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Nirupam Hatui - Publications

Affiliations: 
2011-2016 Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research, Mumbai, Maharashtra, India 
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Hatui N, Krishna A, Pasayat SS, Keller S, Mishra UK. Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films Electronics. 10: 1182. DOI: 10.3390/ELECTRONICS10101182  0.339
2020 Romanczyk B, Li W, Guidry M, Hatui N, Krishna A, Wurm C, Keller S, Mishra UK. N-polar GaN-on-Sapphire Deep Recess HEMTs with High W-Band Power Density Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.3022401  0.314
2020 Liu W, Sayed I, Romanczyk B, Hatui N, Guidry M, Mitchell WJ, Keller S, Mishra UK. Ru/N-polar GaN Schottky diode with less than 2 μA/cm2 reverse current Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.3014524  0.308
2020 Shrestha P, Guidry M, Romanczyk B, Hatui N, Wurm C, Krishna A, Pasayat SS, Karnaty RR, Keller S, Buckwalter JF, Mishra UK. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Ieee Electron Device Letters. 41: 681-684. DOI: 10.1109/Led.2020.2980841  0.3
2020 Romanczyk B, Mishra UK, Zheng X, Guidry M, Li H, Hatui N, Wurm C, Krishna A, Ahmadi E, Keller S. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352. DOI: 10.1109/Led.2020.2967034  0.351
2020 Raj A, Krishna A, Hatui N, Gupta C, Jang R, Keller S, Mishra UK. Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current Ieee Electron Device Letters. 41: 220-223. DOI: 10.1109/Led.2019.2963428  0.317
2020 Hatui N, Krishna A, Li H, Gupta C, Romanczyk B, Acker-James D, Ahmadi E, Keller S, Mishra UK. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002. DOI: 10.1088/1361-6641/Ab9727  0.467
2020 Pasayat SS, Hatui N, Li W, Gupta C, Nakamura S, Denbaars SP, Keller S, Mishra UK. Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters. 117: 62102. DOI: 10.1063/5.0017948  0.413
2020 Krishna A, Raj A, Hatui N, Sayed I, Keller S, Mishra UK. Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors Applied Physics Letters. 117: 42104. DOI: 10.1063/5.0015290  0.375
2020 Wurm C, Ahmadi E, Wu F, Hatui N, Keller S, Speck J, Mishra U. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763. DOI: 10.1016/J.Ssc.2019.113763  0.465
2019 Krishna A, Raj A, Hatui N, Keller S, Mishra UK. Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors Applied Physics Letters. 115: 172105. DOI: 10.1063/1.5124326  0.404
2017 Lund C, Hestroffer K, Hatui N, Nakamura S, DenBaars SP, Mishra UK, Keller S. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates Applied Physics Express. 10: 111001. DOI: 10.7567/Apex.10.111001  0.349
2017 Gupta C, Chan SH, Agarwal A, Hatui N, Keller S, Mishra UK. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET Ieee Electron Device Letters. 38: 1575-1578. DOI: 10.1109/Led.2017.2756926  0.377
2016 Maliakkal CB, Hatui N, Bapat RD, Chalke BA, Rahman AA, Bhattacharya A. The Mechanism of Ni-Assisted GaN Nanowire Growth. Nano Letters. 16: 7632-7638. PMID 27960500 DOI: 10.1021/Acs.Nanolett.6B03604  0.773
2016 Maliakkal CB, Rahman AA, Hatui N, Chalke BA, Bapat RD, Bhattacharya A. Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates Journal of Crystal Growth. 439: 47-53. DOI: 10.1016/J.Jcrysgro.2015.12.044  0.783
2016 Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A. Direct MOVPE growth of semipolar (11 2¯ 2) AlxGa1-xN across the alloy composition range Journal of Crystal Growth. 437: 1-5. DOI: 10.1016/J.Jcrysgro.2015.12.009  0.795
2015 Maliakkal CB, Mathew JP, Hatui N, Rahman AA, Deshmukh MM, Bhattacharya A. Fabrication and characterization of GaN nanowire doubly clamped resonators Journal of Applied Physics. 118. DOI: 10.1063/1.4930088  0.746
2015 Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A. MOVPE growth of semipolar (112¯2) Al1-xInxN across the alloy composition range (0 ≤ x ≤ 0.55) Journal of Crystal Growth. 411: 106-109. DOI: 10.1016/J.Jcrysgro.2014.11.016  0.786
2013 Frentrup M, Hatui N, Wernicke T, Stellmach J, Bhattacharya A, Kneissl M. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction Journal of Applied Physics. 114. DOI: 10.1063/1.4834521  0.658
2013 Gupta P, Rahman AA, Hatui N, Parmar JB, Chalke BA, Bapat RD, Purandare SC, Deshmukh MM, Bhattacharya A. Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Applied Physics Letters. 103. DOI: 10.1063/1.4827539  0.767
2013 Arora A, Hatui N, Bhattacharya A, Ghosh S. Large exciton g-factors in anisotropically strained A-plane GaN film measured using magneto-optical Kerr effect spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4817399  0.596
2013 Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Journal of Crystal Growth. 372: 105-108. DOI: 10.1016/J.Jcrysgro.2013.03.020  0.783
2012 Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A. Optoelectronic devices based on III-N quantum wells grown on CVD graphene Photonics. 1-2. DOI: 10.1364/Photonics.2012.W3A.4  0.733
2011 Laskar MR, Ganguli T, Rahman AA, Arora A, Hatui N, Gokhale MR, Ghosh S, Bhattacharya A. Anisotropic structural and optical properties of a -plane (11 2- 0) AlInN nearly-lattice-matched to GaN Applied Physics Letters. 98. DOI: 10.1063/1.3583457  0.795
2011 Laskar MR, Ganguli T, Rahman AA, Mukherjee A, Hatui N, Gokhale MR, Bhattacharya A. Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content Journal of Applied Physics. 109. DOI: 10.1063/1.3525602  0.776
2011 Laskar MR, Ganguli T, Hatui N, Rahman AA, Gokhale MR, Bhattacharya A. High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Journal of Crystal Growth. 315: 208-210. DOI: 10.1016/J.Jcrysgro.2010.09.003  0.778
2011 Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A. Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Journal of Crystal Growth. 315: 233-237. DOI: 10.1016/J.Jcrysgro.2010.08.019  0.763
2010 Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A. Optimizationof a-plane (11̄2 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1̄1 02) sapphire Journal of Crystal Growth. 312: 2033-2037. DOI: 10.1016/J.Jcrysgro.2010.03.042  0.772
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