14th International Conference On Ultimate Integration On Silicon, Incorporating the 'Technology Briefing Day'. 21-24. DOI: 10.1109/ULIS.2013.6523481  0.4
2013 Walke AM, Verhulst AS, Vandooren A, Verreck D, Simoen E, Rao VR, Groeseneken G, Collaert N, Thean AVY. Part I: Impact of field-induced quantum confinement on the subthreshold swing behavior of line TFETs Ieee Transactions On Electron Devices. 60: 4057-4064. DOI: 10.1109/Ted.2013.2287259  0.4
2013 Walke AM, Vandooren A, Kaczer B, Verhulst AS, Rooyackers R, Simoen E, Heyns MM, Rao VR, Groeseneken G, Collaert N, Thean AVY. Part II: Investigation of subthreshold swing in line tunnel FETs using bias stress measurements Ieee Transactions On Electron Devices. 60: 4065-4072. DOI: 10.1109/Ted.2013.2287253  0.4
2013 Verreck D, Verhulst AS, Kao KH, Vandenberghe WG, De Meyer K, Groeseneken G. Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors Ieee Transactions On Electron Devices. 60: 2128-2134. DOI: 10.1109/Ted.2013.2260237  0.4
2013 Kao KH, Verhulst AS, Vandenberghe WG, De Meyer K. Counterdoped pocket thickness optimization of gate-on-source-only tunnel FETs Ieee Transactions On Electron Devices. 60: 6-12. DOI: 10.1109/Ted.2012.2227115  0.4
2013 Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G. Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from Ab initio complex band calculations Ieee Electron Device Letters. 34: 402-404. DOI: 10.1109/Led.2013.2238885  0.4
2013 Rooyackers R, Vandooren A, Verhulst AS, Walke A, Devriendt K, Locorotondo S, Demand M, Bryce G, Loo R, Hikavyy A, Vandeweyer T, Huyghebaert C, Collaert N, Thean A. A new complementary hetero-junction vertical Tunnel-FET integration scheme Technical Digest - International Electron Devices Meeting, Iedm. 4.2.1-4.2.4. DOI: 10.1109/IEDM.2013.6724558  0.4
2013 Schulze A, Verhulst AS, Nazir A, Hantschel T, Eyben P, Vandervorst W. A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications Journal of Applied Physics. 113. DOI: 10.1063/1.4795141  0.4
2013 Schulze A, Florakis A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Vandervorst W. Diameter-dependent boron diffusion in silicon nanowire-based transistors Applied Physics Letters. 102. DOI: 10.1063/1.4790438  0.4
2013 Vandenberghe WG, Verhulst AS, Sorée B, Magnus W, Groeseneken G, Smets Q, Heyns M, Fischetti MV. Figure of merit for and identification of sub-60 mV/decade devices Applied Physics Letters. 102. DOI: 10.1063/1.4773521  0.4
2013 Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Vandervorst W. Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy Ultramicroscopy. 125: 18-23. DOI: 10.1016/J.Ultramic.2012.10.008  0.4
2013 Arstila K, Hantschel T, Schulze A, Vandooren A, Verhulst AS, Rooyackers R, Eyben P, Vandervorst W. Nanoprober-based EBIC measurements for nanowire transistor structures Microelectronic Engineering. 105: 99-102. DOI: 10.1016/J.Mee.2012.08.006  0.4
2012 Kao KH, Verhulst AS, Rooyackers R, Hikavyy A, Simoen E, Arstila K, Douhard B, Loo R, Milenin AP, Tolle J, Dekkers H, Machkaoutsan V, Maes JW, De Meyer K, Collaert N, et al. SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation Ecs Transactions. 50: 965-970. DOI: 10.1149/05009.0965ecst  0.4
2012 Kao KH, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets Ieee Transactions On Electron Devices. 59: 2070-2077. DOI: 10.1109/Ted.2012.2200489  0.4
2012 Kao KH, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K. Direct and indirect band-to-band tunneling in germanium-based TFETs Ieee Transactions On Electron Devices. 59: 292-301. DOI: 10.1109/Ted.2011.2175228  0.4
2012 Vandenberghe WG, Verhulst AS, Kao KH, Meyer KD, Sorée B, Magnus W, Groeseneken G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.4714544  0.4
2012 Kao KH, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, Meyer KD. Modeling the impact of junction angles in tunnel field-effect transistors Solid-State Electronics. 69: 31-37. DOI: 10.1016/J.Sse.2011.10.032  0.4
2011 Claeys C, Leonelli D, Rooyackers R, Vandooren A, Verhulst AS, Heyns MM, Groeseneken G, De Gendt S. Trends and challenges in Si and hetero-junction tunnel field effect transistors Ecs Transactions. 35: 15-26. DOI: 10.1149/1.3570772  0.4
2011 Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G. Silicide Engineering to Boost Si tunnel transistor drive current Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dc05  0.4
2011 Kao FKH, Verhulst AS, Vandenberghe WG, Groeseneken G, De Meyer K. The impact of junction angle on tunnel FETs 2011 12th International Conference On Ultimate Integration On Silicon, Ulis 2011. 80-83. DOI: 10.1109/ULIS.2011.5757957  0.4
2011 Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, Huyghebaert C, De Gendt S, Heyns MM, Groeseneken G. Novel architecture to boost the vertical tunneling in tunnel field effect transistors Proceedings - Ieee International Soi Conference. DOI: 10.1109/SOI.2011.6081704  0.4
2011 Vandenberghe WG, Sorée B, Magnus W, Groeseneken G, Verhulst AS, Fischetti MV. Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 271-274. DOI: 10.1109/SISPAD.2011.6035077  0.4
2011 Heyns M, Alian A, Brammertz G, Caymax M, Chang YC, Chu LK, De Jaeger B, Eneman G, Gencarelli F, Groeseneken G, Hellings G, Hikavyy A, Hoffmann TY, Houssa M, Huyghebaert C, ... ... Verhulst AS, et al. Advancing CMOS beyond the Si roadmap with Ge and III/V devices Technical Digest - International Electron Devices Meeting, Iedm. 13.1.1-13.1.4. DOI: 10.1109/IEDM.2011.6131543  0.4
2011 Vandenberghe WG, Sorée B, Magnus W, Fischetti MV, Verhulst AS, Groeseneken G. Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors Technical Digest - International Electron Devices Meeting, Iedm. 5.3.1-5.3.4. DOI: 10.1109/IEDM.2011.6131493  0.4
2011 Verhulst AS, Vandenberghe WG, Leonelli D, Rooyackers R, Vandooren A, Zhuge J, Kao KH, Sorée B, Magnus W, Fischetti MV, Pourtois G, Huyghebaert C, Huang R, Wang Y, De Meyer K, et al. Si-based tunnel field-effect transistors for low-power nano-electronics Device Research Conference - Conference Digest, Drc. 193-196. DOI: 10.1109/DRC.2011.5994494  0.4
2011 Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Mody J, Nazir A, Leonelli D, Vandervorst W. Observation of diameter dependent carrier distribution in nanowire-based transistors Nanotechnology. 22. DOI: 10.1088/0957-4484/22/18/185701  0.4
2011 Zhuge J, Verhulst AS, Vandenberghe WG, Dehaene W, Huang R, Wang Y, Groeseneken G. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/8/085001  0.4
2011 Verhulst AS, Leonelli D, Rooyackers R, Groeseneken G. Drain voltage dependent analytical model of tunnel field-effect transistors Journal of Applied Physics. 110. DOI: 10.1063/1.3609064  0.4
2010 Schulze A, Hantschel T, Eyben P, Vandooren A, Rooyackers R, Mody J, Verhulst AS, Vandervorst W. Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors using scanning spreading resistance microscopy Materials Research Society Symposium Proceedings. 1258: 59-64. DOI: 10.1557/Proc-1258-P06-02  0.4
2010 Verhulst AS, Vandenberghe WG, Leonelli D, Rooyackers R, Vandooren A, Pourtois G, De Gendt S, Heyns MM, Groeseneken G. Boosting the on-current of Si-based tunnel field-effect transistors Ecs Transactions. 33: 363-372. DOI: 10.1149/1.3487567  0.4
2010 Soree B, Magnus W, Szepieniec M, Vandenberghe W, Verhulst A, Pourtois G, Groeseneken G, De Gendt S, Heyns M. Novel device concepts for nanotechnology: The nanowire pinch-off FET and graphene tunnelFET Ecs Transactions. 28: 15-26. DOI: 10.1149/1.3367932  0.4
2010 Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G. Performance enhancement in multi gate tunneling field effect transistors by scaling the fin-width Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dc10  0.4
2010 Heyns M, Bellenger F, Brammertz G, Caymax M, Cantoro M, De Gendt S, De Jaeger B, Delabie A, Eneman G, Groeseneken G, Hellings G, Houssa M, Iacopi F, Leonelli D, Lin D, ... ... Verhulst A, et al. Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices Proceedings of Spie - the International Society For Optical Engineering. 7640. DOI: 10.1117/12.852587  0.4
2010 Ryan PM, Verhulst AS, Cott D, Romo-Negreira A, Hantschel T, Boland JJ. Optimization of multi-walled carbon nanotube-metal contacts by electrical stressing Nanotechnology. 21. DOI: 10.1088/0957-4484/21/4/045705  0.4
2010 Verhulst AS, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Journal of Applied Physics. 107. DOI: 10.1063/1.3277044  0.4
2010 Heyns M, Bellenger F, Brammertz G, Caymax M, De Gendt S, De Jaeger B, Delabie A, Eneman G, Groeseneken G, Houssa M, Leonelli D, Lin D, Martens K, Merckling C, Meuris M, ... ... Verhulst A, et al. High mobility channel materials and novel devices for scaling of nanoeelectronics beyond the Si roadmap Materials Research Society Symposium Proceedings. 1194: 34-45.  0.4
2009 Iacopi F, Rooyackers R, Loo R, Vanherle W, Milenin A, Arstila K, Verhulst A, Takeuchi S, Bender H, Caymax M, Hantschel T, Vandooren A, Vereecken PM, De Gendt S, Heyns M. Seedless templated growth of hetero-nanostructures for novel microelectronics devices Materials Research Society Symposium Proceedings. 1178: 37-42. DOI: 10.1557/Proc-1178-Aa04-04  0.4
2008 Hantschel T, Ryan P, Palanne S, Richard O, Arstila K, Verhulst AS, Bender H, Ke X, Vandervorst W. Nanoprober-based pick-and-place process for site-specific characterization of individual carbon nanotubes Materials Research Society Symposium Proceedings. 1081: 69-74. DOI: 10.1557/Proc-1081-P17-04  0.4
2008 Negreira AR, Cott DJ, Verhulst AS, Esconjauregui S, Chiodarelli N, Weis JE, Whelan CM, Groeseneken G, Heyns M, De Gendt S, Vereecken PM. Growth and integration of high-density CNT for BEOL interconnects Materials Research Society Symposium Proceedings. 1079: 133-143. DOI: 10.1557/Proc-1079-N06-01  0.4
2008 Verhulst AS, Vandenberghe WG, De Gendt S, Maex K, Groeseneken G. Boosting the on-current of silicon nanowire tunnel-FETs Ieee 2008 Silicon Nanoelectronics Workshop, Snw 2008. DOI: 10.1109/SNW.2008.5418419  0.4
2008 Vandenberghe WG, Verhulst AS, Groeseneken G, Sorée B, Magnus W. Analytical model for point and line tunneling in a tunnel field-effect transistor International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 137-140. DOI: 10.1109/SISPAD.2008.4648256  0.4
2008 Vandenberghe WG, Verhulst AS, Groeseneken G, Sorée B, Magnus W. Analytical model for a tunnel field-effect transistor Proceedings of the Mediterranean Electrotechnical Conference - Melecon. 923-928. DOI: 10.1109/MELCON.2008.4618555  0.4
2008 Verhulst AS, Vandenberghe WG, Maex K, De Gendt S, Heyns MM, Groeseneken G. Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates Ieee Electron Device Letters. 29: 1398-1401. DOI: 10.1109/Led.2008.2007599  0.4
2008 Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G. Boosting the on-current of a n -channel nanowire tunnel field-effect transistor by source material optimization Journal of Applied Physics. 104. DOI: 10.1063/1.2981088  0.4
2007 Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G. Tunnel field-effect transistor without gate-drain overlap Applied Physics Letters. 91. DOI: 10.1063/1.2757593  0.4
2006 Bamal M, List S, Stucchi M, Verhulst AS, Van Hove M, Cartuyvels R, Beyer G, Maex K. Performance comparison of interconnect technology and architecture options for deep submicron technology nodes 2006 International Interconnect Technology Conference, Iitc. 202-204. DOI: 10.1109/IITC.2006.1648688  0.4
2005 Verhulst AS, Rau IG, Yamamoto Y, Itoh KM. Optical pumping of Si29 nuclear spins in bulk silicon at high magnetic field and liquid helium temperature Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235206  0.4
2003 Verhulst AS, Maryenko D, Yamamoto Y, Itoh KM. Double and single peaks in nuclear magnetic resonance spectra of natural and 29Si-enriched single-crystal silicon Physical Review B. 68: 54105. DOI: 10.1103/Physrevb.68.054105  0.4
2003 Verhulst AS, Maryenko D, Yamamoto Y, Itoh KM. Double and single peaks in nuclear magnetic resonance spectra of natural and 29Si-enriched single-crystal silicon Physical Review B - Condensed Matter and Materials Physics. 68: 541051-541056.  0.4
2002 Verhulst AS, Liivak O, Sherwood MH, Chuang IL. A rapid and precise probe for measurement of liquid xenon polarization. Journal of Magnetic Resonance (San Diego, Calif. : 1997). 155: 145-9. PMID 11945044 DOI: 10.1006/Jmre.2002.2515  0.4
2001 Verhulst AS, Liivak O, Sherwood MH, Vieth HM, Chuang IL. Non-thermal nuclear magnetic resonance quantum computing using hyperpolarized xenon Applied Physics Letters. 79: 2480-2482. DOI: 10.1063/1.1409279  0.4
2000 Stephenson R, Verhulst A, De Wolf P, Caymax M, Vandervorst W. Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 405-408. DOI: 10.1116/1.591204  0.4
1998 Stephenson R, Verhulst A, De Wolf P, Caymax M, Vandervorst W. Contrast reversal in scanning capacitance microscopy imaging Applied Physics Letters. 73: 2597-2599. DOI: 10.1063/1.122517  0.4
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