Year |
Citation |
Score |
2020 |
Abeyweera SC, Yu J, Perdew JP, Yan Q, Sun Y. Hierarchically 3D Porous Ag Nanostructures Derived from Silver Benzenethiolate Nanoboxes: Enabling CO2 Reduction with a Near-Unity Selectivity and Mass-Specific Current Density over 500 A/g. Nano Letters. PMID 32197043 DOI: 10.1021/Acs.Nanolett.0C00518 |
0.358 |
|
2020 |
Zhang Y, Pan J, Banjade H, Yu J, Lin H, Bansil A, Du S, Yan Q. Two-dimensional MX Dirac materials and quantum spin Hall insulators with tunable electronic and topological properties Nano Research. 1-6. DOI: 10.1007/S12274-020-3022-3 |
0.408 |
|
2019 |
Sun Y, Pan J, Zhang Z, Zhang K, Liang J, Wang W, Yuan Z, Hao Y, Wang B, Wang J, Wu Y, Zheng J, Jiao L, Zhou S, Liu K, ... ... Yan Q, et al. Elastic Properties and Fracture Behaviors of Biaxially-Deformed, Polymorphic MoTe2. Nano Letters. PMID 30621399 DOI: 10.1021/Acs.Nanolett.8B03833 |
0.357 |
|
2019 |
Zeng J, Zhang Y, Qin W, Cui P, Yan Q, Zhang Z. Varying topological properties of two-dimensional honeycomb lattices composed of endohedral fullerenes Physical Review B. 100: 45143. DOI: 10.1103/Physrevb.100.045143 |
0.307 |
|
2018 |
Suram SK, Zhou L, Shinde A, Yan Q, Yu J, Umehara M, Stein HS, Neaton JB, Gregoire JM. Alkaline-stable nickel manganese oxides with ideal band gap for solar fuel photoanodes. Chemical Communications (Cambridge, England). PMID 29671420 DOI: 10.1039/C7Cc08002F |
0.642 |
|
2017 |
Wang J, Sui X, Shi W, Pan J, Zhang S, Liu F, Wei SH, Yan Q, Huang B. Prediction of Ideal Topological Semimetals with Triply Degenerate Points in the NaCu_{3}Te_{2} Family. Physical Review Letters. 119: 256402. PMID 29303319 DOI: 10.1103/Physrevlett.119.256402 |
0.348 |
|
2017 |
Thenuwara AC, Attanayake NH, Yu J, Perdew JP, Elzinga EJ, Yan Q, Strongin DR. Cobalt Intercalated Layered NiFe Double Hydroxides for the Oxygen Evolution Reaction. The Journal of Physical Chemistry. B. PMID 28880559 DOI: 10.1021/Acs.Jpcb.7B06935 |
0.336 |
|
2017 |
Yan Q, Yu J, Suram SK, Zhou L, Shinde A, Newhouse PF, Chen W, Li G, Persson KA, Gregoire JM, Neaton JB. Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment. Proceedings of the National Academy of Sciences of the United States of America. PMID 28265095 DOI: 10.1073/Pnas.1619940114 |
0.607 |
|
2017 |
Weber SF, Chen R, Yan Q, Neaton JB. Prediction of TiRhAs as a Dirac nodal line semimetal via first-principles calculations Physical Review B. 96. DOI: 10.1103/Physrevb.96.235145 |
0.539 |
|
2017 |
Jones CM, Teng CH, Yan Q, Ku PC, Kioupakis E. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations Applied Physics Letters. 111: 113501. DOI: 10.1063/1.5002104 |
0.63 |
|
2017 |
Shinde A, Suram SK, Yan Q, Zhou L, Singh AK, Yu J, Persson KA, Neaton JB, Gregoire JM. Discovery of Manganese-Based Solar Fuel Photoanodes via Integration of Electronic Structure Calculations, Pourbaix Stability Modeling, and High-Throughput Experiments Acs Energy Letters. 2: 2307-2312. DOI: 10.1021/Acsenergylett.7B00607 |
0.595 |
|
2016 |
Zhou L, Yan Q, Yu J, Jones RJ, Becerra-Stasiewicz N, Suram SK, Shinde A, Guevarra D, Neaton JB, Persson KA, Gregoire JM. Stability and self-passivation of copper vanadate photoanodes under chemical, electrochemical, and photoelectrochemical operation. Physical Chemistry Chemical Physics : Pccp. PMID 26997488 DOI: 10.1039/C6Cp00473C |
0.536 |
|
2016 |
Freysoldt C, Lange B, Neugebauer J, Yan Q, Lyons JL, Janotti A, Van De Walle CG. Electron and chemical reservoir corrections for point-defect formation energies Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.165206 |
0.398 |
|
2016 |
Shinde A, Li G, Zhou L, Guevarra D, Suram SK, Toma FM, Yan Q, Haber JA, Neaton JB, Gregoire JM. The role of the CeO2/BiVO4 interface in optimized Fe–Ce oxide coatings for solar fuels photoanodes Journal of Materials Chemistry A. 4: 14356-14363. DOI: 10.1039/C6Ta04746G |
0.511 |
|
2015 |
Yu J, Yan Q, Chen W, Jain A, Neaton JB, Persson KA. First-principles study of electronic structure and photocatalytic properties of MnNiO3 as an alkaline oxygen-evolution photocatalyst. Chemical Communications (Cambridge, England). 51: 2867-70. PMID 25582626 DOI: 10.1039/C4Cc08111K |
0.623 |
|
2015 |
Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647 |
0.355 |
|
2015 |
Zhou L, Yan Q, Shinde A, Guevarra D, Newhouse PF, Becerra-Stasiewicz N, Chatman SM, Haber JA, Neaton JB, Gregoire JM. High Throughput Discovery of Solar Fuels Photoanodes in the CuO-V2O5 System Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201500968 |
0.562 |
|
2015 |
Yan Q, Li G, Newhouse PF, Yu J, Persson KA, Gregoire JM, Neaton JB. Mn2V2O7: An earth abundant light absorber for solar water splitting Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201401840 |
0.597 |
|
2014 |
Liu K, Yan Q, Chen M, Fan W, Sun Y, Suh J, Fu D, Lee S, Zhou J, Tongay S, Ji J, Neaton JB, Wu J. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures. Nano Letters. 14: 5097-103. PMID 25120033 DOI: 10.1021/Nl501793A |
0.502 |
|
2014 |
Yan Q, Rinke P, Janotti A, Scheffler M, Van De Walle CG. Effects of strain on the band structure of group-III nitrides Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125118 |
0.558 |
|
2014 |
Yan Q, Kioupakis E, Jena D, Van De Walle CG. First-principles study of high-field-related electronic behavior of group-III nitrides Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121201 |
0.661 |
|
2014 |
Alkauskas A, Yan Q, Walle CGVd. First-principles theory of nonradiative carrier capture via multiphonon emission Physical Review B. 90: 75202. DOI: 10.1103/Physrevb.90.075202 |
0.436 |
|
2014 |
Wang N, West D, Liu J, Li J, Yan Q, Gu B, Zhang SB, Duan W. Microscopic origin of the p -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying Physical Review B. 89: 45142. DOI: 10.1103/Physrevb.89.045142 |
0.373 |
|
2014 |
Yan Q, Janotti A, Scheffler M, Van De Walle CG. Origins of optical absorption and emission lines in AlN Applied Physics Letters. 105. DOI: 10.1063/1.4895786 |
0.501 |
|
2014 |
McBride PM, Yan Q, Walle CGVd. Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes Applied Physics Letters. 105: 83507. DOI: 10.1063/1.4894464 |
0.349 |
|
2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.698 |
|
2013 |
Kioupakis E, Yan Q, Steiauf D, Walle CGVd. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices New Journal of Physics. 15: 125006. DOI: 10.1088/1367-2630/15/12/125006 |
0.653 |
|
2012 |
Miao MS, Yan Q, Walle CGVd, Lou WK, Li LL, Chang K. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well. Physical Review Letters. 109: 186803-186803. PMID 23215311 DOI: 10.1103/Physrevlett.109.186803 |
0.379 |
|
2012 |
Kioupakis E, Yan Q, Walle CGVd. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Applied Physics Letters. 101: 231107. DOI: 10.1063/1.4769374 |
0.65 |
|
2012 |
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van De Walle CG. Strain effects and band parameters in MgO, ZnO, and CdO Applied Physics Letters. 101. DOI: 10.1063/1.4759107 |
0.539 |
|
2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.349 |
|
2012 |
Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100 |
0.334 |
|
2012 |
Roberts C, Yan Q, Miao M, Walle CGVd. Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells Journal of Applied Physics. 111: 73113. DOI: 10.1063/1.3702798 |
0.382 |
|
2012 |
Yan Q, Janotti A, Scheffler M, Van De Walle CG. Role of nitrogen vacancies in the luminescence of Mg-doped GaN Applied Physics Letters. 100. DOI: 10.1063/1.3699009 |
0.493 |
|
2011 |
Moses PG, Miao M, Yan Q, Van de Walle CG. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. The Journal of Chemical Physics. 134: 084703. PMID 21361552 DOI: 10.1063/1.3548872 |
0.71 |
|
2011 |
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van De Walle CG. Band parameters and strain effects in ZnO and group-III nitrides Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/1/014037 |
0.564 |
|
2011 |
Zhao Y, Tanaka S, Yan Q, Huang C, Chung RB, Pan C, Fujito K, Feezell D, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] Applied Physics Letters. 99: 229902. DOI: 10.1063/1.3665683 |
0.325 |
|
2011 |
Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560 |
0.351 |
|
2011 |
Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826 |
0.401 |
|
2010 |
Yan Q, Rinke P, Scheffler M, Van De Walle CG. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Applied Physics Letters. 97. DOI: 10.1063/1.3507289 |
0.504 |
|
2009 |
Yan Q, Rinke P, Scheffler M, Van De Walle CG. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN Applied Physics Letters. 95. DOI: 10.1063/1.3236533 |
0.539 |
|
2008 |
Yu J, Wu Z, Liu Z, Yan Q, Wu J, Duan W. Phase diagram of ferroelectric BaTiO3 ultrathin films under open-circuit conditions Journal of Physics: Condensed Matter. 20: 135203. DOI: 10.1088/0953-8984/20/13/135203 |
0.382 |
|
2007 |
Yan Q, Huang B, Yu J, Zheng F, Zang J, Wu J, Gu BL, Liu F, Duan W. Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping. Nano Letters. 7: 1469-73. PMID 17461605 DOI: 10.1021/Nl070133J |
0.405 |
|
2007 |
Liu H, Zhou G, Yan Q, Wu J, Gu B, Duan W, Zhao D. Structural and electronic properties of fluorinated double-walled boron nitride nanotubes: Effect of interwall interaction Physical Review B. 75. DOI: 10.1103/Physrevb.75.125410 |
0.321 |
|
2007 |
Huang B, Yan Q, Zhou G, Wu J, Gu B, Duan W, Liu F. Making a field effect transistor on a single graphene nanoribbon by selective doping Applied Physics Letters. 91: 253122. DOI: 10.1063/1.2826547 |
0.347 |
|
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