Candi S. Cook, Ph.D.
Affiliations: | 2006 | Arizona State University, Tempe, AZ, United States |
Area:
Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Candi Cook"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| John Kouvetakis | grad student | 2006 | Arizona State | |
| (Growth and optical properties of novel doped and undoped group IV materials based on silicon, germanium, and tin.) | ||||
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Publications
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| D'Costa VR, Cook CS, Birdwell AG, et al. (2006) Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73 |
| Chizmeshya AVG, Ritter C, Tolle J, et al. (2006) Fundamental Studies of P(GeH3)3, As(GeH 3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors Chemistry of Materials. 18: 6266-6277 |
| D'Costa VR, Cook CS, Menéndez J, et al. (2006) Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313 |
| Cook CS, D'Costa V, Kouvetakis J, et al. (2005) Compositional dependence of critical point transitions in Ge 1-xSn x alloys Aip Conference Proceedings. 772: 65-66 |
| Roucka R, Tolle J, Cook C, et al. (2005) Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3 |
| Aella P, Cook C, Tolle J, et al. (2004) Optical and structural properties of Si xSn yGe 1-x-y alloys Applied Physics Letters. 84: 888-890 |
| Cook CS, Zollner S, Bauer MR, et al. (2004) Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD Thin Solid Films. 455: 217-221 |
| Zollner S, Liu R, Volinsky AA, et al. (2004) Gate oxide metrology and silicon piezooptics Thin Solid Films. 455: 261-265 |
| Cook CS, Daly T, Liu R, et al. (2004) Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films. 455: 794-797 |
| Xie Q, Liu R, Wang X, et al. (2003) Characterization Techniques for Evaluating Strained Si CMOS Materials Characterization and Metrology For Ulsi Technology. 683: 223-227 |