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Ali Mokhberi, Ph.D. - Publications

Affiliations: 
2003 Stanford University, Palo Alto, CA 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Aboy M, Pelaz L, Marqués LA, Barbolla J, Mokhberi A, Takamura Y, Griffin PB, Plummer JD. Atomistic modeling of B activation and deactivation for ultra-shallow junction formation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 151-154. DOI: 10.1109/SISPAD.2003.1233659  0.563
2003 Aboy M, Pelaz L, Marqués LA, Barbolla J, Mokhberi A, Takamura Y, Griffin PB, Plummer JD. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles Applied Physics Letters. 83: 4166-4168. DOI: 10.1063/1.1628391  0.419
2002 Mokhberi A, Griffin PB, Plummer JD, Paton E, McCoy S, Elliott K. A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon Ieee Transactions On Electron Devices. 49: 1183-1191. DOI: 10.1109/Ted.2002.1013274  0.419
2002 Mokhberi A, Kasnavi R, Griffin PB, Plummer JD. Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si Applied Physics Letters. 80: 3530-3532. DOI: 10.1063/1.1479458  0.438
2002 Mokhberi A, Pelaz L, Aboy M, Marques L, Barbolla J, Paton E, McCoy S, Ross J, Elliott K, Gelpey J, Griffin PB, Plummer JD. A physics based approach to ultra-shallow p+-junction formation at the 32 nm node Technical Digest - International Electron Devices Meeting. 879-882.  0.323
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