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Safak Sayan, Ph.D. - Publications

Affiliations: 
2004 Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Physical Chemistry, Electronics and Electrical Engineering
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Sayan S, Vanelderen P, Hetel I, Chan B, Raghavan P, Blanco V, Foubert P, D'urzo L, Simone DD, Vandenberghe G. High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL Proceedings of Spie. 10143. DOI: 10.1117/12.2261741  0.315
2016 Simone DD, Sayan S, Dei S, Pollentier I, Kuwahara Y, Vandenberghe G, Nafus K, Shiratani M, Nakagawa H, Naruoka T. Novel metal containing resists for EUV lithography extendibility Proceedings of Spie. 9776: 977606. DOI: 10.1117/12.2220149  0.304
2016 Sayan S, Marzook T, Chan B, Vandenbroeck N, Singh A, Laidler D, Sanchez EA, Leray P, Delgadillo PR, Gronheid R, Vandenberghe G, Clark W, Juncker A. Toward sub-20nm pitch Fin patterning and integration with DSA Proceedings of Spie - the International Society For Optical Engineering. 9779. DOI: 10.1117/12.2220120  0.306
2016 Chiappe D, Asselberghs I, Sutar S, Iacovo S, Afanas'Ev V, Stesmans A, Balaji Y, Peters L, Heyne M, Mannarino M, Vandervorst W, Sayan S, Huyghebaert C, Caymax M, Heyns M, et al. Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500635  0.455
2015 Singh A, Knaepen W, Sayan S, El Otell Z, Chan BT, Maes JW, Gronheid R. Impact of sequential infiltration synthesis on pattern fidelity of DSA lines Proceedings of Spie - the International Society For Optical Engineering. 9425. DOI: 10.1117/12.2086091  0.322
2014 Sayan S, Chan BT, Gronheid R, Van Roey F, Min-Soo K, Williamson L, Nealey P. Directed self-assembly process integration - Fin patterning approaches and challenges Proceedings of Spie - the International Society For Optical Engineering. 9051. DOI: 10.1117/12.2047268  0.309
2014 Gronheid R, Bekaert J, Murugesan Kuppuswamy VK, Vandenbroeck N, Doise J, Cao Y, Lin G, Sayan S, Parnell D, Somervell M. Process optimization of templated DSA flows Proceedings of Spie - the International Society For Optical Engineering. 9051. DOI: 10.1117/12.2047266  0.302
2008 Sayan S, Chandler-Horowitz D, Nguyen NV, Ehrstein JR. High sensitivity attenuated total reflection Fourier transform infrared spectroscopy study of ultrathin Zr O2 films: A study of phase change Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 270-273. DOI: 10.1116/1.2830642  0.39
2008 Nguyen NV, Kirillov OA, Jiang W, Wang W, Suehle JS, Ye PD, Xuan Y, Goel N, Choi KW, Tsai W, Sayan S. Band offsets of atomic-layer-deposited Al2 O3 on GaAs and the effects of surface treatment Applied Physics Letters. 93. DOI: 10.1063/1.2976676  0.359
2007 Goncharova LV, Celik O, Gustafsson T, Garfunkel E, Warusawithana M, Schlom DG, Wen H, Santos MB, Sayan S, Tsai W, Goel N. Interface characterization in III-V CMOS nanoelectronics Ecs Transactions. 11: 117-122. DOI: 10.1149/1.2779553  0.514
2005 Mallett JJ, Svedberg EB, Sayan S, Shapiro AJ, Wielunski L, Madey TE, Chen PJ, Egelhoff WF, Moffat TP. Compositional control in electrodeposited CoxPt1-x films Electrochemical and Solid-State Letters. 8: C15-C18. DOI: 10.1149/1.1833651  0.385
2005 Nguyen NV, Sayan S, Levin I, Ehrstein JR, Baumvol IJR, Driemeier C, Krug C, Wielunski L, Hung PY, Diebold A. Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1706-1713. DOI: 10.1116/1.2091096  0.428
2005 Sayan S, Nguyen NV, Ehrstein J, Chambers JJ, Visokay MR, Quevedo-Lopez MA, Colombo L, Yoder D, Levin I, Fischer DA, Paunescu M, Celik O, Garfunkel E. Effect of nitrogen on band alignment in HfSiON gate dielectrics Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135390  0.699
2005 Sayan S, Croft M, Nguyen NV, Emge T, Ehrstein J, Levin I, Suehle J, Bartynski RA, Garfunkel E. The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks Aip Conference Proceedings. 788: 92-101. DOI: 10.1063/1.2062944  0.676
2005 Driemeier C, Bastos KP, Miotti L, Baumvol IJR, Nguyen NV, Sayan S, Krug C. Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1940130  0.431
2005 Sayan S, Nguyen NV, Ehrstein J, Emge T, Garfunkel E, Croft M, Zhao X, Vanderbilt D, Levin I, Gusev EP, Kim H, McIntyre PJ. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1864235  0.637
2005 Sanford NA, Munkholm A, Krames MR, Shapiro A, Levin I, Davydov AV, Sayan S, Wielunski LS, Madey TE. Refractive index and birefringence of inxGa1-xN films grown by MOCVD Physica Status Solidi C: Conferences. 2: 2783-2786. DOI: 10.1002/Pssc.200461606  0.394
2004 Mallett JJ, Svedberg EB, Sayan S, Shapiro AJ, Wielunski L, Madey TE, Egelhoff WF, Moffat TP. Compositional control in electrodeposition of FePt films Electrochemical and Solid-State Letters. 7: C121-C124. DOI: 10.1149/1.1792251  0.341
2004 Sayan S, Emge T, Garfunkel E, Zhao X, Wielunski L, Bartynski RA, Vanderbilt D, Suehle JS, Suzer S, Banaszak-Holl M. Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks Journal of Applied Physics. 96: 7485-7491. DOI: 10.1063/1.1803107  0.649
2004 Frank MM, Sayan S, Dörmann S, Emge TJ, Wielunski LS, Garfunkel E, Chabal YJ. Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 109: 6-10. DOI: 10.1016/J.Mseb.2003.10.020  0.62
2004 Sayan S, Bartynski RA, Zhao X, Gusev EP, Vanderbilt D, Croft M, Holl MB, Garfunkel E. Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study Physica Status Solidi (B) Basic Research. 241: 2246-2252. DOI: 10.1002/Pssb.200404945  0.616
2004 Sayan S, Bartynski RA, Robertson J, Suehle JS, Vogel E, Nguyen NV, Ehrstein J, Kopanski JJ, Suzer S, Holl MB, Garfunkel E. Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems Proceedings - Electrochemical Society. 1: 255-263.  0.547
2003 Suzer S, Sayan S, Banaszak Holl MM, Garfunkel E, Hussain Z, Hamdan NM. Soft x-ray photoemission studies of Hf oxidation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 106-109. DOI: 10.1116/1.1525816  0.602
2003 Sayan S, Goncharova L, Starodub D, Bartynski RA, Zhao X, Vanderbilt D, Gustafsson T, Garfunkel E. Interface composition and band alignment issues in high-K gate stacks 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 26. DOI: 10.1109/ISDRS.2003.1271978  0.635
2003 Sayan S, Garfunkel E, Nishimura T, Schulte WH, Gustafsson T, Wilk GD. Thermal decomposition behavior of the HfO2/SiO2/Si system Journal of Applied Physics. 94: 928-934. DOI: 10.1063/1.1578525  0.595
2002 Sayan S, Aravamudhan S, Busch BW, Schulte WH, Cosandey F, Wilk GD, Gustafsson T, Garfunkel E. Chemical vapor deposition of HfO2 films on Si(100) Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 507-512. DOI: 10.1116/1.1450584  0.606
2002 Sayan S, Garfunkel E, Suzer S. Soft x-ray photoemission studies of the HfO2/SiO2/Si system Applied Physics Letters. 80: 2135-2137. DOI: 10.1063/1.1450049  0.612
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