Peide Ye - Publications

Physics Purdue University, West Lafayette, IN, United States 
Condensed Matter Physics, Electronics and Electrical Engineering

49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any innacuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Bae H, Charnas A, Sun X, Noh J, Si M, Chung W, Qiu G, Lyu X, Alghamdi S, Wang H, Zemlyanov D, Ye PD. Solar-Blind UV Photodetector Based on Atomic Layer-Deposited CuO and Nanomembrane β-GaO pn Oxide Heterojunction. Acs Omega. 4: 20756-20761. PMID 31858062 DOI: 10.1021/acsomega.9b03149  0.64
2019 Si M, Saha AK, Liao PY, Gao S, Neumayer S, Jian J, Qin J, Balke Wisinger N, Wang H, Maksymovych P, Wu W, Gupta SK, Ye PD. Room Temperature Electrocaloric Effect in 2D Ferroelectric CuInP2S6 for Solid State Refrigeration. Acs Nano. PMID 31374166 DOI: 10.1021/acsnano.9b01491  0.64
2019 Qiu G, Huang S, Segovia M, Venuthurumilli PK, Wang YX, Wu WZ, Xu X, Ye PD. Thermoelectric Performance of 2D Tellurium with Accumulation Contacts. Nano Letters. PMID 30753783 DOI: 10.1021/acs.nanolett.8b05144  0.64
2019 Berweger S, Qiu G, Wang YX, Pollard B, Genter KL, Tyrrell-Ead R, Wallis TM, Wu WZ, Ye PD, Kabos P. Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors. Nano Letters. PMID 30673247 DOI: 10.1021/acs.nanolett.8b04865  0.64
2018 Qiu G, Wang YX, Nie Y, Zheng Y, Cho K, Wu W, Ye PD. Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene. Nano Letters. PMID 30126280 DOI: 10.1021/acs.nanolett.8b02368  0.64
2018 Wu W, Qiu G, Wang Y, Wang R, Ye P. Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chemical Society Reviews. PMID 30118130 DOI: 10.1039/c8cs00598b  0.64
2018 Zhang H, Cheng HM, Ye P. 2D nanomaterials: beyond graphene and transition metal dichalcogenides. Chemical Society Reviews. PMID 30070294 DOI: 10.1039/c8cs90084a  0.6
2018 Si M, Liao PY, Qiu G, Duan Y, Ye PD. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure. Acs Nano. PMID 29944829 DOI: 10.1021/acsnano.8b01810  0.64
2018 Si M, Jiang C, Chung W, Du Y, Alam MA, Ye PD. Steep-slope WSe2 Negative Capacitance Field-effect Transistor. Nano Letters. PMID 29733598 DOI: 10.1021/acs.nanolett.8b00816  0.6
2018 Venuthurumilli PK, Ye PD, Xu X. Plasmonic Resonance Enhanced Polarization Sensitive Photodetection by Black Phosphorus in Near Infrared. Acs Nano. PMID 29684270 DOI: 10.1021/acsnano.8b01660  0.56
2018 Qiu G, Nian Q, Motlag M, Jin S, Deng B, Deng Y, Charnas AR, Ye PD, Cheng GJ. Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29337377 DOI: 10.1002/adma.201704405  0.64
2017 Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus? Acs Omega. 2: 4173-4179. PMID 31457714 DOI: 10.1021/acsomega.7b00634  0.64
2017 Zhou H, Maize K, Noh J, Shakouri A, Ye PD. Thermodynamic Studies of β-GaO Nanomembrane Field-Effect Transistors on a Sapphire Substrate. Acs Omega. 2: 7723-7729. PMID 31457329 DOI: 10.1021/acsomega.7b01313  0.52
2017 Si M, Yang L, Zhou H, Ye PD. β-GaO Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications. Acs Omega. 2: 7136-7140. PMID 31457293 DOI: 10.1021/acsomega.7b01289  0.6
2017 Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology. PMID 29255287 DOI: 10.1038/s41565-017-0010-1  0.64
2017 Chang HM, Charnas A, Lin YM, Ye PD, Wu CI, Wu CH. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. Scientific Reports. 7: 16857. PMID 29203831 DOI: 10.1038/s41598-017-16845-w  0.48
2017 Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. Acs Nano. PMID 28949510 DOI: 10.1021/acsnano.7b04786  0.64
2017 Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. 1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport. Nano Letters. PMID 28562056 DOI: 10.1021/acs.nanolett.7b01717  0.64
2016 Qiu G, Du Y, Charnas A, Zhou H, Jin S, Luo Z, Zemlyanov DY, Xu X, Cheng GJ, Ye PD. Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5. Nano Letters. 16: 7364-7369. PMID 27960486 DOI: 10.1021/acs.nanolett.6b02629  0.64
2016 Lou X, Zhou H, Kim SB, Alghamdi S, Gong X, Feng J, Wang X, Ye PD, Gordon RG. Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition. Nano Letters. 16: 7650-7654. PMID 27960444 DOI: 10.1021/acs.nanolett.6b03638  0.52
2016 Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology. 27: 434002. PMID 27658938 DOI: 10.1088/0957-4484/27/43/434002  0.56
2016 Du Y, Maassen J, Wu W, Luo Z, Xu X, Ye PD. Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio. Nano Letters. PMID 27649304 DOI: 10.1021/acs.nanolett.6b03607  0.56
2016 Du Y, Neal AT, Zhou H, Ye PD. Transport studies in 2D transition metal dichalcogenides and black phosphorus. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 263002. PMID 27187790 DOI: 10.1088/0953-8984/28/26/263002  0.56
2016 Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye PD, Duan X. Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky and p-n Heterojunctions. Acs Nano. PMID 27132492 DOI: 10.1021/acsnano.6b01842  0.56
2016 Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale. PMID 26806878 DOI: 10.1039/c5nr06647f  0.44
2015 Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/acs.nanolett.5b03366  0.6
2015 Luo Z, Maassen J, Deng Y, Du Y, Garrelts RP, Lundstrom MS, Ye PD, Xu X. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nature Communications. 6: 8572. PMID 26472191 DOI: 10.1038/ncomms9572  0.56
2015 Choi J, Chen H, Li F, Yang L, Kim SS, Naik RR, Ye PD, Choi JH. Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes. Small (Weinheim An Der Bergstrasse, Germany). PMID 26313027 DOI: 10.1002/smll.201501431  0.6
2015 Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study. Acs Applied Materials & Interfaces. 7: 13038-43. PMID 26016806 DOI: 10.1021/acsami.5b03192  0.56
2015 Nam W, Mitchell JI, Ye PD, Xu X. Laser direct synthesis of silicon nanowire field effect transistors. Nanotechnology. 26: 055306. PMID 25590692 DOI: 10.1088/0957-4484/26/5/055306  0.56
2015 Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance potential and limit of MoS2 transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 1547-52. PMID 25586919 DOI: 10.1002/adma.201405068  0.6
2015 Liu H, Du Y, Deng Y, Ye PD. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chemical Society Reviews. 44: 2732-43. PMID 25307017 DOI: 10.1039/c4cs00257a  0.56
2014 Du Y, Liu H, Deng Y, Ye PD. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. Acs Nano. 8: 10035-42. PMID 25314022 DOI: 10.1021/nn502553m  0.56
2014 Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Letters. 14: 6275-80. PMID 25310177 DOI: 10.1021/nl502603d  0.56
2014 Neal AT, Du Y, Liu H, Ye PD. Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current density. Acs Nano. 8: 9137-42. PMID 25133691 DOI: 10.1021/nn5027164  0.56
2014 Deng Y, Luo Z, Conrad NJ, Liu H, Gong Y, Najmaei S, Ajayan PM, Lou J, Xu X, Ye PD. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. Acs Nano. 8: 8292-9. PMID 25019534 DOI: 10.1021/nn5027388  0.56
2014 Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. Acs Nano. 8: 4033-41. PMID 24655084 DOI: 10.1021/nn501226z  0.56
2014 Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. Acs Nano. 8: 1031-8. PMID 24351134 DOI: 10.1021/nn405916t  0.56
2013 Neal AT, Liu H, Gu J, Ye PD. Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. Acs Nano. 7: 7077-82. PMID 23889126 DOI: 10.1021/nn402377g  0.56
2013 Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Letters. 13: 2640-6. PMID 23679044 DOI: 10.1021/nl400778q  0.56
2013 Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/nl3041349  0.56
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/nl303669w  0.56
2012 Liu H, Neal AT, Ye PD. Channel length scaling of MoS2 MOSFETs. Acs Nano. 6: 8563-9. PMID 22957650 DOI: 10.1021/nn303513c  0.56
2010 Wu Y, Ye P, Mirza IO, Arce GR, Prather DW. Experimental demonstration of an optical-sectioning compressive sensing microscope (CSM). Optics Express. 18: 24565-78. PMID 21164803 DOI: 10.1364/OE.18.024565  0.8
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/adma.200801032  0.56
2009 Moon JM, Akin D, Xuan Y, Ye PD, Guo P, Bashir R. Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes. Biomedical Microdevices. 11: 135-42. PMID 18770041 DOI: 10.1007/s10544-008-9217-0  0.56
2007 Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/nnano.2007.151  0.56
2007 Song HM, Ye PD, Ivanisevic A. Elastomeric nanoparticle composites covalently bound to Al2O3/GaAs surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 9472-80. PMID 17655262 DOI: 10.1021/la700979r  0.56
2007 Ye P, Lu ZL, Du BM, Chen Z, Wu YF, Yu XH, Zhao YC. Effect of xuezhikang on cardiovascular events and mortality in elderly patients with a history of myocardial infarction: a subgroup analysis of elderly subjects from the China Coronary Secondary Prevention Study. Journal of the American Geriatrics Society. 55: 1015-22. PMID 17608873 DOI: 10.1111/j.1532-5415.2007.01230.x  0.52
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