| Year |
Citation |
Score |
| 2002 |
Chen Y, Wang G, Li D, Oak SK, Shrivastav G, Rubin L, Tasch AF, Banerjee SK. A universal ion implantation model for all species into single-crystal silicon Ieee Transactions On Electron Devices. 49: 1519-1525. DOI: 10.1109/Ted.2002.801300 |
0.341 |
|
| 2002 |
Li D, Shrivastav G, Wang G, Chen Y, Lin L, Oak S, Tasch A, Banerjee S. Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials Ieee Transactions On Electron Devices. 49: 1172-1182. DOI: 10.1109/Ted.2002.1013273 |
0.378 |
|
| 2002 |
Chen Y, Li D, Wang G, Lin L, Oak S, Shrivastav G, Tasch AF, Banerjee SK. Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas Journal of Computational Electronics. 1: 241-245. DOI: 10.1023/A:1020789811331 |
0.334 |
|
| 2002 |
Shrivastav G, Li D, Chen Y, Wang G, Lin L, Oak S, Tasch AF, Banerjee SK. An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials Journal of Computational Electronics. 1: 247-250. DOI: 10.1023/A:1020741928169 |
0.347 |
|
| 2001 |
Mudanai S, Register LF, Tasch AF, Banerjee SK. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147. DOI: 10.1109/55.910624 |
0.397 |
|
| 2001 |
Wang G, Chen Y, Li D, Oak S, Srivastav G, Banerjee S, Tasch A, Merrill P, Bleiler R. Oxygen recoil implant from SiO2 layers into single-crystalline silicon Journal of Applied Physics. 89: 5997-6001. DOI: 10.1063/1.1355699 |
0.378 |
|
| 2001 |
Li D, Wang G, Chen Y, Lin L, Shrivastav G, Oak S, Tasch A, Banerjee S, Obradovic B. A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 184: 500-508. DOI: 10.1016/S0168-583X(01)00699-1 |
0.364 |
|
| 2001 |
Li D, Wang G, Chen Y, Shrivastav G, Oak S, Tasch A, Banerjee S. A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures Journal of Computational Electronics. 1: 332-335. DOI: 10.1007/978-3-7091-6244-6_75 |
0.334 |
|
| 2001 |
Mudanai S, Register LF, Tasch AF, Banerjee SK. A new and accurate quantum mechanical compact model for NMOS gate capacitance Annual Device Research Conference Digest. 87-88. |
0.307 |
|
| 2000 |
Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577 |
0.363 |
|
| 2000 |
Mudanai S, Fan YY, Ouyang Q, Tasch AF, Banerjee SK. Modeling of direct tunneling current through gate dielectric stacks Ieee Transactions On Electron Devices. 47: 1851-1857. DOI: 10.1109/16.870561 |
0.403 |
|
| 2000 |
Chindalore G, Shih WK, Jallepalli S, Hareland SA, Tasch AF, Maziar CM. An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si Ieee Transactions On Electron Devices. 47: 643-646. DOI: 10.1109/16.824741 |
0.804 |
|
| 2000 |
Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724. DOI: 10.1063/1.1311304 |
0.416 |
|
| 2000 |
Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee SK. SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658. DOI: 10.1063/1.1309018 |
0.456 |
|
| 2000 |
Kencke DL, Ouyang Q, Chen W, Wang H, Mudanai S, Tasch A, Banerjee SK. Tinkering with the well-tempered MOSFET: Source-channel barrier modulation with high-permittivity dielectrics Superlattices and Microstructures. 27: 207-214. DOI: 10.1006/Spmi.1999.0803 |
0.433 |
|
| 2000 |
Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724. |
0.321 |
|
| 2000 |
Fan YY, Mudanai S, Qi W, Lee JC, Tasch AF, Register LF, Banerjee SK. Modeling high K gate current from p-type Si inversion layers Annual Device Research Conference Digest. 63-64. |
0.317 |
|
| 2000 |
Ouyang Q, Chen XD, Mudanai S, Kencke DL, Wang X, Tasch AF, Register LF, Banerjee SK. Two-dimensional bandgap engineering in a novel Si/SiGe pMOSFET with enhanced device performance and scalability International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 151-154. |
0.378 |
|
| 1999 |
Obradovic B, Wang G, Balamurugan G, Chen Y, Tasch AF, Snell CM, Lee M, Wagner D, Jackson J, Baumann S, Bleiler R, Merril PB, Chia V. Experimental verification of a new physically based low energy (<5 keV) ion implant model Proceedings of the International Conference On Ion Implantation Technology. 2: 700-703. DOI: 10.1117/12.323984 |
0.304 |
|
| 1998 |
Wang H, Shih W, Green S, Hareland S, Maziar CM, Tasch AF. Hydrodynamic (HD) Simulation of N-Channel MOSFET'swith a Computationally Efficient Inversion LayerQuantization Model Vlsi Design. 8: 423-428. DOI: 10.1155/1998/19078 |
0.795 |
|
| 1998 |
Hareland SA, Manassian M, Shih WK, Jallepalli S, Wang H, Chindalore GL, Tasch AF, Maziar CM. Computationally efficient models for quantization effects in MOS electron and hole accumulation layers Ieee Transactions On Electron Devices. 45: 1487-1493. DOI: 10.1109/16.701479 |
0.817 |
|
| 1998 |
Tian S, Morris MF, Morris SJ, Obradovic B, Wang G, Tasch AF, Snell CM. A detailed physical model for ion implant induced damage in silicon Ieee Transactions On Electron Devices. 45: 1226-1238. DOI: 10.1109/16.678523 |
0.402 |
|
| 1998 |
Hareland SA, Jallepalli S, Shih WK, Wang H, Chindalore GL, Tasch AF, Maziar CM. A physically-based model for quantization effects in hole inversion layers Ieee Transactions On Electron Devices. 45: 179-186. DOI: 10.1109/16.658828 |
0.82 |
|
| 1998 |
Chindalore GL, McKeon JB, Mudanai S, Hareland SA, Shih WK, Wang C, Tasch AF, Maziar CM. An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers Ieee Transactions On Electron Devices. 45: 502-511. DOI: 10.1109/16.658687 |
0.791 |
|
| 1998 |
Shih W, Wang EX, Jallepalli S, Leon F, Maziar CM, Tasch AF. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide Solid-State Electronics. 42: 997-1006. DOI: 10.1016/S0038-1101(98)00097-5 |
0.411 |
|
| 1998 |
Mudanai S, Chindalore G, Shih WK, Wang H, Tasch AF, Maziar CM. Temperature characterization and modeling of electron and hole mobilities in MOS accumulation layers Annual Device Research Conference Digest. 20-21. |
0.429 |
|
| 1998 |
Shih WK, Jallepalli S, Yeap CF, Rashed M, Maziar CM, Tasch AF. A Monte Carlo study of electron transport in silicon nMOSFET inversion layers Vlsi Design. 6: 53-56. |
0.316 |
|
| 1997 |
Morris SJ, Obradovic B, Yang SH, Tasch AF, Rubin L. Electronic stopping power model in single-crystal silicon from a few KeV to several MeV Materials Research Society Symposium - Proceedings. 439: 107-112. DOI: 10.1557/Proc-439-107 |
0.384 |
|
| 1997 |
Tian S, Morris M, Morris SJ, Obradovic B, Tasch AF. Modeling of damage evolution during ion implantation into silicon: A Monte Carlo approach Materials Research Society Symposium - Proceedings. 439: 101-106. DOI: 10.1557/Proc-439-101 |
0.37 |
|
| 1997 |
Chindalore G, Hareland SA, Jallepalli S, Tasch AF, Maziar CM, Chia VKF, Smith S. Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers Ieee Electron Device Letters. 18: 206-208. DOI: 10.1109/55.568765 |
0.814 |
|
| 1997 |
McKeon JB, Chindalore G, Hareland SA, Shih WK, Wang C, Tasch AF, Maziar CM. Experimental determination of electron and hole mobilities in MOS accumulation layers Ieee Electron Device Letters. 18: 200-202. DOI: 10.1109/55.568762 |
0.788 |
|
| 1997 |
Hareland SA, Jallepalli S, Chindalore G, Shih WK, Tasch AF, Maziar CM. A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices Ieee Transactions On Electron Devices. 44: 1172-1173. DOI: 10.1109/16.595947 |
0.811 |
|
| 1997 |
Jallepalli S, Bude J, Shih WK, Pinto MR, Maziar CM, Tasch AF. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics Ieee Transactions On Electron Devices. 44: 297-303. DOI: 10.1109/16.557719 |
0.499 |
|
| 1997 |
Hasnat K, Yeap C, Jallepalli S, Hareland SA, Shih W-, Agostinelli VM, Tasch AF, Maziar CM. Thermionic emission model of electron gate current in submicron NMOSFETs Ieee Transactions On Electron Devices. 44: 129-138. DOI: 10.1109/16.554802 |
0.791 |
|
| 1997 |
Jallepalli S, Rashed M, Shih WK, Maziar CM, Tasch AF. A full-band Monte Carlo model for hole transport in silicon Journal of Applied Physics. 81: 2250-2255. DOI: 10.1063/1.364287 |
0.404 |
|
| 1996 |
Parab KB, Yang SH, Morris SJ, Tian S, Morris M, Obradovich B, Tasch AF, Kamenitsa D, Simonton R, Magee C. Detailed analysis and computationally efficient modeling of ultra-shallow dopant profiles obtained by low energy B, BF2, and As ion implantation Materials Research Society Symposium - Proceedings. 396: 769-774. DOI: 10.1557/Proc-396-769 |
0.323 |
|
| 1996 |
Ghante V, Lam LM, Morris S, Yang SH, Tasch AF. Detailed dependence of implanted phosphorus profiles in (100) single-crystal Si on key implant parameters Materials Research Society Symposium - Proceedings. 396: 715-720. DOI: 10.1557/Proc-396-715 |
0.353 |
|
| 1996 |
Morris S, Lim D, Yang SH, Tian S, Parab K, Tasch AF. Development and demonstration of a two-dimensional, accurate and computationally-efficient model for boron implantation into single-crystal silicon through overlying oxide layers Materials Research Society Symposium - Proceedings. 396: 27-32. DOI: 10.1557/Proc-396-27 |
0.404 |
|
| 1996 |
Yang S‐, Snell CM, Morris SJ, Tian S, Parab K, Obradovich B, Morris M, Tasch AF. A Monte Carlo binary collision model for BF{sub 2} implants into (100) single-crystal silicon Journal of the Electrochemical Society. 143: 3784-3790. DOI: 10.1149/1.1837290 |
0.389 |
|
| 1996 |
Parab KB, Yang SH, Morris SJ, Tian S, Tasch AF, Kamenitsa D, Simonton R, Magee C. Analysis of ultrashallow doping profiles obtained by low energy ion implantation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 260-264. DOI: 10.1116/1.588458 |
0.369 |
|
| 1996 |
Wang G, Obradovic B, Chen Y, Li D, Oak S, Srivastav G, Banerjee S, Tasch A. A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 1-19. DOI: 10.1109/Tcad.1996.6449179 |
0.313 |
|
| 1996 |
Chen Y, Obradovic B, Morris M, Wang G, Balamurugan G, Li D, Tasch AF, Kamenitsa D, McCoy W, Baumann S, Bleier R, Sieloff D, Dyer D, Zeitzoff P. Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 1-20. DOI: 10.1109/Tcad.1996.6449175 |
0.358 |
|
| 1996 |
Wang G, Tian S, Morris M, Obradovic B, Balamurugan G, Tasch A, Morris S, Kennel H, Packan P, Magee C, Sheng J, Lowther R, Linn J, Snell C. A computationally efficient ion implantation damage model and its application to multiple implant simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 1-40. DOI: 10.1109/Tcad.1996.6449170 |
0.391 |
|
| 1996 |
Hasnat K, Yeap CF, Jallepalli S, Shih WK, Hareland SA, Agostinelli VM, Tasch AF, Maziar CM. A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's Ieee Transactions On Electron Devices. 43: 1264-1273. DOI: 10.1109/16.506778 |
0.803 |
|
| 1996 |
Hareland SA, Krishnarnurthy S, Jallepalli S, Yeap CF, Hasnat K, Tasch AF, Maziar CM. A computationally efficient model for inversion layer quantization effects in deep submicron JV-channel MOSFET's Ieee Transactions On Electron Devices. 43: 90-96. DOI: 10.1109/16.477597 |
0.825 |
|
| 1996 |
Tasch AF, Banerjee SK. Ultra-shallow junction formation in silicon using ion implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 112: 177-183. DOI: 10.1016/0168-583X(95)01246-X |
0.355 |
|
| 1996 |
Jallepalli S, Shih WK, Bude JD, Pinto MR, Maziar CM, Tasch AF. Understanding the differences in the effective-field dependence of electron and hole inversion layer mobilities Technical Digest - International Electron Devices Meeting. 391-394. |
0.355 |
|
| 1996 |
Jallepalli S, Bude J, Shih WK, Pinto MR, Maziar CM, Tasch AF. Effects of quantization on the electrical characteristics of deep submicron p- and n-MOSFETs Digest of Technical Papers - Symposium On Vlsi Technology. 138-139. |
0.397 |
|
| 1995 |
Yang S-, Morris S, Tian S, Parab K, Tasch AF, Echenique PM, Capaz R, Joannopoulos J. A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon Mrs Proceedings. 389: 77. DOI: 10.1557/Proc-389-77 |
0.382 |
|
| 1995 |
Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ. Adsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1819-1825. DOI: 10.1116/1.579665 |
0.312 |
|
| 1995 |
Yang SH, Lim D, Morris SJ, Tasch AF. Improved efficiency in Monte Carlo simulation of ion implanted impurity profiles in single-crystal materials Nuclear Inst. and Methods in Physics Research, B. 102: 242-246. DOI: 10.1016/0168-583X(95)80149-G |
0.34 |
|
| 1995 |
Tasch AF, Yang SH, Morris SJ. Modeling of ion implantation in single-crystal silicon Nuclear Inst. and Methods in Physics Research, B. 102: 173-179. DOI: 10.1016/0168-583X(95)80137-B |
0.437 |
|
| 1995 |
Hareland SA, Krishnamurthy S, Jallepalli S, Yeap CF, Hasnat K, Tasch AF, Maziar CM. Computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs Technical Digest - International Electron Devices Meeting. 933-936. |
0.46 |
|
| 1995 |
Khan SA, Hasnat K, Tasch AF, Maziar CM. Detailed evaluation of different inversion layer electron and hole mobility models Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 187-192. |
0.425 |
|
| 1995 |
Shih WK, Jallepalli S, Yeap CF, Rashed M, Maziar CM, Tasch AF. Analysis of quantization effects in silicon (100) inversion layers using a Monte Carlo tool Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 201-204. |
0.425 |
|
| 1994 |
Agostinelli VM, Bordelon TJ, Wang X, Hasnat K, Yeap C, Lemersal DB, Tasch AF, Maziar CM. Two-dimensional energy-dependent models for the simulation of substrate current in submicron MOSFET's Ieee Transactions On Electron Devices. 41: 1784-1795. DOI: 10.1109/16.324589 |
0.436 |
|
| 1994 |
Asami S, Russell NM, Mahajan A, Steiner PA, Bonser DJ, Fretwell J, Bannerjee S, Tasch A, White JM, Ekerdt JG. Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6 Applied Surface Science. 359-366. DOI: 10.1016/0169-4332(94)90242-9 |
0.345 |
|
| 1994 |
Yang SH, Morris SJ, Lim DL, Tasch AF, Simonton RB, Kamenitsa D, Magee C, Lux G. An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) silicon Journal of Electronic Materials. 23: 801-808. DOI: 10.1007/Bf02651376 |
0.372 |
|
| 1993 |
Yang S, Lim D, Morris SJ, Tasch AF. A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon Mrs Proceedings. 316. DOI: 10.1557/Proc-316-639 |
0.347 |
|
| 1993 |
Morris SJ, Yang S, Lim DH, Tasch AF. A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon Mrs Proceedings. 316: 623. DOI: 10.1557/Proc-316-623 |
0.307 |
|
| 1993 |
Kinosky D, Qian R, Mahajan A, Thomas S, Banerjee S, Tasch A, Magee C. Control of deposition rate in remote plasma enhanced chemical vapor deposition of GexSi1−x/Si heteroepitaxial films Journal of Vacuum Science & Technology B. 11: 1396-1400. DOI: 10.1116/1.586948 |
0.314 |
|
| 1993 |
Yue C, Martin Agostinelli V, Yeric GM, Tasch AF. Improved Universal MOSFET Electron Mobility Degradation Models for Circuit Simulation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 1542-1546. DOI: 10.1109/43.256929 |
0.413 |
|
| 1993 |
Agostinelli VM, Yeric GM, Tasch AF. Universal MOSFET Hole Mobility Degradation Models for Circuit Simulation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 439-445. DOI: 10.1109/43.215005 |
0.472 |
|
| 1993 |
Wang X, Chandramouli V, Maziar CM, Tasch AF. Simulation program suitable for hot carrier studies: An efficient multiband Monte Carlo model using both full and analytic band structure description for silicon Journal of Applied Physics. 73: 3339-3347. DOI: 10.1063/1.352959 |
0.373 |
|
| 1993 |
Murtaza SS, Qian R, Kinosky D, Mayer R, Tasch AF, Banerjee S, Campbell JC. Room-temperature measurements of strong electroabsorption effect in Ge xSi1-x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 62: 1976-1978. DOI: 10.1063/1.109508 |
0.383 |
|
| 1993 |
Tsai C, Li K, Campbell JC, Tasch A. Photodetectors fabricated from rapid‐thermal‐oxidized porous Si Applied Physics Letters. 62: 2818-2820. DOI: 10.1063/1.109220 |
0.334 |
|
| 1993 |
Hareland SA, Tasch AF, Maziar CM. New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling Electronics Letters. 29: 1894-1896. DOI: 10.1049/El:19931261 |
0.786 |
|
| 1993 |
Klein KM, Park C, Morris S, Yang SH, Tasch AF. A two-dimensional B implantation model for semiconductor process simulation environments Nuclear Inst. and Methods in Physics Research, B. 79: 651-654. DOI: 10.1016/0168-583X(93)95435-8 |
0.43 |
|
| 1993 |
Mahajan A, Irby J, Kinosky D, Qian R, Thomas S, Banerjee S, Tasch A, Picraux T. Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment Thin Solid Films. 225: 177-182. DOI: 10.1016/0040-6090(93)90151-E |
0.315 |
|
| 1992 |
Qian RZ, Kinosky D, Mahajan A, Thomas S, Fretwell J, Munguia P, Banerjee S, Tasch A. Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition Mrs Proceedings. 281. DOI: 10.1557/Proc-281-421 |
0.37 |
|
| 1992 |
Thomas S, Irby J, Kinosky D, Qian R, Iqbal I, Mahajan A, Banerjee S, Tasch A, Magee C. Characterization of In Situ P-Type and N-Type Doped Si and Ge X Si 1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition Mrs Proceedings. 268: 223. DOI: 10.1557/Proc-268-223 |
0.382 |
|
| 1992 |
Kim J, Sudhama C, Chikarmane V, Khamankar R, Lee J, Tasch A. The Impact of Device Asymmetry on the Electrical and Reliability Properties of Ferroelectric PZT for Memory Applications Mrs Proceedings. 265: 313. DOI: 10.1557/Proc-265-313 |
0.307 |
|
| 1992 |
Banerjee S, Tasch A, Hsu T, Qian R, Kinosky D, Irby J, Mahajan A, Thomas S. In Situ Low Temperature Cleaning and Passivation of Silicon by Remote Hydrogen Plasma for Silicon-Based Epitaxy Mrs Proceedings. 259. DOI: 10.1557/Proc-259-43 |
0.325 |
|
| 1992 |
Qian R, Kinosky D, Hsu T, Irby J, Mahajan A, Thomas S, Anthony B, Banerjee S, Tasch A, Rabenberg L, Magee C. Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 1920-1926. DOI: 10.1116/1.578116 |
0.355 |
|
| 1992 |
Chikarmane V, Sudhama C, Kim J, Lee J, Tasch A, Novak S. Effects of post‐deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate titanate (65/35) thin film capacitors Journal of Vacuum Science and Technology. 10: 1562-1568. DOI: 10.1116/1.578045 |
0.324 |
|
| 1992 |
Park C, Simonton RB, Lux GE, Klein KM, Yang SH, Tasch AF. Analysis of ion scattering by thin Si02 layers in boron implants through SiO2 into silicon Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1690-1695. DOI: 10.1116/1.577771 |
0.348 |
|
| 1992 |
Agostinelli VM, Wang XL, Yeap CF, Maziar CM, Tasch AF, Bordelon TJ. An Energy-Dependent Two-Dimensional Substrate Current Model for the Simulation of Submicrometer MOSFET's Ieee Electron Device Letters. 13: 554-556. DOI: 10.1109/55.192837 |
0.459 |
|
| 1992 |
Shin H, Bordelon TJ, Tasch AF, Maziar CM. MOSFET Drain Engineering Analysis for Deep-Submicrometer Dimensions: A New Structural Approach Ieee Transactions On Electron Devices. 39: 1922-1927. DOI: 10.1109/16.144685 |
0.417 |
|
| 1992 |
Klein KM, Park C, Tasch AF. Monte Carlo Simulation of Boron Implantation into Single-Crystal Silicon Ieee Transactions On Electron Devices. 39: 1614-1621. DOI: 10.1109/16.141226 |
0.395 |
|
| 1992 |
Bhattacharya S, Banerjee SK, Lee JC, Tasch AF, Chatterjee A. Parametric Study of Latchup Immunity of Deep Trench-Isolated, Bulk, Nonepitaxial CMOS Ieee Transactions On Electron Devices. 39: 921-931. DOI: 10.1109/16.127484 |
0.356 |
|
| 1992 |
Tasch AF. Accurate and computationally efficient modeling of ion implantation in single-crystal silicon Compel - the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 11: 391-402. DOI: 10.1108/Eb010100 |
0.374 |
|
| 1992 |
Hsu T, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee SK, Tasch A. Remote plasma-enhanced chemical vapor deposition (rpcvd) process for low temperature (<450°c) epitaxy of si and si, 1-xgex Materials and Manufacturing Processes. 7: 593-612. DOI: 10.1080/10426919208947443 |
0.364 |
|
| 1992 |
Hsu T, Lin S, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee SK, Tasch A, Marcus H. Hydrogen desorption on various H‐terminated Si(100) surfaces due to electron beam irradiation: Experiments and modeling Applied Physics Letters. 61: 580-582. DOI: 10.1063/1.107843 |
0.314 |
|
| 1992 |
Tsai C, Li KH, Kinosky DS, Qian RZ, Hsu TC, Irby JT, Banerjee SK, Tasch AF, Campbell JC, Hance BK, White JM. Correlation between silicon hydride species and the photoluminescence intensity of porous silicon Applied Physics Letters. 60: 1700-1702. DOI: 10.1063/1.107190 |
0.323 |
|
| 1992 |
Bordelon TJ, Jun VMAA, Wang XL, Mazia CM, Tasch AF. Relaxation time approximation and mixing of hot and cold electron populations Electronics Letters. 28: 1173-1174. DOI: 10.1049/El:19920740 |
0.386 |
|
| 1992 |
Anthony B, Hsu T, Qian R, Irby J, Kinosky D, Banerjee S, Tasch A, Magee C. Physical and electrical characterization of in situ boron-doped single-crystal silicon films grown at 450°C using remote plasma-enhanced chemical vapor deposition Thin Solid Films. 207: 12-14. DOI: 10.1016/0040-6090(92)90092-P |
0.332 |
|
| 1992 |
Bordelon TJ, Wang XL, Maziar CM, Tasch AF. Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation Solid State Electronics. 35: 131-139. DOI: 10.1016/0038-1101(92)90052-E |
0.484 |
|
| 1992 |
Hsu T, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee S, Magee C, Tasch A. Advances in remote plasma-enhanced chemical vapor deposition for low temperature in situ hydrogen plasma clean and Si and Si 1- x Ge x epitaxy Journal of Electronic Materials. 21: 65-74. DOI: 10.1007/Bf02670922 |
0.36 |
|
| 1992 |
Qian R, Anthony B, Hsu T, Irby J, Kinosky D, Banerjee S, Tasch A. Structural analysis of Ge x Si 1- x /Si layers by remote plasma-enhanced chemical vapor deposition on Si (100) Journal of Electronic Materials. 21: 395-399. DOI: 10.1007/Bf02660402 |
0.389 |
|
| 1992 |
Irby J, Kinosky D, Hsu T, Qian R, Mahajan A, Thomas S, Anthony B, Banerjee S, Tasch A, Magee C. In situ B-doped Si epitaxial films grown at 450° C by remote plasma enhanced chemical vapor deposition: physical and electrical characterization Journal of Electronic Materials. 21: 543-547. DOI: 10.1007/Bf02655622 |
0.385 |
|
| 1992 |
Chikarmane V, Kim J, Sudhama C, Lee J, Tasch A. Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: phase transformation and electrical characteristics Journal of Electronic Materials. 21: 503-512. DOI: 10.1007/Bf02655617 |
0.315 |
|
| 1991 |
Qian R, Chung I, Kinosky D, Hsu T, Irby J, Mahajan A, Thomas S, Banerjee S, Tasch A. Growth and High Resolution Tem Characterization of Ge x Si 1−x /Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition Mrs Proceedings. 235. DOI: 10.1557/Proc-235-811 |
0.305 |
|
| 1991 |
Klein KM, Park C, Yang S, Morris S, Do V, Tasch AF. A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon Mrs Proceedings. 235. DOI: 10.1557/Proc-235-217 |
0.323 |
|
| 1991 |
Gupta P, Park C, Klein K, Yang S, Morris S, Do V, Tasch A, Simonton R, Lux G. The Detailed Variation of Boron and Fluorine Profiles with Tilt and Rotation Angles for BF 2 + ION Implantation in (100) Silicon Mrs Proceedings. 235: 203. DOI: 10.1557/Proc-235-203 |
0.317 |
|
| 1991 |
Park C, Klein KM, Tasch AF, Ziegler JF. Critical angles for channeling of boron ions implanted into single-crystal silicon Journal of the Electrochemical Society. 138: 2107-2115. DOI: 10.1149/1.2085934 |
0.343 |
|
| 1991 |
Bhattacharya S, Banerjee S, Lee J, Tasch A, Chatterjee A. The impact of trench isolation on latch-up immunity in bulk nonepitaxial CMOS Ieee Electron Device Letters. 12: 77-79. DOI: 10.1109/55.75709 |
0.346 |
|
| 1991 |
Agostinelli VM, Shin H, Tasch AF. A Comprehensive Model for Inversion Layer Hole Mobility for Simulation of Submicrometer MOSFET's Ieee Transactions On Electron Devices. 38: 151-159. DOI: 10.1109/16.65749 |
0.359 |
|
| 1991 |
Park C, Klein KM, Tasch AF, Simonton RB, Novak S, Lux G. A comprehensive and computationally efficient modeling strategy for simulation of boron ion implantation into single-crystal silicon with explicit dose and implant angle dependence Compel - the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 10: 331-340. DOI: 10.1108/Eb051710 |
0.382 |
|
| 1991 |
Qian R, Anthony B, Hsu T, Irby J, Kinosky D, Banerjee S, Tasch A, Rabenberg L, Magee C. Crystallographic characterization of GexSi1−x/Si superlattices grown by remote plasma‐enhanced chemical vapor deposition Journal of Applied Physics. 70: 3324-3328. DOI: 10.1063/1.349265 |
0.38 |
|
| 1991 |
Chikarmane V, Sudhama C, Kim J, Lee J, Tasch A, Novak S. Comparative study of the perovskite phase microstructure evolution and electrical properties of lead zirconate titanate thin-film capacitors annealed in oxygen and nitrogen ambients Applied Physics Letters. 59: 2850-2852. DOI: 10.1063/1.106427 |
0.333 |
|
| 1991 |
Kinosky D, Qian R, Irby J, Hsu T, Anthony B, Banerjee S, Tasch A, Magee C, Grove CL. Low-temperature growth of GexSi1-x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 59: 817-819. DOI: 10.1063/1.105272 |
0.317 |
|
| 1991 |
Simonton RB, Kamenitsa DE, Ray AM, Park C, Klein KM, Tasch AF. Channeling control for large tilt angle implantation in Si 〈100〉 Nuclear Inst. and Methods in Physics Research, B. 55: 39-44. DOI: 10.1016/0168-583X(91)96132-5 |
0.321 |
|
| 1991 |
Park C, Klein KM, Tasch AF, Simonton RB, Kamenitsa DE, Novak S. Boron implant profile variation across a single wafer due to electrostatic scanning Nuclear Inst. and Methods in Physics Research, B. 59: 159-163. DOI: 10.1016/0168-583X(91)95198-M |
0.324 |
|
| 1991 |
Klein KM, Park C, Tasch AF. Modeling of cumulative damage effects on ion-implantation profiles Nuclear Inst. and Methods in Physics Research, B. 59: 60-64. DOI: 10.1016/0168-583X(91)95175-D |
0.33 |
|
| 1991 |
Bordelon TJ, Wang XL, Maziar CM, Tasch AF. An evaluation of energy transport models for silicon device simulation Solid State Electronics. 34: 617-628. DOI: 10.1016/0038-1101(91)90136-M |
0.427 |
|
| 1991 |
Shin H, Yeric GM, Tasch AF, Maziar CM. Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers Solid State Electronics. 34: 545-552. DOI: 10.1016/0038-1101(91)90123-G |
0.501 |
|
| 1991 |
Anthony B, Hsu T, Qian R, Irby J, Banerjee S, Tasch A. The use of Langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition Journal of Electronic Materials. 20: 309-313. DOI: 10.1007/Bf02657896 |
0.309 |
|
| 1991 |
Hsu T, Anthony B, Qian R, Irby J, Banerjee S, Tasch A, Lin S, Marcus H, Magee C. Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy Journal of Electronic Materials. 20: 279-287. DOI: 10.1007/Bf02651904 |
0.331 |
|
| 1990 |
Tasch AF, Shin H, Bordelon TJ, Maziar CM. Limitations of LDD Types of Structures in Deep-Submicrometer MOS Technology Ieee Electron Device Letters. 11: 517-519. DOI: 10.1109/55.63018 |
0.382 |
|
| 1990 |
Yeric GM, Tasch AF, Banerjee SK. A Universal MOSFET Mobility Degradation Model for Circuit Simulation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 9: 1123-1126. DOI: 10.1109/43.62736 |
0.49 |
|
| 1990 |
Klein KM, Park C, Tasch AF. Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon Applied Physics Letters. 57: 2701-2703. DOI: 10.1063/1.103804 |
0.313 |
|
| 1990 |
Park C, Klein KM, Tasch AF. Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon Solid State Electronics. 33: 645-650. DOI: 10.1016/0038-1101(90)90176-F |
0.374 |
|
| 1990 |
Hsu T, Breaux L, Anthony B, Banerjee S, Tasch A. Defect microstructure in low temperature epitaxial silicon grown by RPCVD Journal of Electronic Materials. 19: 375-384. DOI: 10.1007/Bf02651300 |
0.344 |
|
| 1989 |
Hsu T, Anthony B, Breaux L, Banerjee S, Tasch A. Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C Mrs Proceedings. 165. DOI: 10.1557/Proc-165-139 |
0.306 |
|
| 1989 |
Shin H, Tasch AF, Maziar CM, Banerjee SK. A New Approach to Verify and Derive a Transverse-Field-Dependent Mobility Model for Electrons in MOS Inversion Layers Ieee Transactions On Electron Devices. 36: 1117-1124. DOI: 10.1109/16.24356 |
0.416 |
|
| 1989 |
Breaux L, Anthony B, Hsu T, Banerjee SK, Tasch A. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition Applied Physics Letters. 55: 1885-1887. DOI: 10.1063/1.102161 |
0.363 |
|
| 1982 |
Lam HW, Sobczak ZP, Pinizzotto RF, Tasch AF. Device Fabrication in {1oo} Silicon-on-Oxide Produced by a Scanning CW-Laser-Induced Lateral Seeding Technique Ieee Transactions On Electron Devices. 29: 389-394. DOI: 10.1109/T-ED.1982.20713 |
0.364 |
|
| 1968 |
Schroder DK, Tasch AF, Sah CT. The Spatial Variation of the Charged Gold Concentration in Silicon P-N Step Junctions Ieee Transactions On Electron Devices. 15: 553-559. DOI: 10.1109/T-Ed.1968.16402 |
0.529 |
|
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