| Year |
Citation |
Score |
| 2020 |
Romanczyk B, Guidry M, Zheng X, Li H, Ahmadi E, Keller S, Mishra UK. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546. DOI: 10.1109/Ted.2020.2973081 |
0.799 |
|
| 2020 |
Romanczyk B, Mishra UK, Zheng X, Guidry M, Li H, Hatui N, Wurm C, Krishna A, Ahmadi E, Keller S. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352. DOI: 10.1109/Led.2020.2967034 |
0.81 |
|
| 2020 |
Li W, Pasayat SS, Guidry M, Romanczyk B, Zheng X, Gupta C, Hatui N, Keller S, Mishra UK. First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel Semiconductor Science and Technology. 35: 75007. DOI: 10.1088/1361-6641/Ab860A |
0.787 |
|
| 2018 |
Romanczyk B, Wienecke S, Guidry M, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50. DOI: 10.1109/Ted.2017.2770087 |
0.811 |
|
| 2018 |
Zheng X, Li H, Guidry M, Romanczyk B, Ahmadi E, Hestroffer K, Wienecke S, Keller S, Mishra UK. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412. DOI: 10.1109/Led.2018.2799160 |
0.766 |
|
| 2018 |
Li H, Wienecke S, Romanczyk B, Ahmadi E, Guidry M, Zheng X, Keller S, Mishra UK. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters. 112: 73501. DOI: 10.1063/1.5010944 |
0.767 |
|
| 2017 |
Ahmadi E, Koksaldi OS, Zheng X, Mates T, Oshima Y, Mishra UK, Speck JS. Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 71101. DOI: 10.7567/Apex.10.071101 |
0.75 |
|
| 2017 |
Wienecke S, Romanczyk B, Guidry M, Li H, Ahmadi E, Hestroffer K, Zheng X, Keller S, Mishra UK. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Ieee Electron Device Letters. 38: 359-362. DOI: 10.1109/Led.2017.2653192 |
0.804 |
|
| 2016 |
Wienecke S, Romanczyk B, Guidry M, Li H, Zheng X, Ahmadi E, Hestroffer K, Megalini L, Keller S, Mishra UK. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz Ieee Electron Device Letters. 37: 713-716. DOI: 10.1109/Led.2016.2556717 |
0.813 |
|
| 2016 |
Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/Led.2015.2502253 |
0.807 |
|
| 2016 |
Romanczyk B, Guidry M, Wienecke S, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters. 52: 1813-1814. DOI: 10.1049/El.2016.2664 |
0.811 |
|
| 2014 |
Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508 |
0.788 |
|
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