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William J. McMahon, Ph.D. - Publications

Affiliations: 
2002 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Condensed Matter Physics
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 McMahon W, Haggag A, Hess K. Reliability scaling issues for nanoscale devices Ieee Transactions On Nanotechnology. 2: 33-38. DOI: 10.1109/Tnano.2003.808515  0.703
2003 Penzin O, Haggag A, McMahon W, Lyumkis E, Hess K. MOSFET degradation kinetics and its simulation Ieee Transactions On Electron Devices. 50: 1445-1450. DOI: 10.1109/Ted.2003.813333  0.665
2002 McMahon W, Hess K. A Multi-Carrier Model for Interface Trap Generation Journal of Computational Electronics. 1: 395-398. DOI: 10.1023/A:1020716111756  0.529
2002 McMahon W, Haggag A, Hess K. A new paradigm for examining MOSFET failure modes Physica B-Condensed Matter. 314: 358-362. DOI: 10.1016/S0921-4526(01)01424-7  0.686
2001 Haggag A, McMahon W, Hess K, Fischer B, Register LF. Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability Vlsi Design. 13: 111-115. DOI: 10.1155/2001/90787  0.693
2001 Hess K, Haggag A, McMahon W, Cheng K, Lee J, Lyding J. The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38. DOI: 10.1109/101.933789  0.681
2000 Tuttle BR, McMahon W, Hess K. Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors Superlattices and Microstructures. 27: 229-233. DOI: 10.1006/Spmi.1999.0804  0.565
1999 Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4  0.596
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