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Chendong Zhu, Ph.D. - Publications

Affiliations: 
2007 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Yang X, Hao J, Mao Y, Jin ZQ, Cao R, Zhu CH, Liu XH, Liu C, Ding XL, Wang XD, Chen D, Wu XZ. bFGF promotes migration and induces cancer-associated fibroblasts differentiation of mouse bone mesenchymal stem cells to promote tumor growth. Stem Cells and Development. PMID 27484709 DOI: 10.1089/scd.2016.0217  0.398
2008 Lee SY, Zhu C, Cressler JD, Lee SH. Emitter scaling dependence of mixed-mode reliability degradation in silicon-germanium heterojunction bipolar transistors Japanese Journal of Applied Physics. 47: 5309-5313. DOI: 10.1143/Jjap.47.5309  0.597
2007 Cheng P, Jun B, Sutton A, Appaswamy A, Zhu C, Cressler JD, Schrimpf RD, Fleetwood DM. Understanding radiation- and hot carrier-induced damage processes in SiGe HBTs using mixed-mode electrical stress Ieee Transactions On Nuclear Science. 54: 1938-1945. DOI: 10.1109/Tns.2007.909985  0.684
2007 Appaswamy A, Bellini M, Kuo WML, Cheng P, Yuan J, Zhu C, Cressler JD, Niu G, Joseph AJ. Impact of scaling on the inverse-mode operation of SiGe HBTs Ieee Transactions On Electron Devices. 54: 1492-1501. DOI: 10.1109/Ted.2007.896570  0.651
2007 Yuan J, Cressler JD, Zhu C, Cui Y, Niu G, Liang Q, Joseph AJ. An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516. DOI: 10.1109/Ted.2006.890392  0.675
2007 Cheng P, Zhu C, Appaswamy A, Cressler JD. A new current-sweep method for assessing the mixed-mode damage spectrum of SiGe HBTs Ieee Transactions On Device and Materials Reliability. 7: 479-487. DOI: 10.1109/Tdmr.2007.907410  0.714
2005 Zhu C, Liang Q, Al-Huq RA, Cressler JD, Lu Y, Chen T, Joseph AJ, Niu G. Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs Ieee Transactions On Device and Materials Reliability. 5: 142-148. DOI: 10.1109/Tdmr.2005.843835  0.678
2005 Haugerud BM, Nayeem MB, Krithivasan R, Lu Y, Zhu C, Cressler JD, Belford RE, Joseph AJ. The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology Solid-State Electronics. 49: 986-990. DOI: 10.1016/J.Sse.2005.03.019  0.646
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