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Joel B. Varley, Ph.D. - Publications

Affiliations: 
2011 Physics University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
semiconductor spintronics
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64 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Swallow JEN, Palgrave RG, Murgatroyd PAE, Regoutz A, Lorenz M, Hassa A, Grundmann M, von Wenckstern H, Varley JB, Veal TD. Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors. Acs Applied Materials & Interfaces. PMID 33426870 DOI: 10.1021/acsami.0c16021  0.308
2020 Zimmermann C, Rønning V, Frodason YK, Bobal V, Vines L, Varley JB. Primary intrinsic defects and their charge transition levels in β–Ga2O3 Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.074605  0.338
2020 Ha V, Karasulu B, Maezono R, Brunin G, Varley JB, Rignanese G, Monserrat B, Hautier G. Boron phosphide as a p -type transparent conductor: Optical absorption and transport through electron-phonon coupling Physical Review Materials. 4: 65401. DOI: 10.1103/Physrevmaterials.4.065401  0.373
2020 Nardone M, Patikirige Y, Kweon KE, Walkons C, Friedlmeier TM, Varley JB, Lordi V, Bansal S. Quantifying Large Lattice Relaxations in Photovoltaic Devices Physical Review Applied. 13: 24025. DOI: 10.1103/Physrevapplied.13.024025  0.347
2020 Zimmermann C, Kalmann Frodason Y, Rønning V, Varley JB, Vines L. Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3 New Journal of Physics. 22: 063033. DOI: 10.1088/1367-2630/Ab8E5B  0.412
2020 Saleh M, Varley JB, Jesenovec J, Bhattacharyya A, Krishnamoorthy S, Swain S, Lynn K. Degenerate doping in β-Ga2O3 single crystals through Hf-doping Semiconductor Science and Technology. 35: 04LT01. DOI: 10.1088/1361-6641/Ab75A6  0.36
2020 Samanta A, Varley JB, Lordi V. The role of water vapor during the synthesis of hydrogen doped In 2 O 3 Applied Physics Letters. 117: 62103. DOI: 10.1063/5.0011975  0.352
2020 Varley JB, Perron A, Lordi V, Wickramaratne D, Lyons JL. Prospects for n-type doping of (AlxGa1−x)2O3 alloys Applied Physics Letters. 116: 172104. DOI: 10.1063/5.0006224  0.391
2020 Frodason YK, Johansen KM, Vines L, Varley JB. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3 Journal of Applied Physics. 127: 075701. DOI: 10.1063/1.5140742  0.369
2020 Sharan A, Sabino FP, Janotti A, Gaillard N, Ogitsu T, Varley JB. Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations Journal of Applied Physics. 127: 65303. DOI: 10.1063/1.5140736  0.358
2020 Zimmermann C, Frodason YK, Barnard AW, Varley JB, Irmscher K, Galazka Z, Karjalainen A, Meyer WE, Auret FD, Vines L. Ti- and Fe-related charge transition levels in β − Ga 2 O 3 Applied Physics Letters. 116: 072101. DOI: 10.1063/1.5139402  0.337
2020 Jørgensen M, Shea PT, Tomich AW, Varley JB, Bercx M, Lovera S, Černý R, Zhou W, Udovic TJ, Lavallo V, Jensen TR, Wood BC, Stavila V. Understanding Superionic Conductivity in Lithium and Sodium Salts of Weakly Coordinating Closo-Hexahalocarbaborate Anions Chemistry of Materials. 32: 1475-1487. DOI: 10.1021/Acs.Chemmater.9B04383  0.301
2020 Swallow JEN, Vorwerk C, Mazzolini P, Vogt P, Bierwagen O, Karg A, Eickhoff M, Schörmann J, Wagner MR, Roberts JW, Chalker PR, Smiles MJ, Murgatroyd P, Razek SA, Lebens-Higgins ZW, ... ... Varley JB, et al. Influence of Polymorphism on the Electronic Structure of Ga2O3 Chemistry of Materials. 32: 8460-8470. DOI: 10.1021/Acs.Chemmater.0C02465  0.365
2019 Ranga P, Rishinaramangalam A, Varley J, Bhattacharyya A, Feezell D, Krishnamoorthy S. Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 12: 111004. DOI: 10.7567/1882-0786/Ab47B8  0.329
2019 Saleh M, Bhattacharyya A, Varley JB, Swain S, Jesenovec J, Krishnamoorthy S, Lynn K. Corrigendum: “Electrical and optical properties of Zr doped β-Ga2O3 single crystals” [Appl. Phys. Express 12, 085502 (2019)] Applied Physics Express. 12: 109301. DOI: 10.7567/1882-0786/Ab3C81  0.317
2019 Saleh M, Bhattacharyya A, Varley JB, Swain S, Jesenovec J, Krishnamoorthy S, Lynn K. Electrical and optical properties of Zr doped β-Ga2O3 single crystals Applied Physics Express. 12: 085502. DOI: 10.7567/1882-0786/Ab2B6C  0.38
2019 Johnson JM, Chen Z, Varley JB, Jackson CM, Farzana E, Zhang Z, Arehart AR, Huang H, Genc A, Ringel SA, Van de Walle CG, Muller DA, Hwang J. Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 Physical Review X. 9. DOI: 10.1103/Physrevx.9.041027  0.44
2019 Chatratin I, Sabino FP, Reunchan P, Limpijumnong S, Varley JB, Walle CGVd, Janotti A. Role of point defects in the electrical and optical properties of In2O3 Physical Review Materials. 3: 74604. DOI: 10.1103/Physrevmaterials.3.074604  0.313
2019 Peelaers H, Varley JB, Speck JS, Van de Walle CG. Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)] Applied Physics Letters. 115: 159901. DOI: 10.1063/1.5127763  0.34
2019 Farzana E, Mauze A, Varley JB, Blue TE, Speck JS, Arehart AR, Ringel SA. Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121102. DOI: 10.1063/1.5126463  0.412
2019 Bhandari S, Zvanut ME, Varley JB. Optical absorption of Fe in doped Ga2O3 Journal of Applied Physics. 126: 165703. DOI: 10.1063/1.5124825  0.344
2019 Peelaers H, Lyons JL, Varley JB, Van de Walle CG. Deep acceptors and their diffusion in Ga2O3 Apl Materials. 7: 022519. DOI: 10.1063/1.5063807  0.376
2019 Ingebrigtsen ME, Kuznetsov AY, Svensson BG, Alfieri G, Mihaila A, Badstübner U, Perron A, Vines L, Varley JB. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 Apl Materials. 7: 22510. DOI: 10.1063/1.5054826  0.404
2019 Swallow JEN, Varley JB, Jones LAH, Gibbon JT, Piper LFJ, Dhanak VR, Veal TD. Transition from electron accumulation to depletion at β-Ga2O3surfaces: The role of hydrogen and the charge neutrality level Apl Materials. 7: 022528. DOI: 10.1063/1.5054091  0.383
2018 Wang Y, Dickens PT, Varley JB, Ni X, Lotubai E, Sprawls S, Liu F, Lordi V, Krishnamoorthy S, Blair S, Lynn KG, Scarpulla M, Sensale-Rodriguez B. Incident wavelength and polarization dependence of spectral shifts in β-GaO UV photoluminescence. Scientific Reports. 8: 18075. PMID 30584263 DOI: 10.1038/S41598-018-36676-7  0.333
2018 Varley JB, Janotti A, Walle CGVd. Publisher's Note: Defects in AlN as candidates for solid-state qubits [Phys. Rev. B 93, 161201(R) (2016)] Physical Review B. 97: 39904. DOI: 10.1103/Physrevb.97.039904  0.322
2018 Lyons JL, Varley JB, Glaser ER, JAF, Culbertson JC, Tian F, Gamage GA, Sun H, Ziyaee H, Ren Z. Impurity-derived p-type conductivity in cubic boron arsenide Applied Physics Letters. 113: 251902. DOI: 10.1063/1.5058134  0.401
2018 Ritter JR, Huso J, Dickens PT, Varley JB, Lynn KG, McCluskey MD. Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3 Applied Physics Letters. 113: 052101. DOI: 10.1063/1.5044627  0.38
2018 Peelaers H, Varley JB, Speck JS, Walle CGVd. Structural and electronic properties of Ga 2 O 3 -Al 2 O 3 alloys Applied Physics Letters. 112: 242101. DOI: 10.1063/1.5036991  0.39
2018 Ingebrigtsen ME, Varley JB, Kuznetsov AY, Svensson BG, Alfieri G, Mihaila A, Badstübner U, Vines L. Iron and intrinsic deep level states in Ga2O3 Applied Physics Letters. 112: 042104. DOI: 10.1063/1.5020134  0.385
2018 Varley JB, Lordi V, Ogitsu T, Deangelis A, Horsley K, Gaillard N. Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations Journal of Applied Physics. 123: 161408. DOI: 10.1063/1.5006272  0.398
2017 Varley JB, Samanta A, Lordi V. Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels. The Journal of Physical Chemistry Letters. PMID 28961000 DOI: 10.1021/Acs.Jpclett.7B02333  0.434
2017 Lyons JL, Varley JB, Steiauf D, Janotti A, Walle CGVd. First-principles characterization of native-defect-related optical transitions in ZnO Journal of Applied Physics. 122: 35704. DOI: 10.1063/1.4992128  0.412
2017 Gul R, Roy UN, Camarda GS, Hossain A, Yang G, Vanier P, Lordi V, Varley J, James RB. A comparison of point defects in Cd1−xZnxTe1−ySeycrystals grown by Bridgman and traveling heater methods Journal of Applied Physics. 121: 125705. DOI: 10.1063/1.4979012  0.363
2017 Adelstein N, Lee D, DuBois JL, Ray KG, Varley JB, Lordi V. Magnetic stability of oxygen defects on the SiO2 surface Aip Advances. 7: 025110. DOI: 10.1063/1.4977194  0.327
2017 Kweon KE, Varley JB, Shea P, Adelstein N, Mehta P, Heo TW, Udovic TJ, Stavila V, Wood BC. Structural, Chemical, and Dynamical Frustration: Origins of Superionic Conductivity in closo-Borate Solid Electrolytes Chemistry of Materials. 29: 9142-9153. DOI: 10.1021/Acs.Chemmater.7B02902  0.33
2017 Varley JB, Miglio A, Ha V, Setten MJv, Rignanese G, Hautier G. High-Throughput Design of Non-oxide p-Type Transparent Conducting Materials: Data Mining, Search Strategy, and Identification of Boron Phosphide Chemistry of Materials. 29: 2568-2573. DOI: 10.1021/Acs.Chemmater.6B04663  0.336
2016 Varley JB, Janotti A, Van De Walle CG. Defects in AlN as candidates for solid-state qubits Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.161201  0.469
2016 Varley JB, Weber JR, Janotti A, Walle CGVd. Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)] Applied Physics Letters. 108: 39901. DOI: 10.1063/1.4940444  0.578
2016 Varley JB, Lordi V, He X, Rockett A. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics Journal of Applied Physics. 119. DOI: 10.1063/1.4939656  0.324
2016 Varley JB, Kweon K, Mehta P, Shea P, Heo TW, Udovic TJ, Stavila V, Wood BC. Understanding Ionic Conductivity Trends in Polyborane Solid Electrolytes from Ab Initio Molecular Dynamics Acs Energy Letters. 2: 250-255. DOI: 10.1021/Acsenergylett.6B00620  0.335
2015 Peelaers H, Steiauf D, Varley JB, Janotti A, Van De Walle CG. (InxGa1-x)2O3 alloys for transparent electronics Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.085206  0.367
2015 Varley JB, Schleife A. Bethe-Salpeter calculation of optical-absorption spectra of In2O3 and Ga2O3 Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/2/024010  0.367
2015 Gordon L, Varley JB, Lyons JL, Janotti A, Van de Walle CG. Sulfur doping of AlN and AlGaN for improved n-type conductivity Physica Status Solidi - Rapid Research Letters. DOI: 10.1002/Pssr.201510165  0.344
2015 Varley JB, Conway AM, Voss LF, Swanberg E, Graff RT, Nikolic RJ, Payne SA, Lordi V, Nelson AJ. Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors Physica Status Solidi (B) Basic Research. 252: 1266-1271. DOI: 10.1002/Pssb.201451662  0.348
2014 Janotti A, Varley JB, Choi M, Van De Walle CG. Vacancies and small polarons in SrTiO3 Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.085202  0.418
2014 Varley JB, Lordi V, Miglio A, Hautier G. Electronic structure and defect properties of B6 O from hybrid functional and many-body perturbation theory calculations: A possible ambipolar transparent conductor Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.045205  0.481
2014 Varley JB, Viswanathan V, Nørskov JK, Luntz AC. Lithium and oxygen vacancies and their role in Li2O2 charge transport in Li-O2 batteries Energy and Environmental Science. 7: 720-727. DOI: 10.1039/C3Ee42446D  0.316
2013 Schleife A, Varley JB, Fuchs F, Rödl C, Bechstedt F, Rinke P, Janotti A, Van de Walle CG. Erratum: Tin dioxide from first principles: Quasiparticle electronic states and optical properties [Phys. Rev. B83, 035116 (2011)] Physical Review B. 87. DOI: 10.1103/Physrevb.87.239901  0.339
2013 Varley JB, Schleife A, Janotti A, Van De Walle CG. Ambipolar doping in SnO Applied Physics Letters. 103. DOI: 10.1063/1.4819068  0.402
2013 Luntz AC, Viswanathan V, Voss J, Varley JB, Nørskov JK, Scheffler R, Speidel A. Tunneling and polaron charge transport through Li2O2 in Li-O2 batteries Journal of Physical Chemistry Letters. 4: 3494-3499. DOI: 10.1021/Jz401926F  0.311
2013 Janotti A, Franchini C, Varley JB, Kresse G, Van de Walle CG. Dual behavior of excess electrons in rutile TiO2 Physica Status Solidi - Rapid Research Letters. 7: 199-203. DOI: 10.1002/Pssr.201206464  0.387
2012 Varley JB, Janotti A, Franchini C, Van De Walle CG. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.081109  0.413
2011 Varley JB, Peelaers H, Janotti A, Van de Walle CG. Hydrogenated cation vacancies in semiconducting oxides. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 334212. PMID 21813965 DOI: 10.1088/0953-8984/23/33/334212  0.383
2011 Schleife A, Varley JB, Fuchs F, Rödl C, Bechstedt F, Rinke P, Janotti A, Van De Walle CG. Tin dioxide from first principles: Quasiparticle electronic states and optical properties Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.035116  0.426
2011 Janowitz C, Scherer V, Mohamed M, Krapf A, Dwelk H, Manzke R, Galazka Z, Uecker R, Irmscher K, Fornari R, Michling M, Schmeißer D, Weber JR, Varley JB, Van De Walle CG. Experimental electronic structure of In2O3 and Ga2O3 New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/8/085014  0.626
2011 Weber JR, Koehl WF, Varley JB, Janotti A, Buckley BB, Van De Walle CG, Awschalom DD. Defects in SiC for quantum computing Journal of Applied Physics. 109. DOI: 10.1063/1.3578264  0.688
2010 Weber JR, Koehl WF, Varley JB, Janotti A, Buckley BB, Van de Walle CG, Awschalom DD. Quantum computing with defects. Proceedings of the National Academy of Sciences of the United States of America. 107: 8513-8. PMID 20404195 DOI: 10.1073/Pnas.1003052107  0.678
2010 Hlaing Oo WM, Tabatabaei S, McCluskey MD, Varley JB, Janotti A, Van De Walle CG. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.193201  0.366
2010 Varley JB, Janotti A, Van De Walle CG. Group-V impurities in SnO2 from first-principles calculations Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245216  0.369
2010 Janotti A, Varley JB, Rinke P, Umezawa N, Kresse G, Van De Walle CG. Hybrid functional studies of the oxygen vacancy in TiO2 Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.085212  0.417
2010 Mohamed M, Janowitz C, Unger I, Manzke R, Galazka Z, Uecker R, Fornari R, Weber JR, Varley JB, Van De Walle CG. The electronic structure of β-Ga2O3 Applied Physics Letters. 97. DOI: 10.1063/1.3521255  0.621
2010 Varley JB, Weber JR, Janotti A, Van De Walle CG. Oxygen vacancies and donor impurities in β-Ga2 O 3 Applied Physics Letters. 97. DOI: 10.1063/1.3499306  0.63
2009 Varley JB, Janotti A, Singh AK, Van De Walle CG. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.245206  0.317
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