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Donald J. Wolford - Publications

Affiliations: 
Iowa State University, Ames, IA, United States 
Area:
Condensed Matter Physics
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29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Stinaff EA, Wolford DJ, Ver Steeg KW, Hoffmann TD. Acceptorlike behavior of nitrogen deep traps in GaAs:N Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/PhysRevB.73.075203  0.542
1994 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces Physical Review B. 49: 8113-8125. DOI: 10.1103/Physrevb.49.8113  0.337
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Intrinsic, heterointerface excitonic states in GaAs(n)/Al<inf>0.3</inf>Ga<inf>0.7</inf>As(p) double heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2377-2383. DOI: 10.1116/1.585706  0.346
1991 Wolford DJ, Gilliland GD, Kuech TF, Smith LM, Martinsen J, Bradley JA, Tsang CF, Venkatasubramanian R, Ghandi SK, Hjalmarson HP. Intrinsic recombination and interface characterization in "surface-free" GaAs structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2369-2376. DOI: 10.1116/1.585705  0.536
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures Physical Review B. 43: 14251-14254. DOI: 10.1103/PhysRevB.43.14251  0.392
1991 Gilliland GD, Wolford DJ, Northrop GA, Kuech TF, Bradley JA. Dynamics and transport of excitons confined at high-quality GaAs/AlxGa1-xAs interfaces Institute of Physics Conference Series. 120: 413-418.  0.331
1991 Wolford DJ, Gilliland GD, Kuech TF, Martinsen J, Bradley JA, Tsang CF, Venkatasubramanian R, Ghandhi SK, Hjalmarson HP, Klem J. Interface-free GaAs structures. From bulk to the quantum limit Institute of Physics Conference Series. 120: 401-406.  0.4
1990 Smith LM, Wolford DJ, Venkatasubramanian R, Ghandhi SK. Radiative recombination in surface-free n+/n-/n +GaAs homostructures Applied Physics Letters. 57: 1572-1574. DOI: 10.1063/1.103357  0.575
1989 Brown LDL, Jaros M, Wolford DJ. Splitting of the states derived from the bulk X minima in GaAs-AlAs superlattices Physical Review B. 40: 6413-6416. DOI: 10.1103/PhysRevB.40.6413  0.411
1988 Wolford DJ, Kuech TF, Steiner TW, Bradley JA, Gell MA, Ninno D, Jaros M. Electronic structure of quantum-well states revealed under high pressures Superlattices and Microstructures. 4: 525-535. DOI: 10.1016/0749-6036(88)90231-5  0.347
1987 Gell MA, Ninno D, Jaros M, Wolford DJ, Keuch TF, Bradley JA. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGa1-xAs superlattices and multiple-quantum-well structures Physical Review B. 35: 1196-1222. DOI: 10.1103/PhysRevB.35.1196  0.336
1986 Mariette H, Wolford DJ, Bradley JA. Time decays of donor-bound excitons in GaAs under pressure-induced-X crossover Physical Review B. 33: 8373-8378. DOI: 10.1103/PhysRevB.33.8373  0.358
1985 Mariette H, Kash JA, Wolford DJ, Marbeuf A. Exciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N Physical Review B. 31: 5217-5222. DOI: 10.1103/PhysRevB.31.5217  0.423
1985 Reimer JA, Scott BA, Wolford DJ, Nijs J. Low spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition Applied Physics Letters. 46: 369-371. DOI: 10.1063/1.95634  0.305
1985 Wolford DJ, Bradley JA. Pressure dependence of shallow bound states in gallium arsenide Solid State Communications. 53: 1069-1076. DOI: 10.1016/0038-1098(85)90882-8  0.365
1985 Wolford DJ, Bradley JA, Fry K, Thompson J. NITROGEN ISOELECTRONIC TRAP IN GaAs . 627-630.  0.395
1985 Wolford DJ, Bradley JA, Fry K, Thompson J. NITROGEN ISOELECTRONIC TRAP IN GaAs . 627-630.  0.395
1985 Wolford DJ, Mariette H, Bradley JA. PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS Institute of Physics Conference Series. 275-280.  0.358
1983 Kash JA, Collet JH, Wolford DJ, Thompson J. Luminescence decays of N-bound excitons in GsAs1-xPx Physical Review B. 27: 2294-2300. DOI: 10.1103/PhysRevB.27.2294  0.366
1983 Collet JH, Kash JA, Wolford DJ, Thompson J. Transfer of excitons bound to nitrogen in GaAs1-xPx:N Journal of Physics C: Solid State Physics. 16: 1283-1290. DOI: 10.1088/0022-3719/16/7/014  0.365
1983 Meyerson BS, Scott BA, Wolford DJ. The preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition Journal of Applied Physics. 54: 1461-1465. DOI: 10.1063/1.332172  0.332
1980 Swarts CA, Miller DL, Franceschetti DR, Hjalmarson HP, Vogl P, Dow JD, Wolford DJ, Streetman BG. Application of extended Hckel theory to GaAs, GaP, GaAs: N, and GaP: N Physical Review B. 21: 1708-1712. DOI: 10.1103/Physrevb.21.1708  0.477
1980 Allen RE, Hjalmarson HP, Büttner H, Vogl P, Wolford DJ, Sankey OF, Dow JD. Theory of core exciton binding energies for excitons near interfaces International Journal of Quantum Chemistry. 18: 607-615. DOI: 10.1002/Qua.560180861  0.324
1979 Wolford DJ, Hsu WY, Dow JD, Streetman BG. Nitrogen trap in the semiconductor alloys GaAs1-χxPχx and AlχxGa1-χxAs Journal of Luminescence. 18: 863-867. DOI: 10.1016/0022-2313(79)90252-7  0.315
1977 Hsu WY, Dow JD, Wolford DJ, Streetman BG. Nitrogen isoelectronic trap in GaAs1-xPx: II. Model calculation of the electronic states NΓ and NX at low temperature Physical Review B. 16: 1597-1615. DOI: 10.1103/Physrevb.16.1597  0.41
1977 Wolford DJ, Anderson RE, Streetman BG. Nitrogen implantation in GaAs1-xPx. I. Photoluminescence properties Journal of Applied Physics. 48: 2442-2452. DOI: 10.1063/1.324008  0.301
1976 Streetman BG, Wolford DJ, Holonyak N, Nelson RJ. IIIB-1 a new interpretation of luminescence due to the N isoelectronic trap in GaAs 1-x P x Ieee Transactions On Electron Devices. 23: 1254-1254. DOI: 10.1109/T-Ed.1976.18613  0.32
1976 Wolford DJ, Streetman BG, Hsu WY, Dow JD, Nelson RJ, Holonyak N. Evidence for radiative recombination in GaAs1-x Px:N (0.28x0.45) involving an isolated nitrogen impurity state associated with the 1 minimum Physical Review Letters. 36: 1400-1403. DOI: 10.1103/Physrevlett.36.1400  0.474
1976 Wolford DJ, Streetman BG, Nelson RJ, Holonyak N. Stimulated emission on Nx("A-line") recombination transitions in nitrogen-implanted GaAs1-xPx(x≈0.37) Applied Physics Letters. 28: 711-713. DOI: 10.1063/1.88646  0.375
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