Peide Ye - Publications

Affiliations: 
Physics Purdue University, West Lafayette, IN, United States 
Area:
Condensed Matter Physics, Electronics and Electrical Engineering

122 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Si M, Andler J, Lyu X, Niu C, Datta S, Agrawal R, Ye PD. Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating. Acs Nano. PMID 32833445 DOI: 10.1021/acsnano.0c03978  0.76
2020 Qin JK, Zhou F, Wang J, Chen J, Wang C, Guo X, Zhao S, Pei Y, Zhen L, Ye PD, Lau SP, Zhu Y, Xu CY, Chai Y. Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors. Acs Nano. PMID 32806043 DOI: 10.1021/acsnano.0c03124  0.56
2020 Jnawali G, Xiang Y, Linser SM, Shojaei IA, Wang R, Qiu G, Lian C, Wong BM, Wu W, Ye PD, Leng Y, Jackson HE, Smith LM. Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets. Nature Communications. 11: 3991. PMID 32778660 DOI: 10.1038/s41467-020-17766-5  0.76
2020 Qiu G, Niu C, Wang Y, Si M, Zhang Z, Wu W, Ye PD. Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene. Nature Nanotechnology. PMID 32601448 DOI: 10.1038/s41565-020-0715-4  0.76
2019 Bae H, Charnas A, Sun X, Noh J, Si M, Chung W, Qiu G, Lyu X, Alghamdi S, Wang H, Zemlyanov D, Ye PD. Solar-Blind UV Photodetector Based on Atomic Layer-Deposited CuO and Nanomembrane β-GaO pn Oxide Heterojunction. Acs Omega. 4: 20756-20761. PMID 31858062 DOI: 10.1021/acsomega.9b03149  0.76
2019 Si M, Saha AK, Liao PY, Gao S, Neumayer S, Jian J, Qin J, Balke Wisinger N, Wang H, Maksymovych P, Wu W, Gupta SK, Ye PD. Room Temperature Electrocaloric Effect in 2D Ferroelectric CuInP2S6 for Solid State Refrigeration. Acs Nano. PMID 31374166 DOI: 10.1021/acsnano.9b01491  0.76
2019 Qiu G, Huang S, Segovia M, Venuthurumilli PK, Wang YX, Wu WZ, Xu X, Ye PD. Thermoelectric Performance of 2D Tellurium with Accumulation Contacts. Nano Letters. PMID 30753783 DOI: 10.1021/acs.nanolett.8b05144  0.76
2019 Berweger S, Qiu G, Wang YX, Pollard B, Genter KL, Tyrrell-Ead R, Wallis TM, Wu WZ, Ye PD, Kabos P. Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors. Nano Letters. PMID 30673247 DOI: 10.1021/acs.nanolett.8b04865  0.76
2018 Qiu G, Wang YX, Nie Y, Zheng Y, Cho K, Wu W, Ye PD. Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene. Nano Letters. PMID 30126280 DOI: 10.1021/acs.nanolett.8b02368  0.76
2018 Wu W, Qiu G, Wang Y, Wang R, Ye P. Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chemical Society Reviews. PMID 30118130 DOI: 10.1039/c8cs00598b  0.76
2018 Zhang H, Cheng HM, Ye P. 2D nanomaterials: beyond graphene and transition metal dichalcogenides. Chemical Society Reviews. PMID 30070294 DOI: 10.1039/c8cs90084a  0.6
2018 Si M, Liao PY, Qiu G, Duan Y, Ye PD. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure. Acs Nano. PMID 29944829 DOI: 10.1021/acsnano.8b01810  0.76
2018 Si M, Jiang C, Chung W, Du Y, Alam MA, Ye PD. Steep-slope WSe2 Negative Capacitance Field-effect Transistor. Nano Letters. PMID 29733598 DOI: 10.1021/acs.nanolett.8b00816  0.76
2018 Venuthurumilli PK, Ye PD, Xu X. Plasmonic Resonance Enhanced Polarization Sensitive Photodetection by Black Phosphorus in Near Infrared. Acs Nano. PMID 29684270 DOI: 10.1021/acsnano.8b01660  0.56
2018 Ziabari A, Torres P, Vermeersch B, Xuan Y, Cartoixà X, Torelló A, Bahk JH, Koh YR, Parsa M, Ye PD, Alvarez FX, Shakouri A. Full-field thermal imaging of quasiballistic crosstalk reduction in nanoscale devices. Nature Communications. 9: 255. PMID 29343700 DOI: 10.1038/s41467-017-02652-4  0.76
2018 Qiu G, Nian Q, Motlag M, Jin S, Deng B, Deng Y, Charnas AR, Ye PD, Cheng GJ. Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29337377 DOI: 10.1002/adma.201704405  0.76
2017 Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus? Acs Omega. 2: 4173-4179. PMID 31457714 DOI: 10.1021/acsomega.7b00634  0.76
2017 Zhou H, Maize K, Noh J, Shakouri A, Ye PD. Thermodynamic Studies of β-GaO Nanomembrane Field-Effect Transistors on a Sapphire Substrate. Acs Omega. 2: 7723-7729. PMID 31457329 DOI: 10.1021/acsomega.7b01313  0.52
2017 Si M, Yang L, Zhou H, Ye PD. β-GaO Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications. Acs Omega. 2: 7136-7140. PMID 31457293 DOI: 10.1021/acsomega.7b01289  0.76
2017 Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology. PMID 29255287 DOI: 10.1038/s41565-017-0010-1  0.76
2017 Chang HM, Charnas A, Lin YM, Ye PD, Wu CI, Wu CH. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. Scientific Reports. 7: 16857. PMID 29203831 DOI: 10.1038/s41598-017-16845-w  0.48
2017 Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. Acs Nano. PMID 28949510 DOI: 10.1021/acsnano.7b04786  0.76
2017 Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. 1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport. Nano Letters. PMID 28562056 DOI: 10.1021/acs.nanolett.7b01717  0.76
2017 Gamage S, Fali A, Aghamiri N, Yang L, Ye PD, Abate Y. Reliable Passivation of Black Phosphorus by Thin Hybrid Coating. Nanotechnology. PMID 28548048 DOI: 10.1088/1361-6528/aa7532  0.6
2017 Ng A, Sutto T, Matis B, Deng Y, Ye PD, Stroud R, Brintlinger T, Bassim N. Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning. Nanotechnology. PMID 28234632 DOI: 10.1088/1361-6528/aa62f6  0.48
2016 Qiu G, Du Y, Charnas A, Zhou H, Jin S, Luo Z, Zemlyanov DY, Xu X, Cheng GJ, Ye PD. Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5. Nano Letters. 16: 7364-7369. PMID 27960486 DOI: 10.1021/acs.nanolett.6b02629  0.76
2016 Lou X, Zhou H, Kim SB, Alghamdi S, Gong X, Feng J, Wang X, Ye PD, Gordon RG. Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition. Nano Letters. 16: 7650-7654. PMID 27960444 DOI: 10.1021/acs.nanolett.6b03638  0.76
2016 Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology. 27: 434002. PMID 27658938 DOI: 10.1088/0957-4484/27/43/434002  0.96
2016 Du Y, Maassen J, Wu W, Luo Z, Xu X, Ye PD. Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio. Nano Letters. PMID 27649304 DOI: 10.1021/acs.nanolett.6b03607  0.96
2016 Du Y, Neal AT, Zhou H, Ye PD. Transport studies in 2D transition metal dichalcogenides and black phosphorus. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 263002. PMID 27187790 DOI: 10.1088/0953-8984/28/26/263002  0.96
2016 Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye PD, Duan X. Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky and p-n Heterojunctions. Acs Nano. PMID 27132492 DOI: 10.1021/acsnano.6b01842  0.96
2016 Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale. PMID 26806878 DOI: 10.1039/c5nr06647f  0.44
2016 Wu H, Wu W, Si M, Ye PD. Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2016.2581862  0.96
2016 Xu D, Chu K, Diaz JA, Ashman MD, Komiak JJ, Pleasant LMM, Vera A, Seekell P, Yang X, Creamer C, Nichols KB, Duh KHG, Smith PM, Chao PC, Dong L, ... Ye PD, et al. 0.1-μm InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess Ieee Transactions On Electron Devices. 63: 3076-3083. DOI: 10.1109/TED.2016.2579160  0.96
2016 Zhou H, Lou X, Conrad NJ, Si M, Wu H, Alghamdi S, Guo S, Gordon RG, Ye PD. High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 37: 556-559. DOI: 10.1109/LED.2016.2537198  0.96
2016 Du Y, Yang L, Zhou H, Ye PD. Performance enhancement of black phosphorus field-effect transistors by chemical doping Ieee Electron Device Letters. 37: 429-432. DOI: 10.1109/LED.2016.2535905  0.96
2016 Wu H, Wu W, Si M, Ye PD. First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 μs/μm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters Technical Digest - International Electron Devices Meeting, Iedm. 2016: 2.1.1-2.1.4. DOI: 10.1109/IEDM.2015.7409610  0.96
2016 Zhou H, Sutherlin K, Lou X, Kim SB, Chabak KD, Gordon RG, Ye PD. DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548407  0.96
2016 Zhou H, Du Y, Ye PD. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance Applied Physics Letters. 108. DOI: 10.1063/1.4950816  0.96
2015 Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/acs.nanolett.5b03366  0.6
2015 Luo Z, Maassen J, Deng Y, Du Y, Garrelts RP, Lundstrom MS, Ye PD, Xu X. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nature Communications. 6: 8572. PMID 26472191 DOI: 10.1038/ncomms9572  0.64
2015 Choi J, Chen H, Li F, Yang L, Kim SS, Naik RR, Ye PD, Choi JH. Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes. Small (Weinheim An Der Bergstrasse, Germany). PMID 26313027 DOI: 10.1002/smll.201501431  0.6
2015 Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study. Acs Applied Materials & Interfaces. 7: 13038-43. PMID 26016806 DOI: 10.1021/acsami.5b03192  0.96
2015 Nam W, Mitchell JI, Ye PD, Xu X. Laser direct synthesis of silicon nanowire field effect transistors. Nanotechnology. 26: 055306. PMID 25590692 DOI: 10.1088/0957-4484/26/5/055306  0.56
2015 Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance potential and limit of MoS2 transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 1547-52. PMID 25586919 DOI: 10.1002/adma.201405068  0.6
2015 Liu H, Du Y, Deng Y, Ye PD. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chemical Society Reviews. 44: 2732-43. PMID 25307017 DOI: 10.1039/c4cs00257a  0.64
2015 Wu H, Luo W, Zhou H, Si M, Zhang J, Ye PD. First experimental demonstration of Ge 3D FinFET CMOS circuits Digest of Technical Papers - Symposium On Vlsi Technology. 2015: T58-T59. DOI: 10.1109/VLSIT.2015.7223702  0.96
2015 Ye PD. Device perspective on 2D materials (invited) International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 2015. DOI: 10.1109/VLSI-TSA.2015.7117595  0.96
2015 Ren S, Si M, Ni K, Wan X, Chen J, Chang S, Sun X, Zhang EX, Reed RA, Fleetwood DM, Ye P, Cui S, Ma TP. Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2888-2893. DOI: 10.1109/TNS.2015.2497090  0.96
2015 Ni K, Zhang EX, Samsel IK, Schrimpf RD, Reed RA, Fleetwood DM, Sternberg AL, McCurdy MW, Ren S, Ma TP, Dong L, Zhang JY, Ye PD. Charge Collection Mechanisms in GaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2752-2759. DOI: 10.1109/TNS.2015.2495203  0.96
2015 Shin S, Wahab MA, Masuduzzaman M, Maize K, Gu J, Si M, Shakouri A, Ye PD, Alam MA. Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2015.2444879  0.44
2015 Si M, Conrad NJ, Shin S, Gu J, Zhang J, Alam MA, Ye PD. Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs Ieee Transactions On Electron Devices. 62: 3508-3515. DOI: 10.1109/TED.2015.2433921  0.44
2015 Wu H, Si M, Dong L, Gu J, Zhang J, Ye PD. Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426. DOI: 10.1109/TED.2015.2412878  0.96
2015 Ziabari A, Bahk JH, Xuan Y, Ye PD, Kendig D, Yazawa K, Burke PG, Lu H, Gossard AC, Shakouri A. Sub-diffraction limit thermal imaging for HEMT devices Annual Ieee Semiconductor Thermal Measurement and Management Symposium. 2015: 82-87. DOI: 10.1109/SEMI-THERM.2015.7100144  0.6
2015 Xu D, Chu KK, Diaz JA, Ashman M, Komiak JJ, Pleasant LM, Creamer C, Nichols K, Duh KHG, Smith PM, Chao PC, Dong L, Ye PD. 0.1-μm atomic layer deposition Al2O3 passivated InAlN/GaN high electron-mobility transistors for E-band power amplifiers Ieee Electron Device Letters. 36: 442-444. DOI: 10.1109/LED.2015.2409264  0.68
2015 Si M, Shin S, Conrad NJ, Gu J, Zhang J, Alam MA, Ye PD. Characterization and reliability of III-V gate-all-around MOSFETs Ieee International Reliability Physics Symposium Proceedings. 2015: 4A11-4A16. DOI: 10.1109/IRPS.2015.7112723  0.96
2015 Deng Y, Conrad NJ, Luo Z, Liu H, Xu X, Ye PD. Towards high-performance two-dimensional black phosphorus optoelectronic devices: The role of metal contacts Technical Digest - International Electron Devices Meeting, Iedm. 2015: 5.2.1-5.2.4. DOI: 10.1109/IEDM.2014.7046987  0.96
2015 Wu H, Conrad N, Si M, Ye PD. Demonstration of Ge CMOS inverter and ring oscillator with 10 nm ultra-thin channel Device Research Conference - Conference Digest, Drc. 2015: 281-282. DOI: 10.1109/DRC.2015.7175685  0.96
2015 Zhou H, Lou X, Wu H, Alghamdi S, Guo S, Gordon RG, Ye PD. InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric Device Research Conference - Conference Digest, Drc. 2015: 57-58. DOI: 10.1109/DRC.2015.7175552  0.96
2015 Zhang J, Lou X, Si M, Wu H, Shao J, Manfra MJ, Gordon RG, Ye PD. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate Applied Physics Letters. 106. DOI: 10.1063/1.4913431  0.96
2015 Zhu H, Qin X, Azcatl A, Addou R, McDonnell S, Ye PD, Wallace RM. Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus Microelectronic Engineering. 147: 1-4. DOI: 10.1016/j.mee.2015.04.014  0.48
2014 Du Y, Liu H, Deng Y, Ye PD. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. Acs Nano. 8: 10035-42. PMID 25314022 DOI: 10.1021/nn502553m  0.64
2014 Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Letters. 14: 6275-80. PMID 25310177 DOI: 10.1021/nl502603d  0.96
2014 Neal AT, Du Y, Liu H, Ye PD. Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current density. Acs Nano. 8: 9137-42. PMID 25133691 DOI: 10.1021/nn5027164  0.64
2014 Deng Y, Luo Z, Conrad NJ, Liu H, Gong Y, Najmaei S, Ajayan PM, Lou J, Xu X, Ye PD. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. Acs Nano. 8: 8292-9. PMID 25019534 DOI: 10.1021/nn5027388  0.96
2014 Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. Acs Nano. 8: 4033-41. PMID 24655084 DOI: 10.1021/nn501226z  0.64
2014 Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. Acs Nano. 8: 1031-8. PMID 24351134 DOI: 10.1021/nn405916t  0.96
2014 Yang L, Majumdar K, Du Y, Liu H, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD. High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·μm) and record high drain current (460 μa/μm) Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894432  0.96
2014 Ye PD. Device perspective of 2D materials beyond graphene 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 896-897. DOI: 10.1109/NANO.2014.6968159  0.96
2014 Liu H, Neal AT, Si M, Du Y, Ye PD. The effect of dielectric capping on few-layer phosphorene transistors: Tuning the schottky barrier heights Ieee Electron Device Letters. 35: 795-797. DOI: 10.1109/LED.2014.2323951  0.96
2014 Du Y, Yang L, Zhang J, Liu H, Majumdar K, Kirsch PD, Ye PD. MoS2 Field-Effect transistors with graphene/metal heterocontacts Ieee Electron Device Letters. 35: 599-601. DOI: 10.1109/LED.2014.2313340  0.96
2014 Liu H, Neal AT, Ye PD. Ambipolar phosphorene field-effect transistors with dielectric capping Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2014.6872367  0.96
2014 Luo Z, Liu H, Spann BT, Feng Y, Ye P, Chen YP, Xu X. Measurement of in-plane thermal conductivity of ultrathin films using micro-Raman spectroscopy Nanoscale and Microscale Thermophysical Engineering. 18: 183-193. DOI: 10.1080/15567265.2014.892553  0.96
2014 Neal AT, Du Y, Liu H, Ye PD. Two-dimensional TaSe2 metallic crystals: Spin-orbit scattering length and breakdown current density Acs Nano. 8: 9137-9142. DOI: 10.1021/nn5027164  0.96
2013 Neal AT, Liu H, Gu J, Ye PD. Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. Acs Nano. 7: 7077-82. PMID 23889126 DOI: 10.1021/nn402377g  0.96
2013 Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Letters. 13: 2640-6. PMID 23679044 DOI: 10.1021/nl400778q  0.96
2013 Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/nl3041349  0.96
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/nl303669w  0.96
2013 Liu H, Neal AT, Du Y, Ye PD. Fundamentals in MoS2 transistors: Dielectric, scaling and metal contacts Ecs Transactions. 58: 203-208. DOI: 10.1149/05807.0203ecst  0.96
2013 Du Y, Liu H, Neal AT, Si M, Ye PD. Molecular doping of multilayer mos2 field-effect transistors: Reduction in sheet and contact resistances Ieee Electron Device Letters. 34: 1328-1330. DOI: 10.1109/LED.2013.2277311  0.96
2013 Gu JJ, Wang X, Wu H, Gordon RG, Ye PD. Variability improvement by interface passivation and EOT scaling of InGaAs nanowire MOSFETs Ieee Electron Device Letters. 34: 608-610. DOI: 10.1109/LED.2013.2248114  0.96
2013 Dong L, Wang XW, Zhang JY, Li XF, Gordon RG, Ye PD. GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial La 1.8Y0.2O3 as dielectric Ieee Electron Device Letters. 34: 487-489. DOI: 10.1109/LED.2013.2244058  0.96
2013 Ye PD. III-V MOS technology: From planar to 3D and 4D Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2013.6562562  0.96
2013 Si M, Gu JJ, Wang X, Shao J, Li X, Manfra MJ, Gordon RG, Ye PD. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4794846  0.96
2013 Xu M, Gu JJ, Wang C, Zhernokletov DM, Wallace RM, Ye PD. New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation Journal of Applied Physics. 113. DOI: 10.1063/1.4772944  0.96
2012 Liu H, Neal AT, Ye PD. Channel length scaling of MoS2 MOSFETs. Acs Nano. 6: 8563-9. PMID 22957650 DOI: 10.1021/nn303513c  0.96
2012 Patil A, Koybasi O, Lopez G, Foxe M, Childres I, Roecker C, Boguski J, Gu J, Bolen ML, Capano MA, Jovanovic I, Ye P, Chen YP, Bolen MA. Graphene field effect transistor as radiation sensor Ieee Nuclear Science Symposium Conference Record. 455-459. DOI: 10.1109/NSSMIC.2011.6154538  0.96
2012 Gu JJ, Wu H, Liu Y, Neal AT, Gordon RG, Ye PD. Size-dependent-transport study of in 0.53Ga 0.47As gate-all-around nanowire MOSFETs: Impact of quantum confinement and volume inversion Ieee Electron Device Letters. 33: 967-969. DOI: 10.1109/LED.2012.2194690  0.96
2012 Xu D, Chu K, Diaz J, Zhu W, Roy R, Seekell P, Pleasant LM, Isaak R, Yang X, Nichols K, Pritchard D, Duh G, Chao PC, Xu M, Ye P. Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6411000  0.96
2012 Xu K, Zeng C, Zhang Q, Ye P, Wang K, Richter CA, Gundlach D, Nguyen NV. Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2012.6256941  0.96
2012 Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/j.sse.2012.05.044  0.96
2011 Wang C, Xu M, Colby R, Stach EA, Ye PD. 'Zero' drain-current drift of inversion-mode NMOSFET on InP (111)A surface Device Research Conference - Conference Digest, Drc. 93-94. DOI: 10.1109/DRC.2011.5994430  0.96
2011 Gu JJ, Neal AT, Ye PD. Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 99. DOI: 10.1063/1.3651754  0.96
2011 Gu JJ, Koybasi O, Wu YQ, Ye PD. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation Applied Physics Letters. 99. DOI: 10.1063/1.3638474  0.96
2011 Gu JJ, Wu YQ, Ye PD. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3553440  0.96
2011 Hinkle CL, Vogel EM, Ye PD, Wallace RM. Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications Current Opinion in Solid State and Materials Science. 15: 188-207. DOI: 10.1016/j.cossms.2011.04.005  0.96
2010 Wu Y, Ye P, Mirza IO, Arce GR, Prather DW. Experimental demonstration of an optical-sectioning compressive sensing microscope (CSM). Optics Express. 18: 24565-78. PMID 21164803 DOI: 10.1364/OE.18.024565  0.8
2010 Ye PD, Neal AT, Shen T, Gu JJ, Bolen ML, Capano MA. Atomic-layer-deposited high-k dielectric integration on epitaxial graphene Ecs Transactions. 33: 459-466. DOI: 10.1149/1.3481634  0.96
2010 Ye PD, Gu JJ, Wu YQ, Xu M, Xuan Y, Shen T, Neal AT. ALD high-k as a common gate stack solution for nano-electronics Ecs Transactions. 28: 51-68. DOI: 10.1149/1.3372563  0.96
2010 Neal AT, Gu J, Bolen M, Shen T, Capano M, Engle L, Ye PD. Electronic transport properties in top-gated epitaxial graphene on silicon carbide with ALD Al2O3 high-k dielectric Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508904  0.96
2010 Ye PD. High-k III-V MOSFETs enabled by atomic layer deposition Icsict-2010 - 2010 10th Ieee International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 1302. DOI: 10.1109/ICSICT.2010.5667644  0.96
2010 Liu Y, Xu M, Heo J, Ye PD, Gordon RG. Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition Applied Physics Letters. 97. DOI: 10.1063/1.3504254  0.96
2010 Gu JJ, Liu YQ, Xu M, Celler GK, Gordon RG, Ye PD. High performance atomic-layer-deposited LaLuO3 /Ge -on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer Applied Physics Letters. 97. DOI: 10.1063/1.3462303  0.96
2010 Oktyabrsky S, Ye PD. Fundamentals of III-V semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 1-445. DOI: 10.1007/978-1-4419-1547-4  0.96
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/adma.200801032  0.96
2009 Moon JM, Akin D, Xuan Y, Ye PD, Guo P, Bashir R. Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes. Biomedical Microdevices. 11: 135-42. PMID 18770041 DOI: 10.1007/s10544-008-9217-0  0.96
2009 Wu YQ, Wang WK, Koybasi O, Zakharov DN, Stach EA, Nakahara S, Hwang JCM, Ye PD. 0.8-V supply voltage deep-submicrometer inversion-mode In0.75 Ga0.25As MOSFET Ieee Electron Device Letters. 30: 700-702. DOI: 10.1109/LED.2009.2022346  0.96
2009 Shen T, Neal AT, Gu J, Xu M, Wu Y, Bolen M, Capano MA, Engel L, Ye PD. Pronounced quantum hall-effect on epitaxial graphene up to 70K 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378096  0.96
2009 Kim S, Xu M, Yu L, Ye PD, Janes DB, Ju S, Mohammadi S. Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2009.5354867  0.96
2008 Ye PD. Main determinants for III-V metal-oxide-semiconductor field-effect transistors (invited) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 697-704. DOI: 10.1116/1.2905246  0.96
2008 Nguyen NV, Kirillov OA, Jiang W, Wang W, Suehle JS, Ye PD, Xuan Y, Goel N, Choi KW, Tsai W, Sayan S. Band offsets of atomic-layer-deposited Al2 O3 on GaAs and the effects of surface treatment Applied Physics Letters. 93. DOI: 10.1063/1.2976676  0.96
2008 Aguirre-Tostado FS, Milojevic M, Choi KJ, Kim HC, Hinkle CL, Vogel EM, Kim J, Yang T, Xuan Y, Ye PD, Wallace RM. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters. 93. DOI: 10.1063/1.2961003  0.96
2008 Yang T, Liu Y, Ye PD, Xuan Y, Pal H, Lundstrom MS. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92. DOI: 10.1063/1.2953080  0.96
2008 Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Applied Physics Letters. 92. DOI: 10.1063/1.2828338  0.96
2007 Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/nnano.2007.151  0.96
2007 Song HM, Ye PD, Ivanisevic A. Elastomeric nanoparticle composites covalently bound to Al2O3/GaAs surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 9472-80. PMID 17655262 DOI: 10.1021/la700979r  0.96
2007 Ye P, Lu ZL, Du BM, Chen Z, Wu YF, Yu XH, Zhao YC. Effect of xuezhikang on cardiovascular events and mortality in elderly patients with a history of myocardial infarction: a subgroup analysis of elderly subjects from the China Coronary Secondary Prevention Study. Journal of the American Geriatrics Society. 55: 1015-22. PMID 17608873 DOI: 10.1111/j.1532-5415.2007.01230.x  0.52
2007 Kim SK, Xuan Y, Ye PD, Mohammadi S, Back JH, Shim M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2724904  0.96
2006 Xuan Y, Lin HC, Ye PD. Capacitance-voltage characterization of atomic-layer-deposited Al 2O3/InGaAs and Al2O3/GaAs metal-oxide-semiconductor structures Ecs Transactions. 3: 59-69. DOI: 10.1149/1.2355699  0.96
2003 Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Ng K, Bude J. Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric Journal of Crystal Growth. 251: 837-842. DOI: 10.1016/S0022-0248(02)02273-X  0.96
2003 Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, et al. Advances in high κ gate dielectrics for Si and III-V semiconductors Journal of Crystal Growth. 251: 645-650. DOI: 10.1016/S0022-0248(02)02192-9  0.96
2002 Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL. Microwave conductivity of antidot array in regime of fractional quantum Hall effect Physica E: Low-Dimensional Systems and Nanostructures. 12: 109-111. DOI: 10.1016/S1386-9477(01)00256-9  0.96
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