Christine M Jackson - Publications

Affiliations: 
Ohio State University, Columbus, Columbus, OH 

10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Ghadi H, McGlone JF, Jackson CM, Farzana E, Feng Z, Bhuiyan AFMAU, Zhao H, Arehart AR, Ringel SA. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111. DOI: 10.1063/1.5142313  0.377
2019 Sun W, Joh J, Krishnan S, Pendharkar S, Jackson CM, Ringel SA, Arehart AR. Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895. DOI: 10.1109/Ted.2018.2888840  0.372
2019 Johnson JM, Chen Z, Varley JB, Jackson CM, Farzana E, Zhang Z, Arehart AR, Huang H, Genc A, Ringel SA, Van de Walle CG, Muller DA, Hwang J. Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 Physical Review X. 9. DOI: 10.1103/Physrevx.9.041027  0.333
2018 Farzana E, Foronda HM, Jackson CM, Razzak T, Zhang Z, Speck JS, Arehart AR, Ringel SA. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies Journal of Applied Physics. 124: 145703. DOI: 10.1063/1.5050949  0.397
2018 Altermatt PP, Xiong Z, He Q, Deng W, Ye F, Yang Y, Chen Y, Feng Z, Verlinden PJ, Liu A, Macdonald DH, Luka T, Lausch D, Turek M, Hagendorf C, ... ... Jackson CM, et al. High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells Solar Energy. 175: 68-74. DOI: 10.1016/J.Solener.2018.01.073  0.305
2016 Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157  0.394
2016 Sasikumar A, Arehart AR, Cardwell DW, Jackson CM, Sun W, Zhang Z, Ringel SA. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Microelectronics Reliability. 56: 37-44. DOI: 10.1016/J.Microrel.2015.10.026  0.387
2014 Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/S11664-013-2942-Z  0.368
2013 Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102  0.369
2013 Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093  0.439
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