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Monica C. Hansen, Ph.D. - Publications

Affiliations: 
2001 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Hansen M, Fini P, Craven M, Heying B, Speck JS, DenBaars SP. Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN Journal of Crystal Growth. 234: 623-630. DOI: 10.1016/S0022-0248(01)01745-6  0.592
2001 Parish G, Hansen M, Moran B, Keller S, Denbaars SP, Mishra UK. Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 297-300. DOI: 10.1002/1521-396X(200111)188:1<297::Aid-Pssa297>3.0.Co;2-Y  0.549
2001 Hierro A, Hansen M, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN Physica Status Solidi B-Basic Solid State Physics. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::Aid-Pssb937>3.0.Co;2-T  0.376
2001 Hansen M, Chen LF, Speck JS, DenBaars SP. Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes Physica Status Solidi B-Basic Solid State Physics. 228: 353-356. DOI: 10.1002/1521-3951(200111)228:2<353::Aid-Pssb353>3.0.Co;2-Q  0.445
2000 Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, DenBaars SP, Speck JS. Deep levels in n-type Schottky and p+-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5: 922-928. DOI: 10.1557/S1092578300005275  0.334
2000 Hansen M, Fini P, Zhao L, Abare AC, Coldren LA, Speck JS, DenBaars SP. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Applied Physics Letters. 76: 529-531. DOI: 10.1557/S1092578300004014  0.615
2000 Haberer ED, Chen C, Abare A, Hansen M, Denbaars S, Coldren L, Mishra U, Hu EL. Channeling as a mechanism for dry etch damage in GaN Applied Physics Letters. 76: 3941-3943. DOI: 10.1063/1.126828  0.317
2000 Moran B, Hansen M, Craven MD, Speck JS, DenBaars SP. Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates Journal of Crystal Growth. 221: 301-304. DOI: 10.1016/S0022-0248(00)00704-1  0.591
1999 Hierro A, Kwon D, Ringel SA, Hansen M, Mishra UK, Denbaars SP, Speck JS. Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.80  0.371
1999 Kozodoy P, Smorchkova YP, Hansen M, Xing H, DenBaars SP, Mishra UK, Saxler AW, Perrin R, Mitchel WC. Polarization-enhanced Mg doping of AlGaN/GaN superlattices Applied Physics Letters. 75: 2444-2446. DOI: 10.1063/1.125042  0.367
1999 Kozodoy P, Hansen M, DenBaars SP, Mishra UK. Enhanced Mg Doping Efficiency In Al0.2Ga0.8N/Gan Superlattices Applied Physics Letters. 74: 3681-3683. DOI: 10.1063/1.123220  0.39
1999 Abare AC, Hansen M, Speck JS, DenBaars SP, Coldren LA. Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings Electronics Letters. 35: 1559-1560. DOI: 10.1049/El:19991058  0.418
1998 Mack M, Via G, Abare A, Hansen M, Kozodoy P, Keller S, Speck J, Mishra U, Coldren L, DenBaars S. Improvement of GaN-based laser diode facets by FIB polishing Electronics Letters. 34: 1315. DOI: 10.1049/El:19980886  0.421
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