Year |
Citation |
Score |
2006 |
D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207 |
0.571 |
|
2006 |
Chizmeshya AVG, Ritter C, Tolle J, Cook C, Menéndez J, Kouvetakis J. Fundamental Studies of P(GeH3)3, As(GeH 3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors Chemistry of Materials. 18: 6266-6277. DOI: 10.1021/Cm061696J |
0.598 |
|
2006 |
D'Costa VR, Cook CS, Menéndez J, Tolle J, Kouvetakis J, Zollner S. Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313. DOI: 10.1016/J.Ssc.2006.02.023 |
0.584 |
|
2005 |
Cook CS, D'Costa V, Kouvetakis J, Zollner S, Menéndez J. Compositional dependence of critical point transitions in Ge 1-xSn x alloys Aip Conference Proceedings. 772: 65-66. DOI: 10.1063/1.1993997 |
0.573 |
|
2005 |
Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078 |
0.604 |
|
2004 |
Aella P, Cook C, Tolle J, Zollner S, Chizmeshya AVG, Kouvetakis J. Optical and structural properties of Si xSn yGe 1-x-y alloys Applied Physics Letters. 84: 888-890. DOI: 10.1063/1.1645324 |
0.647 |
|
2004 |
Cook CS, Zollner S, Bauer MR, Aella P, Kouvetakis J, Menendez J. Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD Thin Solid Films. 455: 217-221. DOI: 10.1016/J.Tsf.2003.11.277 |
0.645 |
|
2004 |
Zollner S, Liu R, Volinsky AA, White T, Nguyen BY, Cook CS. Gate oxide metrology and silicon piezooptics Thin Solid Films. 455: 261-265. DOI: 10.1016/J.Tsf.2003.11.276 |
0.31 |
|
2004 |
Cook CS, Daly T, Liu R, Canonico M, Xie Q, Gregory RB, Zollner S. Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films. 455: 794-797. DOI: 10.1016/J.Tsf.2003.11.265 |
0.353 |
|
2003 |
Xie Q, Liu R, Wang X, Canonico M, Duda E, Lu S, Cook C, Volinsky AA, Zollner S, Thomas SG, White T, Barr A, Sadaka M, Nguyen B. Characterization Techniques for Evaluating Strained Si CMOS Materials Characterization and Metrology For Ulsi Technology. 683: 223-227. DOI: 10.1063/1.1622475 |
0.412 |
|
2003 |
Bauer MR, Cook CS, Aella P, Tolle J, Kouvetakis J, Crozier PA, Chizmeshya AVG, Smith DJ, Zollner S. SnGe superstructure materials for Si-based infrared optoelectronics Applied Physics Letters. 83: 3489-3491. DOI: 10.1063/1.1622435 |
0.636 |
|
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