| Year |
Citation |
Score |
| 2024 |
Tan P, Niu C, Lin Z, Lin JY, Long L, Zhang Y, Wilk G, Wang H, Ye PD. Wafer-Scale Atomic Layer-Deposited TeO/Te Heterostructure P-Type Thin-Film Transistors. Nano Letters. PMID 39351960 DOI: 10.1021/acs.nanolett.4c02969 |
0.33 |
|
| 2024 |
Niu C, Wang M, Zhang Z, Qiu G, Wang Y, Zheng D, Liao PY, Wu W, Ye PD. Superconducting Field-Effect Transistors with PdTe-Te Intimate Contacts. Acs Nano. PMID 38819119 DOI: 10.1021/acsnano.4c02352 |
0.351 |
|
| 2023 |
Charnas A, Zhang Z, Lin Z, Zheng D, Zhang J, Si M, Ye PD. Review - Extremely Thin Amorphous Indium Oxide Transistors. Advanced Materials (Deerfield Beach, Fla.). e2304044. PMID 37957006 DOI: 10.1002/adma.202304044 |
0.311 |
|
| 2023 |
Niu C, Qiu G, Wang Y, Tan P, Wang M, Jian J, Wang H, Wu W, Ye PD. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium. Nano Letters. PMID 37677143 DOI: 10.1021/acs.nanolett.3c01797 |
0.611 |
|
| 2022 |
Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current. Acs Nano. PMID 36446079 DOI: 10.1021/acsnano.2c10383 |
0.326 |
|
| 2021 |
Bae H, Park TJ, Noh J, Chung W, Si M, Ramanathan S, Ye PP. First demonstration of robust tri-gate β-GaOnano-membrane field-effect transistors. Nanotechnology. PMID 34852337 DOI: 10.1088/1361-6528/ac3f11 |
0.322 |
|
| 2021 |
Niu C, Qiu G, Wang Y, Si M, Wu W, Ye PD. Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well. Nano Letters. PMID 34514803 DOI: 10.1021/acs.nanolett.1c01705 |
0.652 |
|
| 2020 |
Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Why InO Can Make 0.7 nm Atomic Layer Thin Transistors. Nano Letters. PMID 33372788 DOI: 10.1021/acs.nanolett.0c03967 |
0.33 |
|
| 2020 |
Si M, Andler J, Lyu X, Niu C, Datta S, Agrawal R, Ye PD. Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating. Acs Nano. PMID 32833445 DOI: 10.1021/Acsnano.0C03978 |
0.307 |
|
| 2020 |
Jnawali G, Xiang Y, Linser SM, Shojaei IA, Wang R, Qiu G, Lian C, Wong BM, Wu W, Ye PD, Leng Y, Jackson HE, Smith LM. Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets. Nature Communications. 11: 3991. PMID 32778660 DOI: 10.1038/S41467-020-17766-5 |
0.586 |
|
| 2020 |
Qiu G, Niu C, Wang Y, Si M, Zhang Z, Wu W, Ye PD. Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene. Nature Nanotechnology. PMID 32601448 DOI: 10.1038/S41565-020-0715-4 |
0.61 |
|
| 2020 |
He Y, Bahr B, Si M, Ye P, Weinstein D. A tunable ferroelectric based unreleased RF resonator Microsystems & Nanoengineering. 6: 1-7. DOI: 10.1038/S41378-019-0110-1 |
0.32 |
|
| 2019 |
Bae H, Charnas A, Sun X, Noh J, Si M, Chung W, Qiu G, Lyu X, Alghamdi S, Wang H, Zemlyanov D, Ye PD. Solar-Blind UV Photodetector Based on Atomic Layer-Deposited CuO and Nanomembrane β-GaO pn Oxide Heterojunction. Acs Omega. 4: 20756-20761. PMID 31858062 DOI: 10.1021/acsomega.9b03149 |
0.595 |
|
| 2019 |
Qiu G, Huang S, Segovia M, Venuthurumilli PK, Wang YX, Wu WZ, Xu X, Ye PD. Thermoelectric Performance of 2D Tellurium with Accumulation Contacts. Nano Letters. PMID 30753783 DOI: 10.1021/Acs.Nanolett.8B05144 |
0.663 |
|
| 2019 |
Berweger S, Qiu G, Wang YX, Pollard B, Genter KL, Tyrrell-Ead R, Wallis TM, Wu WZ, Ye PD, Kabos P. Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors. Nano Letters. PMID 30673247 DOI: 10.1021/Acs.Nanolett.8B04865 |
0.648 |
|
| 2019 |
Ye P, Xuan Y, Wu Y, Xu M. Inversion-Mode Inxga1-Xas Mosfets (X=0.53,0.65,0.75) with Atomic-Layerdeposited High-K Dielectrics Ecs Transactions. 19: 605-614. DOI: 10.1149/1.3122119 |
0.39 |
|
| 2019 |
Si M, Saha AK, Gao S, Qiu G, Qin J, Duan Y, Jian J, Niu C, Wang H, Wu W, Gupta SK, Ye PD. A ferroelectric semiconductor field-effect transistor Nature Electronics. 2: 580-586. DOI: 10.1038/S41928-019-0338-7 |
0.374 |
|
| 2018 |
Qiu G, Wang YX, Nie Y, Zheng Y, Cho K, Wu W, Ye PD. Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene. Nano Letters. PMID 30126280 DOI: 10.1021/Acs.Nanolett.8B02368 |
0.64 |
|
| 2018 |
Wu W, Qiu G, Wang Y, Wang R, Ye P. Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chemical Society Reviews. PMID 30118130 DOI: 10.1039/C8Cs00598B |
0.665 |
|
| 2018 |
Zhang H, Cheng HM, Ye P. 2D nanomaterials: beyond graphene and transition metal dichalcogenides. Chemical Society Reviews. PMID 30070294 DOI: 10.1039/C8Cs90084A |
0.302 |
|
| 2018 |
Si M, Liao PY, Qiu G, Duan Y, Ye PD. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure. Acs Nano. PMID 29944829 DOI: 10.1021/acsnano.8b01810 |
0.648 |
|
| 2018 |
Si M, Jiang C, Chung W, Du Y, Alam MA, Ye PD. Steep-slope WSe2 Negative Capacitance Field-effect Transistor. Nano Letters. PMID 29733598 DOI: 10.1021/acs.nanolett.8b00816 |
0.3 |
|
| 2018 |
Qiu G, Nian Q, Motlag M, Jin S, Deng B, Deng Y, Charnas AR, Ye PD, Cheng GJ. Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29337377 DOI: 10.1002/adma.201704405 |
0.594 |
|
| 2018 |
Bhuiyan MA, Zhou H, Chang S, Lou X, Gong X, Jiang R, Gong H, Zhang EX, Won C, Lim J, Lee J, Gordon RG, Reed RA, Fleetwood DM, Ye P, et al. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52. DOI: 10.1109/Tns.2017.2774928 |
0.377 |
|
| 2018 |
Jiang C, Si M, Liang R, Xu J, Ye PD, Alam MA. A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors Ieee Journal of the Electron Devices Society. 6: 189-194. DOI: 10.1109/Jeds.2017.2787137 |
0.308 |
|
| 2018 |
Sarma R, Campione S, Goldflam M, Shank J, Noh J, Smith S, Ye PD, Sinclair M, Klem J, Wendt J, Ruiz I, Howell SW, Brener I. Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface Applied Physics Letters. 113: 061108. DOI: 10.1063/1.5042662 |
0.326 |
|
| 2018 |
Tian H, Ahn W, Maize K, Si M, Ye P, Alam MA, Shakouri A, Bermel P. Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions Journal of Applied Physics. 123: 035107. DOI: 10.1063/1.5005938 |
0.317 |
|
| 2017 |
Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus? Acs Omega. 2: 4173-4179. PMID 31457714 DOI: 10.1021/acsomega.7b00634 |
0.651 |
|
| 2017 |
Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology. PMID 29255287 DOI: 10.1038/S41565-017-0010-1 |
0.667 |
|
| 2017 |
Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. Acs Nano. PMID 28949510 DOI: 10.1021/Acsnano.7B04786 |
0.66 |
|
| 2017 |
Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. 1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport. Nano Letters. PMID 28562056 DOI: 10.1021/Acs.Nanolett.7B01717 |
0.605 |
|
| 2017 |
Min M, Saenz GA, Qiu G, Charnas A, Ye P, Kaul AB. Chemical Exfoliation of Black Phosphorus for Nanoelectronics Applications Mrs Advances. 2: 3697-3702. DOI: 10.1557/Adv.2017.341 |
0.353 |
|
| 2017 |
Ren S, Bhuiyan MA, Wu H, Jiang R, Ni K, Zhang EX, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel Ieee Transactions On Nuclear Science. 64: 176-180. DOI: 10.1109/Tns.2016.2624294 |
0.322 |
|
| 2017 |
Ren S, Bhuiyan MA, Zhang J, Lou X, Si M, Gong X, Jiang R, Ni K, Wan X, Zhang EX, Gordon RG, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics Ieee Transactions On Nuclear Science. 64: 164-169. DOI: 10.1109/Tns.2016.2620993 |
0.42 |
|
| 2017 |
Zhou H, Lou X, Sutherlin K, Summers J, Kim SB, Chabak KD, Gordon RG, Ye PD. DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 38: 1409-1412. DOI: 10.1109/Led.2017.2746338 |
0.307 |
|
| 2017 |
Zhou H, Lou X, Kim SB, Chabak KD, Gordon RG, Ye PD. Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO Ieee Electron Device Letters. 38: 1294-1297. DOI: 10.1109/Led.2017.2731993 |
0.331 |
|
| 2016 |
Qiu G, Du Y, Charnas A, Zhou H, Jin S, Luo Z, Zemlyanov DY, Xu X, Cheng GJ, Ye PD. Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5. Nano Letters. 16: 7364-7369. PMID 27960486 DOI: 10.1021/Acs.Nanolett.6B02629 |
0.651 |
|
| 2016 |
Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology. 27: 434002. PMID 27658938 DOI: 10.1088/0957-4484/27/43/434002 |
0.426 |
|
| 2016 |
Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye PD, Duan X. Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky and p-n Heterojunctions. Acs Nano. PMID 27132492 DOI: 10.1021/Acsnano.6B01842 |
0.415 |
|
| 2016 |
Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale. PMID 26806878 DOI: 10.1039/C5Nr06647F |
0.561 |
|
| 2016 |
Wu H, Wu W, Si M, Ye PD. Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2016.2581862 |
0.307 |
|
| 2016 |
Xu D, Chu K, Diaz JA, Ashman MD, Komiak JJ, Pleasant LMM, Vera A, Seekell P, Yang X, Creamer C, Nichols KB, Duh KHG, Smith PM, Chao PC, Dong L, ... Ye PD, et al. 0.1-μm InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess Ieee Transactions On Electron Devices. 63: 3076-3083. DOI: 10.1109/Ted.2016.2579160 |
0.463 |
|
| 2016 |
Zhou H, Lou X, Conrad NJ, Si M, Wu H, Alghamdi S, Guo S, Gordon RG, Ye PD. High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric Ieee Electron Device Letters. 37: 556-559. DOI: 10.1109/Led.2016.2537198 |
0.337 |
|
| 2016 |
Zhou H, Sutherlin K, Lou X, Kim SB, Chabak KD, Gordon RG, Ye PD. DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548407 |
0.361 |
|
| 2016 |
Zhou H, Du Y, Ye PD. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance Applied Physics Letters. 108. DOI: 10.1063/1.4950816 |
0.337 |
|
| 2015 |
Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/Acs.Nanolett.5B03366 |
0.726 |
|
| 2015 |
Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance potential and limit of MoS2 transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 1547-52. PMID 25586919 DOI: 10.1002/Adma.201405068 |
0.534 |
|
| 2015 |
Wu H, Luo W, Zhou H, Si M, Zhang J, Ye PD. First experimental demonstration of Ge 3D FinFET CMOS circuits Digest of Technical Papers - Symposium On Vlsi Technology. 2015: T58-T59. DOI: 10.1109/VLSIT.2015.7223702 |
0.311 |
|
| 2015 |
Ye PD. Device perspective on 2D materials (invited) International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 2015. DOI: 10.1109/VLSI-TSA.2015.7117595 |
0.371 |
|
| 2015 |
Ren S, Si M, Ni K, Wan X, Chen J, Chang S, Sun X, Zhang EX, Reed RA, Fleetwood DM, Ye P, Cui S, Ma TP. Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2888-2893. DOI: 10.1109/Tns.2015.2497090 |
0.436 |
|
| 2015 |
Shin S, Wahab MA, Masuduzzaman M, Maize K, Gu J, Si M, Shakouri A, Ye PD, Alam MA. Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2444879 |
0.669 |
|
| 2015 |
Si M, Conrad NJ, Shin S, Gu J, Zhang J, Alam MA, Ye PD. Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs Ieee Transactions On Electron Devices. 62: 3508-3515. DOI: 10.1109/Ted.2015.2433921 |
0.641 |
|
| 2015 |
Wu H, Si M, Dong L, Gu J, Zhang J, Ye PD. Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426. DOI: 10.1109/Ted.2015.2412878 |
0.724 |
|
| 2015 |
Xu D, Chu KK, Diaz JA, Ashman M, Komiak JJ, Pleasant LM, Creamer C, Nichols K, Duh KHG, Smith PM, Chao PC, Dong L, Ye PD. 0.1-μm atomic layer deposition Al2O3 passivated InAlN/GaN high electron-mobility transistors for E-band power amplifiers Ieee Electron Device Letters. 36: 442-444. DOI: 10.1109/Led.2015.2409264 |
0.489 |
|
| 2014 |
Du Y, Liu H, Deng Y, Ye PD. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. Acs Nano. 8: 10035-42. PMID 25314022 DOI: 10.1021/nn502553m |
0.341 |
|
| 2014 |
Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Letters. 14: 6275-80. PMID 25310177 DOI: 10.1021/nl502603d |
0.363 |
|
| 2014 |
Deng Y, Luo Z, Conrad NJ, Liu H, Gong Y, Najmaei S, Ajayan PM, Lou J, Xu X, Ye PD. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. Acs Nano. 8: 8292-9. PMID 25019534 DOI: 10.1021/Nn5027388 |
0.312 |
|
| 2014 |
Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. Acs Nano. 8: 4033-41. PMID 24655084 DOI: 10.1021/Nn501226Z |
0.338 |
|
| 2014 |
Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. Acs Nano. 8: 1031-8. PMID 24351134 DOI: 10.1021/Nn405916T |
0.308 |
|
| 2014 |
Ye PD. Device perspective of 2D materials beyond graphene 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 896-897. DOI: 10.1109/NANO.2014.6968159 |
0.37 |
|
| 2014 |
Liu H, Neal AT, Si M, Du Y, Ye PD. The effect of dielectric capping on few-layer phosphorene transistors: Tuning the schottky barrier heights Ieee Electron Device Letters. 35: 795-797. DOI: 10.1109/LED.2014.2323951 |
0.321 |
|
| 2014 |
Liu H, Neal AT, Ye PD. Ambipolar phosphorene field-effect transistors with dielectric capping Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2014.6872367 |
0.325 |
|
| 2013 |
Neal AT, Liu H, Gu J, Ye PD. Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. Acs Nano. 7: 7077-82. PMID 23889126 DOI: 10.1021/Nn402377G |
0.65 |
|
| 2013 |
Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Letters. 13: 2640-6. PMID 23679044 DOI: 10.1021/Nl400778Q |
0.365 |
|
| 2013 |
Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/Nl3041349 |
0.467 |
|
| 2013 |
Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W |
0.432 |
|
| 2013 |
Liu H, Neal AT, Du Y, Ye PD. Fundamentals in MoS2 transistors: Dielectric, scaling and metal contacts Ecs Transactions. 58: 203-208. DOI: 10.1149/05807.0203ecst |
0.359 |
|
| 2013 |
Conrad N, Shin S, Gu J, Si M, Wu H, Masuduzzaman M, Alam MA, Ye PD. Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs Ieee Transactions On Device and Materials Reliability. 13: 489-496. DOI: 10.1109/Tdmr.2013.2283854 |
0.702 |
|
| 2013 |
Dong L, Wang XW, Zhang JY, Li XF, Gordon RG, Ye PD. GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial La 1.8Y0.2O3 as dielectric Ieee Electron Device Letters. 34: 487-489. DOI: 10.1109/Led.2013.2244058 |
0.476 |
|
| 2013 |
Si M, Gu JJ, Wang X, Shao J, Li X, Manfra MJ, Gordon RG, Ye PD. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4794846 |
0.345 |
|
| 2012 |
Wang C, Xu M, Gu J, Zhang DW, Ye PD. GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric Electrochemical and Solid-State Letters. 15: H51. DOI: 10.1149/2.001203Esl |
0.662 |
|
| 2012 |
Liu H, Ye P. MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric Ieee Electron Device Letters. DOI: 10.1109/Led.2012.2184520 |
0.45 |
|
| 2012 |
Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044 |
0.423 |
|
| 2011 |
Wang C, Xu M, Colby R, Stach EA, Ye PD. 'Zero' drain-current drift of inversion-mode NMOSFET on InP (111)A surface Device Research Conference - Conference Digest, Drc. 93-94. DOI: 10.1109/DRC.2011.5994430 |
0.346 |
|
| 2011 |
Gu JJ, Neal AT, Ye PD. Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 99. DOI: 10.1063/1.3651754 |
0.382 |
|
| 2011 |
Gu JJ, Wu YQ, Ye PD. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3553440 |
0.327 |
|
| 2011 |
Hinkle CL, Vogel EM, Ye PD, Wallace RM. Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications Current Opinion in Solid State and Materials Science. 15: 188-207. DOI: 10.1016/J.Cossms.2011.04.005 |
0.31 |
|
| 2010 |
Wu Y, Ye P, Mirza IO, Arce GR, Prather DW. Experimental demonstration of an optical-sectioning compressive sensing microscope (CSM). Optics Express. 18: 24565-78. PMID 21164803 DOI: 10.1364/Oe.18.024565 |
0.362 |
|
| 2010 |
Ye PD, Gu JJ, Wu YQ, Xu M, Xuan Y, Shen T, Neal AT. ALD high-k as a common gate stack solution for nano-electronics Ecs Transactions. 28: 51-68. DOI: 10.1149/1.3372563 |
0.516 |
|
| 2010 |
Gu JJ, Liu YQ, Xu M, Celler GK, Gordon RG, Ye PD. High performance atomic-layer-deposited LaLuO3 /Ge -on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer Applied Physics Letters. 97. DOI: 10.1063/1.3462303 |
0.359 |
|
| 2010 |
Wang W, Deng J, Hwang JCM, Xuan Y, Wu Y, Ye PD. Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 96: 072102. DOI: 10.1063/1.3315870 |
0.459 |
|
| 2008 |
Aguirre-Tostado FS, Milojevic M, Choi KJ, Kim HC, Hinkle CL, Vogel EM, Kim J, Yang T, Xuan Y, Ye PD, Wallace RM. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters. 93. DOI: 10.1063/1.2961003 |
0.314 |
|
| 2008 |
Yang T, Liu Y, Ye PD, Xuan Y, Pal H, Lundstrom MS. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92. DOI: 10.1063/1.2953080 |
0.339 |
|
| 2008 |
Li N, Harmon ES, Hyland J, Salzman DB, Ma TP, Xuan Y, Ye PD. Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric Applied Physics Letters. 92: 143507. DOI: 10.1063/1.2908926 |
0.329 |
|
| 2007 |
Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/Nnano.2007.151 |
0.408 |
|
| 2007 |
Ye P, Lu ZL, Du BM, Chen Z, Wu YF, Yu XH, Zhao YC. Effect of xuezhikang on cardiovascular events and mortality in elderly patients with a history of myocardial infarction: a subgroup analysis of elderly subjects from the China Coronary Secondary Prevention Study. Journal of the American Geriatrics Society. 55: 1015-22. PMID 17608873 DOI: 10.1111/j.1532-5415.2007.01230.x |
0.312 |
|
| 2007 |
Lin HC, Yang T, Sharifi H, Kim SK, Xuan Y, Shen T, Mohammadi S, Ye PD. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 91: 212101. DOI: 10.1063/1.2814052 |
0.347 |
|
| 2007 |
Yang T, Xuan Y, Zemlyanov D, Shen T, Wu YQ, Woodall JM, Ye PD, Aguirre-Tostado FS, Milojevic M, McDonnell S, Wallace RM. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric Applied Physics Letters. 91: 142122. DOI: 10.1063/1.2798499 |
0.308 |
|
| 2007 |
Lin HC, Kim SK, Chang D, Xuan Y, Mohammadi S, Ye PD, Lu G, Facchetti A, Marks TJ. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics Applied Physics Letters. 91: 092103. DOI: 10.1063/1.2776013 |
0.317 |
|
| 2006 |
Lin HC, Ye PD, Xuan Y, Lu G, Facchetti A, Marks TJ. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics Applied Physics Letters. 89: 142101. DOI: 10.1063/1.2358202 |
0.329 |
|
| 2006 |
Frank MM, Asenov A, Fompeyrine J, Seo JW, Ye P. E-MRS IUMRS ICEM 2006 Symposium B: From strained silicon to nanotubes—Novel channels for field effect devices Materials Science and Engineering: B. 135: 177-178. DOI: 10.1016/J.Mseb.2006.08.001 |
0.336 |
|
| 2005 |
Ye PD, Yang B, Ng KK, Bude J, Wilk GD, Halder S, Hwang JCM. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 86: 063501. DOI: 10.1063/1.1861122 |
0.309 |
|
| 2003 |
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, et al. Advances in high κ gate dielectrics for Si and III-V semiconductors Journal of Crystal Growth. 251: 645-650. DOI: 10.1016/S0022-0248(02)02192-9 |
0.411 |
|
| 1997 |
Ye P, Weiss D, Gerhardts R, Nickel H. Magnetoresistance oscillations induced by periodically arranged micromagnets (invited) Journal of Applied Physics. 81: 5444-5448. DOI: 10.1063/1.364565 |
0.321 |
|
| Show low-probability matches. |