James Stephen Speck - Publications

Affiliations: 
1983-1989 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 

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Year Citation  Score
2020 Chow YC, Lee C, Wong MS, Wu YR, Nakamura S, DenBaars SP, Bowers JE, Speck JS. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805. PMID 32752371 DOI: 10.1364/Oe.399924  0.318
2020 Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, Wong MS, Zhang H, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159. PMID 32680016 DOI: 10.1364/Oe.387561  0.522
2020 Lheureux G, Monavarian M, Anderson R, Decrescent RA, Bellessa J, Symonds C, Schuller JA, Speck JS, Nakamura S, DenBaars SP. Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. Optics Express. 28: 17934-17943. PMID 32679995 DOI: 10.1364/Oe.392546  0.338
2020 Li P, Zhang H, Li H, Iza M, Yao Y, Wong MS, Palmquist N, Speck JS, Nakamura S, DenBaars SP. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712. PMID 32672165 DOI: 10.1364/Oe.394664  0.425
2020 Li H, Li P, Zhang H, Chow YC, Wong MS, Pinna S, Klamkin J, Speck JS, Nakamura S, DenBaars SP. Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575. PMID 32403828 DOI: 10.1364/Oe.384139  0.39
2020 Wong MS, Kearns JA, Lee C, Smith JM, Lynsky C, Lheureux G, Choi H, Kim J, Kim C, Nakamura S, Speck JS, DenBaars SP. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793. PMID 32121793 DOI: 10.1364/Oe.384127  0.384
2020 Bonef B, Reilly CE, Wu F, Nakamura S, DenBaars SP, Keller S, Speck JS. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition Applied Physics Express. 13: 65005. DOI: 10.35848/1882-0786/Ab9167  0.341
2020 Gandrothula S, Kamikawa T, Araki M, Cohen D, Speck JS, Nakamura S, DenBaars SP. An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface Applied Physics Express. 13: 41003. DOI: 10.35848/1882-0786/Ab7Bc9  0.391
2020 Zollner CJ, Almogbel AS, Yao Y, Wang M, Iza M, Speck JS, DenBaars SP, Nakamura S. Superlattice hole injection layers for UV LEDs grown on SiC Optical Materials Express. 10: 2171-2180. DOI: 10.1364/Ome.398146  0.414
2020 Alias E, Samsudin MEA, Ibrahim N, Mughal A, DenBaars SP, Speck J, Nakamura S, Zainal N. Highly efficient InGaN based LED with pre-roughening backside of GaN substrate Optics Express. DOI: 10.1364/Oe.381356  0.356
2020 Alias EA, Samsudin MEA, Ibrahim N, Mughal AJ, Denbaars SP, Speck JS, Nakamura S, Zainal N. Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate Journal of the Optical Society of America B-Optical Physics. 37: 1614-1619. DOI: 10.1364/Josab.381356  0.415
2020 Lynsky C, Alhassan AI, Lheureux G, Bonef B, DenBaars SP, Nakamura S, Wu Y, Weisbuch C, Speck JS. Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054604  0.316
2020 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, Speck JS. Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport Physical Review B. 101: 75305. DOI: 10.1103/Physrevb.101.075305  0.315
2020 Alema F, Zhang Y, Mauze A, Itoh T, Speck JS, Hertog B, Osinsky A. H2O vapor assisted growth of β-Ga2O3 by MOCVD Aip Advances. 10: 85002. DOI: 10.1063/5.0011910  0.427
2020 Qwah KS, Monavarian M, Lheureux G, Wang J, Wu Y-, Speck JS. Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder Applied Physics Letters. 117: 22107. DOI: 10.1063/5.0006291  0.36
2020 Smith JM, Ley R, Wong MS, Baek YH, Kang JH, Kim CH, Gordon MJ, Nakamura S, Speck JS, DenBaars SP. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter Applied Physics Letters. 116: 71102. DOI: 10.1063/1.5144819  0.351
2020 Monavarian M, Xu J, Fireman MN, Nookala N, Wu F, Bonef B, Qwah KS, Young EC, Belkin MA, Speck JS. Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions Applied Physics Letters. 116: 201103. DOI: 10.1063/1.5143785  0.353
2020 Mauze A, Zhang Y, Itoh T, Wu F, Speck JS. Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy Apl Materials. 8: 21104. DOI: 10.1063/1.5135930  0.375
2020 Alema F, Zhang Y, Osinsky A, Orishchin N, Valente N, Mauze A, Speck JS. Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD Apl Materials. 8: 21110. DOI: 10.1063/1.5132752  0.402
2020 Myers DJ, Espenlaub AC, Gelzinyte K, Young EC, Martinelli L, Peretti J, Weisbuch C, Speck JS. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy Applied Physics Letters. 116: 91102. DOI: 10.1063/1.5125605  0.385
2020 SaifAddin BK, Almogbel AS, Zollner CJ, Wu F, Bonef B, Iza M, Nakamura S, DenBaars SP, Speck JS. AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates Acs Photonics. 7: 554-561. DOI: 10.1021/Acsphotonics.9B00600  0.338
2020 Zhang H, Li H, Li P, Song J, Speck JS, Nakamura S, DenBaars SP. Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate Acs Photonics. 7: 1662-1666. DOI: 10.1021/Acsphotonics.0C00766  0.314
2020 Wurm C, Ahmadi E, Wu F, Hatui N, Keller S, Speck J, Mishra U. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763. DOI: 10.1016/J.Ssc.2019.113763  0.472
2020 Khoury M, Li H, Li P, Chow YC, Bonef B, Zhang H, Wong MS, Pinna S, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication Nano Energy. 67: 104236. DOI: 10.1016/J.Nanoen.2019.104236  0.386
2020 Jorgensen KF, Bonef B, Speck JS. High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films Journal of Crystal Growth. 546: 125738. DOI: 10.1016/J.Jcrysgro.2020.125738  0.438
2019 Khoury M, Li H, Zhang H, Bonef B, Wong M, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP. Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces. PMID 31769651 DOI: 10.1021/Acsami.9B17525  0.468
2019 Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/Oe.27.0A1074  0.52
2019 Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/Oe.27.024717  0.493
2019 Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27: 8327-8334. PMID 31052652 DOI: 10.1364/Oe.27.008327  0.415
2019 Seres J, Seres E, Serrat C, Young EC, Speck JS, Schumm T. All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity. Optics Express. 27: 6618-6628. PMID 30876243 DOI: 10.1364/Oe.27.006618  0.306
2019 Wong MS, Lee C, Myers DJ, Hwang D, Kearns JA, Li T, Speck JS, Nakamura S, DenBaars SP. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation Applied Physics Express. 12: 97004. DOI: 10.7567/1882-0786/Ab3949  0.333
2019 Zhang Y, Mauze A, Alema F, Osinsky A, Speck JS. Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3 Applied Physics Express. 12: 44005. DOI: 10.7567/1882-0786/Ab08Ad  0.371
2019 Cramer RC, English J, Bonef B, Speck JS. BBr3 as a boron source in plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 37: 61502. DOI: 10.1116/1.5117240  0.39
2019 Reilly CE, Bonef B, Nakamura S, Speck JS, DenBaars SP, Keller S. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition Semiconductor Science and Technology. 34: 125002. DOI: 10.1088/1361-6641/Ab4B93  0.327
2019 SaifAddin BK, Almogbel A, Zollner CJ, Foronda H, Alyamani A, Albadri A, Iza M, Nakamura S, DenBaars SP, Speck JS. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC Semiconductor Science and Technology. 34: 35007-35007. DOI: 10.1088/1361-6641/Aaf58F  0.406
2019 Alema F, Zhang Y, Osinsky A, Valente N, Mauze A, Itoh T, Speck JS. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 Apl Materials. 7: 121110. DOI: 10.1063/1.5132954  0.412
2019 Farzana E, Mauze A, Varley JB, Blue TE, Speck JS, Arehart AR, Ringel SA. Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121102. DOI: 10.1063/1.5126463  0.347
2019 Smirnov AM, Young EC, Bougrov VE, Speck JS, Romanov AE. Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin Journal of Applied Physics. 126: 245104. DOI: 10.1063/1.5126195  0.327
2019 Sayed I, Bonef B, Liu W, Chan S, Georgieva J, Speck JS, Keller S, Mishra UK. Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN Applied Physics Letters. 115: 172104. DOI: 10.1063/1.5125788  0.406
2019 Zollner CJ, Almogbel A, Yao Y, SaifAddin BK, Wu F, Iza M, DenBaars SP, Speck JS, Nakamura S. Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition Applied Physics Letters. 115: 161101. DOI: 10.1063/1.5123623  0.406
2019 Robertson CA, Qwah KS, Wu Y-, Speck JS. Modeling dislocation-related leakage currents in GaN p-n diodes Journal of Applied Physics. 126: 245705. DOI: 10.1063/1.5123394  0.357
2019 Hilfiker M, Kilic U, Mock A, Darakchieva V, Knight S, Korlacki R, Mauze A, Zhang Y, Speck J, Schubert M. Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1-x)2O3 (x ≤ 0.21) films Applied Physics Letters. 114: 231901. DOI: 10.1063/1.5097780  0.32
2019 Espenlaub AC, Myers DJ, Young EC, Marcinkevičius S, Weisbuch C, Speck JS. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs Journal of Applied Physics. 126: 184502. DOI: 10.1063/1.5096773  0.358
2019 Kudrawiec R, Janicki L, Linhart WM, Mayer MA, Sharp ID, Choi S, Bierwagen O, Speck JS, Walukiewicz W. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN Journal of Applied Physics. 126: 45712. DOI: 10.1063/1.5096528  0.354
2019 Mauze A, Zhang Y, Mates T, Wu F, Speck JS. Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 115: 52102. DOI: 10.1063/1.5096183  0.361
2019 Baj M, Dmowski LH, Kwiatkowski A, Przybytek J, Wang X, Koblmüller G, Gallinat CS, Speck JS. Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples Journal of Applied Physics. 126: 45705. DOI: 10.1063/1.5095523  0.356
2019 Zhang Y, Mauze A, Speck JS. Anisotropic etching of β-Ga2O3 using hot phosphoric acid Applied Physics Letters. 115: 13501. DOI: 10.1063/1.5093188  0.344
2019 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, DenBaars SP, Speck JS. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Applied Physics Letters. 114: 151103. DOI: 10.1063/1.5092585  0.35
2019 Cramer RC, Kyle ECH, Speck JS. Band gap bowing for high In content InAlN films Journal of Applied Physics. 126: 35703. DOI: 10.1063/1.5089671  0.351
2019 Bonef B, Harrington SD, Pennachio DJ, Speck JS, Palmstrøm CJ. Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films Journal of Applied Physics. 125: 205301. DOI: 10.1063/1.5082979  0.328
2019 Alema F, Hertog B, Mukhopadhyay P, Zhang Y, Mauze A, Osinsky A, Schoenfeld WV, Speck JS, Vogt T. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Apl Materials. 7: 022527. DOI: 10.1063/1.5064471  0.378
2019 Zhang Y, Alema F, Mauze A, Koksaldi OS, Miller R, Osinsky A, Speck JS. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Apl Materials. 7: 22506. DOI: 10.1063/1.5058059  0.402
2019 Feneberg M, Lidig C, White ME, Tsai MY, Speck JS, Bierwagen O, Galazka Z, Goldhahn R. Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift Apl Materials. 7: 22508. DOI: 10.1063/1.5054351  0.315
2019 Alreesh MA, Dollen PV, Malkowski TF, Mates T, Albrithen H, DenBaars S, Nakamura S, Speck JS. Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal Journal of Crystal Growth. 508: 50-57. DOI: 10.1016/J.Jcrysgro.2018.12.018  0.31
2019 Fireman MN, L'Heureux G, Wu F, Mates T, Young EC, Speck JS. High germanium doping of GaN films by ammonia molecular beam epitaxy Journal of Crystal Growth. 508: 19-23. DOI: 10.1016/J.Jcrysgro.2018.12.009  0.463
2018 Kuritzky LY, Weisbuch C, Speck JS. Prospects for 100% wall-plug efficient III-nitride LEDs. Optics Express. 26: 16600-16608. PMID 30119487 DOI: 10.1364/Oe.26.016600  0.344
2018 Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express. 26: 12490-12498. PMID 29801286 DOI: 10.1364/Oe.26.012490  0.407
2018 Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284 DOI: 10.1364/Oe.26.00A219  0.324
2018 Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761 DOI: 10.1364/Oe.26.005591  0.536
2018 Vogt P, Mauze A, Wu F, Bonef B, Speck JS. Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga1− x )2O3/β-Ga2O3 heterostructures Applied Physics Express. 11: 115503. DOI: 10.7567/Apex.11.115503  0.312
2018 Lee S, Forman CA, Lee C, Kearns J, Young EC, Leonard JT, Cohen DA, Speck JS, Nakamura S, DenBaars SP. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition Applied Physics Express. 11: 62703. DOI: 10.7567/Apex.11.062703  0.407
2018 Alhassan AI, Young EC, Alyamani AY, Albadri A, Nakamura S, DenBaars SP, Speck JS. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction Applied Physics Express. 11: 42101. DOI: 10.7567/Apex.11.042101  0.442
2018 Khoury M, Li H, Bonef B, Kuritzky LY, Mughal AJ, Nakamura S, Speck JS, DenBaars SP. Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations Applied Physics Express. 11: 36501. DOI: 10.7567/Apex.11.036501  0.342
2018 Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338  0.742
2018 Hahn W, Lentali J-, Polovodov P, Young N, Nakamura S, Speck J, Weisbuch C, Filoche M, Wu Y-, Piccardo M, Maroun F, Martinelli L, Lassailly Y, Peretti J. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy Physical Review B. 98: 45305. DOI: 10.1103/Physrevb.98.045305  0.312
2018 Borgatti F, Berger JA, Céolin D, Zhou JS, Kas JJ, Guzzo M, McConville CF, Offi F, Panaccione G, Regoutz A, Payne DJ, Rueff J, Bierwagen O, White ME, Speck JS, et al. Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n -doped SnO2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.155102  0.337
2018 Han S, Mauze A, Ahmadi E, Mates T, Oshima Y, Speck JS. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 45001. DOI: 10.1088/1361-6641/Aaae56  0.432
2018 Oshima Y, Ahmadi E, Kaun S, Wu F, Speck JS. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 15013. DOI: 10.1088/1361-6641/Aa9C4D  0.755
2018 Yonkee BP, Young EC, DenBaars SP, Speck JS, Nakamura S. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum Semiconductor Science and Technology. 33: 15015. DOI: 10.1088/1361-6641/Aa972C  0.347
2018 Chen H, Speck JS, Weisbuch C, Wu Y. Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations Applied Physics Letters. 113: 153504. DOI: 10.1063/1.5051081  0.334
2018 Farzana E, Foronda HM, Jackson CM, Razzak T, Zhang Z, Speck JS, Arehart AR, Ringel SA. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies Journal of Applied Physics. 124: 145703. DOI: 10.1063/1.5050949  0.359
2018 Neal AT, Mou S, Rafique S, Zhao H, Ahmadi E, Speck JS, Stevens KT, Blevins JD, Thomson DB, Moser N, Chabak KD, Jessen GH. Donors and deep acceptors in β-Ga2O3 Applied Physics Letters. 113: 062101. DOI: 10.1063/1.5034474  0.359
2018 Myers DJ, Gelžinytė K, Ho WY, Iveland J, Martinelli L, Peretti J, Weisbuch C, Speck JS. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes Journal of Applied Physics. 124: 55703. DOI: 10.1063/1.5030208  0.347
2018 Galiano K, Deitz JI, Carnevale SD, Gleason DA, Paul PK, Zhang Z, McSkimming BM, Speck JS, Ringel SA, Grassman TJ, Arehart AR, Pelz JP. Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride Journal of Applied Physics. 123: 224504. DOI: 10.1063/1.5022806  0.381
2018 Espenlaub AC, Alhassan AI, Nakamura S, Weisbuch C, Speck JS. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes Applied Physics Letters. 112: 141106. DOI: 10.1063/1.5021475  0.365
2018 Farzana E, Ahmadi E, Speck JS, Arehart AR, Ringel SA. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 123: 161410. DOI: 10.1063/1.5010608  0.388
2018 Mounir C, Koslow IL, Wernicke T, Kneissl M, Kuritzky LY, Adamski NL, Oh SH, Pynn CD, DenBaars SP, Nakamura S, Speck JS, Schwarz UT. On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells Journal of Applied Physics. 123: 85705. DOI: 10.1063/1.5008263  0.371
2018 Griffiths S, Pimputkar S, Kearns J, Malkowski TF, Doherty MF, Speck JS, Nakamura S. Growth kinetics of basic ammonothermal gallium nitride crystals Journal of Crystal Growth. 501: 74-80. DOI: 10.1016/J.Jcrysgro.2018.08.028  0.345
2018 Malkowski TF, Speck JS, DenBaars SP, Nakamura S. An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures Journal of Crystal Growth. 499: 85-89. DOI: 10.1016/J.Jcrysgro.2018.07.025  0.341
2018 Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS. Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy” [J. Cryst. Growth 454 (2016) 164–172] Journal of Crystal Growth. 496: 80-80. DOI: 10.1016/J.Jcrysgro.2018.05.017  0.739
2018 Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers Journal of Crystal Growth. 483: 134-139. DOI: 10.1016/J.Jcrysgro.2017.11.027  0.401
2018 Fireman MN, Li H, Keller S, Mishra UK, Speck JS. Growth of N-polar GaN by ammonia molecular beam epitaxy Journal of Crystal Growth. 481: 65-70. DOI: 10.1016/J.Jcrysgro.2017.10.033  0.431
2017 Kuritzky LY, Espenlaub AC, Yonkee BP, Pynn CD, DenBaars SP, Nakamura S, Weisbuch C, Speck JS. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. Optics Express. 25: 30696-30707. PMID 29221097 DOI: 10.1364/Oe.25.030696  0.302
2017 Li H, Khoury M, Bonef B, Alhassan AI, Mughal AJ, Azimah E, Samsudin MEA, De Mierry P, Nakamura S, Speck J, DenBaars SP. Efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes on low defect density (11-22) GaN/sapphire templates. Acs Applied Materials & Interfaces. PMID 28960058 DOI: 10.1021/Acsami.7B11718  0.413
2017 Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239 DOI: 10.1364/Oe.25.017480  0.301
2017 Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. Optics Express. 25: 3841-3849. PMID 28241595 DOI: 10.1364/Oe.25.003841  0.385
2017 Mughal AJ, Young EC, Alhassan AI, Back J, Nakamura S, Speck JS, DenBaars SP. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs Applied Physics Express. 10: 121006. DOI: 10.7567/Apex.10.121006  0.419
2017 Khoury M, Li H, Kuritzky LY, Mughal AJ, DeMierry P, Nakamura S, Speck JS, DenBaars SP. 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire Applied Physics Express. 10: 106501. DOI: 10.7567/Apex.10.106501  0.394
2017 Ahmadi E, Koksaldi OS, Zheng X, Mates T, Oshima Y, Mishra UK, Speck JS. Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 71101. DOI: 10.7567/Apex.10.071101  0.388
2017 Ahmadi E, Koksaldi OS, Kaun SW, Oshima Y, Short DB, Mishra UK, Speck JS. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 41102. DOI: 10.7567/Apex.10.041102  0.765
2017 Shen J, Wickramaratne D, Dreyer CE, Alkauskas A, Young E, Speck JS, Walle CGVd. Calcium as a nonradiative recombination center in InGaN Applied Physics Express. 10: 21001. DOI: 10.7567/Apex.10.021001  0.303
2017 Lee S, Mishkat-Ul-Masabih S, Leonard JT, Feezell DF, Cohen DA, Speck JS, Nakamura S, DenBaars SP. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser Applied Physics Express. 10: 11001. DOI: 10.7567/Apex.10.011001  0.384
2017 Uždavinys TK, Becerra DL, Ivanov R, DenBaars SP, Nakamura S, Speck JS, Marcinkevičius S. Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence Optical Materials Express. 7: 3116-3123. DOI: 10.1364/Ome.7.003116  0.324
2017 Alema F, Hertog B, Osinsky AV, Mukhopadhyay P, Toporkov M, Schoenfeld WV, Ahmadi E, Speck J. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film Proceedings of Spie. 10105. DOI: 10.1117/12.2260824  0.424
2017 Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, Speck JS, Denbaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications Proceedings of Spie. 10104. DOI: 10.1117/12.2251144  0.312
2017 Marcinkevicius S, Uzdavinys TK, Foronda HM, Cohen DE, Speck JS, Weisbuch C. Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2250622  0.321
2017 Cramer RC, Bonef B, English J, Dreyer CE, Walle CGVd, Speck JS. Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 35: 41509. DOI: 10.1116/1.4986185  0.416
2017 Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962  0.732
2017 Moser N, McCandless J, Crespo A, Leedy K, Green A, Neal A, Mou S, Ahmadi E, Speck J, Chabak K, Peixoto N, Jessen G. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Ieee Electron Device Letters. 38: 775-778. DOI: 10.1109/Led.2017.2697359  0.377
2017 Ivanov R, Marcinkevičius S, Mensi MD, Martinez O, Kuritzky LY, Myers DJ, Nakamura S, Speck JS. Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.064033  0.33
2017 Li H, Mazumder B, Bonef B, Keller S, Wienecke S, Speck JS, Denbaars SP, Mishra UK. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 32: 115004. DOI: 10.1088/1361-6641/Aa8B30  0.415
2017 Ahmadi E, Oshima Y, Wu F, Speck JS. Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 32: 35004. DOI: 10.1088/1361-6641/Aa53A7  0.379
2017 Browne DA, Fireman MN, Mazumder B, Kuritzky LY, Wu Y, Speck JS. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition Semiconductor Science and Technology. 32: 25010. DOI: 10.1088/1361-6641/32/2/025010  0.405
2017 Megalini L, Bonef B, Cabinian BC, Zhao H, Taylor A, Speck JS, Bowers JE, Klamkin J. 1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates Applied Physics Letters. 111: 032105. DOI: 10.1063/1.4994318  0.433
2017 Fireman MN, Bonef B, Young EC, Nookala N, Belkin MA, Speck JS. Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy Journal of Applied Physics. 122: 75105. DOI: 10.1063/1.4991417  0.332
2017 Bonef B, Cramer R, Speck JS. Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography Journal of Applied Physics. 121: 225701. DOI: 10.1063/1.4984087  0.309
2017 Fireman MN, Li H, Keller S, Mishra UK, Speck JS. Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy Journal of Applied Physics. 121: 205702. DOI: 10.1063/1.4983767  0.409
2017 Ivanov R, Marcinkevičius S, Uždavinys TK, Kuritzky LY, Nakamura S, Speck JS. Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells Applied Physics Letters. 110: 31109. DOI: 10.1063/1.4974297  0.372
2017 Vurpillot F, Zanuttini D, Parviainen S, Mazumder B, Rolland N, Hatzoglou C, Speck JS. Reconstructing APT Datasets: Challenging the Limits of the Possible Microscopy and Microanalysis. 23: 640-641. DOI: 10.1017/S1431927617003865  0.309
2017 Rigutti L, Bonef B, Speck J, Tang F, Oliver RA. Atom probe tomography of nitride semiconductors Scripta Materialia. 148: 75-81. DOI: 10.1016/J.Scriptamat.2016.12.034  0.35
2017 Foronda HM, Mazumder B, Young EC, Laurent MA, Li Y, DenBaars SP, Speck JS. Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 475: 127-135. DOI: 10.1016/J.Jcrysgro.2017.06.008  0.337
2017 Mughal AJ, Carberry B, Speck JS, Nakamura S, DenBaars SP. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films Journal of Electronic Materials. 46: 1821-1825. DOI: 10.1007/S11664-016-5235-5  0.403
2016 Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express. 24: 22875-22880. PMID 27828354 DOI: 10.1364/Oe.24.022875  0.413
2016 Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634 DOI: 10.1364/Oe.24.020281  0.339
2016 Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754 DOI: 10.1364/Oe.24.017868  0.507
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426 DOI: 10.1364/Ol.41.002608  0.345
2016 Yonkee BP, Young EC, Lee C, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Optics Express. 24: 7816-7822. PMID 27137064 DOI: 10.1364/Oe.24.007816  0.42
2016 Bierwagen O, Rombach J, Speck JS. Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 224006. PMID 26952816 DOI: 10.1088/0953-8984/28/22/224006  0.33
2016 Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/Oe.24.00A215  0.338
2016 Oh SH, Yonkee BP, Cantore M, Farrell RM, Speck JS, Nakamura S, DenBaars SP. Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W Applied Physics Express. 9. DOI: 10.7567/Apex.9.102102  0.39
2016 Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, Nakamura S, Speck JS. Hybrid tunnel junction contacts to III-nitride light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.022102  0.443
2016 Mensi MD, Becerra DL, Ivanov R, Marcinkevičius S, Nakamura S, Denbaars SP, Speck JS. Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells Optical Materials Express. 6: 39-45. DOI: 10.1364/Ome.6.000039  0.327
2016 Kowsz SJ, Pynn CD, Wu F, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission Proceedings of Spie. 9748. DOI: 10.1117/12.2209661  0.369
2016 Leonard JT, Young EC, Yonkee BP, Cohen DA, Shen C, Margalith T, Ng TK, Denbaars SP, Ooi BS, Speck JS, Nakamura S. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748. DOI: 10.1117/12.2206211  0.4
2016 Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178  0.747
2016 Marcinkevičius S, Uždavinys TK, Foronda HM, Cohen DA, Weisbuch C, Speck JS. Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy Physical Review B. 94: 235205. DOI: 10.1103/Physrevb.94.235205  0.306
2016 Foronda HM, Laurent MA, Yonkee B, Keller S, DenBaars SP, Speck JS. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition Semiconductor Science and Technology. 31: 85003. DOI: 10.1088/0268-1242/31/8/085003  0.403
2016 Hogan JE, Kaun SW, Ahmadi E, Oshima Y, Speck JS. Chlorine-based dry etching of β-Ga2O3 Semiconductor Science and Technology. 31: 65006. DOI: 10.1088/0268-1242/31/6/065006  0.727
2016 Young EC, Grandjean N, Mates TE, Speck JS. Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy Applied Physics Letters. 109: 212103. DOI: 10.1063/1.4968586  0.36
2016 Yonkee BP, Young EC, DenBaars SP, Nakamura S, Speck JS. Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction Applied Physics Letters. 109: 191104. DOI: 10.1063/1.4967501  0.411
2016 Foronda HM, Romanov AE, Young EC, Robertson CA, Beltz GE, Speck JS. Publisher's Note: "Curvature and bow of bulk GaN substrates" [J. Appl. Phys. 120, 035104 (2016)] Journal of Applied Physics. 120: 119901. DOI: 10.1063/1.4962817  0.32
2016 Lee C, Zhang C, Becerra DL, Lee S, Forman CA, Oh SH, Farrell RM, Speck JS, Nakamura S, Bowers JE, Denbaars SP. Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz Applied Physics Letters. 109. DOI: 10.1063/1.4962430  0.353
2016 Myzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, Speck JS, Denbaars SP. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes Applied Physics Letters. 109. DOI: 10.1063/1.4960791  0.38
2016 Pynn CD, Kowsz SJ, Oh SH, Gardner H, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy Applied Physics Letters. 109: 41107. DOI: 10.1063/1.4960001  0.412
2016 Foronda HM, Romanov AE, Young EC, Robertson CA, Beltz GE, Speck JS. Curvature and bow of bulk GaN substrates Journal of Applied Physics. 120: 35104-35104. DOI: 10.1063/1.4959073  0.371
2016 Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706  0.762
2016 Zhang Z, Cardwell D, Sasikumar A, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Arehart AR, Ringel SA. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Journal of Applied Physics. 119. DOI: 10.1063/1.4948298  0.36
2016 Becerra DL, Kuritzky LY, Nedy J, Saud Abbas A, Pourhashemi A, Farrell RM, Cohen DA, DenBaars SP, Speck JS, Nakamura S. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes with chemically assisted ion beam etched facets Applied Physics Letters. 108. DOI: 10.1063/1.4943143  0.352
2016 Dreyer CE, Alkauskas A, Lyons JL, Speck JS, Van De Walle CG. Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters Applied Physics Letters. 108. DOI: 10.1063/1.4942674  0.324
2016 Young NG, Farrell RM, Oh S, Cantore M, Wu F, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes Applied Physics Letters. 108. DOI: 10.1063/1.4941815  0.378
2016 Fireman MN, Browne DA, Mishra UK, Speck JS. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4941323  0.446
2016 Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, Speck JS, Denbaars SP, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture Applied Physics Letters. 108. DOI: 10.1063/1.4940380  0.402
2016 Smirnov AM, Young EC, Bougrov VE, Speck JS, Romanov AE. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures Apl Materials. 4. DOI: 10.1063/1.4939907  0.388
2016 Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157  0.46
2016 Mughal AJ, Oh S, Myzaferi A, Nakamura S, Speck JS, DenBaars SP. High-power LEDs using Ga-doped ZnO current-spreading layers Electronics Letters. 52: 304-306. DOI: 10.1049/El.2015.3982  0.431
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/Acsphotonics.5B00599  0.36
2016 Tsai MY, Bierwagen O, Speck JS. Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes Thin Solid Films. 605: 186-192. DOI: 10.1016/J.Tsf.2015.09.022  0.444
2016 Young NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications Journal of Crystal Growth. 455: 105-110. DOI: 10.1016/J.Jcrysgro.2016.09.074  0.441
2016 Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS. High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 454: 164-172. DOI: 10.1016/J.Jcrysgro.2016.08.045  0.765
2016 Griffiths S, Pimputkar S, Speck JS, Nakamura S. On the solubility of gallium nitride in supercritical ammonia–sodium solutions Journal of Crystal Growth. 456: 5-14. DOI: 10.1016/J.Jcrysgro.2016.08.041  0.369
2016 Sintonen S, Kivisaari P, Pimputkar S, Suihkonen S, Schulz T, Speck JS, Nakamura S. Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN Journal of Crystal Growth. 456: 43-50. DOI: 10.1016/J.Jcrysgro.2016.08.040  0.373
2016 Dollen PV, Pimputkar S, Alreesh MA, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes Journal of Crystal Growth. 456: 67-72. DOI: 10.1016/J.Jcrysgro.2016.08.018  0.374
2016 Dollen PV, Pimputkar S, Alreesh MA, Albrithen H, Suihkonen S, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part I: System development Journal of Crystal Growth. 456: 58-66. DOI: 10.1016/J.Jcrysgro.2016.07.044  0.353
2016 Pimputkar S, Speck JS, Nakamura S. Basic ammonothermal GaN growth in molybdenum capsules Journal of Crystal Growth. 456: 15-20. DOI: 10.1016/J.Jcrysgro.2016.07.034  0.363
2016 Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) Physica Status Solidi B-Basic Solid State Physics. 253: 792-792. DOI: 10.1002/Pssb.201670525  0.326
2016 Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades Physica Status Solidi (B) Basic Research. 253: 626-629. DOI: 10.1002/Pssb.201552550  0.406
2015 Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595 DOI: 10.1364/Oe.23.016232  0.321
2015 Megalini L, Kuritzky LY, Leonard JT, Shenoy R, Rose K, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions Applied Physics Express. 8. DOI: 10.7567/Apex.8.066502  0.343
2015 Kuritzky LY, Myers DJ, Nedy J, Kelchner KM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.061002  0.393
2015 Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, Nakamura S, DenBaars SP, Cohen DA. Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture Applied Physics Express. 8. DOI: 10.7567/Apex.8.042701  0.35
2015 Schrimpf RD, Fleetwood DM, Pantelides ST, Puzyrev YS, Mukherjee S, Reed RA, Speck JS, Mishra UK. Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.475  0.331
2015 Kuritzky LY, Speck JS. Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN Mrs Communications. 5: 463-473. DOI: 10.1557/Mrc.2015.53  0.33
2015 Marcinkevičius S, Gelžinyte K, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Spatial variations of optical properties of semipolar InGaN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076973  0.336
2015 McSkimming BM, Chaix C, Speck JS. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 33. DOI: 10.1116/1.4928415  0.434
2015 Kaun SW, Wu F, Speck JS. β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 33: 41508. DOI: 10.1116/1.4922340  0.723
2015 Nedy JG, Young NG, Kelchner KM, Hu Y, Farrell RM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085019  0.387
2015 Yonkee BP, Farrell RM, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of low resistance ohmic contacts to p-type (2021) GaN Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075007  0.372
2015 Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012  0.785
2015 Kaun SW, Mazumder B, Fireman MN, Kyle ECH, Mishra UK, Speck JS. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055010  0.771
2015 Korhonen E, Prozheeva V, Tuomisto F, Bierwagen O, Speck JS, White ME, Galazka Z, Liu H, Izyumskaya N, Avrutin V, Özgür, Morkoç H. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/2/024011  0.362
2015 Marcinkevičius S, Sztein A, Nakamura S, Speck JS. Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/115017  0.375
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.412
2015 Hestroffer K, Wu F, Li H, Lund C, Keller S, Speck JS, Mishra UK. Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105015  0.46
2015 Papadogianni A, White ME, Speck JS, Galazka Z, Bierwagen O. Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films Applied Physics Letters. 107. DOI: 10.1063/1.4938471  0.386
2015 Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, DenBaars SP, Speck JS. Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4936386  0.314
2015 Zhang Z, Farzana E, Sun WY, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Kyle ECH, Speck JS, Arehart AR, Ringel SA. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Journal of Applied Physics. 118. DOI: 10.1063/1.4933174  0.36
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Denbaars SP, Speck JS, Nakamura S. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts Journal of Applied Physics. 118. DOI: 10.1063/1.4931883  0.396
2015 Xue J, Zhao Y, Oh SH, Herrington WF, Speck JS, DenBaars SP, Nakamura S, Ram RJ. Thermally enhanced blue light-emitting diode Applied Physics Letters. 107. DOI: 10.1063/1.4931365  0.331
2015 Kowsz SJ, Pynn CD, Oh SH, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4930304  0.35
2015 Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944  0.4
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365  0.393
2015 Kyle ECH, Kaun SW, Young EC, Speck JS. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN Applied Physics Letters. 106. DOI: 10.1063/1.4922216  0.756
2015 Fireman MN, Browne DA, Mazumder B, Speck JS, Mishra UK. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4921633  0.429
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  0.762
2015 Browne DA, Mazumder B, Wu YR, Speck JS. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH<inf>3</inf> molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4919750  0.419
2015 Piccardo M, Iveland J, Martinelli L, Nakamura S, Choi JW, Speck JS, Weisbuch C, Peretti J. Low-energy electro- and photo-emission spectroscopy of GaN materials and devices Journal of Applied Physics. 117. DOI: 10.1063/1.4913928  0.39
2015 Gelžinyte K, Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, Denbaars SP, Speck JS. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4905854  0.339
2015 Zhang Z, Arehart AR, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4905783  0.353
2015 Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Journal of Crystal Growth. 432: 49-53. DOI: 10.1016/J.Jcrysgro.2015.09.016  0.359
2015 Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202-1) AlGaN/GaN buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.081  0.433
2015 Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62. DOI: 10.1016/J.Jcrysgro.2014.10.032  0.361
2014 Perl EE, McMahon WE, Farrell RM, DenBaars SP, Speck JS, Bowers JE. Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties. Nano Letters. 14: 5960-4. PMID 25238041 DOI: 10.1021/Nl502977F  0.301
2014 Zhao Y, Farrell RM, Wu Y, Speck JS. Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices Japanese Journal of Applied Physics. 53: 100206. DOI: 10.7567/Jjap.53.100206  0.348
2014 Okumura H, Kita M, Sasaki K, Kuramata A, Higashiwaki M, Speck JS. Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy Applied Physics Express. 7: 95501. DOI: 10.7567/Apex.7.095501  0.366
2014 Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/Apex.7.031003  0.4
2014 Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503  0.319
2014 Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020  0.753
2014 Peretti J, Weisbuch C, Iveland J, Piccardo M, Martinelli L, Speck JS. Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs Proceedings of Spie - the International Society For Optical Engineering. 9003. DOI: 10.1117/12.2038698  0.365
2014 Chen J, Zhang EX, Zhang CX, McCurdy MW, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS. RF performance of proton-irradiated AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 61: 2959-2964. DOI: 10.1109/Tns.2014.2362872  0.736
2014 Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927  0.409
2014 Hu Y, Rind E, Speck JS. Antiphase boundaries and rotation domains in In2O3(001) films grown on yttria-stabilized zirconia (001) Journal of Applied Crystallography. 47: 443-448. DOI: 10.1107/S1600576713033864  0.34
2014 Korhonen E, Tuomisto F, Bierwagen O, Speck JS, Galazka Z. Compensating vacancy defects in Sn- and Mg-doped In2O3 Physical Review B. 90: 245307. DOI: 10.1103/Physrevb.90.245307  0.317
2014 Vasheghani Farahani SK, Veal TD, Mudd JJ, Scanlon DO, Watson GW, Bierwagen O, White ME, Speck JS, McConville CF. Valence-band density of states and surface electron accumulation in epitaxial SnO2 films Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.155413  0.385
2014 Piccardo M, Martinelli L, Iveland J, Young N, Denbaars SP, Nakamura S, Speck JS, Weisbuch C, Peretti J. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.235124  0.309
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  0.775
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.405
2014 Hurni CA, Kroemer H, Mishra UK, Speck JS. M-plane (1010) and (2021) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling Applied Physics Letters. 105. DOI: 10.1063/1.4903180  0.743
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  0.779
2014 Mazumder B, Liu X, Yeluri R, Wu F, Mishra UK, Speck JS. Atom probe tomography studies of Al2O3 gate dielectrics on GaN Journal of Applied Physics. 116. DOI: 10.1063/1.4896498  0.42
2014 Yang T, Shivaraman R, Speck JS, Wu Y. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Journal of Applied Physics. 116: 113104. DOI: 10.1063/1.4896103  0.782
2014 Marcinkevičius S, Gelžinyte K, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4896034  0.34
2014 Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, DenBaars SP, Nakamura S, Feezell DF. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] Applied Physics Letters. 105: 89902. DOI: 10.1063/1.4894638  0.306
2014 Iveland J, Piccardo M, Martinelli L, Peretti J, Choi JW, Young N, Nakamura S, Speck JS, Weisbuch C. Origin of electrons emitted into vacuum from InGaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4892473  0.35
2014 Feneberg M, Lidig C, Lange K, Goldhahn R, Neumann MD, Esser N, Bierwagen O, White ME, Tsai MY, Speck JS. Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV Applied Physics Letters. 104. DOI: 10.1063/1.4882237  0.306
2014 Kyle ECH, Kaun SW, Burke PG, Wu F, Wu YR, Speck JS. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115. DOI: 10.1063/1.4874735  0.783
2014 Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512  0.403
2014 Von Wenckstern H, Splith D, Schmidt F, Grundmann M, Bierwagen O, Speck JS. Schottky contacts to In2O3 Apl Materials. 2. DOI: 10.1063/1.4870536  0.376
2014 Watanabe K, Ohsawa T, Sakaguchi I, Bierwagen O, White ME, Tsai MY, Takahashi R, Ross EM, Adachi Y, Speck JS, Haneda H, Ohashi N. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions Applied Physics Letters. 104. DOI: 10.1063/1.4870425  0.321
2014 Marcinkevičius S, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well Applied Physics Letters. 104. DOI: 10.1063/1.4869459  0.354
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  0.827
2014 Okumura H, McSkimming BM, Huault T, Chaix C, Speck JS. Growth diagram of N-face GaN (000 1 ¯ ) grown at high rate by plasma-assisted molecular beam epitaxy Applied Physics Letters. 104: 12111. DOI: 10.1063/1.4861746  0.423
2014 Liu X, Chan SH, Wu F, Li Y, Keller S, Speck JS, Mishra UK. Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity Journal of Crystal Growth. 408: 78-84. DOI: 10.1016/J.Jcrysgro.2014.09.029  0.396
2014 Pimputkar S, Kawabata S, Speck JS, Nakamura S. Improved growth rates and purity of basic ammonothermal GaN Journal of Crystal Growth. 403: 7-17. DOI: 10.1016/J.Jcrysgro.2014.06.017  0.364
2014 Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027  0.398
2014 McSkimming BM, Wu F, Huault T, Chaix C, Speck JS. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h Journal of Crystal Growth. 386: 168-174. DOI: 10.1016/J.Jcrysgro.2013.10.013  0.435
2014 Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/S11664-013-2942-Z  0.335
2014 Woodward N, Enck R, Gallinat CS, Rodak LE, Metcalfe GD, Speck JS, Shen H, Wraback M. Evidence of lateral electric fields in c -plane III-V nitrides via terahertz emission Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 686-689. DOI: 10.1002/Pssc.201300687  0.342
2014 Prozheeva V, Tuomisto F, Koblmüller G, Speck JS, Knübel A, Aidam R. Vacancy defect formation in PA-MBE grown C-doped InN Physica Status Solidi (C). 11: 530-532. DOI: 10.1002/Pssc.201300507  0.337
2014 Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693. DOI: 10.1002/Pssc.201300430  0.373
2014 Bierwagen O, Speck JS. Plasma‐assisted molecular beam epitaxy of Sn‐doped In2O3: Sn incorporation, structural changes, doping limits, and compensation Physica Status Solidi (a). 211: 48-53. DOI: 10.1002/Pssa.201330224  0.402
2014 Feneberg M, Lidig C, Lange K, White ME, Tsai MY, Speck JS, Bierwagen O, Goldhahn R. Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry Physica Status Solidi (a) Applications and Materials Science. 211: 82-86. DOI: 10.1002/Pssa.201330147  0.362
2014 Mogilatenko A, Kirmse H, Bierwagen O, Schmidbauer M, Tsai MY, Häusler I, White ME, Speck JS. Effect of heavy Ga doping on defect structure of SnO2 layers Physica Status Solidi (a) Applications and Materials Science. 211: 87-92. DOI: 10.1002/Pssa.201330145  0.403
2013 Iveland J, Martinelli L, Peretti J, Speck JS, Weisbuch C. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Physical Review Letters. 110: 177406. PMID 23679777 DOI: 10.1103/Physrevlett.110.177406  0.366
2013 Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53  0.345
2013 Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc10  0.407
2013 Bryant BN, Young EC, Wu F, Fujito K, Nakamura S, Speck JS. Basal plane stacking fault suppression by nitrogen carrier gas in m-plane GaN regrowth by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.115502  0.813
2013 Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104  0.36
2013 Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/Apex.6.062102  0.379
2013 Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.052103  0.42
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.746
2013 Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277  0.421
2013 Choi S, Wu F, Bierwagen O, Speck JS. Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 31: 31504. DOI: 10.1116/1.4795811  0.395
2013 Chen J, Puzyrev YS, Zhang CX, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Kaun SW, Kyle ECH, Speck JS. Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 60: 4080-4086. DOI: 10.1109/Tns.2013.2281771  0.742
2013 Hsu PS, Farrell RM, Weaver JJ, Fujito K, Denbaars SP, Speck JS, Nakamura S. Comparison of polished and dry etched semipolar (1122) III-Nitride laser facets Ieee Photonics Technology Letters. 25: 2105-2107. DOI: 10.1109/Lpt.2013.2281608  0.366
2013 Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/Jdt.2012.2227682  0.367
2013 Preissler N, Bierwagen O, Ramu AT, Speck JS. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.085305  0.368
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.394
2013 Kaun SW, Wong MH, Mishra UK, Speck JS. Molecular beam epitaxy for high-performance Ga-face GaN electron devices Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074001  0.773
2013 Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021  0.379
2013 Armstrong AM, Kelchner K, Nakamura S, Denbaars SP, Speck JS. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103. DOI: 10.1063/1.4841575  0.457
2013 Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699  0.434
2013 Shan Hsu P, Wu F, Young EC, Romanov AE, Fujito K, Denbaars SP, Speck JS, Nakamura S. Blue and aquamarine stress-relaxed semipolar (11 2 ̄ 2) laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826087  0.37
2013 Mazumder B, Esposto M, Hung TH, Mates T, Rajan S, Speck JS. Characterization of a dielectric/GaN system using atom probe tomography Applied Physics Letters. 103: 151601. DOI: 10.1063/1.4824211  0.4
2013 Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589  0.348
2013 Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171  0.387
2013 Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093  0.407
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.759
2013 Mazumder B, Kaun SW, Lu J, Keller S, Mishra UK, Speck JS. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4798249  0.761
2013 Zhao Y, Wu F, Huang CY, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, Denbaars SP, Nakamura S. Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization Applied Physics Letters. 102. DOI: 10.1063/1.4794864  0.358
2013 Kaun SW, Wong MH, Lu J, Mishra UK, Speck JS. Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN Electronics Letters. 49: 903-905. DOI: 10.1049/El.2013.1723  0.779
2013 Shivaraman R, Wu Y-, Choi S, Chung R, Speck J. Atom Probe Tomography of III-Nitrides Based Semiconducting Devices Microscopy and Microanalysis. 19: 956-957. DOI: 10.1017/S1431927613006776  0.767
2013 Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, Denbaars SP, Speck JS. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Journal of Crystal Growth. 382: 80-86. DOI: 10.1016/J.Jcrysgro.2013.08.013  0.406
2013 Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Journal of Crystal Growth. 369: 14-20. DOI: 10.1016/J.Jcrysgro.2013.01.031  0.799
2013 Pimputkar S, Kawabata S, Speck JS, Nakamura S. Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane Journal of Crystal Growth. 368: 67-71. DOI: 10.1016/J.Jcrysgro.2013.01.022  0.337
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042  0.34
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, ... ... Speck JS, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/S11664-013-2794-6  0.693
2013 Metcalfe GD, Hirai A, Young EC, Speck JS, Shen H, Wraback M. Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures Physica Status Solidi - Rapid Research Letters. 7: 993-996. DOI: 10.1002/Pssr.201308099  0.779
2012 Bierwagen O, Nagata T, White ME, Tsai M, Speck JS. Electron transport in semiconducting SnO 2 : Intentional bulk donors and acceptors, the interface, and the surface - CORRIGENDUM Journal of Materials Research. 27: 2578-2578. DOI: 10.1557/Jmr.2012.293  0.388
2012 Dasgupta S, Nidhi, Wu F, Speck JS, Mishra UK. Growth and characterization of n-polar GaN films on Si(111) by plasma assisted molecular beam epitaxy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115503  0.453
2012 Lu J, Hu YL, Brown DF, Wu F, Keller S, Speck JS, DenBaars SP, Mishra UK. Charge and mobility enhancements in in-polar InAl(Ga)N/Al(Ga)N/GaN heterojunctions grown by metal-organic chemical vapor deposition using a graded growth strategy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115502  0.401
2012 Choi SB, Bae SY, Lee DS, Kong BH, Cho HK, Song JH, Ahn BJ, Keading JF, Nakamura S, DenBaars SP, Speck JS. Optical characterization of double peak behavior in {101̄1} semipolar light-emitting diodes on miscut m-plane sapphire substrates Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.052101  0.409
2012 Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103  0.367
2012 Pan CC, Tanaka S, Wu F, Zhao Y, Speck JS, Nakamura S, Den Baars SP, Feezel D. High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.062103  0.377
2012 Brinkley SE, Keraly CL, Sonoda J, Weisbuch C, Speck JS, Nakamura S, DenBaars SP. Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.032104  0.31
2012 Browne DA, Young EC, Lang JR, Hurni CA, Speck JS. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4727967  0.824
2012 Wong MH, Singisetti U, Lu J, Speck JS, Mishra UK. Anomalous output conductance in N-polar GaN high electron mobility transistors Ieee Transactions On Electron Devices. 59: 2988-2995. DOI: 10.1109/Ted.2012.2211599  0.373
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963. DOI: 10.1109/Led.2012.2194130  0.366
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796. DOI: 10.1109/Led.2012.2190965  0.354
2012 Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710  0.314
2012 Singisetti U, Wong MH, Speck JS, Mishra UK. Enhancement-mode N-polar GaN MOS-HFET with 5-nm GaN channel, 510-mS/mm g m, and 0.66-Ω • mm R on Ieee Electron Device Letters. 33: 26-28. DOI: 10.1109/Led.2011.2170656  0.344
2012 Vasheghani Farahani SK, Veal TD, Sanchez AM, Bierwagen O, White ME, Gorfman S, Thomas PA, Speck JS, McConville CF. Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.245315  0.413
2012 Bierwagen O, Choi S, Speck JS. Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer Physical Review B. 85: 165205. DOI: 10.1103/Physrevb.85.165205  0.33
2012 Farrell RM, Young EC, Wu F, Denbaars SP, Speck JS. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024001  0.43
2012 Kaun SW, Burke PG, Hoi Wong M, Kyle ECH, Mishra UK, Speck JS. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4773510  0.782
2012 Hardy MT, Nakamura S, Speck JS, Denbaars SP. Suppression of relaxation in (202̄1) InGaN/GaN laser diodes using limited area epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4770367  0.415
2012 Hurni CA, Kroemer H, Mishra UK, Speck JS. Capacitance-voltage profiling on polar III-nitride heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4757940  0.751
2012 Young EC, Wu F, Romanov AE, Haeger DA, Nakamura S, Denbaars SP, Cohen DA, Speck JS. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Applied Physics Letters. 101. DOI: 10.1063/1.4757423  0.399
2012 Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791  0.386
2012 Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693  0.358
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.398
2012 Bierwagen O, Speck JS. Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies Applied Physics Letters. 101: 102107. DOI: 10.1063/1.4751854  0.332
2012 Hurni CA, Lang JR, Burke PG, Speck JS. Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4751108  0.812
2012 Hu YL, Krämer S, Fini PT, Speck JS. Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Applied Physics Letters. 101. DOI: 10.1063/1.4750238  0.351
2012 Wu Y, Shivaraman R, Wang K, Speck JS. Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Applied Physics Letters. 101: 83505. DOI: 10.1063/1.4747532  0.777
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Publisher’s Note: “Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy” [Appl. Phys. Lett. 100, 232102 (2012)] Applied Physics Letters. 101: 49903. DOI: 10.1063/1.4740223  0.783
2012 Kaun SW, Wong MH, Mishra UK, Speck JS. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4730951  0.774
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Applied Physics Letters. 100: 232102. DOI: 10.1063/1.4725482  0.796
2012 Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100  0.343
2012 Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465  0.339
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  0.708
2012 Shan Hsu P, Hardy MT, Young EC, Romanov AE, Denbaars SP, Nakamura S, Speck JS. Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4707160  0.339
2012 Jewell J, Simeonov D, Huang SC, Hu YL, Nakamura S, Speck J, Weisbuch C. Double embedded photonic crystals for extraction of guided light in light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4705735  0.309
2012 Haeger DA, Young EC, Chung RB, Wu F, Pfaff NA, Tsai M, Fujito K, Denbaars SP, Speck JS, Nakamura S, Cohen DA. 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100. DOI: 10.1063/1.4704560  0.429
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.395
2012 Hodges C, Killat N, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Wolverson D, Kuball M. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers Applied Physics Letters. 100. DOI: 10.1063/1.3693427  0.751
2012 Toledo NG, Friedman DJ, Farrell RM, Perl EE, Lin CT, Bowers JE, Speck JS, Mishra UK. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.3690907  0.325
2012 Henry TA, Armstrong A, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3687700  0.43
2012 Hoi Wong M, Wu F, Hurni CA, Choi S, Speck JS, Mishra UK. Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source Applied Physics Letters. 100. DOI: 10.1063/1.3686922  0.774
2012 Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528  0.764
2012 Hurni CA, Choi S, Bierwagen O, Speck JS. Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films Applied Physics Letters. 100: 82106. DOI: 10.1063/1.3680102  0.739
2012 Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850  0.392
2012 Choi P, Cojocaru-Mirédin O, Abou-Ras D, Caballero R, Raabe D, Smentkowski VS, Park CG, Gu GH, Mazumder B, Wong MH, Hu Y, Melo TP, Speck JS. Atom-Probe Tomography of compound semiconductors for photovoltaic and light-emitting device applications Microscopy Today. 20: 18-24. DOI: 10.1017/S1551929512000235  0.305
2012 Lang JR, Speck JS. NH 3-rich growth of InGaN and InGaN/GaN superlattices by NH 3-based molecular beam epitaxy Journal of Crystal Growth. 346: 50-55. DOI: 10.1016/J.Jcrysgro.2012.02.036  0.725
2012 Kelchner KM, DenBaars SP, Speck JS. GaN Laser Diodes on Nonpolar and Semipolar Planes Semiconductors and Semimetals. 86: 149-182. DOI: 10.1016/B978-0-12-391066-0.00004-6  0.38
2012 Fujiwara T, Keller S, Speck JS, Denbaars SP, Mishra UK. Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n +-GaN contact layer Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 891-893. DOI: 10.1002/Pssc.201100419  0.357
2012 Garrett GA, Rotella P, Shen H, Wraback M, Haeger DA, Chung RB, Pfaff N, Young EC, Denbaars SP, Speck JS, Cohen DA. Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN Physica Status Solidi (B) Basic Research. 249: 507-510. DOI: 10.1002/Pssb.201100528  0.373
2012 Raman A, Hurni CA, Speck JS, Mishra UK. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy Physica Status Solidi (a). 209: 216-220. DOI: 10.1002/Pssa.201127169  0.759
2012 Keller S, Lu J, Mishra UK, Denbaars SP, Speck JS. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica Physica Status Solidi (a) Applications and Materials Science. 209: 431-433. DOI: 10.1002/Pssa.201100349  0.37
2011 Chung RB, Bierwagen O, Wu F, Keller S, Denbaars SP, Speck JS, Nakamura S. Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101001  0.403
2011 Fujiwara T, Yeluri R, Denninghoff D, Lu J, Keller S, Speck JS, DenBaars SP, Mishra UK. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with +3 v of threshold voltage using Al2O3 deposited by atomic layer deposition Applied Physics Express. 4. DOI: 10.1143/Apex.4.096501  0.406
2011 Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/Apex.4.092105  0.403
2011 Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104  0.363
2011 Young EC, Romanov AE, Speck JS. Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements Applied Physics Express. 4: 61001. DOI: 10.1143/Apex.4.061001  0.325
2011 Dasgupta S, Nidhi, Choi S, Wu F, Speck JS, Mishra UK. Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 4: 45502. DOI: 10.1143/Apex.4.045502  0.347
2011 Singisetti U, Wong MH, Dasgupta S, Speck JS, Mishra UK. Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz Applied Physics Express. 4. DOI: 10.1143/Apex.4.024103  0.365
2011 Kaun SW, Wong MH, Dasgupta S, Choi S, Chung R, Mishra UK, Speck JS. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101. DOI: 10.1143/Apex.4.024101  0.775
2011 Schmidt MC, Poblenz C, Chang YC, Li B, Mondry MJ, Iveland J, Krames MR, Craig R, Raring JW, Speck JS, DenBaars SP, Nakamura S. High performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 8039. DOI: 10.1117/12.872023  0.68
2011 Nidhi, Dasgupta S, Keller S, Speck JS, Mishra UK. N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications Ieee Electron Device Letters. 32: 1683-1685. DOI: 10.1109/Led.2011.2168558  0.383
2011 Dasgupta S, Nidhi, Raman A, Speck JS, Mishra UK. Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base Ieee Electron Device Letters. 32: 1212-1214. DOI: 10.1109/Led.2011.2158980  0.386
2011 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125  0.351
2011 Nidhi, Dasgupta S, Brown DF, Singisetti U, Keller S, Speck JS, Mishra UK. Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs Ieee Electron Device Letters. 32: 33-35. DOI: 10.1109/Led.2010.2086427  0.402
2011 Bierwagen O, Choi S, Speck JS. Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN Physical Review B. 84: 235302. DOI: 10.1103/Physrevb.84.235302  0.324
2011 Miller N, Haller EE, Koblmüller G, Gallinat C, Speck JS, Schaff WJ, Hawkridge ME, Yu KM, Ager JW. Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075315  0.353
2011 Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113  0.353
2011 Mayer MA, Choi S, Bierwagen O, Smith HM, Haller EE, Speck JS, Walukiewicz W. Electrical and optical properties of p-type InN Journal of Applied Physics. 110. DOI: 10.1063/1.3670038  0.346
2011 Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791  0.355
2011 Gao F, Lu B, Li L, Kaun S, Speck JS, Thompson CV, Palacios T. Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3665065  0.728
2011 Ťapajna M, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Kuball M. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99: 223501. DOI: 10.1063/1.3663573  0.754
2011 Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041  0.694
2011 Farrell RM, Haeger DA, Hsu PS, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3657149  0.371
2011 Farrell RM, Haeger DA, Hsu PS, Schmidt MC, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3656970  0.343
2011 Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560  0.365
2011 Hsu PS, Young EC, Romanov AE, Fujito K, Denbaars SP, Nakamura S, Speck JS. Misfit dislocation formation via pre-existing threading dislocation glide in (11 2 2) semipolar heteroepitaxy Applied Physics Letters. 99. DOI: 10.1063/1.3628459  0.349
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850  0.373
2011 Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826  0.373
2011 Matioli E, Brinkley S, Kelchner KM, Nakamura S, Denbaars S, Speck J, Weisbuch C. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Applied Physics Letters. 98. DOI: 10.1063/1.3602319  0.348
2011 Nagata T, Bierwagen O, White ME, Tsai MY, Yamashita Y, Yoshikawa H, Ohashi N, Kobayashi K, Chikyow T, Speck JS. XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films Applied Physics Letters. 98. DOI: 10.1063/1.3596449  0.358
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Lang JR, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Effect of doping and polarization on carrier collection in InGaN quantum well solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3595487  0.7
2011 Farrell RM, Neufeld CJ, Cruz SC, Lang JR, Iza M, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm Applied Physics Letters. 98. DOI: 10.1063/1.3591976  0.687
2011 Romanov AE, Young EC, Wu F, Tyagi A, Gallinat CS, Nakamura S, Denbaars SP, Speck JS. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3590141  0.382
2011 Bierwagen O, Speck JS, Nagata T, Chikyow T, Yamashita Y, Yoshikawa H, Kobayashi K. Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment Applied Physics Letters. 98: 172101. DOI: 10.1063/1.3583446  0.347
2011 Pfüller C, Brandt O, Flissikowski T, Grahn HT, Ive T, Speck JS, DenBaars SP. Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires Applied Physics Letters. 98: 113113. DOI: 10.1063/1.3567548  0.366
2011 Rangel E, Matioli E, Choi YS, Weisbuch C, Speck JS, Hu EL. Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3554417  0.33
2011 Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen D, Speck JS, Nakamura S, Denbaars SP. Polarized spontaneous emission from blue-green m -plane GaN-based light emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3541655  0.405
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.327
2011 Wu F, Tyagi A, Young EC, Romanov AE, Fujito K, DenBaars SP, Nakamura S, Speck JS. Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates Journal of Applied Physics. 109: 33505. DOI: 10.1063/1.3531577  0.445
2011 Simeonov D, Tsai MY, Chen HT, Weisbuch C, Speck J. Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices Electronics Letters. 47: 556-558. DOI: 10.1049/El.2011.0514  0.31
2011 Wong MH, Brown DF, Schuette ML, Kim H, Balasubramanian V, Lu W, Speck JS, Mishra UK. X-band power performance of N-face GaN MIS-HEMTs Electronics Letters. 47: 214-215. DOI: 10.1049/El.2010.3129  0.388
2011 Roy T, Puzyrev YS, Zhang EX, Dasgupta S, Francis SA, Fleetwood DM, Schrimpf RD, Mishra UK, Speck JS, Pantelides ST. 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions Microelectronics Reliability. 51: 212-216. DOI: 10.1016/J.Microrel.2010.09.022  0.32
2011 Chung RB, Wu F, Shivaraman R, Keller S, Denbaars SP, Speck JS, Nakamura S. Growth study and impurity characterization of AlxIn 1-xN grown by metal organic chemical vapor deposition Journal of Crystal Growth. 324: 163-167. DOI: 10.1016/J.Jcrysgro.2011.04.025  0.808
2011 Hu YL, Kraemer S, Fini PT, Speck JS. Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth Journal of Crystal Growth. 331: 49-55. DOI: 10.1016/J.Jcrysgro.2011.03.063  0.406
2011 Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, Denbaars SP, Speck JS. Electroluminescence enhancement of (112̄2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Current Applied Physics. 11: 954-958. DOI: 10.1016/J.Cap.2011.01.001  0.386
2011 Hardy MT, Farrell RM, Hsu PS, Haeger DA, Kelchner K, Fujito K, Chakraborty A, Cohen DA, Nakamura S, Speck JS, Denbaars SP. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2226-2228. DOI: 10.1002/Pssc.201001149  0.399
2011 Hsu PS, Sonoda J, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Young EC, Romanov AE, Fujito K, Ohta H, Denbaars SP, Speck JS, Nakamura S. Blue InGaN/GaN laser diodes grown on (333̄1̄) free-standing GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2390-2392. DOI: 10.1002/Pssc.201001012  0.407
2011 Keller S, Dora Y, Chowdhury S, Wu F, Chen X, Denbaars SP, Speck JS, Mishra UK. Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2086-2088. DOI: 10.1002/Pssc.201000958  0.422
2011 Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/Pssc.201000955  0.697
2011 Bryant BN, Kamber DS, Wu F, Nakamura S, Speck JS. Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1463-1466. DOI: 10.1002/Pssc.201000908  0.815
2010 Huang CY, Tyagi A, Lin YD, Hardy MT, Hsu PS, Fujito K, Ha JS, Ohta H, Speck JS, DenBaars SP, Nakamura S. Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122) (Al,In,Ga)N waveguide structures Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.010207  0.346
2010 Raring JW, Schmidt MC, Poblenz C, Chang YC, Mondry MJ, Li B, Iveland J, Walters B, Krames MR, Craig R, Rudy P, Speck JS, DenBaars SP, Nakamura S. High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.112101  0.686
2010 Young EC, Gallinat CS, Romanov AE, Tyagi A, Wu F, Speck JS. Critical thickness for onset of plastic relaxation in (112̄2) and (202̄1) semipolar AlGaN heterostructures Applied Physics Express. 3. DOI: 10.1143/Apex.3.111002  0.369
2010 Fujiwara T, Keller S, Speck JS, DenBaars SP, Mishra UK. Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations Applied Physics Express. 3: 101002. DOI: 10.1143/Apex.3.101002  0.384
2010 Metcalfe GD, Shen H, Wraback M, Koblmüller G, Gallinat C, Wu F, Speck JS. Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field Applied Physics Express. 3: 92201. DOI: 10.1143/Apex.3.092201  0.312
2010 Kelchner KM, Farrell RM, Lin YD, Hsu PS, Hardy MT, Wu F, Cohen DA, Ohta H, Speck JS, Nakamura S, DenBaars SP. Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.092103  0.35
2010 Lin Y, Yamamoto S, Huang C, Hsiung C, Wu F, Fujito K, Ohta H, Speck JS, DenBaars SP, Nakamura S. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes Applied Physics Express. 3: 82001. DOI: 10.1143/Apex.3.082001  0.385
2010 Hsu PS, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Fujito K, Ohta H, DenBaars SP, Speck JS, Nakamura S. InGaN/GaN blue laser diode grown on semipolar (303̄1) free-standing GaN substrates Applied Physics Express. 3: 10DUMY. DOI: 10.1143/Apex.3.052702  0.412
2010 White ME, Bierwagen O, Tsai MY, Speck JS. Synthesis and characterization of highly resistive epitaxial indium-doped SnO2 Applied Physics Express. 3. DOI: 10.1143/Apex.3.051101  0.383
2010 Young EC, Wu F, Romanov AE, Tyagi A, Gallinat CS, DenBaars SP, Nakamura S, Speck JS. Lattice tilt and misfit dislocations in (112̄2) semipolar GaN heteroepitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.011004  0.36
2010 Tyagi A, Farrell MR, Kelchner KM, Huang CY, Hsu PS, Haeger DA, Hardy MT, Holder C, Fujito K, Cohen DA, Ohta H, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm Applied Physics Express. 3. DOI: 10.1143/Apex.3.011002  0.397
2010 Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Kebort D, Chang YC, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.849713  0.683
2010 Tsai MY, Bierwagen O, White ME, Speck JS. Β-Ga2O3 growth by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 354-359. DOI: 10.1116/1.3294715  0.364
2010 Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452  0.684
2010 Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791  0.389
2010 Xu G, Ding YJ, Zhao H, Liu G, Jamil M, Tansu N, Zotova IB, Stutz CE, Diggs DE, Fernelius N, Hopkins FK, Gallinat CS, Koblmüller G, Speck JS. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015004  0.388
2010 Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003  0.427
2010 Wong MH, Wu F, Speck JS, Mishra UK. Polarity inversion of N-face GaN using an aluminum oxide interlayer Journal of Applied Physics. 108: 123710. DOI: 10.1063/1.3524473  0.434
2010 Hurni CA, Bierwagen O, Lang JR, McSkimming BM, Gallinat CS, Young EC, Browne DA, Mishra UK, Speck JS. P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Applied Physics Letters. 97. DOI: 10.1063/1.3521388  0.824
2010 Reurings F, Tuomisto F, Gallinat CS, Koblmüller G, Speck JS. In vacancies in InN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 97. DOI: 10.1063/1.3516467  0.429
2010 Koblmüller G, Reurings F, Tuomisto F, Speck JS. Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature Applied Physics Letters. 97: 191915. DOI: 10.1063/1.3514236  0.443
2010 Keller S, Dora Y, Wu F, Chen X, Chowdury S, Denbaars SP, Speck JS, Mishra UK. Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition Applied Physics Letters. 97. DOI: 10.1063/1.3499428  0.448
2010 Linhart WM, Veal TD, King PDC, Koblmüller G, Gallinat CS, Speck JS, McConville CF. Surface, bulk, and interface electronic properties of nonpolar InN Applied Physics Letters. 97. DOI: 10.1063/1.3488821  0.348
2010 Rangel E, Matioli E, Chen HT, Choi YS, Weisbuch C, Speck JS, Hu EL. Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3480421  0.372
2010 Bierwagen O, Speck JS. High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration Applied Physics Letters. 97: 72103. DOI: 10.1063/1.3480416  0.383
2010 Arehart AR, Homan T, Wong MH, Poblenz C, Speck JS, Ringel SA. Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3453660  0.713
2010 Wu F, Lin Y, Chakraborty A, Ohta H, DenBaars SP, Nakamura S, Speck JS. Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN Applied Physics Letters. 96: 231912. DOI: 10.1063/1.3447940  0.382
2010 Farrell RM, Haeger DA, Chen X, Gallinat CS, Davis RW, Cornish M, Fujito K, Keller S, Denbaars SP, Nakamura S, Speck JS. Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3447926  0.43
2010 Farrell RM, Hsu PS, Haeger DA, Fujito K, Denbaars SP, Speck JS, Nakamura S. Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes Applied Physics Letters. 96. DOI: 10.1063/1.3443719  0.383
2010 Miller N, Ager JW, Smith HM, Mayer MA, Yu KM, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Hole transport and photoluminescence in Mg-doped InN Journal of Applied Physics. 107. DOI: 10.1063/1.3427564  0.385
2010 Bierwagen O, Speck JS. Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001) Journal of Applied Physics. 107: 113519. DOI: 10.1063/1.3415539  0.413
2010 Dasgupta S, Nidhi, Brown DF, Wu F, Keller S, Speck JS, Mishra UK. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth Applied Physics Letters. 96: 143504. DOI: 10.1063/1.3374331  0.393
2010 Law JJM, Yu ET, Koblmüller G, Wu F, Speck JS. Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy Applied Physics Letters. 96: 102111. DOI: 10.1063/1.3360227  0.435
2010 Gallinat CS, Koblmüller G, Wu F, Speck JS. Evaluation of threading dislocation densities in In-and N-face InN Journal of Applied Physics. 107. DOI: 10.1063/1.3319557  0.393
2010 Matioli E, Fleury B, Rangel E, Hu E, Speck J, Weisbuch C. Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3309837  0.324
2010 Arehart AR, Poblenz C, Speck JS, Ringel SA. Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy Journal of Applied Physics. 107. DOI: 10.1063/1.3309778  0.697
2010 Nagata T, Bierwagen O, White ME, Tsai MY, Speck JS. Study of the Au Schottky contact formation on oxygen plasma treated n -type SnO2 (101) thin films Journal of Applied Physics. 107. DOI: 10.1063/1.3298467  0.351
2010 Brown DF, Keller S, Mates TE, Speck JS, DenBaars SP, Mishra UK. Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition Journal of Applied Physics. 107: 033509. DOI: 10.1063/1.3296127  0.374
2010 Matioli E, Rangel E, Iza M, Fleury B, Pfaff N, Speck J, Hu E, Weisbuch C. High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals Applied Physics Letters. 96. DOI: 10.1063/1.3293442  0.311
2010 Koblmüller G, Chu RM, Raman A, Mishra UK, Speck JS. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels Journal of Applied Physics. 107: 43527. DOI: 10.1063/1.3285309  0.488
2010 Young EC, Romanov AE, Gallinat CS, Hirai A, Beltz GE, Speck JS. Anisotropy of tensile stresses and cracking in nonbasal plane Al xGa1-xN/GaN heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3276561  0.762
2010 Huang C, Lin Y, Tyagi A, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Optical waveguide simulations for the optimization of InGaN-based green laser diodes Journal of Applied Physics. 107: 23101. DOI: 10.1063/1.3275325  0.384
2010 Farrell RM, Haeger DA, Chen X, Iza M, Hirai A, Kelchner KM, Fujito K, Chakraborty A, Keller S, Denbaars SP, Speck JS, Nakamura S. Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 313: 1-7. DOI: 10.1016/J.Jcrysgro.2010.08.060  0.816
2010 Ben-Yaacov T, Ive T, Van De Walle CG, Mishra UK, Speck JS, Denbaars SP. Properties of in-doped ZnO films grown by metalorganic chemical vapor deposition on GaN(0001) templates Journal of Electronic Materials. 39: 608-611. DOI: 10.1007/S11664-009-1022-X  0.391
2010 Shen H, Garrett GA, Wraback M, Zhong H, Tyagi A, DenBaars SP, Nakamura S, Speck JS. Polarization field crossover in semi-polar InGaN/GaN single quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2378-2381. DOI: 10.1002/Pssc.200983893  0.313
2010 Rauch C, Reurings F, Tuomisto F, Veal TD, McConville CF, Lu H, Schaff WJ, Gallinat CS, Koblmüller G, Speck JS, Egger W, Löwe B, Ravelli L, Sojak S. In-vacancies in Si-doped InN Physica Status Solidi (a) Applications and Materials Science. 207: 1083-1086. DOI: 10.1002/Pssa.200983120  0.39
2010 Schley P, Räthel J, Sakalauskas E, Gobsch G, Wieneke M, Bläsing J, Krost A, Koblmüller G, Speck JS, Goldhahn R. Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates Physica Status Solidi (a) Applications and Materials Science. 207: 1062-1065. DOI: 10.1002/Pssa.200983104  0.362
2009 Speck JS, Chichibu SF. Nonpolar and Semipolar Group III Nitride-Based Materials Mrs Bulletin. 34: 304-312. DOI: 10.1557/Mrs2009.91  0.404
2009 Tamboli AC, Schmidt MC, Rajan S, Speck JS, Mishra UK, Denbaars SP, Hu EL. Smooth top-down photoelectrochemical etching of m -plane GaN Journal of the Electrochemical Society. 156: H47-H51. DOI: 10.1149/1.3005978  0.397
2009 Zhong H, Tyagi A, Pfaff N, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Enhancing the light extraction efficiency of blue semipolar (101̄1̄) nitride-based light emitting diodes through surface patterning Japanese Journal of Applied Physics. 48: 030201. DOI: 10.1143/Jjap.48.030201  0.388
2009 Hardy MT, Kelchner KM, Lin YD, Hsu PS, Fujito K, Ohta H, Speck JS, Nakamura S, DenBaars SP. m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching Applied Physics Express. 2. DOI: 10.1143/Apex.2.121004  0.349
2009 Bierwagen O, White ME, Tsai MY, Nagata T, Speck JS. Non-alloyed schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films Applied Physics Express. 2. DOI: 10.1143/Apex.2.106502  0.345
2009 Lin YD, Hardy MT, Hsu PS, Kelchner KM, Huang CY, Haeger DA, Farrell RM, Fujito K, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Blue - Green ingan/gan laser diodes on miscut m - Plane gan substrate Applied Physics Express. 2. DOI: 10.1143/Apex.2.082102  0.414
2009 Kelchner KM, Lin YD, Hardy MT, Huang CY, Hsu PS, Farrell RM, Haeger DA, Kuo HC, Wu F, Fujito K, Cohen DA, Chakraborty A, Ohta H, Speck JS, Nakamura S, et al. Nonpolar ALGaN-cladding-free blue laser diodes with InGaN waveguiding Applied Physics Express. 2. DOI: 10.1143/Apex.2.071003  0.373
2009 Fujiwara T, Keller S, Higashiwaki M, Speck JS, DenBaars SP, Mishra UK. Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors Applied Physics Express. 2: 61003. DOI: 10.1143/Apex.2.061003  0.401
2009 Asamizu H, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides Applied Physics Express. 2: 21002. DOI: 10.1143/Apex.2.021002  0.37
2009 Fujiwara T, Rajan S, Keller S, Higashiwaki M, Speck JS, DenBaars SP, Mishra UK. Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors Applied Physics Express. 2: 11001. DOI: 10.1143/Apex.2.011001  0.342
2009 Wong MH, Pei Y, Brown DF, Keller S, Speck JS, Mishra UK. High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency Ieee Electron Device Letters. 30: 802-804. DOI: 10.1109/Led.2009.2024443  0.399
2009 Sansaptak ND, Pie Y, Swenson BL, Brown DF, Keller S, Speck JS, Mishra UK. fT and fMAX of 47 and 81 GHz, respectively, on N-polar GaN/AlN MIS-HEMT Ieee Electron Device Letters. 30: 599-601. DOI: 10.1109/Led.2009.2020305  0.425
2009 Bierwagen O, White ME, Tsai MY, Speck JS. Plasma-assisted molecular beam epitaxy of high quality In2O 3(001) thin films on Y-stabilized ZrO2(001) using in as an auto surfactant Applied Physics Letters. 95. DOI: 10.1063/1.3276910  0.349
2009 Tyagi A, Wu F, Young EC, Chakraborty A, Ohta H, Bhat R, Fujito K, DenBaars SP, Nakamura S, Speck JS. Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates Applied Physics Letters. 95: 251905. DOI: 10.1063/1.3275717  0.379
2009 White ME, Bierwagen O, Tsai MY, Speck JS. Electron transport properties of antimony doped Sn O2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 106. DOI: 10.1063/1.3254241  0.426
2009 Nagata T, Koblmüller G, Bierwagen O, Gallinat CS, Speck JS. Surface structure and chemical states of a-plane and c-plane InN films Applied Physics Letters. 95. DOI: 10.1063/1.3238286  0.362
2009 Lin YD, Huang CY, Hardy MT, Hsu PS, Fujito K, Chakraborty A, Ohta H, Speck JS, Denbaars SP, Nakamura S. M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers Applied Physics Letters. 95. DOI: 10.1063/1.3212146  0.376
2009 Koehl WF, Wong MH, Poblenz C, Swenson B, Mishra UK, Speck JS, Awschalom DD. Current-induced spin polarization in gallium nitride Applied Physics Letters. 95. DOI: 10.1063/1.3194781  0.673
2009 Matioli E, Keller S, Wu F, Choi YS, Hu E, Speck J, Weisbuch C. Growth of embedded photonic crystals for GaN-based optoelectronic devices Journal of Applied Physics. 106. DOI: 10.1063/1.3174385  0.388
2009 Gallinat CS, Koblmüller G, Speck JS. The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN Applied Physics Letters. 95. DOI: 10.1063/1.3173202  0.351
2009 Lin YD, Chakraborty A, Brinkley S, Kuo HC, Melo T, Fujito K, Speck JS, Denbaars SP, Nakamura S. Characterization of blue-green m -plane InGaN light emitting diodes Applied Physics Letters. 94. DOI: 10.1063/1.3167824  0.399
2009 Shen H, Wraback M, Zhong H, Tyagi A, DenBaars SP, Nakamura S, Speck JS. Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well Applied Physics Letters. 95: 33503. DOI: 10.1063/1.3167809  0.33
2009 Akopian N, Vardi A, Bahir G, Garber V, Ehrenfreund E, Gershoni D, Poblenz C, Elsass CR, Smorchkova IP, Speck JS. Fermi edge singularity observed in GaN/AlGaN heterointerfaces Applied Physics Letters. 94. DOI: 10.1063/1.3147869  0.707
2009 Navarro A, Rivera C, Pereiro J, Muoz E, Imer B, Denbaars SP, Speck JS. High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications Applied Physics Letters. 94. DOI: 10.1063/1.3143230  0.358
2009 Wong MH, Pei Y, Speck JS, Mishra UK. High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation Applied Physics Letters. 94: 182103. DOI: 10.1063/1.3130228  0.451
2009 Getty A, Matioli E, Iza M, Weisbuch C, Speck JS. Electroluminescent measurement of the internal quantum efficiency of light emitting diodes Applied Physics Letters. 94: 181102. DOI: 10.1063/1.3129866  0.787
2009 Bierwagen O, Nagata T, Ive T, Walle CGVd, Speck JS. Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements Applied Physics Letters. 94: 152110. DOI: 10.1063/1.3120562  0.307
2009 Dasgupta S, Wu F, Speck JS, Mishra UK. Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy Applied Physics Letters. 94: 151906. DOI: 10.1063/1.3118593  0.397
2009 Koblmüller G, Metcalfe GD, Wraback M, Wu F, Gallinat CS, Speck JS. In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN Applied Physics Letters. 94. DOI: 10.1063/1.3092482  0.449
2009 Newman SA, Kamber DS, Baker TJ, Wu Y, Wu F, Chen Z, Namakura S, Speck JS, Denbaars SP. Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy Applied Physics Letters. 94. DOI: 10.1063/1.3089253  0.416
2009 Saito M, Yamada H, Iso K, Sato H, Hirasawa H, Kamber DS, Hashimoto T, Denbaars SP, Speck JS, Nakamura S. Evaluation of GaN substrates grown in supercritical basic ammonia Applied Physics Letters. 94. DOI: 10.1063/1.3079813  0.414
2009 Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona TM, Kamber DS, Wu Y, Letts E, Newman SA, Nakamura S, Speck JS, Mishra UK, Denbaars SP, Onuma T, et al. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105. DOI: 10.1063/1.3079333  0.41
2009 Miller N, Ager JW, Jones RE, Smith HM, Mayer MA, Yu KM, Hawkridge ME, Liliental-Weber Z, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Electrical and electrothermal transport in InN: The roles of defects Physica B: Condensed Matter. 404: 4862-4865. DOI: 10.1016/J.Physb.2009.08.242  0.372
2009 Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC. GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy Journal of Crystal Growth. 311: 1239-1244. DOI: 10.1016/J.Jcrysgro.2008.12.050  0.407
2009 Letts ER, Speck JS, Nakamura S. Effect of indium on the physical vapor transport growth of AlN Journal of Crystal Growth. 311: 1060-1064. DOI: 10.1016/J.Jcrysgro.2008.12.030  0.331
2009 Ive T, Ben-Yaacov T, Van De Walle CG, Mishra UK, DenBaars SP, Speck JS. Homoepitaxial growth and characterization of ZnO (0001) thin films grown by metalorganic chemical vapor epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1460-1463. DOI: 10.1002/Pssc.200881531  0.436
2009 Ben-Yaacov T, Ive T, Van De Walle CG, Mishra UK, Speck JS, DenBaars SP. Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN (0001) templates Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1464-1467. DOI: 10.1002/Pssc.200881529  0.386
2009 Matioli E, Iza M, Choi YS, Wu F, Keller S, Masui H, Hu E, Speck J, Weisbuch C. GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S675-S679. DOI: 10.1002/Pssc.200880987  0.302
2009 Garrett GA, Shen H, Wraback M, Tyagi A, Schmidt MC, Speck JS, DenBaars SP, Nakamaura S. Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S800-S803. DOI: 10.1002/Pssc.200880974  0.369
2009 Reurings F, Tuomisto F, Gallinat CS, Koblmüller G, Speck JS. Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880952  0.408
2009 Masui H, Schmidt M, Fellows N, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Recent progress in nonpolar LEDs as polarized light emitters Physica Status Solidi (a) Applications and Materials Science. 206: 203-205. DOI: 10.1002/Pssa.200880407  0.352
2008 Chichibu SF, Uedono A, Onuma T, DenBaars SP, Mishra UK, Speck JS, Nakamura S. Impact of Point Defects on the Luminescence Properties of (Al,Ga)N Materials Science Forum. 590: 233-248. DOI: 10.4028/Www.Scientific.Net/Msf.590.233  0.398
2008 Sato H, Hirasawa H, Asamizu H, Fellows N, Tyagi A, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. High power and high efficiency semipolar InGaN light emitting diodes Journal of Light and Visual Environment. 32: 107-110. DOI: 10.2150/Jlve.32.107  0.386
2008 Masui H, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting Journal of the Society For Information Display. 16: 571. DOI: 10.1889/1.2905044  0.306
2008 Imer B, Haskell B, Rajan S, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555. DOI: 10.1557/Jmr.2008.0069  0.451
2008 McLaurin MB, Hirai A, Young E, Wu F, Speck JS. Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN Japanese Journal of Applied Physics. 47: 5429-5431. DOI: 10.1143/Jjap.47.5429  0.786
2008 Raman A, Dasgupta S, Rajan S, Speck JS, Mishra UK. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Japanese Journal of Applied Physics. 47: 3359-3361. DOI: 10.1143/Jjap.47.3359  0.346
2008 Saito M, Kamber DS, Baker TJ, Fujito K, DenBaars SP, Speck JS, Nakamura S. Plane dependent growth of GaN in supercritical basic ammonia Applied Physics Express. 1: 1211031-1211033. DOI: 10.1143/Apex.1.121103  0.355
2008 Tyagi A, Lin Y, Cohen DA, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures Applied Physics Express. 1: 91103. DOI: 10.1143/Apex.1.091103  0.348
2008 Asamizu H, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates Applied Physics Express. 1: 91102. DOI: 10.1143/Apex.1.091102  0.412
2008 Koblmüller G, Chu R, Wu F, Mishra UK, Speck JS. Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime Applied Physics Express. 1: 61103. DOI: 10.1143/Apex.1.061103  0.462
2008 Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101  0.708
2008 Wraback M, Chern GD, Readinger ED, Shen PH, Koblmüller G, Gallinat C, Speck JS. INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550nm LASER-BASED TERAHERTZ SOURCES IN CHEMICAL AND BIOLOGICAL DETECTION International Journal of High Speed Electronics and Systems. 18: 3-9. DOI: 10.1142/S0129156408005084  0.4
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0.403
2008 King PDC, Veal TD, Gallinat CS, Koblmüller G, Bailey LR, Speck JS, McConville CF. Influence of growth conditions and polarity on interface-related electron density in InN Journal of Applied Physics. 104. DOI: 10.1063/1.3020528  0.415
2008 Yamanaka T, Alexson D, Stroscio MA, Dutta M, Petroff P, Brown J, Speck J. Phonon modes in self-assembled GaN quantum dots Journal of Applied Physics. 104: 93512. DOI: 10.1063/1.3013885  0.306
2008 Wong MH, Wu F, Mates TE, Speck JS, Mishra UK. Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 104: 093710. DOI: 10.1063/1.3009669  0.45
2008 Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132  0.47
2008 Koblmüller G, Hirai A, Wu F, Gallinat CS, Metcalfe GD, Shen H, Wraback M, Speck JS. Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN Applied Physics Letters. 93. DOI: 10.1063/1.3001806  0.812
2008 Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, Ringel SA. Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.2981571  0.81
2008 McGroddy K, David A, Matioli E, Iza M, Nakamura S, Denbaars S, Speck JS, Weisbuch C, Hu EL. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2978068  0.327
2008 Fernández-Garrido S, Koblmüller G, Calleja E, Speck JS. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction Journal of Applied Physics. 104: 33541. DOI: 10.1063/1.2968442  0.405
2008 Brown DF, Keller S, Wu F, Speck JS, DenBaars SP, Mishra UK. Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition Journal of Applied Physics. 104: 24301. DOI: 10.1063/1.2956329  0.446
2008 Gorczyca I, Plesiewicz J, Dmowski L, Suski T, Christensen NE, Svane A, Gallinat CS, Koblmueller G, Speck JS. Electronic structure and effective masses of InN under pressure Journal of Applied Physics. 104. DOI: 10.1063/1.2953094  0.3
2008 Nidhi, Rajan S, Keller S, Wu F, DenBaars SP, Speck JS, Mishra UK. Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors Journal of Applied Physics. 103: 124508. DOI: 10.1063/1.2942394  0.425
2008 Sato H, Chung RB, Hirasawa H, Fellows N, Masui H, Wu F, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2938062  0.407
2008 Metcalfe GD, Shen H, Wraback M, Hirai A, Wu F, Speck JS. Enhanced terahertz radiation from high stacking fault density nonpolar GaN Applied Physics Letters. 92. DOI: 10.1063/1.2937911  0.776
2008 Corrion AL, Poblenz C, Wu F, Speck JS. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 103: 93529. DOI: 10.1063/1.2919163  0.744
2008 Kim KC, Schmidt MC, Wu F, McLaurin MB, Hirai A, Nakamura S, Denbaars SP, Speck JS. Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Applied Physics Letters. 93. DOI: 10.1063/1.2908978  0.818
2008 Armstrong A, Caudill J, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2891673  0.803
2008 Keller S, Suh CS, Chen Z, Chu R, Rajan S, Fichtenbaum NA, Furukawa M, DenBaars SP, Speck JS, Mishra UK. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838214  0.449
2008 Law JJM, Yu ET, Haskell BA, Fini PT, Nakamura S, Speck JS, Denbaars SP. Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2828161  0.362
2008 Pei Y, Poblenz C, Corrion AL, Chu R, Shen L, Speck JS, Mishra UK. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE Electronics Letters. 44: 598-599. DOI: 10.1049/El:20080669  0.699
2008 Tsai MY, White ME, Speck JS. Plasma-assisted molecular beam epitaxy of SnO2 on TiO2 Journal of Crystal Growth. 310: 4256-4261. DOI: 10.1016/J.Jcrysgro.2008.06.062  0.397
2008 Hashimoto T, Wu F, Speck JS, Nakamura S. Ammonothermal growth of bulk GaN Journal of Crystal Growth. 310: 3907-3910. DOI: 10.1016/J.Jcrysgro.2008.06.005  0.379
2008 Ive T, Ben-Yaacov T, Van de Walle CG, Mishra UK, DenBaars SP, Speck JS. Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy Journal of Crystal Growth. 310: 3407-3412. DOI: 10.1016/J.Jcrysgro.2008.04.032  0.424
2008 Hashimoto T, Wu F, Saito M, Fujito K, Speck JS, Nakamura S. Status and perspectives of the ammonothermal growth of GaN substrates Journal of Crystal Growth. 310: 876-880. DOI: 10.1016/J.Jcrysgro.2007.11.088  0.41
2008 Fehlberg TB, Gallinat CS, Umana-Membreno GA, Koblmüller G, Nener BD, Speck JS, Parish G. Effect of MBE growth conditions on multiple electron transport in InN Journal of Electronic Materials. 37: 593-596. DOI: 10.1007/S11664-007-0345-8  0.432
2008 Hisashi Y, Kenji Y, Makoto Y, Hiroliiko Y, Natalia Y, Kenji F, Speck JS, DenBaars SP, Shuji Y. Comparison of InGaN/GaN light emitting diodes grown on a-plane and a-plane bulk GaN substrates Physica Status Solidi - Rapid Research Letters. 2: 89-91. DOI: 10.1002/Pssr.200701313  0.414
2008 Schaake CA, Fichtenbaum NA, Neufeld CJ, Keller S, Denbaars SP, Speck JS, Mishra UK. M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2963-2965. DOI: 10.1002/Pssc.200779284  0.43
2008 Ive T, Ben-Yaacov T, Murai A, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 3091-3094. DOI: 10.1002/Pssc.200779197  0.44
2008 Choi YS, Iza M, Koblmüller G, Hurni C, Speck JS, Weisbuch C, Hu EL. Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2306-2308. DOI: 10.1002/Pssc.200778720  0.743
2008 Chern-Metcalfe GD, Readinger ED, Shen H, Wraback M, Koblmüller G, Gallinat CS, Speck JS. Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1846-1848. DOI: 10.1002/Pssc.200778696  0.336
2008 Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1750-1752. DOI: 10.1002/Pssc.200778622  0.732
2008 Ive T, Ben-Yaacov T, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1733-1735. DOI: 10.1002/Pssc.200778612  0.453
2008 Tyagi A, Zhong H, Chung RB, Feezell DF, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. InGaN/GaN laser diodes on semipolar (1011) bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2108-2110. DOI: 10.1002/Pssc.200778460  0.416
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