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Jiangjiang Gu, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Akbulut MB, Gu J, Pap A, Allampalli V, Faken D, Ervin J, Greiner K, Fried D. Investigation of 3D photoresist profile effect in self-aligned patterning through virtual fabrication Proceedings of Spie. 10147. DOI: 10.1117/12.2258157  0.309
2015 Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/Acs.Nanolett.5B03366  0.583
2015 Shin S, Wahab MA, Masuduzzaman M, Maize K, Gu J, Si M, Shakouri A, Ye PD, Alam MA. Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2444879  0.536
2015 Si M, Conrad NJ, Shin S, Gu J, Zhang J, Alam MA, Ye PD. Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs Ieee Transactions On Electron Devices. 62: 3508-3515. DOI: 10.1109/Ted.2015.2433921  0.511
2015 Wu H, Si M, Dong L, Gu J, Zhang J, Ye PD. Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426. DOI: 10.1109/Ted.2015.2412878  0.584
2013 Neal AT, Liu H, Gu J, Ye PD. Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. Acs Nano. 7: 7077-82. PMID 23889126 DOI: 10.1021/Nn402377G  0.497
2013 Conrad N, Shin S, Gu J, Si M, Wu H, Masuduzzaman M, Alam MA, Ye PD. Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs Ieee Transactions On Device and Materials Reliability. 13: 489-496. DOI: 10.1109/Tdmr.2013.2283854  0.584
2012 Wang C, Xu M, Gu J, Zhang DW, Ye PD. GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric Electrochemical and Solid-State Letters. 15: H51. DOI: 10.1149/2.001203Esl  0.49
2012 Liu H, Gu J, Ye PD. $\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming Ieee Electron Device Letters. 33: 1273-1275. DOI: 10.1109/Led.2012.2202630  0.429
2012 Shen T, Neal AT, Bolen ML, Gu JJ, Engel LW, Capano MA, Ye PD. Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111. DOI: 10.1063/1.3675464  0.404
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