Boy Tanto, Ph.D. - Publications
Affiliations: | 2009 | University of Wisconsin, Madison, Madison, WI |
Area:
Condensed Matter Physics, Materials Science Engineering, Electronics and Electrical EngineeringYear | Citation | Score | |||
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2012 | Paskiewicz DM, Tanto B, Savage DE, Evans PG, Eriksson MA, Lagally MG. Single-crystalline elastically relaxed SiGe nanomembranes: Substrates for epitaxial growth of defect-free strained-Si/SiGe heterostructures 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 28-29. DOI: 10.1109/ISTDM.2012.6222441 | 0.777 | |||
2011 | Paskiewicz DM, Tanto B, Savage DE, Lagally MG. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. Acs Nano. 5: 5814-22. PMID 21650206 DOI: 10.1021/Nn201547K | 0.77 | |||
2011 | Tanto B, Doiron CF, Lu TM. Large artificial anisotropic growth rate in on-lattice simulation of obliquely deposited nanostructures. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 83: 016703. PMID 21405791 DOI: 10.1103/PhysRevE.83.016703 | 0.413 | |||
2009 | Euaruksakul C, Chen F, Tanto B, Ritz CS, Paskiewicz DM, Himpsel FJ, Savage DE, Liu Z, Yao Y, Liu F, Lagally MG. Relationships between strain and band structure in Si(001) and Si(110) nanomembranes Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115323 | 0.559 | |||
2008 | Euaruksakul C, Li ZW, Zheng F, Himpsel FJ, Ritz CS, Tanto B, Savage DE, Liu XS, Lagally MG. Influence of strain on the conduction band structure of strained silicon nanomembranes. Physical Review Letters. 101: 147403. PMID 18851573 DOI: 10.1103/PhysRevLett.101.147403 | 0.643 | |||
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