| Year |
Citation |
Score |
| 2011 |
Liu Z, Cui S, Shekhter P, Sun X, Kornblum L, Yang J, Eizenberg M, Chang-Liao KS, Ma TP. Effect of H on interface properties of Al2O3/In0.53Ga0.47As Applied Physics Letters. 99: 222104. DOI: 10.1063/1.3665395 |
0.304 |
|
| 2011 |
Shekhter P, Kornblum L, Liu Z, Cui S, Ma TP, Eizenberg M. Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface Applied Physics Letters. 99: 232103. DOI: 10.1063/1.3664778 |
0.327 |
|
| 2010 |
Reiner JW, Cui S, Liu Z, Wang M, Ahn CH, Ma TP. Inelastic electron tunneling spectroscopy study of thin gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 2962-8. PMID 20354976 DOI: 10.1002/Adma.200904311 |
0.485 |
|
| 2010 |
Cui S, Peng C, Zhang W, Sun X, Yang J, Liu Z, Kornblum L, Eizenberg M, Ma TP. High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$) Nonvolatile Memory Technology Ieee Electron Device Letters. 31: 1443-1445. DOI: 10.1109/Led.2010.2072902 |
0.309 |
|
| 2010 |
Liu Z, Cui S, Kornblum L, Eizenberg M, Chang M, Ma TP. Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si Applied Physics Letters. 97: 202905. DOI: 10.1063/1.3518478 |
0.354 |
|
| 2010 |
Liu Z, Ma TP. Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy Applied Physics Letters. 97: 172102. DOI: 10.1063/1.3506904 |
0.323 |
|
| 2010 |
Liu Z, Guo D, Xiu K, Henson WK, Oldiges PJ. Intrinsic effective mobility extraction with extremely scaled gate dielectrics Applied Physics Letters. 97: 23509. DOI: 10.1063/1.3464565 |
0.31 |
|
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