| Year |
Citation |
Score |
| 2006 |
Wang PI, Juneja JS, Murarka SP, Lu TM, Jezewski C, Ghoshal R, Bakhru H. Stability of Cu on epoxy siloxane polymer under bias temperature stress Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2172569 |
0.42 |
|
| 2004 |
Wang PI, Juneja JS, Murarka S, Lu TM, Ghoshal R. Novel epoxy siloxane polymer as low-k dielectric Materials Research Society Symposium Proceedings. 812: 31-36. DOI: 10.1557/Proc-812-F4.4 |
0.336 |
|
| 2004 |
Mallikarjunan A, Murarka SP, Lu TM. Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep Journal of Applied Physics. 95: 1216-1221. DOI: 10.1063/1.1636256 |
0.346 |
|
| 2002 |
Mallikarjunan A, Juneja J, Yang G, Murarka SP, Lu T. The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films Mrs Proceedings. 734. DOI: 10.1557/Proc-734-B9.60 |
0.387 |
|
| 2002 |
Mallikarjunan A, Murarka SP, Lu TM. Mobile ion detection in organosiloxane polymer using triangular voltage sweep Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1507596 |
0.428 |
|
| 2002 |
Cui H, Bhat IB, Murarka SP, Lu H, Hsia WJ, Catabay W. Copper drift in methyl-doped silicon oxide film Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1987-1993. DOI: 10.1116/1.1503779 |
0.44 |
|
| 2002 |
Lu H, Cui H, Bhat I, Murarka S, Lanford W, Hsia W, Li W. Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology Journal of Vacuum Science & Technology B. 20: 828-833. DOI: 10.1116/1.1470510 |
0.457 |
|
| 2001 |
Wang PI, Murarka SP, Kaminski DA, Bedell S, Lanford WA. Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1387239 |
0.429 |
|
| 2001 |
Wang PI, Murarka SP, Yang GR, Lu TM. Evolution of the Cu-Al Alloy/SiO2 Interfaces during Bias Temperature Stressing Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1341247 |
0.427 |
|
| 2001 |
Krishnamoorthy A, Chanda K, Murarka SP, Ramanath G, Ryan JG. Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization Applied Physics Letters. 78: 2467-2469. DOI: 10.1063/1.1365418 |
0.431 |
|
| 2001 |
Liu HD, Zhao YP, Ramanath G, Murarka SP, Wang GC. Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films Thin Solid Films. 384: 151-156. DOI: 10.1016/S0040-6090(00)01818-6 |
0.417 |
|
| 2000 |
Wang P, Murarka SP, Yang G-, Barnat E, Lu T-, Chen Y-, Li X, Rajan K. Characterization of Cu-Al alloy/SiO 2 interface microstructure Mrs Proceedings. 615. DOI: 10.1557/Proc-615-G7.5.1 |
0.437 |
|
| 2000 |
Kailasam SK, Murarka SP, Glicksman ME. Investigation of aluminum-indium alloys for interconnect applications Journal of the Electrochemical Society. 147: 4318-4323. DOI: 10.1149/1.1394062 |
0.37 |
|
| 2000 |
Cui H, Bhat IB, Murarka SP, Lu H, Li W, Hsia WJ, Catabay W. Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology Journal of the Electrochemical Society. 147: 3808-3815. DOI: 10.1149/1.1393978 |
0.432 |
|
| 2000 |
Mallikarjunan A, Murarka SP, Steinbruchel C, Kumar A, Bakhru H. Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors Journal of the Electrochemical Society. 147: 3502-3507. DOI: 10.1149/1.1393927 |
0.478 |
|
| 1999 |
Agarwal N, Huang X, Persans P, Plawsky J, Ponoth S, Zhang X, Murarka S. Optical Properties of a Polyimide for Waveguide Applications in On-Chip Interconnects Mrs Proceedings. 597. DOI: 10.1557/Proc-597-125 |
0.36 |
|
| 1999 |
Murarka SP. Directions in the chemical mechanical planarization research Materials Research Society Symposium - Proceedings. 566: 3-11. DOI: 10.1557/Proc-566-3 |
0.323 |
|
| 1999 |
Wang PI, Yang GR, Murarka SP, Lu TM. X-ray photoelectron spectroscopic studies of Cu-Al alloy/SiO2 interfaces Materials Research Society Symposium - Proceedings. 564: 347-352. DOI: 10.1557/Proc-564-347 |
0.503 |
|
| 1999 |
Neirynck JM, Gutmann RJ, Murarka SP. Copper/benzocyclobutene interconnects for sub-100 nm integrated circuit technology: elimination of high-resistivity metallic liners and high-dielectric constant polish stops Journal of the Electrochemical Society. 146: 1602-1607. DOI: 10.1149/1.1391812 |
0.454 |
|
| 1998 |
Wang PI, Murarka SP, Bedell S, Lanford WA. Homogenization of the bilayers of Cu-Al alloy and pure copper to produce Cu-0.3 at.% Al alloy films Materials Research Society Symposium - Proceedings. 514: 281-286. DOI: 10.1557/Proc-514-281 |
0.482 |
|
| 1998 |
Suwwan de Felipe T, Murarka SP, Bedell S, Lanford WA. Capacitance-voltage, current voltage, and thermal stability of copper alloyed with aluminum or magnesium Materials Research Society Symposium - Proceedings. 514: 263-268. DOI: 10.1557/Proc-514-263 |
0.433 |
|
| 1998 |
Kailasam SK, Murarka SP, Glicksman ME, Merchant SM. Investigation of the homovalent impurity in aluminum to form alloys with enhanced interconnect reliability Materials Research Society Symposium - Proceedings. 514: 113-118. DOI: 10.1557/Proc-514-113 |
0.339 |
|
| 1998 |
Murarka SP. Chemical-mechanical planarization of the polymer interlayer dielectrics Materials Research Society Symposium - Proceedings. 511: 277-290. DOI: 10.1557/Proc-511-277 |
0.343 |
|
| 1998 |
Hymes S, Kumar KS, Murarka SP, Wang W, Lanford WA. Surface cleaning of copper by thermal and plasma treatment in reducing and inert ambients Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1107-1109. DOI: 10.1116/1.590017 |
0.372 |
|
| 1998 |
Hymes S, Kumar KS, Murarka SP, Ding PJ, Wang W, Lanford WA. Thermal stability of copper suicide passivation layers in copper-based multilevel interconnects Journal of Applied Physics. 83: 4507-4512. DOI: 10.1063/1.367235 |
0.447 |
|
| 1997 |
Yang G-, Zhao Y-, Neirynck JM, Murarka SP, Gutmann RJ. Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM Mrs Proceedings. 476: 161. DOI: 10.1557/Proc-476-161 |
0.365 |
|
| 1997 |
Lee YK, Murarka SP, Auman B. Thermal curing conditions for low K-fluorinated polyimide film for use as the interlayer dielectric in ULSI Materials Research Society Symposium - Proceedings. 443: 71-77. DOI: 10.1557/Proc-443-71 |
0.408 |
|
| 1997 |
Suwwan De Felipe T, Murarka SP, Bedell S, Lanford WA. Bias-temperature stability of the Cu(Mg)/SiO2/p-Si metal-oxide-semiconductor capacitors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1987-1989. DOI: 10.1116/1.589589 |
0.474 |
|
| 1997 |
Murarka SP. Multilevel interconnections for ULSI and GSI era Materials Science and Engineering R: Reports. 19: 87-151. DOI: 10.1016/S0927-796X(97)00002-8 |
0.364 |
|
| 1997 |
Price DT, Gutmann RJ, Murarka SP. Damascene copper interconnects with polymer ILDs Thin Solid Films. 308: 523-528. DOI: 10.1016/S0040-6090(97)00479-3 |
0.406 |
|
| 1997 |
Yang GR, Zhao YP, Neirynck JM, Murarka SP, Gutmann RJ. Chemical-mechanical polishing of parylene-N films: Evaluation by X-ray photoelectron spectroscopy and atomic force microscopy Journal of Electronic Materials. 26: 935-940. DOI: 10.1007/S11664-997-0277-3 |
0.356 |
|
| 1996 |
Hymes S, Kumar KS, Murarka SP, Wang W, Lanford WA. Oxidation resistant dilute copper (boron) alloy films prepared by DC-magnetron cosputtering Materials Research Society Symposium - Proceedings. 428: 17-23. DOI: 10.1557/Proc-428-17 |
0.503 |
|
| 1996 |
Lee YK, Murarka SP. Reactive ion etching of the fluorinated polyimide film Materials Research Society Symposium - Proceedings. 427: 455-461. DOI: 10.1557/Proc-427-455 |
0.327 |
|
| 1996 |
Kumar KS, Murarka SP. Chemical-mechanical polishing of copper in glycerol based slurries Materials Research Society Symposium - Proceedings. 427: 237-242. DOI: 10.1557/Proc-427-237 |
0.382 |
|
| 1996 |
Wang W, Ding PJ, Hymes S, Murarka SP, Lanford WA. Passivation of copper by low temperature annealing of Cu/Mg/SiO2 bilayers Chemical Engineering Communications. 152: 253-259. DOI: 10.1080/00986449608936566 |
0.498 |
|
| 1996 |
Wang W, Lanford WA, Murarka SP. Completely passivated high conductivity copper films made by annealing Cu/Al bilayers Applied Physics Letters. 68: 1622-1624. DOI: 10.1063/1.115671 |
0.513 |
|
| 1996 |
Neirynck JM, Yang GR, Murarka SP, Gutmann RJ. The addition of surfactant to slurry for polymer CMP: Effects on polymer surface, removal rate and underlying Cu Thin Solid Films. 290: 447-452. DOI: 10.1016/S0040-6090(96)09033-5 |
0.398 |
|
| 1996 |
Sainio CA, Duquette DJ, Steigerwald J, Murarka SP. Electrochemical effects in the chemical-mechanical polishing of copper for integrated circuits Journal of Electronic Materials. 25: 1593-1598. DOI: 10.1007/Bf02655581 |
0.406 |
|
| 1995 |
Wang W, Lanford WA, Murarka SP. Surface passivation of Cu by annealing Cu/Al multilayer films Materials Research Society Symposium - Proceedings. 391: 321-326. DOI: 10.1557/Proc-391-321 |
0.463 |
|
| 1995 |
Lee YK, Murarka SP, Jeng SP, Auman B. Investigations of the low dielectric constant fluorinated polyimide for use as the interlayer dielectric in ULSI Materials Research Society Symposium - Proceedings. 381: 31-43. DOI: 10.1557/Proc-381-31 |
0.417 |
|
| 1995 |
Neirynck JM, Murarka SP, Gutmann RJ. Investigations of the chemical-mechanical polishing of polymer films for ILD applications Materials Research Society Symposium - Proceedings. 381: 229-235. DOI: 10.1557/Proc-381-229 |
0.383 |
|
| 1995 |
Gutmann RJ, Chow TP, Duquette DJ, Lu T, Mcdonald JF, Murarka SP. Low Dielectric Constant Polymers For On-Chip Interlevel Dielectrics With Copper Metallization Mrs Proceedings. 381: 177. DOI: 10.1557/Proc-381-177 |
0.39 |
|
| 1995 |
Steigerwald JM, Duquette DJ, Murarka SP, Gutmann RJ. Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films Journal of the Electrochemical Society. 142: 2379-2385. DOI: 10.1149/1.2044305 |
0.409 |
|
| 1995 |
Steigerwald JM, Murarka SP, Ho J, Gutmann RJ, Duquette DJ. Mechanisms of copper removal during chemical mechanical polishing Journal of Vacuum Science & Technology B. 13: 2215-2218. DOI: 10.1116/1.588106 |
0.442 |
|
| 1995 |
Murarka SP, Hymes SW. Copper Metallization for ULSI and Beyond Critical Reviews in Solid State and Materials Sciences. 20: 87-124. DOI: 10.1080/10408439508243732 |
0.433 |
|
| 1995 |
Murarka SP. Silicide thin films and their applications in microelectronics Intermetallics. 3: 173-186. DOI: 10.1016/0966-9795(95)98929-3 |
0.386 |
|
| 1995 |
Steigerwald JM, Murarka SP, Gutmann RJ, Duquette DJ. Chemical processes in the chemical mechanical polishing of copper Materials Chemistry &Amp; Physics. 41: 217-228. DOI: 10.1016/0254-0584(95)01516-7 |
0.436 |
|
| 1995 |
Lanford WA, Ding PJ, Wang W, Hymes S, Murarka SP. Alloying of copper for use in microelectronic metallization Materials Chemistry &Amp; Physics. 41: 192-198. DOI: 10.1016/0254-0584(95)01513-2 |
0.388 |
|
| 1995 |
Zheng B, Goldberg C, Eisenbraun ET, Liu J, Kaloyeros AE, Toscano PJ, Murarka SP, Loan JF, Sullivan J. In situ quadrupole mass spectroscopy studies of water and solvent coordination to copper(II) β-diketonate precursors: implications for the chemical vapor deposition of copper Materials Chemistry &Amp; Physics. 41: 173-181. DOI: 10.1016/0254-0584(95)01511-6 |
0.361 |
|
| 1995 |
Li W, Shin DW, Tomozawa M, Murarka SP. The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 films Thin Solid Films. 270: 601-606. DOI: 10.1016/0040-6090(96)80082-4 |
0.368 |
|
| 1995 |
Gutmann RJ, Chow TP, Lakshminarayanan S, Price DT, Steigerwald JM, You L, Murarka SP. Integration of copper multilevel interconnects with oxide and polymer interlevel dielectrics Thin Solid Films. 270: 472-479. DOI: 10.1016/0040-6090(96)80080-0 |
0.416 |
|
| 1995 |
Gutmann RJ, Steigerwald JM, You L, Price DT, Neirynck J, Duquette DJ, Murarka SP. Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics Thin Solid Films. 270: 596-600. DOI: 10.1016/0040-6090(95)06717-5 |
0.424 |
|
| 1994 |
Gutmann RJ, Chow TP, Gill WN, Kaloyeros AE, Lanford WA, Murarka SP. Copper Metallization Manufacturing Issues for Future ICs Mrs Proceedings. 337. DOI: 10.1557/Proc-337-41 |
0.31 |
|
| 1994 |
Murarka SP, Ko S, Ding P, Lanford WA. The Stability of TiH 2 Used as Diffusion Barrier on SiO 2 Substrates Mrs Proceedings. 337: 217. DOI: 10.1557/Proc-337-217 |
0.437 |
|
| 1994 |
Hymes S, Murarka SP, Ding PJ, Wang W, Lanford WA. Growth kinetics and materials properties of Cu5Si Materials Research Society Symposium - Proceedings. 337: 189-194. DOI: 10.1557/Proc-337-189 |
0.387 |
|
| 1994 |
Lanford WA, Ding PJ, Hymes S, Murarka SP. Surface and interface modification of copper for electronic application Materials Research Society Symposium - Proceedings. 337: 169-176. DOI: 10.1557/Proc-337-169 |
0.437 |
|
| 1994 |
Yang K, Gutmann RJ, Murarka SP, Stonebraker E, Atkins H. Chemical-mechanical polishing of tungsten with hologen-based slurries Materials Research Society Symposium - Proceedings. 337: 145-149. DOI: 10.1557/Proc-337-145 |
0.387 |
|
| 1994 |
Steigerwald JM, Murarka SP, Duquette DJ, Gutmann RJ. Surface layer formation during the chemical mechanical polishing of copper thin films Materials Research Society Symposium - Proceedings. 337: 133-138. DOI: 10.1557/Proc-337-133 |
0.432 |
|
| 1994 |
Murarka SP. Applications of CoSi2 to VLSI and ULSI Materials Research Society Symposium Proceedings. 320: 3-13. DOI: 10.1557/Proc-320-3 |
0.405 |
|
| 1994 |
Steiaerwald JM, Murarka SP, Duauette DJ, Gutmann RJ. Effect of Copper Ions in the Slurry on the Chemical-Mechanical Polish Rate of Titanium Journal of the Electrochemical Society. 141: 3512-3516. DOI: 10.1149/1.2059362 |
0.422 |
|
| 1994 |
Steigerwald JM, Zirpali R, Price D, Gutmann RJ, Murarka SP. Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures Journal of the Electrochemical Society. 141: 2842-2848. DOI: 10.1149/1.2059241 |
0.374 |
|
| 1994 |
Lakshminarayanan S, Steigerwald J, Price DT, Bourgeois M, Chow TP, Gutmann RJ, Murarka SP. Contact and Via Structures with Copper Interconnects Fabricated using Dual Damascene Technology Ieee Electron Device Letters. 15: 307-309. DOI: 10.1109/55.296225 |
0.436 |
|
| 1994 |
Arcot B, Murarka SP, Clevenger LA, Hong QZ, Ziegler W, Harper JME. Intermetallic formation in copper/magnesium thin films - Kinetics, nucleation and growth, and effect of interfacial oxygen Journal of Applied Physics. 76: 5161-5170. DOI: 10.1063/1.357231 |
0.388 |
|
| 1994 |
Ding PJ, Lanford WA, Hymes S, Murarka SP. Effects of the addition of small amounts of Al to copper: Corrosion, resistivity, adhesion, morphology, and diffusion Journal of Applied Physics. 75: 3627-3631. DOI: 10.1063/1.356075 |
0.493 |
|
| 1994 |
Ding PJ, Wang W, Lanford WA, Hymes S, Murarka SP. Thermal annealing of buried Al barrier layers to passivate the surface of copper films Applied Physics Letters. 65: 1778-1780. DOI: 10.1063/1.112866 |
0.526 |
|
| 1994 |
Ding PJ, Wang W, Lanford WA, Hymes S, Murarka SP. Investigation of the mechanism responsible for the corrosion resistance of B implanted copper Nuclear Inst. and Methods in Physics Research, B. 85: 260-263. DOI: 10.1016/0168-583X(94)95823-8 |
0.374 |
|
| 1994 |
Ding PJ, Talevi R, Lanford WA, Hymes S, Murarka SP. Use of a rastered microbeam to study lateral diffusion of interest to microelectronics Nuclear Inst. and Methods in Physics Research, B. 85: 167-170. DOI: 10.1016/0168-583X(94)95807-6 |
0.351 |
|
| 1993 |
Berti AC, Murarka SP, Brooke LE. The Surface Morphology of Titanium Nitride / Copper Bilayers Annealed at High Temperatures Mrs Proceedings. 318. DOI: 10.1557/Proc-318-451 |
0.402 |
|
| 1993 |
Kirchner E, Murarka SP, Eisenbraun E, Kaloyeros A. Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO 2 Interface Mrs Proceedings. 318: 319. DOI: 10.1557/Proc-318-319 |
0.333 |
|
| 1993 |
Shepard CL, Lanford WA, Pant AK, Murarka SP. Stability of Silicide Films Under Post-Annealing: a Dopant Effect Mrs Proceedings. 309: 467. DOI: 10.1557/Proc-309-467 |
0.423 |
|
| 1993 |
Ding PJ, Zheng B, Eisenbraun ET, Lanford WA, Kaloyeros AE, Hymes S, Murarka SP. Observation of reduced oxidation rates for plasma-assisted CVD copper films Materials Research Society Symposium Proceedings. 309: 455-460. DOI: 10.1557/Proc-309-455 |
0.462 |
|
| 1993 |
Ding PJ, Lanford WA, Hymes S, Murarka SP. Annealing of boron-implanted corrosion resistant copper films Journal of Applied Physics. 74: 1331-1334. DOI: 10.1063/1.354913 |
0.317 |
|
| 1993 |
Farooq MS, Murarka SP. Schottky device behavior of n-Si/Pd2Si/Al and n-Si/CoSi2/Al contacts with and without a Ta2N diffusion barrier Materials Science and Engineering B. 19: 270-275. DOI: 10.1016/0921-5107(93)90197-U |
0.325 |
|
| 1993 |
Murarka SP, Gutmann RJ, Kaloyeros AE, Lanford WA. Advanced multilayer metallization schemes with copper as interconnection metal Thin Solid Films. 236: 257-266. DOI: 10.1016/0040-6090(93)90680-N |
0.365 |
|
| 1992 |
Ding PJ, Lanford WA, Hymes S, Murarka SP. Ion Jimplantation to Inhibit Corrosion of Copper Mrs Proceedings. 265: 757. DOI: 10.1557/Proc-265-199 |
0.303 |
|
| 1992 |
Arcof B, Clevenger LA, Murarka SP, Harper JME, Cabrai C. Kinetics of Intermetallic Formation in Free Standing Cu/Mg Multilayer Thin Films Mrs Proceedings. 260. DOI: 10.1557/Proc-260-947 |
0.436 |
|
| 1992 |
Nandan R, Murarka SP, Pant A, Shepard C, Lanford WA. Stability of Sputter Deposited Al-Cu Bilayers on SiO 2 . Mrs Proceedings. 260: 929. DOI: 10.1557/Proc-260-929 |
0.409 |
|
| 1992 |
Ko S, Devashrajee NM, Murarka SP, Ding P, Lanford WA. Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing Mrs Proceedings. 260: 665. DOI: 10.1557/Proc-260-665 |
0.386 |
|
| 1992 |
Shy YT, Murarka SP, Sitaram AR, Ding P-, Lanford WA. Interactions and Stability of Cu on CoSi 2 Mrs Proceedings. 260. DOI: 10.1557/Proc-260-151 |
0.444 |
|
| 1992 |
Pant AK, Murarka SP, Shepard C, Lanford W. Kinetics of platinum silicide formation during rapid thermal processing Journal of Applied Physics. 72: 1833-1836. DOI: 10.1063/1.351654 |
0.326 |
|
| 1992 |
Hymes S, Murarka SP, Shepard C, Lanford WA. Passivation of copper by silicide formation in dilute silane Journal of Applied Physics. 71: 4623-4625. DOI: 10.1063/1.350765 |
0.476 |
|
| 1991 |
Kaloyeros AE, Dettelbacher C, Eisenbraun ET, Lanford WA, Li H, Olowolafe JF, Murarka S, Pintchovski F, Shy YT, Toscano PJ. The Effect of Grain Boundaries and Substrate Interactions with Hydrogen on the CVD Growth of Device-Quality Copper. Mrs Proceedings. 229. DOI: 10.1557/Proc-229-123 |
0.445 |
|
| 1991 |
Arcot B, Cabral C, Harper JME, Murarka SP. Intermetallic Reactions Between Copper and Magnesium as an Adhesion / Barrier Layer Mrs Proceedings. 225. DOI: 10.1557/Proc-225-231 |
0.473 |
|
| 1991 |
Murarka SP. Technology Trends in Physical and Chemical Vapor Deposition Techniques Iete Journal of Research. 37: 180-187. DOI: 10.1080/03772063.1991.11436953 |
0.338 |
|
| 1991 |
Murarka SP. An Overview of High Melting Point Metallization Iete Journal of Research. 37: 171-180. DOI: 10.1080/03772063.1991.11436952 |
0.337 |
|
| 1990 |
Arcot B, Shy YT, Murarka SP, Shepard C, Lanford WA. Interactions of Copper with Interlayer Dielectrics and Adhesion Promoters / Diffusion Barriers. Mrs Proceedings. 203: 27. DOI: 10.1557/Proc-203-27 |
0.467 |
|
| 1990 |
Sitaram AR, Kalb JC, Murarka SP. In Situ Study of Stresses Generated During the Formation of Cobalt Disilicide and the Effect of Post Silicide Processing Mrs Proceedings. 188. DOI: 10.1557/Proc-188-67 |
0.379 |
|
| 1990 |
Shy Y, Murarka SP, Shepard CL, Lanford WA. Interaction of Copper Film with Silicides Mrs Proceedings. 181: 537. DOI: 10.1557/Proc-181-537 |
0.47 |
|
| 1990 |
Bhushan B, Murarka SP. Instabilities in the Mechanical Stress in Deposited SiO 2 Films Caused by Thermal Treatments Mrs Proceedings. 181: 463. DOI: 10.1557/Proc-181-463 |
0.39 |
|
| 1990 |
Shepard CL, Lanford WA, Shy Y, Murarka S. Interaction of Cu and CoSi 2 Mrs Proceedings. 181: 105. DOI: 10.1557/Proc-181-105 |
0.426 |
|
| 1990 |
Nguyen AM, Murarka SP. Properties of chemical vapor deposited tetraethylorthosilicate oxides: Correlation with deposition parameters, annealing, and hydrogen concentration Journal of Vacuum Science & Technology B. 8: 533-539. DOI: 10.1116/1.585015 |
0.444 |
|
| 1990 |
Bhushan B, Murarka SP, Gerlach J. Stress in silicon dioxide films deposited using chemical vapor deposition techniques and the effect of annealing on these stresses Journal of Vacuum Science & Technology B. 8: 1068-1074. DOI: 10.1116/1.584918 |
0.392 |
|
| 1989 |
Xie JZ, Murarka SP, Guo XS, Lanford WA. Stability of hydrogen in silicon nitride films deposited by low‐pressure and plasma enhanced chemical vapor deposition techniques Journal of Vacuum Science & Technology B. 7: 150-152. DOI: 10.1116/1.584707 |
0.42 |
|
| 1989 |
Xie JZ, Kauget H, Murarka SP. Rapid thermal processing of silicon dioxide films in metal–oxide semiconductor capacitors: High‐temperature SiO2 decomposition at the SiO2–Si interfaces in inert ambient Journal of Vacuum Science & Technology B. 7: 141-144. DOI: 10.1116/1.584705 |
0.421 |
|
| 1988 |
Xie JZ, Murarka SP, Guo XS, Lanford WA. An investigation of hydrogen concentration profiles in as‐deposited and annealed chemical vapor deposited SiO2 films Journal of Vacuum Science & Technology B. 6: 1756-1762. DOI: 10.1116/1.584173 |
0.407 |
|
| 1988 |
Xie JZ, Murarka SP, Guo XS, Lanford WA. Hydrogen concentration profiles in as-deposited and annealed phosphorus-doped silicon dioxide films Applied Physics Letters. 53: 2036-2038. DOI: 10.1063/1.100495 |
0.397 |
|
| 1986 |
Murarka SP. Codeposited silicides in very-large-scale integration Thin Solid Films. 140: 35-50. DOI: 10.1016/0040-6090(86)90157-4 |
0.429 |
|
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