Christophe A. Hurni, Ph.D. - Publications

Affiliations: 
2012 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering

26 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 David A, Young NG, Hurni CA, Craven MD. Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.031001  0.389
2017 David A, Hurni CA, Young NG, Craven MD. Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells Applied Physics Letters. 111: 233501. DOI: 10.1063/1.5003112  0.383
2017 David A, Young NG, Hurni CA, Craven MD. All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation Applied Physics Letters. 110: 253504. DOI: 10.1063/1.4986908  0.343
2016 David A, Hurni CA, Young NG, Craven MD. Erratum: “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures” [Appl. Phys. Lett. 109, 033504 (2016)] Applied Physics Letters. 109: 99902. DOI: 10.1063/1.4962292  0.311
2016 David A, Hurni CA, Young NG, Craven MD. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling Applied Physics Letters. 109. DOI: 10.1063/1.4961491  0.375
2016 David A, Hurni CA, Young NG, Craven MD. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures Applied Physics Letters. 109. DOI: 10.1063/1.4959143  0.383
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  0.534
2015 Hurni CA, David A, Cich MJ, Aldaz RI, Ellis B, Huang K, Tyagi A, Delille RA, Craven MD, Steranka FM, Krames MR. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation Applied Physics Letters. 106. DOI: 10.1063/1.4905873  0.383
2014 David A, Hurni CA, Aldaz RI, Cich MJ, Ellis B, Huang K, Steranka FM, Krames MR. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4903297  0.328
2014 Hurni CA, Kroemer H, Mishra UK, Speck JS. M-plane (1010) and (2021) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling Applied Physics Letters. 105. DOI: 10.1063/1.4903180  0.464
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.458
2012 Browne DA, Young EC, Lang JR, Hurni CA, Speck JS. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4727967  0.658
2012 Mazumder B, Wong MH, Hurni CA, Zhang JY, Mishra UK, Speck JS. Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)] Applied Physics Letters. 101: 229902. DOI: 10.1063/1.4766344  0.36
2012 Zhang Z, Hurni CA, Arehart AR, Speck JS, Ringel SA. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4759037  0.354
2012 Hurni CA, Kroemer H, Mishra UK, Speck JS. Capacitance-voltage profiling on polar III-nitride heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4757940  0.518
2012 Hurni CA, Lang JR, Burke PG, Speck JS. Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4751108  0.665
2012 Mazumder B, Wong MH, Hurni CA, Zhang JY, Mishra UK, Speck JS. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4748116  0.429
2012 Hoi Wong M, Wu F, Hurni CA, Choi S, Speck JS, Mishra UK. Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source Applied Physics Letters. 100. DOI: 10.1063/1.3686922  0.498
2012 Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528  0.515
2012 Hurni CA, Choi S, Bierwagen O, Speck JS. Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films Applied Physics Letters. 100: 82106. DOI: 10.1063/1.3680102  0.483
2012 Raman A, Hurni CA, Speck JS, Mishra UK. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy Physica Status Solidi (a). 209: 216-220. DOI: 10.1002/Pssa.201127169  0.501
2011 Lang JR, Neufeld CJ, Hurni CA, Cruz SC, Matioli E, Mishra UK, Speck JS. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3575563  0.663
2010 Hurni CA, Bierwagen O, Lang JR, McSkimming BM, Gallinat CS, Young EC, Browne DA, Mishra UK, Speck JS. P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Applied Physics Letters. 97. DOI: 10.1063/1.3521388  0.68
2008 Hoffmann LK, Hurni CA, Schartner S, Mujagić E, Andrews AM, Klang P, Schrenk W, Semtsiv MP, Masselink WT, Strasser G. Wavelength dependent phase locking in quantum cascade laser Y-junctions Applied Physics Letters. 92: 61110. DOI: 10.1063/1.2841634  0.554
2008 Choi YS, Iza M, Koblmüller G, Hurni C, Speck JS, Weisbuch C, Hu EL. Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2306-2308. DOI: 10.1002/Pssc.200778720  0.474
2007 Hoffmann LK, Hurni CA, Schartner S, Austerer M, Mujagić E, Nobile M, Benz A, Schrenk W, Andrews AM, Klang P, Strasser G. Coherence in Y-coupled quantum cascade lasers Applied Physics Letters. 91: 161106. DOI: 10.1063/1.2800293  0.529
Show low-probability matches.