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Tadao Hashimoto, Ph.D. - Publications

Affiliations: 
2005 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Key D, Letts E, Tsou CW, Ji MH, Bakhtiary-Noodeh M, Detchprohm T, Shen SC, Dupuis R, Hashimoto T. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12. PMID 31207922 DOI: 10.3390/Ma12121925  0.781
2019 Hashimoto T, Letts ER, Key D, Jordan B. Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab06B3  0.793
2018 Letts E, Sun Y, Key D, Jordan B, Hashimoto T. X-ray characterization technique for the assessment of surface damage in GaN wafers Journal of Crystal Growth. 501: 13-17. DOI: 10.1016/J.Jcrysgro.2018.08.025  0.756
2016 Letts E, Key D, Hashimoto T. Reduction of crack density in ammonothermal bulk GaN growth Journal of Crystal Growth. 456: 27-32. DOI: 10.1016/J.Jcrysgro.2016.08.023  0.774
2014 Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T. Defect structure of a free standing GaN wafer grown by the ammonothermal method Journal of Crystal Growth. 406: 72-77. DOI: 10.1016/J.Jcrysgro.2014.08.022  0.777
2014 Letts E, Hashimoto T, Hoff S, Key D, Male K, Michaels M. Development of GaN wafers via the ammonothermal method Journal of Crystal Growth. 403: 3-6. DOI: 10.1016/J.Jcrysgro.2014.06.004  0.76
2012 Letts E, Hashimoto T, Ikari M, Nojima Y. Development of GaN wafers for solid-state lighting via the ammonothermal method Journal of Crystal Growth. 350: 66-68. DOI: 10.1016/J.Jcrysgro.2011.12.024  0.789
2011 Nojima Y, Ikari M, Letts E, Hashimoto T. Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method Journal of Crystal Growth. 317: 132-134. DOI: 10.1016/J.Jcrysgro.2011.01.019  0.789
2010 Hashimoto T, Letts E, Ikari M, Nojima Y. Improvement of crystal quality in ammonothermal growth of bulk GaN Journal of Crystal Growth. 312: 2503-2506. DOI: 10.1016/J.Jcrysgro.2010.04.002  0.799
2009 Saito M, Yamada H, Iso K, Sato H, Hirasawa H, Kamber DS, Hashimoto T, Denbaars SP, Speck JS, Nakamura S. Evaluation of GaN substrates grown in supercritical basic ammonia Applied Physics Letters. 94. DOI: 10.1063/1.3079813  0.771
2008 Hashimoto T, Wu F, Speck JS, Nakamura S. Ammonothermal growth of bulk GaN Journal of Crystal Growth. 310: 3907-3910. DOI: 10.1016/J.Jcrysgro.2008.06.005  0.591
2008 Hashimoto T, Wu F, Saito M, Fujito K, Speck JS, Nakamura S. Status and perspectives of the ammonothermal growth of GaN substrates Journal of Crystal Growth. 310: 876-880. DOI: 10.1016/J.Jcrysgro.2007.11.088  0.593
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. A GaN bulk crystal with improved structural quality grown by the ammonothermal method. Nature Materials. 6: 568-71. PMID 17603489 DOI: 10.1038/Nmat1955  0.594
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. Growth of Bulk GaN Crystals by the Basic Ammonothermal Method Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L889  0.568
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient Japanese Journal of Applied Physics. 46. DOI: 10.1143/Jjap.46.L525  0.523
2007 Chichibu SF, Onuma T, Hashimoto T, Fujito K, Wu F, Speck JS, Nakamura S. Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method Applied Physics Letters. 91: 251911. DOI: 10.1063/1.2825471  0.353
2007 Hashimoto T, Saito M, Fujito K, Wu F, Speck JS, Nakamura S. Seeded growth of GaN by the basic ammonothermal method Journal of Crystal Growth. 305: 311-316. DOI: 10.1016/J.Jcrysgro.2007.04.009  0.543
2006 Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S. Phase selection of microcrystalline GaN synthesized in supercritical ammonia Journal of Crystal Growth. 291: 100-106. DOI: 10.1016/J.Jcrysgro.2006.02.031  0.721
2005 Hashimoto T, Fujito K, Wu F, Haskell BA, Fini PT, Speck JS, Nakamura S. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia Materials Research Society Symposium Proceedings. 831: 81-86. DOI: 10.1557/Proc-831-E2.8  0.501
2005 Hashimoto T, Fujito K, Feng WU, Haskell BA, Fini PT, Speck JS, Nakamura S. Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia Japanese Journal of Applied Physics, Part 2: Letters. 44: L797-L799. DOI: 10.1143/Jjap.44.L797  0.521
2005 Hashimoto T, Fujito K, Saito M, Speck JS, Nakamura S. Ammonothermal Growth of GaN on an over-1-inch Seed Crystal Japanese Journal of Applied Physics. 44. DOI: 10.1143/Jjap.44.L1570  0.532
2005 Hashimoto T, Fujito K, Samonji K, Speck JS, Nakamura S. Growth of AlN by the Chemical Vapor Reaction Process Japanese Journal of Applied Physics. 44: 869-873. DOI: 10.1143/Jjap.44.869  0.513
2005 Hashimoto T, Fujito K, Haskell BA, Fini PT, Speck JS, Nakamura S. Growth of gallium nitride via fluid transport in supercritical ammonia Journal of Crystal Growth. 275: e525-e530. DOI: 10.1016/J.Jcrysgro.2004.11.024  0.506
2004 Fujito K, Hashimoto T, Samonji K, Speck JS, Nakamura S. Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates Journal of Crystal Growth. 272: 370-376. DOI: 10.1016/J.Jcrysgro.2004.08.079  0.483
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