Year |
Citation |
Score |
2015 |
Korhonen E, Prozheeva V, Tuomisto F, Bierwagen O, Speck JS, White ME, Galazka Z, Liu H, Izyumskaya N, Avrutin V, Özgür, Morkoç H. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/2/024011 |
0.485 |
|
2015 |
Šermukšnis E, Liberis J, Ramonas M, Matulionis A, Toporkov M, Liu HY, Avrutin V, Özgür Ü, Morkoç H. Hot-electron energy relaxation time in Ga-doped ZnO films Journal of Applied Physics. 117: 065704. DOI: 10.1063/1.4907907 |
0.388 |
|
2015 |
Olson CS, Liu H, Ledyaev O, Hertog B, Osinsky A, Schoenfeld WV. High-gain Zn1-xMgx O-based ultraviolet photodetectors on Al2O3 and LiGaO2substrates Physica Status Solidi - Rapid Research Letters. 9: 82-86. DOI: 10.1002/Pssr.201409311 |
0.401 |
|
2014 |
Yankovich AB, Kvit AV, Li X, Zhang F, Avrutin V, Liu H, Izyumskaya N, Özgür Ü, Van Leer B, Morkoç H, Voyles PM. Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 20: 864-8. PMID 24667066 DOI: 10.1017/S1431927614000427 |
0.473 |
|
2014 |
Schoenfeld WV, Wei M, Boutwell RC, Liu H. High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045555 |
0.432 |
|
2012 |
McNamara JD, Ferguson JD, Foussekis M, Ruchala I, Reshchikov MA, Baski AA, Liu H, Avrutin V, Morkoç H. Surface characterization of Ga-doped ZnO layers Materials Research Society Symposium Proceedings. 1315: 77-82. DOI: 10.1557/Opl.2011.722 |
0.526 |
|
2012 |
Yankovich AB, Kvit AV, Liu HY, Li X, Zhang F, Avrutin V, Izyumskaya N, Özgür Ü, Morkoc H, Voyles PM. Pyramid nano-voids in GaN and InGaN Proceedings of Spie. 8262: 826205. DOI: 10.1117/12.912097 |
0.423 |
|
2012 |
McNamara JD, Foussekis M, Liu H, Morkoç H, Reshchikov MA, Baski AA. Temperature dependent behavior of the SPV for n-type GaN Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.910289 |
0.43 |
|
2012 |
Kvit AV, Yankovich AB, Avrutin V, Liu H, Izyumskaya N, Özgür Ü, Morkoç H, Voyles PM. Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy Journal of Applied Physics. 112: 123527. DOI: 10.1063/1.4769801 |
0.529 |
|
2012 |
Liu HY, Izyumskaya N, Avrutin V, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Morkoç H. Donor behavior of Sb in ZnO Journal of Applied Physics. 112: 033706. DOI: 10.1063/1.4742984 |
0.433 |
|
2012 |
Liu HY, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Morkoç H. Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy Journal of Applied Physics. 111: 103713. DOI: 10.1063/1.4720456 |
0.469 |
|
2012 |
Yankovich AB, Kvit AV, Li X, Zhang F, Avrutin V, Liu HY, Izyumskaya N, Özgür Ü, Morkoç H, Voyles PM. Hexagonal-based pyramid void defects in GaN and InGaN Journal of Applied Physics. 111: 023517. DOI: 10.1063/1.3679540 |
0.415 |
|
2012 |
Zhu C, Liu H, Avrutin V, Lu C, Özgür U, Morkoç H. BaSrTiO3/YIG microwave phase shifter with large two-degree-of-freedom tuning Electronics Letters. 48: 508. DOI: 10.1049/El.2012.0089 |
0.482 |
|
2012 |
Kvit A, Yankovich A, Puchala B, Morgan D, Voyles P, Avrutin V, Liu H, Izyumskaya N, Özgür U, Morkoç H. Structural and Elemental Analysis of Heavily- Doped ZnO Microscopy and Microanalysis. 18: 392-393. DOI: 10.1017/S1431927612003819 |
0.415 |
|
2011 |
Yankovich A, Kvit A, Li X, Zhang F, Avrutin V, Liu H, Izyumskaya N, Özgür Ü, Morkoc H, Voyles P. Indium Composition Variation in Nominally Uniform InGaN Layers Discovered by Aberration-Corrected Z-contrast STEM Microscopy and Microanalysis. 17: 1386-1387. DOI: 10.1017/S143192761100780X |
0.44 |
|
2011 |
Liu HY, Li X, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Morkoç H. InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN Physica Status Solidi (C). 8: 1548-1551. DOI: 10.1002/Pssc.201000860 |
0.559 |
|
2010 |
Leach JH, Liu H, Avrutin V, Rowe E, Özgür U, Morko̧ H, Song YY, Wu M. Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure Journal of Applied Physics. 108. DOI: 10.1063/1.3486463 |
0.6 |
|
2010 |
Leach JH, Liu H, Avrutin V, Xiao B, Özgür U, Morko̧ H, Das J, Song YY, Patton CE. Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5 Sr0.5 TiO3 on SrTiO3 Journal of Applied Physics. 107. DOI: 10.1063/1.3359707 |
0.61 |
|
2010 |
Liu H, Avrutin V, Izyumskaya N, Özgür Ü, Morkoç H. Transparent conducting oxides for electrode applications in light emitting and absorbing devices Superlattices and Microstructures. 48: 458-484. DOI: 10.1016/J.Spmi.2010.08.011 |
0.47 |
|
2010 |
Li X, Liu H, Ni X, Özgür Ü, Morkoç H. Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs Superlattices and Microstructures. 47: 118-122. DOI: 10.1016/J.Spmi.2009.07.022 |
0.528 |
|
2010 |
Liu H, Avrutin V, Xiao B, Rowe E, Liu H, Özgür Ü, Morkoç H. Epitaxial relationship of MBE grown barium hexaferrite (0001) films on sapphire (0001) Journal of Crystal Growth. 312: 671-675. DOI: 10.1016/J.Jcrysgro.2009.12.013 |
0.442 |
|
2010 |
Liu HY, Avrutin V, Izyumskaya N, Reshchikov MA, Özgür Ü, Morkoç H. Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE Physica Status Solidi (Rrl) - Rapid Research Letters. 4: 70-72. DOI: 10.1002/Pssr.200903410 |
0.444 |
|
2010 |
Li X, Liu HY, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Morkoç H. InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide Physica Status Solidi (a). 207: 1993-1996. DOI: 10.1002/Pssa.201026053 |
0.568 |
|
2009 |
Ni X, Li X, Liu H, Izyumskaya N, Avrutin V, Özgür Ü, Morkoç H, Paskova T, Mullholland G, Evans KR. On the Light Emission in GaN Based Heterostructures at High Injection Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I02-06 |
0.597 |
|
2009 |
Xiao B, Liu H, Avrutin V, Leach JH, Rowe E, Özgür U, Morkoç H, Chang W, Alldredge LMB, Kirchoefer SW, Pond JM. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO 3 thin films on a-plane sapphire with an MgO/ZnO bridge layer Applied Physics Letters. 95. DOI: 10.1063/1.3266862 |
0.661 |
|
2008 |
Xiao B, Avrutin V, Liu H, Özgür Ü, Morkoç H, Lu C. Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates Applied Physics Letters. 93: 052913. DOI: 10.1063/1.2969778 |
0.492 |
|
2007 |
Xiao B, Gu X, Izyumskaya N, Avrutin V, Xie J, Liu H, Morkoç H. Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer Applied Physics Letters. 91: 182908. DOI: 10.1063/1.2805220 |
0.655 |
|
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