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Vincenzo Lordi, Ph.D. - Publications

Affiliations: 
2005 Stanford University, Palo Alto, CA 
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34 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Richardson CJK, Lordi V, Misra S, Shabani J. Materials science for quantum information science and technology Mrs Bulletin. 45: 485-497. DOI: 10.1557/Mrs.2020.147  0.374
2020 Nardone M, Patikirige Y, Kweon KE, Walkons C, Friedlmeier TM, Varley JB, Lordi V, Bansal S. Quantifying Large Lattice Relaxations in Photovoltaic Devices Physical Review Applied. 13: 24025. DOI: 10.1103/Physrevapplied.13.024025  0.329
2020 Varley JB, Perron A, Lordi V, Wickramaratne D, Lyons JL. Prospects for n-type doping of (AlxGa1−x)2O3 alloys Applied Physics Letters. 116: 172104. DOI: 10.1063/5.0006224  0.385
2018 Wang Y, Dickens PT, Varley JB, Ni X, Lotubai E, Sprawls S, Liu F, Lordi V, Krishnamoorthy S, Blair S, Lynn KG, Scarpulla M, Sensale-Rodriguez B. Incident wavelength and polarization dependence of spectral shifts in β-GaO UV photoluminescence. Scientific Reports. 8: 18075. PMID 30584263 DOI: 10.1038/S41598-018-36676-7  0.348
2018 Liu XY, Arslan I, Arey BW, Hackley J, Lordi V, Richardson CJK. Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays. Acs Nano. PMID 29932638 DOI: 10.1021/Acsnano.8B02065  0.325
2018 Varley JB, Lordi V, Ogitsu T, Deangelis A, Horsley K, Gaillard N. Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations Journal of Applied Physics. 123: 161408. DOI: 10.1063/1.5006272  0.357
2018 Kweon KE, Lordi V. First principles study of the structural, electronic, and optical properties of Sn2+-doped ZnO–P2O5 glasses Journal of Non-Crystalline Solids. 492: 108-114. DOI: 10.1016/J.Jnoncrysol.2018.04.016  0.335
2017 Varley JB, Samanta A, Lordi V. Descriptor-Based Approach for the Prediction of Cation Vacancy Formation Energies and Transition Levels. The Journal of Physical Chemistry Letters. PMID 28961000 DOI: 10.1021/Acs.Jpclett.7B02333  0.343
2017 Varley J, He X, Rockett AA, Lordi V. The stability of Cd1-xZnxOyS1-y quaternary alloys assessed with first-principles calculations. Acs Applied Materials & Interfaces. PMID 28176522 DOI: 10.1021/Acsami.6B14415  0.32
2017 Gul R, Roy UN, Camarda GS, Hossain A, Yang G, Vanier P, Lordi V, Varley J, James RB. A comparison of point defects in Cd1−xZnxTe1−ySeycrystals grown by Bridgman and traveling heater methods Journal of Applied Physics. 121: 125705. DOI: 10.1063/1.4979012  0.362
2016 Varley JB, Lordi V, He X, Rockett A. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics Journal of Applied Physics. 119. DOI: 10.1063/1.4939656  0.319
2015 Adelstein N, Olson CS, Lordi V. Hole traps in sodium silicate: First-principles calculations of the mobility edge Journal of Non-Crystalline Solids. 430: 9-15. DOI: 10.1016/J.Jnoncrysol.2015.08.032  0.363
2015 Varley JB, Conway AM, Voss LF, Swanberg E, Graff RT, Nikolic RJ, Payne SA, Lordi V, Nelson AJ. Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors (Phys. Status Solidi B 6/2015) Physica Status Solidi B-Basic Solid State Physics. 252. DOI: 10.1002/Pssb.201570337  0.315
2015 Varley JB, Conway AM, Voss LF, Swanberg E, Graff RT, Nikolic RJ, Payne SA, Lordi V, Nelson AJ. Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors Physica Status Solidi (B) Basic Research. 252: 1266-1271. DOI: 10.1002/Pssb.201451662  0.371
2013 Åberg D, Erhart P, Lordi V. Contributions of point defects, chemical disorder, and thermal vibrations to electronic properties of Cd1-xZnxTe alloys Physical Review B. 88: 45201. DOI: 10.1103/Physrevb.88.045201  0.381
2013 Varley JB, Lordi V. Electrical properties of point defects in CdS and ZnS Applied Physics Letters. 103. DOI: 10.1063/1.4819492  0.325
2013 Lordi V. Point defects in Cd(Zn)Te and TlBr: Theory Journal of Crystal Growth. 379: 84-92. DOI: 10.1016/J.Jcrysgro.2013.03.003  0.374
2012 Leão CR, Lordi V. Simultaneous control of ionic and electronic conductivity in materials: thallium bromide case study. Physical Review Letters. 108: 246604. PMID 23004304 DOI: 10.1103/Physrevlett.108.246604  0.353
2010 Erhart P, Åberg D, Sturm BW, Wu K, Lordi V. Theory-guided growth of aluminum antimonide single crystals with optimal properties for radiation detection Applied Physics Letters. 97: 142104. DOI: 10.1063/1.3499307  0.344
2009 Zaitseva NP, Newby J, Hamel S, Carman L, Faust M, Lordi V, Cherepy NJ, Stoeffl W, Payne SA. Neutron detection with single crystal organic scintillators Proceedings of Spie - the International Society For Optical Engineering. 7449. DOI: 10.1117/12.829870  0.302
2008 Vo TT, Williamson AJ, Lordi V, Galli G. Atomistic design of thermoelectric properties of silicon nanowires. Nano Letters. 8: 1111-4. PMID 18302325 DOI: 10.1021/Nl073231D  0.363
2008 Åberg D, Erhart P, Williamson AJ, Lordi V. Intrinsic point defects in aluminum antimonide Physical Review B. 77: 165206. DOI: 10.1103/Physrevb.77.165206  0.337
2007 Lordi V, Åberg D, Erhart P, Wu KJ. First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application Proceedings of Spie. 6706. DOI: 10.1117/12.739117  0.374
2007 Harris JS, Kudrawiec R, Yuen HB, Bank SR, Bae HP, Wistey MA, Jackrel D, Pickett ER, Sarmiento T, Goddard LL, Lordi V, Gugov T. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Physica Status Solidi (B) Basic Research. 244: 2707-2729. DOI: 10.1002/Pssb.200675620  0.586
2006 Hatami F, Masselink WT, Lordi V, Harris JS. Green emission from InP-GaP quantum-dot light-emitting diodes Ieee Photonics Technology Letters. 18: 895-897. DOI: 10.1109/Lpt.2006.872288  0.511
2006 Yang H, Lordi V, Harris JS. Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electronics Letters. 42: 52-54. DOI: 10.1049/El:20063572  0.667
2005 Bank SR, Wistey MA, Yuen HB, Lordi V, Gambin VF, Harris JS. Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1320. DOI: 10.1116/1.1878995  0.752
2005 Lordi V, Yuen HB, Bank SR, Wistey MA, Harris JS, Friedrich S. Nearest-neighbor distributions inGa1−xInxNyAs1−yandGa1−xInxNyAs1−y−zSbzthin films upon annealing Physical Review B. 71. DOI: 10.1103/Physrevb.71.125309  0.751
2005 Bank SR, Yuen HB, Wistey MA, Lordi V, Bae HP, Harris JS. Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs Applied Physics Letters. 87: 021908. DOI: 10.1063/1.1993772  0.742
2005 Hatami F, Lordi V, Harris JS, Kostial H, Masselink WT. Red light-emitting diodes based on InP∕GaP quantum dots Journal of Applied Physics. 97: 96106. DOI: 10.1063/1.1884752  0.561
2004 Bank SR, Wistey MA, Goddard LL, Yuen HB, Lordi V, Harris JS. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs Ieee Journal of Quantum Electronics. 40: 656-664. DOI: 10.1109/Jqe.2004.828249  0.72
2004 Lordi V, Yuen HB, Bank SR, Harris JS. Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300–1600nm Applied Physics Letters. 85: 902-904. DOI: 10.1063/1.1777825  0.771
2003 Lordi V, Gambin V, Friedrich S, Funk T, Takizawa T, Uno K, Harris JS. Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy. Physical Review Letters. 90: 145505. PMID 12731929 DOI: 10.1103/Physrevlett.90.145505  0.525
2003 Gambin V, Lordi V, Ha W, Wistey M, Takizawa T, Uno K, Friedrich S, Harris J. Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure Journal of Crystal Growth. 251: 408-411. DOI: 10.1016/S0022-0248(02)02194-2  0.726
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