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Derrick S. Kamber, Ph.D. - Publications

Affiliations: 
2008 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Jiang W, Ehrentraut D, Cook J, Kamber DS, Pakalapati RT, D'Evelyn MP. Transparent, conductive bulk GaN by high temperature ammonothermal growth Physica Status Solidi (B) Basic Research. 252: 1069-1074. DOI: 10.1002/Pssb.201451587  0.451
2014 Jiang W, Ehrentraut D, Kamber DS, Downey BC, Cook J, Grundmann M, Pakalapati RT, Yoo H, D'Evelyn MP. Ammonothermal bulk GaN substrates for LEDs Proceedings of Spie - the International Society For Optical Engineering. 9003. DOI: 10.1117/12.2042587  0.458
2014 Jiang W, Ehrentraut D, Downey BC, Kamber DS, Pakalapati RT, Yoo HD, D'Evelyn MP. Highly transparent ammonothermal bulk GaN substrates Journal of Crystal Growth. 403: 18-23. DOI: 10.1016/J.Jcrysgro.2014.06.002  0.416
2013 Ehrentraut D, Pakalapati RT, Kamber DS, Jiang W, Pocius DW, Downey BC, McLaurin M, D'Evelyn MP. High quality, low cost ammonothermal bulk GaN substrates Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Ja01  0.487
2013 D'Evelyn MP, Ehrentraut D, Jiang W, Kamber DS, Downey BC, Pakalapati RT, Yoo HD. Ammonothermal bulk GaN substrates for power electronics Ecs Transactions. 58: 287-294. DOI: 10.1149/05804.0287ecst  0.38
2011 Bryant BN, Kamber DS, Wu F, Nakamura S, Speck JS. Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1463-1466. DOI: 10.1002/Pssc.201000908  0.65
2010 Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003  0.585
2009 Newman SA, Kamber DS, Baker TJ, Wu Y, Wu F, Chen Z, Namakura S, Speck JS, Denbaars SP. Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy Applied Physics Letters. 94. DOI: 10.1063/1.3089253  0.701
2009 Saito M, Yamada H, Iso K, Sato H, Hirasawa H, Kamber DS, Hashimoto T, Denbaars SP, Speck JS, Nakamura S. Evaluation of GaN substrates grown in supercritical basic ammonia Applied Physics Letters. 94. DOI: 10.1063/1.3079813  0.66
2009 Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona TM, Kamber DS, Wu Y, Letts E, Newman SA, Nakamura S, Speck JS, Mishra UK, Denbaars SP, Onuma T, et al. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105. DOI: 10.1063/1.3079333  0.624
2008 Saito M, Kamber DS, Baker TJ, Fujito K, DenBaars SP, Speck JS, Nakamura S. Plane dependent growth of GaN in supercritical basic ammonia Applied Physics Express. 1: 1211031-1211033. DOI: 10.1143/Apex.1.121103  0.603
2007 Kamber DS, Wu Y, Letts E, Denbaars SP, Speck JS, Nakamura S, Newman SA. Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2716068  0.64
2006 Kamber DS, Wu Y, Haskell BA, Newman S, DenBaars SP, Speck JS, Nakamura S. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy Journal of Crystal Growth. 297: 321-325. DOI: 10.1016/J.Jcrysgro.2006.10.097  0.647
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