| Year |
Citation |
Score |
| 2019 |
Zulauf G, Tong Z, Plummer JD, Rivas-Davila JM. Active Power Device Selection in High- and Very-High-Frequency Power Converters Ieee Transactions On Power Electronics. 34: 6818-6833. DOI: 10.1109/Tpel.2018.2874420 |
0.329 |
|
| 2019 |
Tong Z, Zulauf G, Xu J, Plummer JD, Rivas-Davila J. Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes Ieee Journal of Emerging and Selected Topics in Power Electronics. 7: 865-878. DOI: 10.1109/Jestpe.2019.2904290 |
0.373 |
|
| 2016 |
Bai X, Chen C, Mukherjee N, Griffin PB, Plummer JD. Rapid Melt Growth of Single Crystal InGaAs on Si Substrates Advances in Materials Science and Engineering. 2016: 1-5. DOI: 10.1155/2016/7139085 |
0.385 |
|
| 2014 |
Bai X, Chen CY, Griffin PB, Plummer JD. Si incorporation from the seed into Ge stripes crystallized using rapid melt growth Applied Physics Letters. 104. DOI: 10.1063/1.4863976 |
0.408 |
|
| 2013 |
Zhang Z, Chen CY, Crnogorac F, Chen SL, Griffin PB, Pease RF, Plummer JD, Wong SS. Low-temperature monolithic three-layer 3-D process for FPGA Ieee Electron Device Letters. 34: 1044-1046. DOI: 10.1109/Led.2013.2266111 |
0.383 |
|
| 2010 |
Koh HYS, Chen SL, Griffin PB, Plummer JD. High quality single-crystal laterally graded SiGe on insulator by rapid melt growth Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3436665 |
0.374 |
|
| 2010 |
Chen SL, Griffin PB, Plummer JD. Single-crystal gaas and gasb on insulator on bulk Si substrates based on rapid melt growth Ieee Electron Device Letters. 31: 597-599. DOI: 10.1109/Led.2010.2045875 |
0.38 |
|
| 2010 |
Agah A, Vleugels K, Griffin PB, Ronaghi M, Plummer JD, Wooley BA. A high-resolution low-power incrementalΣADC with extended range for biosensor arrays Ieee Journal of Solid-State Circuits. 45: 1099-1110. DOI: 10.1109/Jssc.2010.2048493 |
0.543 |
|
| 2009 |
Chen SL, Griffin PB, Plummer JD. Negative differential resistance circuit design and memory applications Ieee Transactions On Electron Devices. 56: 634-640. DOI: 10.1109/Ted.2009.2014194 |
0.307 |
|
| 2009 |
Onal C, Woo R, Koh HYS, Griffin PB, Plummer JD. A novel depletion-IMOS (DIMOS) device with improved reliability and reduced operating voltage Ieee Electron Device Letters. 30: 64-67. DOI: 10.1109/Led.2008.2008029 |
0.344 |
|
| 2008 |
Feng J, Thareja G, Kobayashi M, Chen S, Poon A, Bai Y, Griffin PB, Wong SS, Nishi Y, Plummer JD. High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts Ieee Electron Device Letters. 29: 805-807. DOI: 10.1109/Led.2008.2000613 |
0.379 |
|
| 2007 |
Cho HJ, Plummer JD. Modeling of surrounding gate MOSFETs with bulk trap states Ieee Transactions On Electron Devices. 54: 166-169. DOI: 10.1109/Ted.2006.887521 |
0.323 |
|
| 2007 |
Feng J, Woo R, Chen S, Liu Y, Griffin PB, Plummer JD. P-channel germanium FinFET based on rapid melt growth Ieee Electron Device Letters. 28: 637-639. DOI: 10.1109/Led.2007.899329 |
0.686 |
|
| 2007 |
Cho H, Greene BJ, Hoyt JL, Plummer JD. Mechanism of solid phase crystallization of prepatterned nanoscale α-Si pillars Journal of Applied Physics. 101: 104905. DOI: 10.1063/1.2734531 |
0.355 |
|
| 2006 |
Jain SH, Griffin PB, Plummer JD. Novel methods for ultrashallow low resistance junction formation Ecs Transactions. 3: 45-56. DOI: 10.1149/1.2356263 |
0.578 |
|
| 2006 |
Jameson JR, Griffin PB, Plummer JD, Nishi Y. Charge trapping in high-k gate stacks due to the bilayer structure itself Ieee Transactions On Electron Devices. 53: 1858-1867. DOI: 10.1109/Ted.2006.877700 |
0.324 |
|
| 2006 |
Feng J, Liu Y, Griffin PB, Plummer JD. Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate Ieee Electron Device Letters. 27: 911-913. DOI: 10.1109/Led.2006.883286 |
0.618 |
|
| 2006 |
Jameson JR, Harrison W, Griffin PB, Plummer JD, Nishi Y. A semiclassical model of dielectric relaxation in glasses Journal of Applied Physics. 100. DOI: 10.1063/1.2397323 |
0.303 |
|
| 2005 |
Liu Y, Deal MD, Plummer JD. Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates Journal of the Electrochemical Society. 152: G688-G693. DOI: 10.1149/1.1946368 |
0.568 |
|
| 2005 |
Agah A, Hassibi A, Plummer JD, Griffin PB. Design requirements for integrated biosensor arrays Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5699: 403-413. DOI: 10.1117/12.591300 |
0.53 |
|
| 2005 |
Jain SH, Griffin PB, Plummer JD, McCoy S, Gelpey J, Selinger T, Downey DF. Low resistance, low-leakage ultrashallow p+-junction formation using millisecond flash anneals Ieee Transactions On Electron Devices. 52: 1610-1615. DOI: 10.1109/Ted.2005.850621 |
0.632 |
|
| 2005 |
Gopalakrishnan K, Woo R, Jungemann C, Griffin PB, Plummer JD. Impact ionization MOS (I-MOS) - Part II : Experimental results Ieee Transactions On Electron Devices. 52: 77-84. DOI: 10.1109/Ted.2004.841345 |
0.706 |
|
| 2005 |
Gopalakrishnan K, Griffin PB, Plummer JD. Impact ionization MOS (I-MOS) - Part I : Device and circuit simulations Ieee Transactions On Electron Devices. 52: 69-76. DOI: 10.1109/Ted.2004.841344 |
0.584 |
|
| 2005 |
Gopalakrishnan K, Woo R, Shenoy R, Jono Y, Griffin PB, Plummer JD. Novel very high IE structures based on the directed BBHE mechanism for ultralow-power flash memories Ieee Electron Device Letters. 26: 212-215. DOI: 10.1109/Led.2005.843784 |
0.563 |
|
| 2005 |
Liang Y, Nix WD, Griffin PB, Plummer JD. Critical thickness enhancement of epitaxial SiGe films grown on small structures Journal of Applied Physics. 97. DOI: 10.1063/1.1854204 |
0.489 |
|
| 2004 |
Agah A, Aghajan M, Mashayekhi F, Amini S, Davis RW, Plummer JD, Ronaghi M, Griffin PB. A multi-enzyme model for Pyrosequencing. Nucleic Acids Research. 32: e166. PMID 15576673 DOI: 10.1093/Nar/Gnh159 |
0.527 |
|
| 2004 |
Plummer JD. Silicon-based Devices and Technology for the Nanoscale Era The Japan Society of Applied Physics. 2004: 4-5. DOI: 10.7567/Ssdm.2004.Pl-2 |
0.353 |
|
| 2004 |
Liu FY, Griffin PB, Plummer JD, Lyding JW, Moran JM, Richards JF, Kulig L. Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 422. DOI: 10.1116/1.1643054 |
0.345 |
|
| 2004 |
Jain SH, Griffin PB, Plummer JD, Mccoy S, Gelpey J, Selinger T, Downey DF. Metastable boron active concentrations in Si using flash assisted solid phase epitaxy Journal of Applied Physics. 96: 7357-7360. DOI: 10.1063/1.1814792 |
0.592 |
|
| 2004 |
Liu Y, Deal MD, Plummer JD. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates Applied Physics Letters. 84: 2563-2565. DOI: 10.1063/1.1691175 |
0.599 |
|
| 2004 |
Takamura Y, Marshall AF, Mehta A, Arthur J, Griffin PB, Plummer JD, Patel JR. Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon Journal of Applied Physics. 95: 3968-3976. DOI: 10.1063/1.1666975 |
0.375 |
|
| 2003 |
Aboy M, Pelaz L, Marqués LA, Barbolla J, Mokhberi A, Takamura Y, Griffin PB, Plummer JD. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles Applied Physics Letters. 83: 4166-4168. DOI: 10.1063/1.1628391 |
0.773 |
|
| 2003 |
Chui CO, Gopalakrishnan K, Griffin PB, Plummer JD, Saraswat KC. Activation and diffusion studies of ion-implanted p and n dopants in germanium Applied Physics Letters. 83: 3275-3277. DOI: 10.1063/1.1618382 |
0.65 |
|
| 2003 |
Jain SH, Griffin PB, Plummer JD. Hall measurements of bilayer structures Journal of Applied Physics. 93: 1060-1063. DOI: 10.1063/1.1529093 |
0.541 |
|
| 2002 |
Sahiner MA, Novak SW, Woicik JC, Takamura Y, Griffin PB, Plummer JD. The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS. Mrs Proceedings. 717. DOI: 10.1557/Proc-717-C3.6 |
0.327 |
|
| 2002 |
Ngau JL, Griffin PB, Plummer JD. Silicon orientation effects in the initial regime of wet oxidation Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1491986 |
0.754 |
|
| 2002 |
Kwong M, Kasnavi R, Griffin P, Plummer J, Dutton R. Impact of lateral source/drain abruptness on device performance Ieee Transactions On Electron Devices. 49: 1882-1890. DOI: 10.1109/Ted.2002.806790 |
0.362 |
|
| 2002 |
Mokhberi A, Griffin PB, Plummer JD, Paton E, McCoy S, Elliott K. A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon Ieee Transactions On Electron Devices. 49: 1183-1191. DOI: 10.1109/Ted.2002.1013274 |
0.777 |
|
| 2002 |
Ural A, Griffin PB, Plummer JD. Atomic-scale diffusion mechanisms via intermediate species Physical Review B. 65. DOI: 10.1103/Physrevb.65.134303 |
0.587 |
|
| 2002 |
Liu Y, Deal MD, Saraswat KC, Plummer JD. Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si Applied Physics Letters. 81: 4634-4636. DOI: 10.1063/1.1527977 |
0.67 |
|
| 2002 |
Takamura Y, Vailionis A, Marshall AF, Griffin PB, Plummer JD. Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study Journal of Applied Physics. 92: 5503-5507. DOI: 10.1063/1.1510953 |
0.366 |
|
| 2002 |
Takamura Y, Jain SH, Griffin PB, Plummer JD. Thermal stability of dopants in laser annealed silicon Journal of Applied Physics. 92: 230-234. DOI: 10.1063/1.1481975 |
0.607 |
|
| 2002 |
Takamura Y, Griffin PB, Plummer JD. Physical processes associated with the deactivation of dopants in laser annealed silicon Journal of Applied Physics. 92: 235-244. DOI: 10.1063/1.1481974 |
0.351 |
|
| 2002 |
Mokhberi A, Kasnavi R, Griffin PB, Plummer JD. Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si Applied Physics Letters. 80: 3530-3532. DOI: 10.1063/1.1479458 |
0.796 |
|
| 2001 |
Takamura Y, Jain S, Griffin PB, Plummer JD. A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J7.3 |
0.614 |
|
| 2001 |
Ngau JL, Griffin PB, Plummer JD. A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J6.10 |
0.775 |
|
| 2001 |
Date CK, Plummer JD. Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs Ieee Transactions On Electron Devices. 48: 2690-2694. DOI: 10.1109/16.974691 |
0.768 |
|
| 2001 |
Date CK, Plummer JD. Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs Ieee Transactions On Electron Devices. 48: 2684-2689. DOI: 10.1109/16.974690 |
0.762 |
|
| 2001 |
Ural A, Griffin PB, Plummer JD. Silicon self-diffusion under extrinsic conditions Applied Physics Letters. 79: 4328-4330. DOI: 10.1063/1.1425953 |
0.628 |
|
| 2001 |
Ngau JL, Griffin PB, Plummer JD. Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation Journal of Applied Physics. 90: 1768-1778. DOI: 10.1063/1.1384488 |
0.775 |
|
| 2001 |
Kim DK, Nix WD, Vinci RP, Deal MD, Plummer JD. Study of the effect of grain boundary migration on hillock formation in Al thin films Journal of Applied Physics. 90: 781-788. DOI: 10.1063/1.1381045 |
0.501 |
|
| 2000 |
Ural A, Griffin PB, Plummer JD. Ural, griffin, and plummer reply: Physical Review Letters. 85: 4836. PMID 11082665 DOI: 10.1103/Physrevlett.85.4836 |
0.479 |
|
| 2000 |
Anghel C, Hefyene N, Ionescu A, Declercq M, Tringe J, Plummer J. Pseudo-MOS Operation of Ultra-Narrow Polycrystalline Silicon Wires: Electrical Characterization and Memory Effects Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F12.4.1 |
0.702 |
|
| 2000 |
Kasnavi R, Griffin PB, Plummer JD. A Comparative Study of Dose Loss and Diffusion for B11 and BF2 Implants Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B4.3 |
0.344 |
|
| 2000 |
Ural A, Koh S, Griffin PB, Plummer JD. What Does Self-Diffusion Tell Us about Ultra Shallow Junctions? Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B4.11 |
0.632 |
|
| 2000 |
Kim DK, Nix WD, Arzt E, Deal MD, Plummer JD. Diffusional hillock formation in Al thin films controlled by creep Materials Research Society Symposium - Proceedings. 594: 129-134. DOI: 10.1557/Proc-594-129 |
0.487 |
|
| 2000 |
Kim DK, Nix WD, Deal MD, Plummer JD. Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation Journal of Materials Research. 15: 1709-1718. DOI: 10.1557/Jmr.2000.0246 |
0.491 |
|
| 2000 |
Tringe JW, Deal MD, Plummer JD. Transparent probe test structure for electrical and physical characterization of defects in thin films Journal of the Electrochemical Society. 147: 4633-4638. DOI: 10.1149/1.1394115 |
0.651 |
|
| 2000 |
Tringe JW, Deal MD, Plummer JD. Diffraction-based transmission electron microscope technique for measuring average grain size Electrochemical and Solid-State Letters. 3: 520-523. DOI: 10.1149/1.1391197 |
0.609 |
|
| 2000 |
Tringe JW, Deal MD, Plummer JD. Hydrogen passivation in plasma-etched polycrystalline silicon resistors Electrochemical and Solid-State Letters. 3: 517-519. DOI: 10.1149/1.1391196 |
0.647 |
|
| 2000 |
Ionescu AM, Tringe JW, Chovet A, Plummer J. On a novel technique for the electrical characterization of polycrystalline Silicon European Solid-State Device Research Conference. 420-423. DOI: 10.1109/ESSDERC.2000.194804 |
0.651 |
|
| 2000 |
Tringe JW, Plummer JD. Electrical and structural properties of polycrystalline silicon Journal of Applied Physics. 87: 7913-7926. DOI: 10.1063/1.373475 |
0.638 |
|
| 2000 |
Kasnavi R, Sun Y, Mo R, Pianetta P, Griffin PB, Plummer JD. Characterization of arsenic dose loss at the Si/SiO2 interface Journal of Applied Physics. 87: 2255-2260. DOI: 10.1063/1.372169 |
0.362 |
|
| 2000 |
Kim DK, Heiland B, Nix WD, Arzt E, Deal MD, Plummer JD. Microstructure of thermal hillocks on blanket Al thin films Thin Solid Films. 371: 278-282. DOI: 10.1016/S0040-6090(00)00971-8 |
0.51 |
|
| 1999 |
Ural A, Griffin PB, Plummer JD. Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures Mrs Proceedings. 568. DOI: 10.1557/Proc-568-97 |
0.628 |
|
| 1999 |
Yu GM, Griffin PB, Plummer JD. Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy Mrs Proceedings. 568. DOI: 10.1557/Proc-568-233 |
0.393 |
|
| 1999 |
Ural A, Griffin PB, Plummer JD. Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects Physical Review Letters. 83: 3454-3457. DOI: 10.1103/Physrevlett.83.3454 |
0.596 |
|
| 1999 |
Ural A, Griffin PB, Plummer JD. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon Journal of Applied Physics. 85: 6440-6446. DOI: 10.1063/1.370285 |
0.608 |
|
| 1999 |
Herrera-Gómez A, Rousseau PM, Woicik JC, Kendelewicz T, Plummer J, Spicer WE. Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy Journal of Applied Physics. 85: 1429-1437. DOI: 10.1063/1.369274 |
0.36 |
|
| 1999 |
Ural A, Griffin PB, Plummer JD. Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures Physica B: Condensed Matter. 273: 512-515. DOI: 10.1016/S0921-4526(99)00541-4 |
0.631 |
|
| 1998 |
Auth CP, Plummer JD. A simple model for threshold voltage of surrounding-gate MOSFET's Ieee Transactions On Electron Devices. 45: 2381-2383. DOI: 10.1109/16.726665 |
0.341 |
|
| 1998 |
Leung Y, Paul AK, Plummer JD, Wong SS. Lateral IGBT in thin SOI for high voltage, high speed power IC Ieee Transactions On Electron Devices. 45: 2251-2254. DOI: 10.1109/16.725263 |
0.37 |
|
| 1998 |
Rousseau PM, Griffin PB, Fang WT, Plummer JD. Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study Journal of Applied Physics. 84: 3593-3601. DOI: 10.1063/1.368593 |
0.4 |
|
| 1998 |
Ural A, Griffin PB, Plummer JD. Experimental evidence for a dual vacancy-interstitial mechanism of self-diffusion in silicon Applied Physics Letters. 73: 1706-1708. DOI: 10.1063/1.122252 |
0.614 |
|
| 1998 |
Segal J, Patt B, Iwanczyk J, Vilkelis G, Plummer J, Hedman B, Hodgson K. A new structure for controlling dark current due to surface generation in drift detectors Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 414: 307-316. DOI: 10.1016/S0168-9002(98)00570-1 |
0.318 |
|
| 1997 |
Cho H, Griffin PB, Plummer JD. Cross sectional Tem Sample Preparation Using E-Beam Lithography and Reactive ion Etching Mrs Proceedings. 480. DOI: 10.1557/Proc-480-217 |
0.3 |
|
| 1997 |
Chao HS, Griffin PB, Plummer JD. The Influence of Amorphizing Implants on Boron Diffusion in Silicon Mrs Proceedings. 469. DOI: 10.1557/Proc-469-347 |
0.413 |
|
| 1997 |
Plummer JD. Defects and Diffusion issues for the Manufacturing of Semiconductors in the 21st Century Mrs Proceedings. 469. DOI: 10.1557/Proc-469-3 |
0.374 |
|
| 1997 |
Huang SF, Griffin PB, Rissman P, Plummer JD. Nitrogen-doped poly spacer local oxidation Ieee Electron Device Letters. 18: 346-348. DOI: 10.1109/55.596932 |
0.387 |
|
| 1997 |
Leung Y, Kuehne SC, Huang VSK, Nguyen CT, Paul AK, Plummer JD, Wong SS. Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI Ieee Electron Device Letters. 18: 13-15. DOI: 10.1109/55.553061 |
0.352 |
|
| 1997 |
Rousseau PM, Crowder SW, Griffin PB, Plummer JD. Arsenic deactivation enhanced diffusion and the reverse short-channel effect Ieee Electron Device Letters. 18: 42-44. DOI: 10.1109/55.553038 |
0.409 |
|
| 1997 |
Biegel BA, Plummer JD. Applied bias slewing in transient wigner function simulation of resonant tunneling diodes Ieee Transactions On Electron Devices. 44: 733-737. DOI: 10.1109/16.568033 |
0.328 |
|
| 1997 |
Chase MP, Deal MD, Plummer JD. Diffusion modeling of zinc implanted into GaAs Journal of Applied Physics. 81: 1670-1676. DOI: 10.1063/1.364024 |
0.365 |
|
| 1997 |
Massengale A, Ueda T, Harris J, Tai C, Deal M, Plummer J, Fernandez R. Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs Electronics Letters. 33: 1087. DOI: 10.1049/El:19970734 |
0.337 |
|
| 1996 |
Rousseau PM, Griffin PB, Luning S, Plummer JD. Model for mobility degradation in highly doped arsenic layers Ieee Transactions On Electron Devices. 43: 2025-2027. DOI: 10.1109/16.543044 |
0.326 |
|
| 1996 |
Rousseau PM, Griffin PB, Kuehne SC, Plummer JD. Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices Ieee Transactions On Electron Devices. 43: 547-553. DOI: 10.1109/16.485536 |
0.416 |
|
| 1996 |
Chao HS, Crowder SW, Griffin PB, Plummer JD. Species and dose dependence of ion implantation damage induced transient enhanced diffusion Journal of Applied Physics. 79: 2352-2363. DOI: 10.1063/1.361162 |
0.353 |
|
| 1996 |
Chao HS, Griffin PB, Plummer JD, Rafferty CS. The dose, energy, and time dependence of silicon self‐implantation induced transient enhanced diffusion at 750 °C Applied Physics Letters. 69: 2113-2115. DOI: 10.1063/1.116897 |
0.388 |
|
| 1996 |
Chao HS, Griffin PB, Plummer JD. Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon Applied Physics Letters. 68: 3570-3572. DOI: 10.1063/1.116640 |
0.389 |
|
| 1996 |
Fang TT, Fang WTC, Griffin PB, Plummer JD. Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2 Applied Physics Letters. 68: 791-793. DOI: 10.1063/1.116534 |
0.419 |
|
| 1996 |
Herrera-Gómez A, Rousseau PM, Materlik G, Kendelewicz T, Woicik JC, Griffin PB, Plummer J, Spicer WE. Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes Applied Physics Letters. 68: 3090-3092. DOI: 10.1063/1.116432 |
0.37 |
|
| 1996 |
Iwanczyk J, Patt B, Segal J, Plummer J, Vilkelis G, Hedman B, Hodgson K, Cox A, Rehn L, Metz J. Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 380: 288-294. DOI: 10.1016/S0168-9002(96)00493-7 |
0.342 |
|
| 1995 |
Fang WTC, Griffin PB, Plummer JD. Implant Enhanced Diffusion of Boron in Silicon Germanium Mrs Proceedings. 379. DOI: 10.1557/Proc-379-379 |
0.434 |
|
| 1995 |
Pein H, Plummer JD. Performance of the 3-D PENCIL Flash EPROM Cell and Memory Array Ieee Transactions On Electron Devices. 42: 1982-1991. DOI: 10.1109/16.469407 |
0.322 |
|
| 1995 |
Cao M, Zhao T, Saraswat KC, Plummer JD. Study on Hydrogenation of Polysilicon Thin Film Transistors by Ion Implantation Ieee Transactions On Electron Devices. 42: 1134-1140. DOI: 10.1109/16.387248 |
0.551 |
|
| 1995 |
Hu JC, Deal MD, Plummer JD. Modeling the diffusion of implanted Be in GaAs Journal of Applied Physics. 78: 1606-1613. DOI: 10.1063/1.360254 |
0.367 |
|
| 1995 |
Hu JC, Deal MD, Plummer JD. Modeling the diffusion of grown-in Be in molecular beam epitaxy GaAs Journal of Applied Physics. 78: 1595-1605. DOI: 10.1063/1.360253 |
0.367 |
|
| 1995 |
Fang WTC, Fang TT, Griffin PB, Plummer JD. Surface and bulk point defect generation in Czochralski and float zone type silicon wafers Applied Physics Letters. 2085. DOI: 10.1063/1.115592 |
0.349 |
|
| 1995 |
Lawther DW, Myler U, Simpson PJ, M. Rousseau P, Griffin PB, Plummer JD. Vacancy generation resulting from electrical deactivation of arsenic Applied Physics Letters. 67: 3575. DOI: 10.1063/1.115322 |
0.311 |
|
| 1994 |
Zhao T, Cao M, Saraswat KC, Plummer JD. A Vertical Submicron Polysilicon Thin-Film Transistor Using A Low Temperature Process Ieee Electron Device Letters. 15: 415-417. DOI: 10.1109/55.320986 |
0.544 |
|
| 1994 |
Cao M, Zhao T, Saraswat KC, Plummer JD. A Simple EEPROM Cell using Twin Polysilicon thin Film Transistors Ieee Electron Device Letters. 15: 304-306. DOI: 10.1109/55.296224 |
0.509 |
|
| 1994 |
Watt JT, Plummer JD. Dispersion of MOS Capacitance-Voltage Characteristics Resulting from the Random Channel Dopant Ion Distribution Ieee Transactions On Electron Devices. 41: 2222-2232. DOI: 10.1109/16.333845 |
0.358 |
|
| 1994 |
Ver Ploeg E, Nguyen C, Wong S, Plummer J. Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's Ieee Transactions On Electron Devices. 41: 970-977. DOI: 10.1109/16.293310 |
0.347 |
|
| 1994 |
Snoeys W, Plummer J, Parker S, Kenney C. PIN detector arrays and integrated readout circuitry on high-resistivity float-zone silicon Ieee Transactions On Electron Devices. 41: 903-912. DOI: 10.1109/16.293300 |
0.323 |
|
| 1994 |
Crowder SW, Hsieh CJ, Griffin PB, Plummer JD. Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator films Journal of Applied Physics. 76: 2756-2764. DOI: 10.1063/1.357539 |
0.462 |
|
| 1994 |
Crowder SW, Griffin PB, Plummer JD. Characterization of interface topography of the buried Si-SiO2 interface in silicon-on-insulator material by atomic force microscopy Applied Physics Letters. 65: 1698-1699. DOI: 10.1063/1.112968 |
0.357 |
|
| 1994 |
Rousseau PM, Griffin PB, Plummer JD. Electrical deactivation of arsenic as a source of point defects Applied Physics Letters. 65: 578-580. DOI: 10.1063/1.112301 |
0.394 |
|
| 1994 |
Crowder SW, Griffin PB, Hsieh CJ, Wei GY, Plummer JD, Allen LP. Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon-on-insulator material Applied Physics Letters. 64: 3264-3266. DOI: 10.1063/1.111304 |
0.396 |
|
| 1994 |
Griffin PB, Lever RF, Packan PA, Plummer JD. Doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold Applied Physics Letters. 64: 1242-1244. DOI: 10.1063/1.110852 |
0.407 |
|
| 1994 |
Scott JA, Croke ET, Plummer JD. High mobility Si1-xGex PMOS transistors to 5K Le Journal De Physique Iv. 4: C6-69-C6-74. DOI: 10.1051/Jp4:1994611 |
0.391 |
|
| 1993 |
Liu D, Plummer J. Design and analysis of a new conductivity-modulated power MOSFET Ieee Transactions On Electron Devices. 40: 428-438. DOI: 10.1109/16.182524 |
0.327 |
|
| 1993 |
Roth DJ, Huang RYS, Plummer JD, Dutton RW. Silicon interstitial absorption during thermal oxidation at 900 °C by extended defects formed via silicon implantation Applied Physics Letters. 62: 2498-2500. DOI: 10.1063/1.109331 |
0.389 |
|
| 1992 |
Croke ET, Harrell MJ, Mierzwinski ME, Plummer JD. Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics Mrs Proceedings. 281. DOI: 10.1557/Proc-281-415 |
0.4 |
|
| 1992 |
Kistler N, Ver Ploeg E, Woo J, Plummer J. Sub-quarter-micrometer CMOS on ultrathin (400 AA) SOI Ieee Electron Device Letters. 13: 235-237. DOI: 10.1109/55.145038 |
0.382 |
|
| 1992 |
Taft R, Plummer J, Iyer S. Ge/sub x/Si/sub 1-x//silicon inversion-base transistors: experimental demonstration Ieee Transactions On Electron Devices. 39: 2119-2126. DOI: 10.1109/16.155894 |
0.363 |
|
| 1992 |
Petti CJ, Plummer JD. The Field-Assisted Turn-Off Thyristor: A Regenerative Device with Voltage-Controlled Turn-Off Ieee Transactions On Electron Devices. 39: 1946-1953. DOI: 10.1109/16.144688 |
0.358 |
|
| 1992 |
Robinson HG, Deal MD, Amaratunga G, Griffin PB, Stevenson DA, Plummer JD. Modeling uphill diffusion of Mg implants in GaAs using suprem-iv Journal of Applied Physics. 71: 2615-2623. DOI: 10.1063/1.351354 |
0.371 |
|
| 1992 |
Perozziello EA, Griffin PB, Plummer JD. Retarded diffusion of Sb in a high concentration As background during silicon oxidation Applied Physics Letters. 61: 303-305. DOI: 10.1063/1.107919 |
0.371 |
|
| 1991 |
Allen EL, Pass CJ, Deal MD, Plummer JD, Chia VFK. The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors Mrs Proceedings. 240. DOI: 10.1557/Proc-240-709 |
0.389 |
|
| 1991 |
Ritts R, Raje P, Plummer J, Saraswat K, Cham K. Merged BiCMOS logic to extend the CMOS/BiCMOS performance crossover below 2.5-V supply Ieee Journal of Solid-State Circuits. 26: 1606-1614. DOI: 10.1109/4.98979 |
0.518 |
|
| 1991 |
MacWilliams K, Plummer J. Device physics and technology of complementary silicon MESFET's for VLSI applications Ieee Transactions On Electron Devices. 38: 2619-2631. DOI: 10.1109/16.158684 |
0.399 |
|
| 1991 |
Jones KS, Allen EL, Robinson HG, Stevenson DA, Deal MD, Plummer JD. Extended defects of ion‐implanted GaAs Journal of Applied Physics. 70: 6790-6795. DOI: 10.1063/1.349854 |
0.369 |
|
| 1991 |
Allen EL, Pass CJ, Deal MD, Plummer JD, Chia VFK. Suppression of Al‐Ga interdiffusion by a WNxfilm on an AlxGa1−xAs/AlAs superlattice structure Applied Physics Letters. 59: 3252-3254. DOI: 10.1063/1.105748 |
0.347 |
|
| 1990 |
Boisvert DM, Plummer JD. The Complementary Insulated-Gate Bipolar Transistor (CIGBT)—A New Power Switching Device Ieee Electron Device Letters. 11: 368-370. DOI: 10.1109/55.62958 |
0.361 |
|
| 1990 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA. Reduction of lateral phosphorus diffusion in CMOS n-wells Ieee Transactions On Electron Devices. 37: 806-807. DOI: 10.1109/16.47790 |
0.378 |
|
| 1990 |
Allen EL, Deal MD, Plummer JD. The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide Journal of Applied Physics. 67: 3311-3314. DOI: 10.1063/1.345366 |
0.349 |
|
| 1990 |
Plummer JD. Process and device modeling Microelectronics Journal. 21: 7-20. DOI: 10.1016/0026-2692(90)90023-V |
0.32 |
|
| 1989 |
Allen E, Deal M, Plummer J. Diffusion of Ion-Implanted Tin in Gallium Arsenide Mrs Proceedings. 163. DOI: 10.1557/Proc-163-685 |
0.384 |
|
| 1989 |
Taft RC, Plummer JD, Iyer SS. Demonstration of a p-Channel BICFET in the GexSi1-x/Si System Ieee Electron Device Letters. 10: 14-16. DOI: 10.1109/55.31666 |
0.349 |
|
| 1989 |
Watt JT, Fishbein BJ, Plummer JD. Characterization of Surface Mobility in MOS Structures Containing Interfacial Cesium Ions Ieee Transactions On Electron Devices. 36: 96-100. DOI: 10.1109/16.21184 |
0.361 |
|
| 1989 |
Fahey PM, Griffin PB, Plummer JD. Point defects and dopant diffusion in silicon Reviews of Modern Physics. 61: 289-384. DOI: 10.1103/Revmodphys.61.289 |
0.385 |
|
| 1989 |
Ahn ST, Kennel HW, Tiller WA, Plummer JD. Vacancy supersaturation in Si under SiO2 caused by SiO formation during annealing in Ar Journal of Applied Physics. 65: 2957-2963. DOI: 10.1063/1.343412 |
0.429 |
|
| 1989 |
Vanasupa LS, Deal MD, Plummer JD. Effects of stress on the electrical activation of implanted Si in GaAs Applied Physics Letters. 55: 274-276. DOI: 10.1063/1.101927 |
0.359 |
|
| 1988 |
Liu DKY, Plummer JD. A Novel Trench-Injector Power Device with Low on Resistance and High Switching Speed Ieee Electron Device Letters. 9: 321-323. DOI: 10.1109/55.731 |
0.338 |
|
| 1988 |
Boisvert DM, Liu DKY, Plummer JD. Circuit Approaches to Increasing IGBT Switching Speed Ieee Journal of Solid-State Circuits. 23: 1276-1279. DOI: 10.1109/4.5958 |
0.365 |
|
| 1988 |
Liu DKY, Plummer JD. VIB-2 Device Physics and Optimization of Conductivity-Modulated Power MOSFET's Ieee Transactions On Electron Devices. 35: 2457-2458. DOI: 10.1109/16.8899 |
0.367 |
|
| 1988 |
Watt JT, Plummer JD. IIA-4 Surface Potential Fluctuations in MOS Devices Induced by the Random Distribution of Channel Dopant Ions Ieee Transactions On Electron Devices. 35: 2431. DOI: 10.1109/16.8837 |
0.331 |
|
| 1988 |
Woo JC, Plummer JD. Optimization of Silicon Bipolar Transistors for High Current Gain at Low Temperatures Ieee Transactions On Electron Devices. 35: 1311-1321. DOI: 10.1109/16.2553 |
0.348 |
|
| 1988 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA. Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films Journal of Applied Physics. 64: 4914-4919. DOI: 10.1063/1.342441 |
0.355 |
|
| 1988 |
Reed ML, Plummer JD. Chemistry of Si-SiO2 interface trap annealing Journal of Applied Physics. 63: 5776-5793. DOI: 10.1063/1.340317 |
0.435 |
|
| 1988 |
Fishbein BJ, Plummer JD. Range distribution of implanted cesium ions in silicon dioxide films Journal of Applied Physics. 63: 5887-5889. DOI: 10.1063/1.340283 |
0.303 |
|
| 1988 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA. Enhanced Sb diffusion in Si under thermal Si3N4 films during annealing in Ar Applied Physics Letters. 53: 1593-1595. DOI: 10.1063/1.100439 |
0.388 |
|
| 1988 |
Ahn ST, Kennel HW, Plummer JD, Tiller WA, Rek ZU, Stock SR. Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon Applied Physics Letters. 53: 34-36. DOI: 10.1063/1.100114 |
0.405 |
|
| 1987 |
Henning AK, Plummer JD. Thermionic Emission Probability for Semiconductor-Insulator Interfaces Ieee Transactions On Electron Devices. 34: 2211-2212. DOI: 10.1109/T-Ed.1987.23218 |
0.359 |
|
| 1987 |
Henning AK, Chan NN, Watt JT, Plummer JD. Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology Ieee Transactions On Electron Devices. 34: 64-74. DOI: 10.1109/T-Ed.1987.22886 |
0.358 |
|
| 1987 |
Watt JT, Fishbein BJ, Plummer JD. A Low-Temperature NMOS Technology with Cesium-Implanted Load Devices Ieee Transactions On Electron Devices. 34: 28-38. DOI: 10.1109/T-Ed.1987.22882 |
0.349 |
|
| 1987 |
Griffin PB, Ahn ST, Tiller WA, Plummer JD. Model for bulk effects on Si interstitial diffusivity in silicon Applied Physics Letters. 51: 115-117. DOI: 10.1063/1.98996 |
0.416 |
|
| 1987 |
Reed ML, Plummer JD. Si-SiO2 interface trap production by low-temperature thermal processing Applied Physics Letters. 51: 514-516. DOI: 10.1063/1.98383 |
0.379 |
|
| 1987 |
Fishbein BJ, Plummer JD. Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry Applied Physics Letters. 50: 1200-1202. DOI: 10.1063/1.97910 |
0.429 |
|
| 1987 |
Massoud HZ, Plummer JD. Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime Journal of Applied Physics. 62: 3416-3423. DOI: 10.1063/1.339305 |
0.316 |
|
| 1987 |
Ahn ST, Griffin PB, Shott JD, Plummer JD, Tiller WA. A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion Journal of Applied Physics. 62: 4745-4755. DOI: 10.1063/1.339028 |
0.412 |
|
| 1987 |
Bronner GB, Plummer JD. Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials Journal of Applied Physics. 61: 5286-5298. DOI: 10.1063/1.338264 |
0.436 |
|
| 1986 |
Reed ML, Plummer JD. Two reaction model of interface trap annealing Ieee Transactions On Nuclear Science. 33: 1198-1202. DOI: 10.1109/Tns.1986.4334578 |
0.408 |
|
| 1986 |
Williams RK, Sevilla LT, Ruetz E, Plummer JD. A DI/JI-Compatible Monolithic High-Voltage Multiplexer Ieee Transactions On Electron Devices. 33: 1977-1984. DOI: 10.1109/T-Ed.1986.22856 |
0.38 |
|
| 1986 |
Patton GL, Bravman JC, Plummer JD. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors Ieee Transactions On Electron Devices. 33: 1754-1768. DOI: 10.1109/T-Ed.1986.22738 |
0.663 |
|
| 1986 |
MacWilliams KP, Plummer JD. Thermal Instability of Schottky Diode Barrier Heights Modified by Inert Ion Sputter-Etching Damage Ieee Electron Device Letters. 7: 247-249. DOI: 10.1109/Edl.1986.26360 |
0.409 |
|
| 1986 |
Dunham ST, Plummer JD. Point-defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment Journal of Applied Physics. 59: 2551-2561. DOI: 10.1063/1.337004 |
0.326 |
|
| 1986 |
Dunham ST, Plummer JD. Point-defect generation during oxidation of silicon in dry oxygen. I. Theory Journal of Applied Physics. 59: 2541-2550. DOI: 10.1063/1.337003 |
0.327 |
|
| 1985 |
Reed ML, Plummer JD. Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing Mrs Proceedings. 52. DOI: 10.1557/Proc-52-333 |
0.387 |
|
| 1985 |
Massoud HZ, Plummer JD, Irene EA. Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms Journal of the Electrochemical Society. 132: 2693-2700. DOI: 10.1149/1.2113649 |
0.351 |
|
| 1985 |
Massoud HZ, Plummer JD, Irene EA. Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results Journal of the Electrochemical Society. 132: 2685-2693. DOI: 10.1149/1.2113648 |
0.329 |
|
| 1985 |
Griffin PB, Fahey PM, Plummer JD, Dutton RW. Measurement of silicon interstitial diffusivity Applied Physics Letters. 47: 319-321. DOI: 10.1063/1.96205 |
0.427 |
|
| 1985 |
Reed ML, Fishbein B, Plummer JD. Rapid thermal annealing of interface states in aluminum gate metal-oxide-silicon capacitors Applied Physics Letters. 47: 400-402. DOI: 10.1063/1.96124 |
0.399 |
|
| 1985 |
Sturm JC, Plummer JD, Gibbons JF. Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface Applied Physics Letters. 46: 1171-1173. DOI: 10.1063/1.95748 |
0.387 |
|
| 1985 |
Bronner GB, Plummer JD. Silicon interstitial generation by argon implantation Applied Physics Letters. 46: 510-512. DOI: 10.1063/1.95575 |
0.422 |
|
| 1985 |
Bravman JC, Patton GL, Plummer JD. Structure and morphology of polycrystalline silicon-single crystal silicon interfaces Journal of Applied Physics. 57: 2779-2782. DOI: 10.1063/1.335421 |
0.646 |
|
| 1984 |
Bravman JC, Patton GL, Sinclair R, Plummer JD. Morphological Studies of Polysilicon Emitter Contacts Mrs Proceedings. 37. DOI: 10.1557/Proc-37-461 |
0.642 |
|
| 1984 |
Bronner GB, Plummer JD. Physical Modeling of Backside Gettering Mrs Proceedings. 36. DOI: 10.1557/Proc-36-49 |
0.393 |
|
| 1984 |
Goodwin SH, Plummer JD. Electrical Performance and Physics of Isolation Region Structures for VLSI Ieee Transactions On Electron Devices. 31: 861-872. DOI: 10.1109/T-Ed.1984.21623 |
0.334 |
|
| 1984 |
Bronner GB, Plummer JD. Characterization of Transient Process Phenomena Using a Temperature-Tolerant Metallurgy Ieee Electron Device Letters. 5: 75-77. DOI: 10.1109/Edl.1984.25837 |
0.361 |
|
| 1984 |
Akinwande AI, Ho CP, Plummer JD. Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2 interface Applied Physics Letters. 45: 263-265. DOI: 10.1063/1.95165 |
0.376 |
|
| 1983 |
Ho CP, Plummer JD, Hansen SE, Dutton RW. VLSI Process Modeling—SUPREM III Ieee Transactions On Electron Devices. 30: 1438-1453. DOI: 10.1109/T-Ed.1983.21322 |
0.331 |
|
| 1981 |
Stork JMC, Plummer JD. Small Geometry Depleted Base Bipolar Transistors (BSIT)-VLSI Devices? Ieee Transactions On Electron Devices. 28: 1354-1363. DOI: 10.1109/T-Ed.1981.20613 |
0.366 |
|
| 1980 |
Sun SC, Plummer JD. Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces Ieee Transactions On Electron Devices. 27: 1497-1508. DOI: 10.1109/T-Ed.1980.20063 |
0.406 |
|
| 1980 |
Plummer JD, Scharf BW. Insulated-Gate Planar Thyristors: I—Structure and Basic Operation Ieee Transactions On Electron Devices. 27: 380-387. DOI: 10.1109/T-Ed.1980.19871 |
0.369 |
|
| 1980 |
Sun SC, Plummer JD. Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors Ieee Transactions On Electron Devices. 27: 356-367. DOI: 10.1109/T-Ed.1980.19868 |
0.368 |
|
| 1979 |
Ho CP, Plummer JD. Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II. Comparison with Experiment and Discussion Journal of the Electrochemical Society. 126: 1523-1530. DOI: 10.1149/1.2129321 |
0.39 |
|
| 1979 |
Swartz RG, Plummer JD, Meindl JD. An Improved Wedge-Type Backing for Piezoelectric Transducers Ieee Transactions On Sonics and Ultrasonics. 26: 140-141. DOI: 10.1109/T-Su.1979.31079 |
0.503 |
|
| 1979 |
Ho CP, Plummer JD. Improved MOS Device Performance Through the Enhanced Oxidation of Heavily Doped n+ Silicon Ieee Transactions On Electron Devices. 26: 623-630. DOI: 10.1109/T-Ed.1979.19469 |
0.408 |
|
| 1978 |
Plummer J, Swartz R, Maginness M, Beaudouin J, Meindl J. Two-dimensional transmit/receive ceramic piezoelectric arrays: Construction and performance Ieee Transactions On Sonics and Ultrasonics. 25: 273-280. DOI: 10.1109/T-Su.1978.31027 |
0.516 |
|
| 1978 |
Johannessen JS, Spicer WE, Gibbons JF, Plummer JD, Taylor NJ. Observation of phosphorus pile‐up at the SiO2‐Si interface Journal of Applied Physics. 49: 4453-4458. DOI: 10.1063/1.325502 |
0.357 |
|
| 1978 |
HO CP, PLUMMER JD, MEINDL JD, DEAL BE. ChemInform Abstract: THERMAL OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON Chemischer Informationsdienst. 9. DOI: 10.1002/Chin.197831026 |
0.571 |
|
| 1976 |
Maginness MG, Plummer JD, Beaver WL, Meindl JD. State-of-the-art in two-dimensional ultrasonic transducer array technology. Medical Physics. 3: 312-8. PMID 979920 DOI: 10.1118/1.594247 |
0.545 |
|
| 1976 |
Declercq MJ, Plummer JD. Avalanche Breakdown in High-Voltage D-MOS Devices Ieee Transactions On Electron Devices. 23: 1-4. DOI: 10.1109/T-Ed.1976.18337 |
0.346 |
|
| 1972 |
Plummer J, Meindl J. MOS electronics for a portable reading aid for the blind Ieee Journal of Solid-State Circuits. 7: 111-119. DOI: 10.1109/Jssc.1972.1050256 |
0.521 |
|
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