Yuh-Renn Wu, Ph.D. - Publications

2006 University of Michigan, Ann Arbor, Ann Arbor, MI 
Electronics and Electrical Engineering

99 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Horng RH, Sinha S, Wu YR, Tarntair FG, Han J, Wuu DS. Characterization of semi-polar (20[Formula: see text]1) InGaN microLEDs. Scientific Reports. 10: 15966. PMID 32994488 DOI: 10.1038/s41598-020-72720-1  0.324
2020 Chang CW, Wadekar PV, Huang HC, Chen QY, Wu YR, Chen RT, Tu LW. Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells. Nanoscale Research Letters. 15: 167. PMID 32816117 DOI: 10.1186/s11671-020-03392-z  0.323
2020 Chow YC, Lee C, Wong MS, Wu YR, Nakamura S, DenBaars SP, Bowers JE, Speck JS. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805. PMID 32752371 DOI: 10.1364/Oe.399924  0.427
2020 Yu C, Lin C, Wu Y. Analysis and Optimization of GaN Based Multi-Channels FinFETs Ieee Transactions On Nanotechnology. 19: 439-445. DOI: 10.1109/Tnano.2020.2998840  0.337
2020 Lynsky C, Alhassan AI, Lheureux G, Bonef B, DenBaars SP, Nakamura S, Wu Y, Weisbuch C, Speck JS. Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054604  0.415
2020 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, Speck JS. Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport Physical Review B. 101: 75305. DOI: 10.1103/Physrevb.101.075305  0.409
2020 Huang J, Wang M, Chen G, Li J, Chen S, Lee J, Chiu T, Wu Y. Analysis of the triplet exciton transfer mechanism at the heterojunctions of organic light-emitting diodes Journal of Physics D. 53: 345501. DOI: 10.1088/1361-6463/Ab8A94  0.327
2020 Tsai T, Michalczewski K, Martyniuk P, Wu C, Wu Y. Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system Journal of Applied Physics. 127: 33104. DOI: 10.1063/1.5131470  0.381
2019 Chen CC, Shiau SY, Wu MF, Wu YR. Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines. Scientific Reports. 9: 16251. PMID 31700001 DOI: 10.1038/S41598-019-52275-6  0.325
2019 Michalczewski K, Martyniuk P, Kubiszyn L, Wu C, Wu Y, Jurenczyk J, Rogalski A, Piotrowski J. Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling Ieee Electron Device Letters. 40: 1396-1398. DOI: 10.1109/Led.2019.2930106  0.305
2019 Huang J, Chang E, Wu Y. Optimization of MAPbI $_3$ -Based Perovskite Solar Cell With Textured Surface Ieee Journal of Photovoltaics. 9: 1686-1692. DOI: 10.1109/Jphotov.2019.2941170  0.341
2019 Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, DenBaars SP, Speck JS. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Applied Physics Letters. 114: 151103. DOI: 10.1063/1.5092585  0.448
2019 Chang L, Lin J, Dai C, Yang M, Jiang Y, Wu Y, Wu C. Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs Journal of Applied Physics. 125: 94502. DOI: 10.1063/1.5085275  0.366
2018 Chang WY, Kuo Y, Yao YF, Yang CC, Wu YR, Kiang YW. Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode. Optics Express. 26: 8340-8355. PMID 29715802 DOI: 10.1364/Oe.26.008340  0.369
2018 Chen H, Speck JS, Weisbuch C, Wu Y. Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations Applied Physics Letters. 113: 153504. DOI: 10.1063/1.5051081  0.44
2018 Huang C, Tai T, Lin J, Chang T, Liu C, Lu T, Wu Y, Kuo H. Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing Acs Photonics. 5: 2724-2729. DOI: 10.1021/Acsphotonics.8B00471  0.317
2018 Hsiao H, Wu Y. 3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects Physica Status Solidi (a). 216: 1800524. DOI: 10.1002/Pssa.201800524  0.379
2017 Su CY, Tsai MC, Chou KP, Chiang HC, Lin HH, Su MY, Wu YR, Kiang YW, Yang CC. Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well. Optics Express. 25: 26365-26377. PMID 29092128 DOI: 10.1364/Oe.25.026365  0.438
2017 Kung TJ, Huang JY, Huang JJ, Tseng SH, Leung MK, Chiu TL, Lee JH, Wu YR. Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation. Optics Express. 25: 25492-25503. PMID 29041216 DOI: 10.1364/Oe.25.025492  0.444
2017 Su C, Tu C, Liu W, Lin C, Yao Y, Chen H, Wu Y, Kiang Y, Yang C. Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer Ieee Transactions On Electron Devices. 64: 3226-3233. DOI: 10.1109/Ted.2017.2711023  0.418
2017 Ho S, Lee C, Tzou A, Kuo H, Wu Y, Huang J. Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure Ieee Transactions On Electron Devices. 64: 1505-1510. DOI: 10.1109/Ted.2017.2657683  0.407
2017 Chen H, Su C, Tu C, Yao Y, Lin C, Wu Y, Kiang Y, Yang CCC. Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure Ieee Transactions On Electron Devices. 64: 115-120. DOI: 10.1109/Ted.2016.2631148  0.369
2017 Li C, Piccardo M, Lu L, Mayboroda S, Martinelli L, Peretti J, Speck JS, Weisbuch C, Filoche M, Wu Y. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Physical Review B. 95. DOI: 10.1103/Physrevb.95.144206  0.315
2017 Piccardo M, Li C, Wu Y, Speck JS, Bonef B, Farrell RM, Filoche M, Martinelli L, Peretti J, Weisbuch C. Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Physical Review B. 95: 144205. DOI: 10.1103/Physrevb.95.144205  0.394
2017 Browne DA, Fireman MN, Mazumder B, Kuritzky LY, Wu Y, Speck JS. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition Semiconductor Science and Technology. 32: 25010. DOI: 10.1088/1361-6641/32/2/025010  0.353
2017 Chen S, Wu Y. A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons Applied Physics Letters. 110: 201109. DOI: 10.1063/1.4983721  0.352
2017 Huang J, Yun L, Kung T, Chen C, Lee J, Wu Y, Chiu T, Chou P, Leung M. Networking hole and electron hopping paths by Y-shaped host molecules: promoting blue phosphorescent organic light emitting diodes Journal of Materials Chemistry C. 5: 3600-3608. DOI: 10.1039/C6Tc05538A  0.359
2017 Cheng C, Huang T, Wu C, Chen MK, Chu CH, Wu Y, Shih M, Lee C, Kuo H, Tsai DP, Lin G. Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates Journal of Materials Chemistry C. 5: 607-617. DOI: 10.1039/C6Tc04318F  0.405
2017 Chen S, Wu Y. Electronic properties of MoS2 nanoribbon with strain using tight-binding method Physica Status Solidi B-Basic Solid State Physics. 254: 1600565. DOI: 10.1002/Pssb.201600565  0.303
2016 Ho K, Lu I, Wu Y. Development of numerical modeling program for organic/inorganic hybrid solar cells by including tail/Interfacial states models Proceedings of Spie. 9743: 974308. DOI: 10.1117/12.2211904  0.373
2016 Ho K, Li C, Syu H, Lai Y, Lin C, Wu Y. Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model Journal of Applied Physics. 120: 215501. DOI: 10.1063/1.4970827  0.339
2016 Wu C, Wu Y. Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure Aip Advances. 6: 115201. DOI: 10.1063/1.4967202  0.327
2015 Chen X, Ho KY, Wu YR. Modeling and optimization of p-AlGaN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs. Optics Express. 23: 32367-76. PMID 26699026 DOI: 10.1364/Oe.23.032367  0.354
2015 Chen X, Wu Y. Numerical study of current spreading and light extraction in deep UV light-emitting diode Proceedings of Spie. 9383. DOI: 10.1117/12.2078752  0.409
2015 Lee F, Su L, Wang C, Wu Y, Huang J. Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors Ieee Electron Device Letters. 36: 232-234. DOI: 10.1109/Led.2015.2395454  0.406
2015 Browne DA, Mazumder B, Wu YR, Speck JS. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH<inf>3</inf> molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4919750  0.493
2015 Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647  0.354
2015 Wu C, Li C, Wu Y. Percolation transport study in nitride based LED by considering the random alloy fluctuation Journal of Computational Electronics. 14: 416-424. DOI: 10.1007/S10825-015-0688-Y  0.454
2014 Lai KY, Lin GJ, Wu YR, Tsai ML, He JH. Efficiency dip observed with InGaN-based multiple quantum well solar cells. Optics Express. 22: A1753-60. PMID 25607489 DOI: 10.1364/Oe.22.0A1753  0.402
2014 Zhao Y, Farrell RM, Wu Y, Speck JS. Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices Japanese Journal of Applied Physics. 53: 100206. DOI: 10.7567/Jjap.53.100206  0.341
2014 Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503  0.374
2014 Yang T, Speck JS, Wu Y. Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model Proceedings of Spie. 8986. DOI: 10.1117/12.2039374  0.418
2014 Li C, Rosmeulen M, Simoen E, Wu Y. Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs Ieee Transactions On Electron Devices. 61: 511-517. DOI: 10.1109/Ted.2013.2294534  0.411
2014 Chen HS, Lin CH, Shih PY, Hsieh C, Su CY, Wu YR, Kiang YW, Yang CC. Thermal effects in a bendable InGaN/GaN quantum-well light-emitting diode Ieee Photonics Technology Letters. 26: 1442-1445. DOI: 10.1109/Lpt.2014.2326679  0.429
2014 Li H, Yin Y, Chang C, Tsai C, Hsu Y, Lin D, Wu Y, Kuo H, Huang JJ. Mechanisms of the Asymmetric Light Output Enhancements in \(a\) -Plane GaN Light-Emitting Diodes With Photonic Crystals Ieee Journal of Quantum Electronics. 50: 1-6. DOI: 10.1109/Jqe.2014.2362552  0.392
2014 Yang T, Shivaraman R, Speck JS, Wu Y. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Journal of Applied Physics. 116: 113104. DOI: 10.1063/1.4896103  0.471
2014 Wu CW, Wu YR. Thermoelectric characteristic of the rough InN/GaN core-shell nanowires Journal of Applied Physics. 116. DOI: 10.1063/1.4894510  0.344
2014 Chou Y, Li H, Yin Y, Wang Y, Lin Y, Lin D, Wu Y, Kuo H, Huang JJ. Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals Journal of Applied Physics. 115: 193107. DOI: 10.1063/1.4876655  0.353
2014 Kyle ECH, Kaun SW, Burke PG, Wu F, Wu YR, Speck JS. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115. DOI: 10.1063/1.4874735  0.358
2014 Lee CY, Yeh CM, Liu YT, Fan CM, Huang CF, Wu YR. The optimization study of textured a-Si:H solar cells Journal of Renewable and Sustainable Energy. 6. DOI: 10.1063/1.4870993  0.317
2013 Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08  0.371
2013 Chi K, Yeh S, Yeh Y, Lin K, Shi J, Wu Y, Lee ML, Sheu J. GaN-Based Dual-Color LEDs With $p$ -Type Insertion Layer for Controlling the Ratio of Two-Color Intensities Ieee Transactions On Electron Devices. 60: 2821-2826. DOI: 10.1109/Ted.2013.2272803  0.437
2013 Chen L, Li C, Tan J, Huang L, Wu Y, Huang JJ. On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays Ieee Journal of Quantum Electronics. 49: 224-231. DOI: 10.1109/Jqe.2013.2237885  0.457
2013 Wang H, Yu P, Wu Y, Kuo H, Chang EY, Lin S. Projected Efficiency of Polarization-Matched p-In$_{\bm x}$Ga$_{\bm {1-x}}$N/i-In $_{\bm y}$Ga$_{\bm{1-y}}$N/n-GaN Double Heterojunction Solar Cells Ieee Journal of Photovoltaics. 3: 985-990. DOI: 10.1109/Jphotov.2013.2252953  0.375
2013 Lee J, Wu Z, Liao Y, Wu Y, Lin S, Lee S. The operation principle of the well in quantum dot stack infrared photodetector Journal of Applied Physics. 114: 244504. DOI: 10.1063/1.4849875  0.437
2013 Li C, Yeh P, Yu J, Peng L, Wu Y. Scaling performance of Ga2O3/GaN nanowire field effect transistor Journal of Applied Physics. 114: 163706. DOI: 10.1063/1.4827190  0.381
2013 Pal J, Migliorato MA, Li CK, Wu YR, Crutchley BG, Marko IP, Sweeney SJ. Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management Journal of Applied Physics. 114. DOI: 10.1063/1.4818794  0.307
2013 Chen C, Wu Y. Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors Journal of Applied Physics. 113: 214501. DOI: 10.1063/1.4808241  0.425
2013 Li CK, Yang HC, Hsu TC, Shen YJ, Liu AS, Wu YR. Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Journal of Applied Physics. 113. DOI: 10.1063/1.4804415  0.457
2012 Senanayake P, Hung CH, Farrell A, Ramirez DA, Shapiro J, Li CK, Wu YR, Hayat MM, Huffaker DL. Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. Nano Letters. 12: 6448-52. PMID 23206195 DOI: 10.1021/Nl303837Y  0.392
2012 Yu JW, Wu YR, Peng LH. Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.912041  0.376
2012 Wang K, Wu Y. Intersubband and intrasubband transition in InGaN quantum dot for solar cell application Proceedings of Spie. 8256. DOI: 10.1117/12.908674  0.381
2012 Li C, Wu Y. Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs Ieee Transactions On Electron Devices. 59: 400-407. DOI: 10.1109/Ted.2011.2176132  0.398
2012 Lang JR, Young NG, Farrell RM, Wu YR, Speck JS. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4765068  0.466
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.427
2012 Wu Y, Shivaraman R, Wang K, Speck JS. Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Applied Physics Letters. 101: 83505. DOI: 10.1063/1.4747532  0.447
2012 Wang CP, Wu YR. Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode Journal of Applied Physics. 112. DOI: 10.1063/1.4742050  0.415
2012 Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106  0.331
2011 Chen LY, Huang HH, Chang CH, Huang YY, Wu YR, Huang J. Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays. Optics Express. 19: A900-7. PMID 21747560 DOI: 10.1364/Oe.19.00A900  0.404
2011 Chen M, Wu Y. Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1352  0.309
2011 Huang H, Wu Y. Study of thermoelectric properties of InGaN/GaN superlattice Mrs Proceedings. 1329. DOI: 10.1557/Opl.2011.1235  0.361
2011 Li C, Wu Y. Current spreading effect in vertical GaN/InGaN LEDs Proceedings of Spie. 7939. DOI: 10.1117/12.877663  0.392
2011 Sun Y, Cheng Y, Wang S, Huang Y, Chang C, Yang S, Chen L, Ke M, Li C, Wu Y, Huang J. Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing Ieee Electron Device Letters. 32: 182-184. DOI: 10.1109/Led.2010.2093503  0.439
2011 Lu I, Wu Y, Singh J. Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method Physica Status Solidi (C). 8: 2393-2395. DOI: 10.1002/Pssc.201001054  0.598
2011 Huang H, Lu I, Wu Y. Study of thermoelectric properties of indium nitride nanowire Physica Status Solidi (a). 208: 1562-1565. DOI: 10.1002/Pssa.201001047  0.38
2010 Huang C, Chin H, Wu Y, Cheng I, Chen JZ, Chiu K, Lin T. Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layers With Modulation Doping and Polarization Effects Ieee Transactions On Electron Devices. 57: 696-703. DOI: 10.1109/Ted.2009.2039527  0.401
2010 Chang C, Wu Y. Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells Ieee Journal of Quantum Electronics. 46: 884-889. DOI: 10.1109/Jqe.2010.2040515  0.424
2010 Yu JW, Wu YR, Huang JJ, Peng LH. 75GHz Ga2O3/GaN single nanowire metal-oxide- semiconductor field-effect transistors Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619673  0.375
2010 Lu I, Wu Y, Singh J. A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method Journal of Applied Physics. 108: 124508. DOI: 10.1063/1.3524544  0.614
2010 Dang PY, Wu YR. Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers Journal of Applied Physics. 108. DOI: 10.1063/1.3498805  0.407
2010 Chin H, Cheng I, Huang C, Wu Y, Lu W, Lee W, Chen JZ, Chiu K, Lin T. Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process Journal of Applied Physics. 108: 54503. DOI: 10.1063/1.3475500  0.384
2010 Huang H, Wu Y. Light emission polarization properties of semipolar InGaN/GaN quantum well Journal of Applied Physics. 107: 53112. DOI: 10.1063/1.3327794  0.445
2010 Huang H, Wu Y. Light emission polarization properties of strained (11$ \bar 2 $2) semipolar InGaN quantum well Physica Status Solidi (C). 7: 1859-1862. DOI: 10.1002/Pssc.201083456  0.447
2009 Chin H, Huang C, Wu Y, Cheng I, Chen JZ, Chiu K, Lin T. Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure Mrs Proceedings. 1201. DOI: 10.1557/Proc-1201-H04-05  0.337
2009 Pan K, Cheng Y, Chen L, Huang Y, Ke M, Chen C, Wu Y, Huang J. Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays Ieee Photonics Technology Letters. 21: 1683-1685. DOI: 10.1109/Lpt.2009.2031682  0.379
2009 Wu Y, Chiu C, Chang C, Yu P, Kuo H. Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs Ieee Journal of Selected Topics in Quantum Electronics. 15: 1226-1233. DOI: 10.1109/Jstqe.2009.2015583  0.393
2009 Huang H, Wu Y. Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes Journal of Applied Physics. 106: 23106. DOI: 10.1063/1.3176964  0.474
2009 Wu Y, Lin Y, Huang H, Singh J. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting Journal of Applied Physics. 105: 13117. DOI: 10.1063/1.3065274  0.642
2008 Yu P, Tsai M, Chiu C, Kuo H, Wu Y. Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Proceedings of Spie. 7135. DOI: 10.1117/12.804065  0.382
2008 Wu Y, Hinckley JM, Singh J. Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption Journal of Electronic Materials. 37: 578-584. DOI: 10.1007/S11664-007-0320-4  0.58
2007 Wu Y, Singh J. Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance Journal of Applied Physics. 101: 113712. DOI: 10.1063/1.2745286  0.564
2006 Wu Y, Singh M, Singh J. Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length Ieee Transactions On Electron Devices. 53: 588-593. DOI: 10.1109/Ted.2006.870571  0.663
2005 Wu Y, Singh M, Singh J. Sources of transconductance collapse in III-V nitrides - consequences of velocity-field relations and source/gate design Ieee Transactions On Electron Devices. 52: 1048-1054. DOI: 10.1109/Ted.2005.848084  0.666
2005 Singh M, Wu Y, Singh J. Velocity overshoot effects and scaling issues in III-V nitrides Ieee Transactions On Electron Devices. 52: 311-316. DOI: 10.1109/Ted.2005.843966  0.678
2005 Wu Y, Singh J. Polar heterostructure for multifunction devices: theoretical studies Ieee Transactions On Electron Devices. 52: 284-293. DOI: 10.1109/Ted.2004.842546  0.444
2004 Wu Y, Singh J. Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors Applied Physics Letters. 85: 1223-1225. DOI: 10.1063/1.1784039  0.561
2003 Wu Y, Singh M, Singh J. Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y11.1  0.735
2003 Wu Y, Singh M, Singh J. Gate leakage suppression and contact engineering in nitride heterostructures Journal of Applied Physics. 94: 5826-5831. DOI: 10.1063/1.1618926  0.744
2003 Singh M, Wu Y, Singh J. Examination of LiNbO3/nitride heterostructures Solid-State Electronics. 47: 2155-2159. DOI: 10.1016/S0038-1101(03)00189-8  0.706
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