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Bahniman Ghosh, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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73 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Surana N, Ghosh B, Akram MW, Tripathi BMM. Differentially Graded Junctionless Transistor International Journal of Nanoscience. 18: 1850016. DOI: 10.1142/S0219581X18500163  0.302
2017 Goswami Y, Asthana P, Ghosh B. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications Journal of Semiconductors. 38: 54002. DOI: 10.1088/1674-4926/38/5/054002  0.365
2017 Ghosh B, Dey R, Register LF, Banerjee SK. A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator Journal of Computational Electronics. 16: 120-126. DOI: 10.1007/S10825-016-0951-X  0.587
2016 Agrawal P, Kumar R, Ghosh B. Multi-Layer Defect Characterization in Quantum-Dot Cellular Automata Circuits Quantum Matter. 5: 812-818. DOI: 10.1166/Qm.2016.1388  0.307
2016 Asthana PK, Goswami Y, Ghosh B. A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications Journal of Semiconductors. 37: 54002. DOI: 10.1088/1674-4926/37/5/054002  0.346
2016 Kumary TB, Ghosh B, Awadhiya B, Verma AK. Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys Journal of Semiconductors. 37: 14003. DOI: 10.1088/1674-4926/37/1/014003  0.326
2016 Ghosh B, Dey R, Register LF, Banerjee SK. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications Journal of Applied Physics. 120: 034303. DOI: 10.1063/1.4959089  0.566
2015 Goswami Y, Asthana P, Basak S, Ghosh B. Junctionless tunnel field effect transistor with nonuniform doping International Journal of Nanoscience. 14. DOI: 10.1142/S0219581X14500252  0.354
2015 Ghosh B, Solanki G. Voltage assisted control of spin-transfer nano-oscillators Journal of Semiconductors. 36. DOI: 10.1088/1674-4926/36/3/034004  0.314
2015 Gupta S, Ghosh B, Rahi SB. Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect Journal of Semiconductors. 36. DOI: 10.1088/1674-4926/36/2/024001  0.341
2015 Roy U, Dey R, Pramanik T, Ghosh B, Register LF, Banerjee SK. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator Journal of Applied Physics. 117. DOI: 10.1063/1.4918900  0.587
2015 Rahi SB, Ghosh B. High-k double gate junctionless tunnel FET with a tunable bandgap Rsc Advances. 5: 54544-54550. DOI: 10.1039/C5Ra06954H  0.363
2015 Asthana PK, Goswami Y, Basak S, Rahi SB, Ghosh B. Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications Rsc Advances. 5: 48779-48785. DOI: 10.1039/C5Ra03301B  0.363
2015 Ghosh B, Gramin A. First principle study of the effect of defects on performance of single-molecule pentacene field effect transistors Journal of Theoretical and Applied Physics. 9: 213-219. DOI: 10.1007/S40094-015-0182-8  0.341
2015 Ghosh B, Dwivedi K. Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs Journal of Theoretical and Applied Physics. 9: 207-212. DOI: 10.1007/S40094-015-0181-9  0.322
2015 Ghosh B, Dwivedi K. Micromagnetic analysis of a double-barrier synthetic antiferromagnetic MTJ stack Applied Nanoscience. 5: 771-775. DOI: 10.1007/S13204-014-0378-2  0.326
2015 Jain P, Prabhat V, Ghosh B. Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material Journal of Computational Electronics. 14: 537-542. DOI: 10.1007/S10825-015-0685-1  0.351
2015 Ghosh B, Kishor N. First principle defect study of MoSe2 field effect transistor Applied Physics B: Lasers and Optics. DOI: 10.1007/S00340-015-6058-4  0.315
2015 Mondal P, Ghosh B, Bal P, Akram MW, Salimath A. Effects of non-uniform doping on junctionless transistor Applied Physics a: Materials Science and Processing. 119: 127-132. DOI: 10.1007/S00339-015-9026-2  0.343
2014 Agrawal P, Ghosh B, Salimath AK. Defect Characterization and Their Effects on Performance of Quantum-Dot Cellular Automata Circuits Quantum Matter. 3: 114-118. DOI: 10.1166/Qm.2014.1102  0.304
2014 Salimath A, Ghosh B. Temperature, Confinement and Magnetic Field Dependence of Spin Transport in Ge Nanowire Quantum Matter. 3: 72-77. DOI: 10.1166/Qm.2014.1099  0.334
2014 Bhaker Y, Singh P, Ghosh B. Simulation of 2 Bit by 2 Bit Binary Multiplier Using Magnetic Tunnel Junction Device Journal of Low Power Electronics. 10: 580-583. DOI: 10.1166/Jolpe.2014.1358  0.34
2014 Ghosh B, Basak S, Asthana PK. Performance improvement in nanoscale Ge-GaAs Heterojunction Junctionless Tunnel FET using a Dual Material Gate Journal of Low Power Electronics. 10: 354-360. DOI: 10.1166/Jolpe.2014.1348  0.33
2014 Ghosh B, Gupta A. Spin Transport in Single Layer Germanene: The Role of Electron Electron Scattering Journal of Low Power Electronics. 10: 365-367. DOI: 10.1166/Jolpe.2014.1347  0.31
2014 Akram MW, Ghosh B. Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor Journal of Low Power Electronics. 10: 286-292. DOI: 10.1166/Jolpe.2014.1324  0.337
2014 Ghosh B, Ajay A. 2-Bit Full Adder Implementation Using Single Spin Logic Paradigm Journal of Low Power Electronics. 10: 214-219. DOI: 10.1166/Jolpe.2014.1313  0.312
2014 Chishti SS, Ghosh B, Verma A, Salimath AK. Spin Transport in Core–Shell Nanowires of Dilute Magnetic Semiconductors Journal of Nanoelectronics and Optoelectronics. 9: 44-49. DOI: 10.1166/Jno.2014.1545  0.329
2014 Chaudhary P, Salimath A, Ghosh B. Effect of magnon scattering on spin relaxation in Germanene Journal of Computational and Theoretical Nanoscience. 11: 2437-2439. DOI: 10.1166/Jctn.2014.3659  0.328
2014 Ghosh B, Ajay A, Salimath AK. 2-Bit Divider Circuit Implementation Using Single Spin Logic Paradigm Journal of Computational and Theoretical Nanoscience. 11: 2247-2250. DOI: 10.1166/Jctn.2014.3632  0.325
2014 Katiyar S, Ghosh B, Salimath A. Effect of electron-electron scattering on spin transport in trilayer graphene Journal of Computational and Theoretical Nanoscience. 11: 1983-1986. DOI: 10.1166/Jctn.2014.3597  0.317
2014 Asthana PK, Pal BK, Goswami Y, Basak S, Ghosh B. Ultra Thin Body Single Gate Nanoscale Dopingless Si:Ge Heterostructure Junctionless Tunnel Field Effect Transistor Journal of Advanced Physics. 3: 205-208. DOI: 10.1166/Jap.2014.1137  0.326
2014 Asthana PK, Ghosh B, Goswami Y, Tripathi BMM. High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect Transistor Ieee Transactions On Electron Devices. 61: 479-486. DOI: 10.1109/Ted.2013.2295238  0.367
2014 Akram MW, Ghosh B. Analog performance of double gate junctionless tunnel field effect transistor Journal of Semiconductors. 35: 74001. DOI: 10.1088/1674-4926/35/7/074001  0.374
2014 Ghosh B, Mondal P, Akram MW, Bal P, Salimath AK. Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime Journal of Semiconductors. 35: 64001. DOI: 10.1088/1674-4926/35/6/064001  0.314
2014 Bal P, Ghosh B, Mondal P, Akram MW. A laterally graded junctionless transistor Journal of Semiconductors. 35: 34003. DOI: 10.1088/1674-4926/35/3/034003  0.302
2014 Rahi SB, Ghosh B, Asthana P. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET Journal of Semiconductors. 35: 114005. DOI: 10.1088/1674-4926/35/11/114005  0.361
2014 Basak S, Asthana PK, Goswami Y, Ghosh B. Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor Journal of Semiconductors. 35. DOI: 10.1088/1674-4926/35/11/114001  0.331
2014 Akram MW, Ghosh B, Bal P, Mondal P. P-type double gate junctionless tunnel field effect transistor Journal of Semiconductors. 35: 14002. DOI: 10.1088/1674-4926/35/1/014002  0.332
2014 Kumar Asthana P, Goswami Y, Basak S, Ghosh B. A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/7/075017  0.351
2014 Ghosh B, Katiyar S, Salimath A. Role of electron-electron scattering on spin transport in single layer graphene Aip Advances. 4. DOI: 10.1063/1.4862674  0.329
2014 Asthana PK, Ghosh B, Rahi SBM, Goswami Y. Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications Rsc Advances. 4: 22803-22807. DOI: 10.1039/C4Ra00538D  0.35
2014 Goswami Y, Ghosh B, Asthana PK. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using III–V semiconductor Rsc Advances. 4: 10761-10765. DOI: 10.1039/C3Ra46535G  0.35
2014 Salimath AK, Ghosh B. Monte Carlo simulation studies of spin transport in graphene armchair nanoribbons Physica B-Condensed Matter. 450: 116-120. DOI: 10.1016/J.Physb.2014.05.044  0.335
2014 Salimath A, Ghosh B. Effect of electric field and magnetic field on spin transport in bilayer graphene armchair nanoribbons: A Monte Carlo simulation study Current Applied Physics. 14: 1526-1530. DOI: 10.1016/J.Cap.2014.08.028  0.34
2014 Hiranandani D, Ghosh B, Salimath AK. Effect of microscopic ripples on spin relaxation length in single-layer graphene Journal of Nanostructure in Chemistry. 4: 92. DOI: 10.1007/S40097-014-0092-3  0.343
2014 Bal P, Ghosh B, Mondal P, Akram MW, Tripathi BM. Dual material gate junctionless tunnel field effect transistor Journal of Computational Electronics. 13: 230-234. DOI: 10.1007/S10825-013-0505-4  0.345
2014 Bishnoi B, Ghosh B. Spin transport in N-armchair-edge silicene nanoribbons Journal of Computational Electronics. 13: 186-191. DOI: 10.1007/S10825-013-0498-Z  0.332
2014 Basak S, Asthana PK, Goswami Y, Ghosh B. Leakage current reduction in junctionless tunnel FET using a lightly doped source Applied Physics a: Materials Science and Processing. 118: 1527-1533. DOI: 10.1007/S00339-014-8935-9  0.355
2014 Khan U, Ghosh B, Akram W, Salimath A. A comparative study of SELBOX-JLT and SOI-JLT Applied Physics A. 117: 2281-2288. DOI: 10.1007/S00339-014-8661-3  0.348
2013 Ghosh B, Gupta S, Kumari S, Salimath A. Novel design of combinational and sequential logical structures in quantum dot cellular automata Journal of Nanostructure in Chemistry. 3: 1-9. DOI: 10.1186/2193-8865-3-15  0.31
2013 Goswami Y, Tripathi BMM, Asthana PK, Ghosh B. Junctionless Tunnel Field Effect Transistor with Enhanced Performance Using III–V Semiconductor Journal of Low Power Electronics. 9: 496-500. DOI: 10.1166/Jolpe.2013.1281  0.328
2013 Ghosh B, Khan U, Tripathi BMM, Akram MW. Ultrathin Compound Semiconductor in Bulk Planar Junctionless Transistor for High-Performance Nanoscale Transistors Journal of Low Power Electronics. 9: 490-495. DOI: 10.1166/Jolpe.2013.1280  0.312
2013 Surana N, Ghosh B, Tripathy BMM, Salimath AK. A Silicon Germanium Graded Junctionless Transistor With Low Off Current International Journal of Nanoscience. 12: 1350043. DOI: 10.1142/S0219581X13500439  0.319
2013 Ghosh B, Akram MW. Junctionless Tunnel Field Effect Transistor Ieee Electron Device Letters. 34: 584-586. DOI: 10.1109/Led.2013.2253752  0.382
2013 Mondal PP, Ghosh B, Bal P. Planar junctionless transistor with non-uniform channel doping Applied Physics Letters. 102: 133505. DOI: 10.1063/1.4801443  0.35
2013 Bal P, Akram MW, Mondal P, Ghosh B. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET) Journal of Computational Electronics. 12: 782-789. DOI: 10.1007/S10825-013-0483-6  0.376
2013 Banerjee A, Ghosh B. Circularly polarized spin current assisted fast resonant switching in magnetic tunnel junctions with perpendicular anisotropy Journal of Computational Electronics. 12: 476-480. DOI: 10.1007/S10825-013-0462-Y  0.353
2013 Salimath A, Ghosh B. Effect of temperature, electric and magnetic field on spin relaxation in bilayer graphene Journal of Computational Electronics. 12: 448-453. DOI: 10.1007/S10825-013-0453-Z  0.335
2013 Ghosh B, Bal P, Mondal P. A junctionless tunnel field effect transistor with low subthreshold slope Journal of Computational Electronics. 12: 428-436. DOI: 10.1007/S10825-013-0450-2  0.402
2012 Kumar A, Akram MW, Ghosh B. Spin Relaxation in Germanium Nanowires Nanomaterials. 2012: 1-7. DOI: 10.5402/2012/207043  0.333
2012 Kumar A, Akram MW, Dinda SG, Ghosh B. Spin Relaxation in Silicon Nanowires Journal of Computational and Theoretical Nanoscience. 9: 2068-2073. DOI: 10.1166/Jctn.2012.2617  0.316
2012 Ghosh B, Misra S. Monte Carlo simulation study of spin transport in trilayer graphene: A comparison between ABA and ABC stacking Journal of Applied Physics. 112: 73720. DOI: 10.1063/1.4757948  0.334
2012 Misra S, Ghosh B, Nandal V, Dubey L. Monte Carlo simulation study of spin transport in multilayer graphene with Bernal stacking Journal of Applied Physics. 112: 23708. DOI: 10.1063/1.4739730  0.338
2012 Kumar A, Akram MW, Ghosh B. Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires Aip Advances. 2: 12165. DOI: 10.1063/1.3694892  0.335
2011 Kumar A, Akram MW, Dinda SG, Ghosh B. Spin dephasing in silicon germanium (Si1−xGex) nanowires Journal of Applied Physics. 110: 113720. DOI: 10.1063/1.3666022  0.329
2011 Ghosh B, Misra S. Monte Carlo simulation study of spin transport in single layer graphene Journal of Applied Physics. 110: 43711. DOI: 10.1063/1.3622661  0.318
2011 Kamra A, Ghosh B. The role of electron-electron scattering in spin transport Journal of Applied Physics. 109. DOI: 10.1063/1.3532042  0.336
2010 Kamra A, Ghosh B, Ghosh TK. Spin relaxation due to electron-electron magnetic interaction in high Lande g -factor semiconductors Journal of Applied Physics. 108. DOI: 10.1063/1.3481063  0.333
2010 Ghosh B, Liu H, Winstead B, Foisy MC, Banerjee SK. Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Solid-State Electronics. 54: 1295-1299. DOI: 10.1016/J.Sse.2010.04.005  0.302
2007 Fan XF, Register LF, Winstead B, Foisy MC, Chen W, Zheng X, Ghosh B, Banerjee SK. Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa Ieee Transactions On Electron Devices. 54: 291-296. DOI: 10.1109/Ted.2006.888667  0.651
2006 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of strained germanium nanoscale bulk pMOSFETs Ieee Transactions On Electron Devices. 53: 533-537. DOI: 10.1109/Ted.2005.863765  0.561
2006 Ghosh B, Chen JH, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics Solid-State Electronics. 50: 248-253. DOI: 10.1016/J.Sse.2005.12.007  0.566
2005 Ghosh B, Wang X, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium n- and pMOSFETs Ieee Transactions On Electron Devices. 52: 547-553. DOI: 10.1109/Ted.2005.844736  0.599
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