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Soojeong Choi, Ph.D. - Publications

Affiliations: 
2007 Duke University, Durham, NC 
Area:
Materials Science Engineering, Optics Physics, Condensed Matter Physics
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35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kudrawiec R, Janicki L, Linhart WM, Mayer MA, Sharp ID, Choi S, Bierwagen O, Speck JS, Walukiewicz W. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN Journal of Applied Physics. 126: 45712. DOI: 10.1063/1.5096528  0.379
2013 Choi S, Wu F, Bierwagen O, Speck JS. Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 31: 31504. DOI: 10.1116/1.4795811  0.343
2012 Bierwagen O, Choi S, Speck JS. Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer Physical Review B. 85: 165205. DOI: 10.1103/Physrevb.85.165205  0.352
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Publisher’s Note: “Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy” [Appl. Phys. Lett. 100, 232102 (2012)] Applied Physics Letters. 101: 49903. DOI: 10.1063/1.4740223  0.32
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Applied Physics Letters. 100: 232102. DOI: 10.1063/1.4725482  0.335
2012 Hoi Wong M, Wu F, Hurni CA, Choi S, Speck JS, Mishra UK. Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source Applied Physics Letters. 100. DOI: 10.1063/1.3686922  0.365
2012 Hurni CA, Choi S, Bierwagen O, Speck JS. Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films Applied Physics Letters. 100: 82106. DOI: 10.1063/1.3680102  0.314
2012 Kim T, Losurdo M, Choi S, Yoon I, Bruno G, Brown A. Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs Physica Status Solidi (C). 9: 1036-1039. DOI: 10.1002/Pssc.201100072  0.383
2011 Dasgupta S, Nidhi, Choi S, Wu F, Speck JS, Mishra UK. Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 4: 45502. DOI: 10.1143/Apex.4.045502  0.324
2011 Kaun SW, Wong MH, Dasgupta S, Choi S, Chung R, Mishra UK, Speck JS. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101. DOI: 10.1143/Apex.4.024101  0.378
2011 Bierwagen O, Choi S, Speck JS. Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN Physical Review B. 84: 235302. DOI: 10.1103/Physrevb.84.235302  0.347
2011 Mayer MA, Choi S, Bierwagen O, Smith HM, Haller EE, Speck JS, Walukiewicz W. Electrical and optical properties of p-type InN Journal of Applied Physics. 110. DOI: 10.1063/1.3670038  0.334
2009 Choi S, Kim T, Wu P, Brown A, Everitt HO, Losurdo M, Bruno G. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 107. DOI: 10.1116/1.3054345  0.606
2008 Choi S, Kim T, Wolter S, Brown A, Everitt HO, Losurdo M, Bruno G. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption Physical Review B. 77. DOI: 10.1103/Physrevb.77.115435  0.553
2007 Losurdo M, Kim T, Choi S, Wu P, Giangregorio MM, Bruno G, Brown A. Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1014. DOI: 10.1116/1.2737433  0.401
2007 Wu PC, Losurdo M, Kim T, Choi S, Bruno G, Brown AS. In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1019. DOI: 10.1116/1.2734163  0.352
2007 Choi S, Kim T, Everitt HO, Brown A, Losurdo M, Bruno G, Moto A. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 969. DOI: 10.1116/1.2720856  0.607
2007 Losurdo M, Giangregorio MM, Bruno G, Kim T, Wu P, Choi S, Brown A, Masia F, Capizzi M, Polimeni A. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy Applied Physics Letters. 90: 011910. DOI: 10.1063/1.2424664  0.409
2006 Foreman JV, Li J, Peng H, Choi S, Everitt HO, Liu J. Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders. Nano Letters. 6: 1126-30. PMID 16771566 DOI: 10.1021/Nl060204Z  0.569
2006 Choi S, Kim T, Brown A, Everitt HO, Losurdo M, Bruno G, Moto A. Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces Applied Physics Letters. 89: 181915. DOI: 10.1063/1.2372744  0.575
2006 Kim T, Choi S, Brown AS, Losurdo M, Bruno G. Impact of 4H– and 6H–SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy Applied Physics Letters. 89: 021916. DOI: 10.1063/1.2220007  0.443
2006 Losurdo M, Bruno G, Kim T, Choi S, Brown A. Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide Applied Physics Letters. 88: 121928. DOI: 10.1063/1.2190461  0.323
2006 Garcia MA, Wolter SD, Kim TH, Choi S, Baier J, Brown A, Losurdo M, Bruno G. Surface oxide relationships to band bending in GaN Applied Physics Letters. 88. DOI: 10.1063/1.2158701  0.356
2006 Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim T, Choi S. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN Applied Surface Science. 253: 219-223. DOI: 10.1016/J.Apsusc.2006.05.129  0.409
2006 Morse M, Wu P, Choi S, Kim T, Brown A, Losurdo M, Bruno G. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates Applied Surface Science. 253: 232-235. DOI: 10.1016/J.Apsusc.2006.05.097  0.397
2006 Kim T, Choi S, Wu P, Brown A, Losurdo M, Giangregorio MM, Bruno G, Moto A. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy Physica Status Solidi (C). 3: 1583-1586. DOI: 10.1002/Pssc.200565207  0.426
2006 Brown AS, Kim T, Choi S, Wu P, Morse M, Losurdo M, Giangregorio MM, Bruno G, Moto A. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy Physica Status Solidi (C). 3: 1531-1535. DOI: 10.1002/Pssc.200565150  0.388
2006 Losurdo M, Giangregorio MM, Bruno G, Kim T, Choi S, Brown A. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation Physica Status Solidi (a). 203: 1607-1611. DOI: 10.1002/Pssa.200565154  0.369
2005 Losurdo M, Giangregorio MM, Bruno G, Kim T, Wu P, Choi S, Morse M, Brown A, Masia F, Polimeni A, Capizzi M. Modification of InN Properties by Interactions with Hydrogen and Nitrogen Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff08-03  0.324
2005 Foreman JV, Peng H, Choi S, Everitt HO, Li J, Liu J. Bright, Eye-matched Visible Emission from ZnO Nanowires Frontiers in Optics. DOI: 10.1364/Fio.2005.Ftuf4  0.545
2005 Kim T, Choi S, Morse M, Wu P, Yi C, Brown A, Losurdo M, Giangregorio MM, Bruno G. Impact of unintentional and intentional nitridation of the 6H-SiC(0001)[sub Si] substrate on GaN epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1181. DOI: 10.1116/1.1878997  0.469
2005 Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Kim T, Choi S, Brown A. Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry The European Physical Journal Applied Physics. 31: 159-164. DOI: 10.1051/Epjap:2005056  0.369
2005 Losurdo M, Bruno G, Kim T, Choi S, Brown A, Moto A. Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H–SiC exploiting real time spectroscopic ellipsometry Journal of Crystal Growth. 284: 156-165. DOI: 10.1016/J.Jcrysgro.2005.07.016  0.367
2005 Brown AS, Losurdo M, Kim TH, Giangregorio MM, Choi S, Morse M, Wu P, Capezzuto P, Bruno G. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE Crystal Research and Technology. 40: 997-1002. DOI: 10.1002/Crat.200410475  0.458
2003 Ozgur U, Choi S, Everitt HO, He L, Morkoc H. Ultrafast carrier relaxation and stimulated emission in AlGaN/GaN multiple quantum wells Frontiers in Optics. DOI: 10.1364/Fio.2003.Thaa1  0.525
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