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Ajay Raman, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.664
2012 Raman A, Hurni CA, Speck JS, Mishra UK. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy Physica Status Solidi (a). 209: 216-220. DOI: 10.1002/Pssa.201127169  0.4
2011 Dasgupta S, Nidhi, Raman A, Speck JS, Mishra UK. Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base Ieee Electron Device Letters. 32: 1212-1214. DOI: 10.1109/Led.2011.2158980  0.586
2010 Koblmüller G, Chu RM, Raman A, Mishra UK, Speck JS. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels Journal of Applied Physics. 107: 43527. DOI: 10.1063/1.3285309  0.511
2008 Raman A, Dasgupta S, Rajan S, Speck JS, Mishra UK. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Japanese Journal of Applied Physics. 47: 3359-3361. DOI: 10.1143/Jjap.47.3359  0.605
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